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VUO82-16NO7
Bridge Rectifier, Three Phase, 1.6 kV, 90 A, PWS-D, 5 Pins, 1.35 V
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- Manufacturer: IXYS SEMICONDUCTOR
- Product type: Bridge Rectifier Diodes
- No. of Phases:Three Phase; Repetitive Reverse Voltage Vrrm Max:1.6kV; Forward Current If(AV):90A; Bridge Rectifier Case Style:PWS-D; Forward Voltage VF Max:1.35V; No. of Pins:5Pins;
- SVHC: No SVHC (12-Jan-2017)
- No. of Pins: 5Pins
- No. of Phases: Three Phase
- Product Range: VUO82
- Forward Voltage Max: 1.35V
- Forward Surge Current: 750A
- Average Forward Current: 90A
- Bridge Rectifier Mounting: Panel Mount
- Operating Temperature Max: 150°C
- Bridge Rectifier Case Style: PWS-D
- Repetitive Peak Reverse Voltage: 1.6kV
| Delivery and price | |
|---|---|
| Units per pack | 50 |
| Price | 29.68 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## **VUO82-16NO7** ## **Standard Rectifier Module** ||**3~**|| |---|---|---| ||**Rectifier**|| |RRM<br>1600<br>V<br>=||V| |I|90<br>DAV<br>=|A| |I|FSM<br>750<br>=|A| ## 3~ Rectifier Bridge ## **Part number** VUO82-16NO7 **==> picture [111 x 7] intentionally omitted <==** **----- Start of picture text -----**<br> - ~ ~ ~ +<br>**----- End of picture text -----**<br> ## **Features / Advantages:** - Package with DCB ceramic - Improved temperature and power cycling - Planar passivated chips - Very low forward voltage drop - Very low leakage current ## **Applications:** - Diode for main rectification - For three phase bridge configurations - Supplies for DC power equipment - Input rectifiers for PWM inverter - Battery DC power supplies - Field supply for DC motors ## PWS-D ## **Package:** - Industry standard outline - RoHS compliant - Easy to mount with two screws - Base plate: Copper internally DCB isolated - Advanced power cycling IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20130410a © 2013 IXYS all rights reserved **VUO82-16NO7** |Ratings<br>**Rectifier**|Ratings<br>**Rectifier**|Ratings<br>**Rectifier**|Ratings<br>**Rectifier**|Ratings<br>**Rectifier**|Ratings<br>**Rectifier**| |---|---|---|---|---|---| |Symbol<br>Definition<br>Conditions||min.|typ.|max.|Unit| |VRSM<br>_max. non-repetitive reverse blocking voltage_<br>T = 25°C<br>VJ||||1700|V| |VRRM<br>_max. repetitive reverse blocking voltage_<br>T = 25°C<br>VJ||||1600|V| |IR<br>_reverse current_|V = V<br>R<br>T = 25°C<br>VJ<br>T = °C<br>VJ<br>V = V<br>R<br>1600<br>150<br>1600|||100<br>1.5|mA<br>µA| |V F<br>_forward voltage drop_|T = 25°C<br>VJ<br>I = A<br>F<br>30<br>I = A<br>F<br>90|||1.08<br>1.35|V<br>V| ||T = °C<br>VJ<br>I = A<br>F<br>30<br>I = A<br>F<br>90<br>125|||0.99<br>1.33|V<br>V| |I<br>DAV<br>_bridge output current_|T = °C<br>C<br>115<br>T = °C<br>VJ<br>150<br>d =<br>rectangular<br>⅓|||90|A| |VF0<br>T = °C<br>VJ<br>150<br>r F<br>_threshold voltage_<br>_slope resistance_<br>_for power loss calculation only_||||0.78<br>6|V<br>mΩ| |R<br>_thermal resistance junction to case_<br>thJC||||0.9|K/W| |R<br>_thermal resistance case to heatsink_<br>thCH|||0.4||K/W| |Ptot<br>_total power dissipation_|T = 25°C<br>C|||135|W| |IFSM<br>_max. forward surge current_|t = 10 ms; (50 Hz), sine<br>T = 45°C<br>VJ<br>V = 0 V<br>R<br>t = 8,3 ms; (60 Hz), sine|||750<br>810|A<br>A| ||T = °C<br>VJ<br>150<br>V = 0 V<br>R<br>t = 10 ms; (50 Hz), sine<br>t = 8,3 ms; (60 Hz), sine|||640<br>690|A<br>A| |I²t<br>_value for fusing_|T = 45°C<br>V = 0 V<br>t = 10 ms; (50 Hz), sine<br>t = 8,3 ms; (60 Hz), sine<br>VJ<br>R|||2.82<br>2.73|kA²s<br>kA²s| ||T = °C<br>150<br>V = 0 V<br>t = 10 ms; (50 Hz), sine<br>t = 8,3 ms; (60 Hz), sine<br>VJ<br>R|||2.05<br>1.98|kA²s<br>kA²s| |CJ<br>_junction capacitance_|V = V;<br>400<br>T = 25°C<br>f = 1 MHz<br>R<br>VJ||27||pF| **==> picture [308 x 253] intentionally omitted <==** IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20130410a © 2013 IXYS all rights reserved **VUO82-16NO7** ~~ee~~ |Symbol<br>Definition<br>Conditions|min.|typ.|max.|Unit| |---|---|---|---|---| |I RMS<br>_RMS current_<br>per terminal|~~7~~|~~7~~|150|A| |Tstg<br>_storage temperature_|-40<br>~~7~~|~~7~~|125|°C| |TVJ<br>_virtual junction temperature_|-40||150|°C| |Weight||159||g| |M D<br>_mounting torque_<br>M T<br>_terminal torque_|4.25<br>4.25<br>~~|~~|~~|~~|5.75<br>5.75|Nm<br>Nm| |d Spp/App<br>_creepage distance on surface | striking distance through air_<br>d Spb/Apb<br>_terminal to backside_<br>_terminal to terminal_|9.5<br>26.0<br>~~|~~<br>~~|~~|~~|~~<br>~~|~~||mm<br>mm| |V<br>t = 1 second<br>t = 1 minute<br>_isolation voltage_<br>50/60 Hz, RMS; I ≤ 1 mA<br>ISOL<br>ISOL|2500<br>3000<br>~~|~~|~~|~~||V<br>V| Circuit Made in Germany Diagram Product XXXX-XXXX[YYCW Lot#] Number ~~F~~ E Date Code Ordering Part Number Marking on Product Delivery Mode Quantity Code No. ~~ee~~ Standard VUO82-16NO7 VUO82-16NO7 Box 10 504848 ~~a~~ **Equivalent Circuits for Simulation** ~~e~~ _* on die level_ T =VJ 150 °C I V0 ~~R~~ 0 Rectifier ~~Om~~ V 0 max _threshold voltage_ 0.78 V R0 max _slope resistance *_ 4.8 mΩ IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20130410a © 2013 IXYS all rights reserved **VUO82-16NO7** **==> picture [509 x 15] intentionally omitted <==** **----- Start of picture text -----**<br> Outlines PWS-D<br>**----- End of picture text -----**<br> **==> picture [509 x 483] intentionally omitted <==** **==> picture [483 x 168] intentionally omitted <==** **----- Start of picture text -----**<br> - ~ ~ ~ +<br>**----- End of picture text -----**<br> IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20130410a © 2013 IXYS all rights reserved **VUO82-16NO7** ## **Rectifier** **==> picture [492 x 414] intentionally omitted <==** **----- Start of picture text -----**<br> 120 10000<br>50 Hz0.8 x V RRM VR = 0 V<br>600<br>100<br>80 TVJ = 45°C<br>500 I [2] t<br>[A]IF 60 IFSM TVJ = 45°C 1000 TVJ = 150°C<br>400 [A [2] s]<br>40 [A] TVJ = 150°C<br>20 T VJ =<br>125°C 300<br>150°C<br>TVJ = 25°C<br>0 100<br>0.4 0.8 1.2 1.6 0.001 0.010 0.100 1.000 1 10<br>VF [V] t [s] t [ms]<br>Fig. 1 Forward current versus Fig. 2 Surge overload current Fig. 3 I [2] t versus time per diode<br>voltage drop per diode<br>40 120<br>DC = RthJA:<br>1 0.6 KW DC =<br>0.5 0.8 KW 100 1<br>0.4<br>30 0.33 1 KW 0.5<br>0.17 2 KW 80 0.4<br>Ptot 0.08 48 KWKW IF(AV)M 0.33<br>20 60 0.17<br>[A] 0.08<br>[W]<br>40<br>10<br>20<br>0 0<br>0 10 20 30 0 25 50 75 100 125 150 175 0 25 50 75 100 125 150<br>IdAVM [A] TA [°C] TC [°C]<br>**----- End of picture text -----**<br> **==> picture [279 x 9] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 4 Power dissipation vs. direct output current & ambient temperature<br>**----- End of picture text -----**<br> Fig. 5 Max. forward current vs. case temperature **==> picture [469 x 178] intentionally omitted <==** **----- Start of picture text -----**<br> 1.0<br>0.8 Constants for ZthJC calculation:<br>ZthJC0.6 i Rth (K/W) ti (s)<br>[K/W] 1 0.05 0.001<br>2 0.14 0.030<br>0.4<br>3 0.18 0.070<br>4 0.28 0.150<br>0.2<br>5 0.25 0.950<br>0.0<br>1 10 100 1000 10000<br>t [ms]<br>**----- End of picture text -----**<br> Fig. 6 Transient thermal impedance junction to case IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20130410a © 2013 IXYS all rights reserved
Updated at June 4, 2026
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