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VUO86-12NO7
Bridge Rectifier, Three Phase, 1.2 kV, 90 A, ECO-PAC1, 5 Pins, 1.48 V
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- Manufacturer: IXYS SEMICONDUCTOR
- Product type: Bridge Rectifier Diodes
- No. of Phases:Three Phase; Repetitive Reverse Voltage Vrrm Max:1.2kV; Forward Current If(AV):90A; Bridge Rectifier Case Style:ECO-PAC1; Forward Voltage VF Max:1.48V; No. of Pins:5
- SVHC: No SVHC (12-Jan-2017)
- No. of Pins: 5Pins
- No. of Phases: Three Phase
- Product Range: VUO86
- Forward Voltage Max: 1.48V
- Forward Surge Current: 550A
- Average Forward Current: 90A
- Bridge Rectifier Mounting: Panel Mount
- Operating Temperature Max: 150°C
- Bridge Rectifier Case Style: ECO-PAC1
- Repetitive Peak Reverse Voltage: 1.2kV
| Delivery and price | |
|---|---|
| Units per pack | 100 |
| Price | 10.31 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
**VUO86-12NO7** ## **Standard Rectifier Module** **3~ Rectifier** VRRM = 1200 V I DAV = 90 A ~~=~~ I FSM = 550 A ## 3~ Rectifier Bridge ## **Part number** VUO86-12NO7 K N H A D ## **Features / Advantages:** - Package with DCB ceramic - Improved temperature and power cycling - Planar passivated chips - Very low forward voltage drop - Very low leakage current ## **Applications:** - Diode for main rectification - For three phase bridge configurations - Supplies for DC power equipment - Input rectifiers for PWM inverter - Battery DC power supplies - Field supply for DC motors ## ECO-PAC1 ## **Package:** - Industry standard outline - RoHS compliant - Soldering pins for PCB mounting - Height: 9 mm - Base plate: DCB ceramic - Reduced weight - Advanced power cycling IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20130321a © 2013 IXYS all rights reserved **VUO86-12NO7** |Ratings<br>**Rectifier**|Ratings<br>**Rectifier**|Ratings<br>**Rectifier**|Ratings<br>**Rectifier**|Ratings<br>**Rectifier**|Ratings<br>**Rectifier**| |---|---|---|---|---|---| |Symbol<br>Definition<br>Conditions||min.|typ.|max.|Unit| |VRSM<br>_max. non-repetitive reverse blocking voltage_<br>T = 25°C<br>VJ||||1300|V| |VRRM<br>_max. repetitive reverse blocking voltage_<br>T = 25°C<br>VJ||||1200|V| |IR<br>_reverse current_|V = V<br>R<br>T = 25°C<br>VJ<br>T = °C<br>VJ<br>V = V<br>R<br>1200<br>150<br>1200|||40<br>1.5|mA<br>µA| |V F<br>_forward voltage drop_|T = 25°C<br>VJ<br>I = A<br>F<br>30<br>I = A<br>F<br>90|||1.14<br>1.48|V<br>V| ||T = °C<br>VJ<br>I = A<br>F<br>30<br>I = A<br>F<br>90<br>125|||1.06<br>1.51|V<br>V| |I<br>DAV<br>_bridge output current_|T = °C<br>C<br>105<br>T = °C<br>VJ<br>150<br>d =<br>rectangular<br>⅓|||90|A| |VF0<br>T = °C<br>VJ<br>150<br>r F<br>_threshold voltage_<br>_slope resistance_<br>_for power loss calculation only_||||0.81<br>7.8|V<br>mΩ| |R<br>_thermal resistance junction to case_<br>thJC||||0.9|K/W| |R<br>_thermal resistance case to heatsink_<br>thCH|||0.4||K/W| |Ptot<br>_total power dissipation_|T = 25°C<br>C|||135|W| |IFSM<br>_max. forward surge current_|t = 10 ms; (50 Hz), sine<br>T = 45°C<br>VJ<br>V = 0 V<br>R<br>t = 8,3 ms; (60 Hz), sine|||550<br>595|A<br>A| ||T = °C<br>VJ<br>150<br>V = 0 V<br>R<br>t = 10 ms; (50 Hz), sine<br>t = 8,3 ms; (60 Hz), sine|||470<br>505|A<br>A| |I²t<br>_value for fusing_|T = 45°C<br>V = 0 V<br>t = 10 ms; (50 Hz), sine<br>t = 8,3 ms; (60 Hz), sine<br>VJ<br>R|||1.52<br>1.48|kA²s<br>kA²s| ||T = °C<br>150<br>V = 0 V<br>t = 10 ms; (50 Hz), sine<br>t = 8,3 ms; (60 Hz), sine<br>VJ<br>R|||1.11<br>1.06|kA²s<br>kA²s| |CJ<br>_junction capacitance_|V = V;<br>400<br>T = 25°C<br>f = 1 MHz<br>R<br>VJ||18||pF| **==> picture [308 x 253] intentionally omitted <==** IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20130321a © 2013 IXYS all rights reserved **VUO86-12NO7** |Ratings<br>**Package**<br>**ECO-PAC1**|Ratings<br>**Package**<br>**ECO-PAC1**|Ratings<br>**Package**<br>**ECO-PAC1**|Ratings<br>**Package**<br>**ECO-PAC1**|Ratings<br>**Package**<br>**ECO-PAC1**| |---|---|---|---|---| |Symbol<br>Definition<br>Conditions|min.|typ.|max.|Unit| |I RMS<br>_RMS current_<br>per terminal|||100|A| |Tstg<br>_storage temperature_|-40||125|°C| |TVJ<br>_virtual junction temperature_|-40||150|°C| |Weight||19||g| |M D<br>_mounting torque_|1.5||2|Nm| |d Spp/App<br>_creepage distance on surface | striking distance through air_<br>d Spb/Apb<br>_terminal to backside_<br>_terminal to terminal_|6.0|||mm<br>mm| ||10.0|||| |V<br>t = 1 second<br>t = 1 minute<br>_isolation voltage_<br>50/60 Hz, RMS; I ≤ 1 mA<br>ISOL<br>ISOL|3000|||V<br>V| ||2500|||| **==> picture [192 x 142] intentionally omitted <==** **----- Start of picture text -----**<br> Logo<br>Made in GermanyYYCW Lot# Circuit Diagram<br>XXX XX-XXXXX<br>Part Number Date Code<br>**----- End of picture text -----**<br> **==> picture [216 x 78] intentionally omitted <==** |Ordering|Part Number|Markingon Product|DeliveryMode|Quantity|Code No.| |---|---|---|---|---|---| |Standard|VUO86-12NO7|VUO86-12NO7|Box|25|479594| |**Equivalent Circuits for Simulation**<br>T =<br>VJ<br>150 °C<br>_* on die level_|**Equivalent Circuits for Simulation**<br>T =<br>VJ<br>150 °C<br>_* on die level_| |---|---| |I|V0<br>~~R~~0| IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20130321a © 2013 IXYS all rights reserved **VUO86-12NO7** ## **Outlines ECO-PAC1** **==> picture [509 x 483] intentionally omitted <==** **==> picture [483 x 168] intentionally omitted <==** **----- Start of picture text -----**<br> K N H A D<br>**----- End of picture text -----**<br> IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20130321a © 2013 IXYS all rights reserved **VUO86-12NO7** ## **Rectifier** **==> picture [491 x 414] intentionally omitted <==** **----- Start of picture text -----**<br> 100 500 3000<br>50 Hz0.8 x V RRM VR = 0 V<br>80<br>400 1000 TVJ = 45°C<br>IF 60 IFSM TVJ = 45°C I [2] t<br>T VJ = 150°C<br>[A] 40 [A]<br>300 [A [2] s]<br>20 TVJ = 125°C150°C TVJ = 150°C<br>TVJ = 25°C<br>0 200 100<br>0.4 0.8 1.2 1.6 10 [-3] 10 [-2] 10 [-1] 10 [0] 1 10<br>VF [V] t [s] t [ms]<br>Fig. 1 Forward current versus Fig. 2 Surge overload current Fig. 3 I [2] t versus time per diode<br>voltage drop per diode<br>50<br>RthJA: DC =<br>100<br>DC = 0.6 KW 1<br>40 1 0.8 KW 0.5<br>0.5 1 KW 80 0.4<br>0.4 2 KW<br>30 0.33 4 KW IF(AV)M 0.33<br>Ptot 0.17 8 KW 60 0.17<br>0.08 [A] 0.08<br>[W] 20<br>40<br>10 20<br>0 0<br>0 10 20 30 40 0 25 50 75 100 125 150 0 25 50 75 100 125 150<br>IdAVM [A] TA [°C] TC [°C]<br>**----- End of picture text -----**<br> **==> picture [279 x 9] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 4 Power dissipation vs. direct output current & ambient temperature<br>**----- End of picture text -----**<br> Fig. 5 Max. forward current vs. case temperature **==> picture [467 x 178] intentionally omitted <==** **----- Start of picture text -----**<br> 1.0<br>0.8 Constants for ZthJC calculation:<br>0.6 i Rth (K/W) ti (s)<br>1 0.0607 0.000<br>ZthJC<br>2 0.1230 0.00256<br>0.4<br>[K/W] 3 0.2330 0.0045<br>4 0.3230 0.0242<br>0.2<br>5 0.1628 0.18<br>0.0<br>1 10 100 1000 10000<br>t [ms]<br>**----- End of picture text -----**<br> Fig. 6 Transient thermal impedance junction to case IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20130321a © 2013 IXYS all rights reserved
Updated at June 4, 2026
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