VUO50-12NO3

## **VUO50-12NO3** 

## **Standard Rectifier Module** 

|||**3~**||
|---|---|---|---|
||**Rectifier**|||
|RRM<br>V||1200<br>=|V|
|I|DAV|60<br>=|A|
|I|FSM|500<br>=|A|



## 3~ Rectifier Bridge 

## **Part number** 

## **VUO50-12NO3** 

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## **Features / Advantages:** 

- Package with DCB ceramic 

- Improved temperature and power cycling 

- Planar passivated chips 

- Very low forward voltage drop 

- Very low leakage current 

## **Applications:** 

- Diode for main rectification 

- For three phase bridge configurations 

- Supplies for DC power equipment 

- Input rectifiers for PWM inverter 

- Battery DC power supplies 

- Field supply for DC motors 

## **Package:** FO-F 

- Isolation Voltage:          V~3600 

- Industry standard outline 

- RoHS compliant 

- ¼“ fast-on terminals 

- Easy to mount with two screws 

- Base plate: DCB ceramic 

- Reduced weight 

- Advanced power cycling 

## **Disclaimer Notice** 

Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. 

IXYS reserves the right to change limits, conditions and dimensions. 

Data according to IEC 60747and per semiconductor unless otherwise specified 

20191219c 

© 2019 IXYS all rights reserved 

**VUO50-12NO3** 

|**Ratings**<br>**Rectifier**|**Ratings**<br>**Rectifier**|**Ratings**<br>**Rectifier**|**Ratings**<br>**Rectifier**|**Ratings**<br>**Rectifier**|**Ratings**<br>**Rectifier**|
|---|---|---|---|---|---|
|**Symbol**<br>**Definition**<br>**Conditions**||**min.**|**typ.**|**max.**|**Unit**|
|**VRSM**<br>_max. non-repetitive reverse blocking voltage_<br>T    =   25°C<br>VJ||||1300|V|
|**VRRM**<br>_max. repetitive reverse blocking voltage_<br>T    =   25°C<br>VJ||||1200|V|
|**IR**<br>_reverse current_|V    =          V<br>R<br>T    =   25°C<br>VJ<br>T    =       °C<br>VJ<br>V    =          V<br>R<br>1200<br>150<br>1200|||40<br>1.5|mA<br>µA|
|**VF**<br>_forward voltage drop_|T    =   25°C<br>VJ<br>I  =          A<br>F<br>20<br>I  =          A<br>F<br>60|||1.07<br>1.32|V<br>V|
||T    =       °C<br>VJ<br>I  =          A<br>F<br>20<br>I  =          A<br>F<br>60<br>125|||0.98<br>1.30|V<br>V|
|**I**<br>**DAV**<br>_bridge output current_|T  =       °C<br>C<br>110<br>T    =       °C<br>VJ<br>150<br>d =<br>rectangular<br>⅓|||60|A|
|**VF0**<br>T    =       °C<br>VJ<br>150<br>**rF**<br>_threshold voltage_<br>_slope resistance_<br>_for power loss calculation only_||||0.78<br>8.5|V<br>mΩ|
|**R**<br>_thermal resistance junction to case_<br>**thJC**||||1.5|K/W|
|**R**<br>_thermal resistance case to heatsink_<br>**thCH**|||0.4||K/W|
|**Ptot**<br>_total power dissipation_|T    =   25°C<br>C|||80|W|
|**IFSM**<br>_max. forward surge current_|t =  10 ms; (50 Hz), sine<br>T    =   45°C<br>VJ<br>V    = 0 V<br>R<br>t = 8,3 ms; (60 Hz), sine|||500<br>540|A<br>A|
||T    =       °C<br>VJ<br>150<br>V    = 0 V<br>R<br>t =  10 ms; (50 Hz), sine<br>t = 8,3 ms; (60 Hz), sine|||425<br>460|A<br>A|
|**I²t**<br>_value for fusing_|T    =   45°C<br>V    = 0 V<br>t =  10 ms; (50 Hz), sine<br>t = 8,3 ms; (60 Hz), sine<br>VJ<br>R|||1.25<br>1.22|kA²s<br>kA²s|
||T    =       °C<br>150<br>V    = 0 V<br>t =  10 ms; (50 Hz), sine<br>t = 8,3 ms; (60 Hz), sine<br>VJ<br>R|||905<br>880|A²s<br>A²s|
|**CJ**<br>_junction capacitance_|V  =          V;<br>400<br>T    =   25°C<br>f = 1 MHz<br>R<br>VJ||25||pF|



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IXYS reserves the right to change limits, conditions and dimensions. 

Data according to IEC 60747and per semiconductor unless otherwise specified 

20191219c 

© 2019 IXYS all rights reserved 

**VUO50-12NO3** 

|**Symbol**<br>**Definition**<br>**Conditions**<br>~~**|**~~|**Symbol**<br>**Definition**<br>**Conditions**<br>~~**|**~~|**min.**<br>~~**|**~~|**typ.**|**max.**|**Unit**|
|---|---|---|---|---|---|
|**I RMS**<br>_RMS current_<br>per terminal<br>~~**|**~~||~~**|**~~||100|A|
|**TVJ**<br>_virtual junction temperature_<br>~~**|**~~||-40<br>~~**|**~~||150|°C|
|**Top**<br>_operation temperature_||-40||125|°C|
|**Tstg**<br>_storage temperature_||-40||125|°C|
|**Weight**|||45||g|
|**M D**<br>_mounting torque_||2||2.5|Nm|
|**dSpp/App**<br>_creepage distance on surface | striking distance through air_<br>**dSpb/Apb**<br>_terminal to backside_<br>_terminal to terminal_|18.0<br>26.0<br>~~|~~|6.0<br>20.0<br>~~|~~|~~|~~||mm<br>mm|
|**V**<br>t = 1 second<br>t = 1 minute<br>_isolation voltage_<br>50/60 Hz, RMS; I≤1 mA<br>ISOL<br>**ISOL**<br>~~|~~||3600<br>3000<br>~~|~~|~~|~~||V<br>V|



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Date Code/Location<br>yywwZ<br>XXXXXXXXX<br>123456<br>I LCisdzC<br>Part Number Lot# 2D Barcode<br>**----- End of picture text -----**<br>


**Ordering Ordering Number Marking on Product Delivery Mode Quantity Code No.** ~~ee~~ Standard VUO50-12NO3 VUO50-12NO3 Box 10 417246 

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 Equivalent Circuits for Simulation * on die level T    =VJ 150°C<br>I V0 R 0 Rectifier<br>~~<br>V 0 max threshold voltage 0.78 V<br>R0 max slope resistance * 7.3 mΩ<br>**----- End of picture text -----**<br>


IXYS reserves the right to change limits, conditions and dimensions. 

Data according to IEC 60747and per semiconductor unless otherwise specified 

20191219c 

© 2019 IXYS all rights reserved 

**VUO50-12NO3** 

## **Outlines FO-F** 

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6.25 6.25<br>12.5 12.5<br>6.3 x 0.8<br>48<br>1.6<br>+ +<br>~ ~ ~<br>_ _<br>5.3x6.9<br>63<br>45°<br>24.5<br>21<br>2<br>1 2 3<br>4<br>4 5 6<br>10<br>31.6 5.3<br>7 8 9<br>10<br>**----- End of picture text -----**<br>


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+<br>D1 D3 D5<br>~<br>~<br>~<br>D2 D4 D6<br>-<br>**----- End of picture text -----**<br>


IXYS reserves the right to change limits, conditions and dimensions. 

Data according to IEC 60747and per semiconductor unless otherwise specified 

20191219c 

© 2019 IXYS all rights reserved 

**VUO50-12NO3** 

## **Rectifier** 

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80 450 1400<br>50 Hz<br>0.8 x V RRM V R  = 0 V<br>400 1200<br>60<br>350 1000<br>IF IFSM TVJ = 45°C I [2] t<br>40 300 800<br>[A] [A] TVJ = 150°C [A [2] s] TVJ = 45°C<br>250 600<br>TVJ = 150°C<br>20<br>TVJ =<br>125°C 200 400<br>150°C<br>TVJ = 25°C<br>0 150 200<br>0.4 0.6 0.8 1.0 1.2 1.4 1.6 10 [-3] 10 [-2] 10 [-1] 10 [0] 1 10<br>VF [V] t [s] t [ms]<br>Fig. 1 Forward current vs. Fig. 2 Surge overload current Fig. 3 I [2] t vs. time per diode<br>voltage drop per diode vs. time per diode<br>25 80<br>DC = RthJA:<br>1 0.6 KW 70 DC =<br>20 0.5 0.8 KW 1<br>0.4 1 KW 60 0.5<br>0.33<br>2 KW 0.4<br>Ptot 15 0.170.08 4 8 KW KW IF(AV)M 5040 0.33 0.17<br>[W] 10 [A] 0.08<br>30<br>20<br>5<br>10<br>0 0<br>0 5 10 15 20 0 25 50 75 100 125 150 175 0 25 50 75 100 125 150<br>IF(AV)M [A] TA  [°C] TC [°C]<br>Fig. 4 Power dissipation vs. forward current Fig. 5 Max. forward current vs.<br>and ambient temperature per diode case temperature per diode<br>**----- End of picture text -----**<br>


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1.6<br>1.4<br>1.2<br>1.0 Constants for ZthJC calculation:<br>0.8 i Rth (K/W) ti (s)<br>ZthJC 1 0.0607 0.00040<br>0.6<br>[K/W] 2 0.1330 0.00256<br>0.4<br>3 0.4305 0.00450<br>0.2 4 0.5130 0.02420<br>0.0 5 0.3628 0.18000<br>1 10 100 1000 10000<br>t [ms]<br>Fig. 6 Transient thermal impedance junction to case vs. time per diode<br>**----- End of picture text -----**<br>


IXYS reserves the right to change limits, conditions and dimensions. 

Data according to IEC 60747and per semiconductor unless otherwise specified 

20191219c 

© 2019 IXYS all rights reserved