Image not available
Illustrative purposes only
VUM24-05N
Bridge Rectifier, Single Phase, 600 V, 40 A, Module, 8 Pins, 1.65 V
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: IXYS SEMICONDUCTOR
- Product type: Bridge Rectifier Diodes
- SVHC: No SVHC (12-Jan-2017)
- No. of Pins: 8Pins
- No. of Phases: Single Phase
- Product Range: -
- Forward Voltage Max: 1.65V
- Forward Surge Current: 300A
- Average Forward Current: 40A
- Bridge Rectifier Mounting: Through Hole
- Operating Temperature Max: 150°C
- Bridge Rectifier Case Style: Module
- Repetitive Peak Reverse Voltage: 600V
| Delivery and price | |
|---|---|
| Units per pack | 100 |
| Price | 28.73 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
**VUM 24-05N** ## **Power MOSFET Stage for Boost Converters** Module for Power Factor Correction **ID25 = 35 A VDSS = 500 V RDS(on) =0.12 Ω** **==> picture [60 x 81] intentionally omitted <==** **----- Start of picture text -----**<br> 3 4<br>2<br>1<br>8<br>6 7<br>5<br>**----- End of picture text -----**<br> 5 1 3 2 7 8 4 6 1 **VRRM (Diode) VDSS Type** V V **600 500 VUM 24-05N** 8 6 7 5 **Symbol Conditions Maximum Ratings Features VDSS** TVJ = 25°C to 150°C 500 V • Package with DCB ceramic base plate **VDGR** TVJ = 25°C to 150°C; RGS = 10 kΩ 500 V • Soldering connections for PCB **VGS** Continuous ±20 V mounting **IIIDDDM** TTTSSS = 85°C= 25°C= 25°C, tp = ① 243595 AAA ••• Isolation voltage 3600 V~ Low R Low package inductance for highspeed switchingDS(on) HDMOS[TM] process **PD** TS = 85°C 170 W • Ultrafast boost diode **IS** VGS = 0 V, TS = 25°C 24 A • Kelvin source for easy drive **ISM** VGS = 0 V, TS = 25°C, tp = ① 95 A **Applications VRRM** 600 V **IdAV** TS = 85°C, rectangular δ = 0.5 40 A • Power factor pre-conditioner for SMPS, UPS, battery chargers and **IFSM** TVJ = 45°C, t = 10 ms (50 Hz) 300 A inverters t = 8.3 ms (60 Hz) 320 A • Boost topology for SMPS including TVJ = 150°C,t = 10 ms (50 Hz) 260 A 1~ rectifier bridge t = 8.3 ms (60 Hz) 280 A • Power supply for welding equipment **P** TS = 85°C 36 W **Advantages VRRM** 800 V • 3 functions in one package **IdAV** TS = 85°C, sinus 180° 40 A • Output power up to 5 kW **IFSM** TVJ = 45°C, t = 10 ms (50 Hz) 300 A • No external isolation t = 8.3 ms (60 Hz) 320 A • Easy to mount with two screws • Suitable for wave soldering TVJ = 150°C,t = 10 ms (50 Hz) 260 A • High temperature and power cycling t = 8.3 ms (60 Hz) 280 A capability ~~=~~ **P** TS = 85°C 33 W • Fits easiliy to all available PFC controller ICs **TVJ** -40...+150 °C **TJM** 150 °C **Tstg** -40...+150 °C **VISOL** 50/60 Hz t = 1 min 3000 V~ IISOL ≤ 1 mA t = 1 s 3600 V~ **Md** Mounting torque (M5) 2-2.5/18-22 Nm/lb.in. **Weight** 28 g ~~; |~~ ① Pulse width limited by TVJ IXYS reserves the right to change limits, test conditions and dimensions © 2007 IXYS All rights reserved 1 - 4 **VUM 24-05N** |**Symbol**||**Conditions**||**Characteristic Values**|**Characteristic Values**|**Characteristic Values**|**Characteristic Values**|**Characteristic Values**|||350|||||||||||||||||||||||||||||||||||| |---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---| ||||(TVJ= 25°C,|unless<br>**min.**|otherwise specified)<br>**typ.**<br>**max.**||||||A<br>300|||V<br>R= 0.8V<br>RRM||||||||||||||||||||||||||||||||| |**VDSS**<br>**VGS(th)**<br>**IGSS**||VGS= 0 V, ID= 2 mA<br>VDS = 20 V,<br>ID= 20 mA<br>VGS =±20 V, VDS= 0 V||500<br>2|||5<br>±500|V<br>V<br>nA|IFSM||200<br>250|||||||||||||||||TVJ=||||||45°C||||||||||||| |**IDSS**<br>**RDS(on)**||VDS = 500 V, VGS= 0 V<br>TVJ<br>= 25°C|||||2<br>0.12|mA<br>Ω|||150|||||||||||||||||||||||||||||||||||| |**RGint**<br>**gfs**<br>**VDS**<br>**td(on)**<br>**td(off)**|**MOSFET**|TVJ<br>= 25°C<br>VDS = 15 V,<br>IDS= 12 A<br>IDS<br>= 24 A,<br>VGS= 0 V<br>VDS= 250 V, IDS= 12 A, VGS= 10 V<br>Zgen. = 1Ω, L-load||||30|1.5<br>1.5<br>100<br>220|Ω<br>S<br>V<br>ns<br>ns|||0.001<br>0<br>50<br>100||||||||0.01<br>TVJ=|||||125°C||||||||0.1||||s|||||||||1|| |**Ciss**<br>**Coss**<br>**Crss**||VDS= 25 V, f = 1 MHz, VGS= 0 V||||8.5<br>0.9<br>0.3||nF<br>nF<br>nF|Fig.||1|Non-repetitive peak surge<br>current (Rectifier Diodes)<br>t||||||||||||||||||||||||||||||||||| |**Qg**||VDS = 250 V, ID= 12 A,|VGS= 10 V|||350||nC||||||||||||||||||||||||||||||||||||||| |**RthJH**||with heat transfer paste|||||0.38|K/W|||500|||||||||||||||||||||||||||||||||||| |**VF**||IF<br>= 22 A;<br>TVJ= 25°C|||||1.65|V|||A2s|||||||||||||||||||||||||||||||||||| |||TVJ=150°C|||||1.4|V|||400|||||||||||||||||||||||||||||||||||| |**IR**||VR<br>= 600 V, TVJ= 25°C|||||1.5|mA||||||||||||||||||||||||||||||||||||||| |**VT0**<br>**rT**|**Boost Diode**|VR<br>= 480 V, TVJ= 25°C<br>TVJ=125°C<br>For power-loss calculations only<br>TVJ<br>= 125°C|||||0.25<br>7<br>1.14<br>10|mA<br>mA<br>V<br>mΩ|I2t||200<br>300||||TVJ= 45°C|||||||||||||||||||||||||||||||| |**IRM**||IF<br>= 30 A;<br>-diF/dt = 240 A/μs||||||||||||||||||||||||||||||||||||||||||||| |||VR<br>= 350 V, TVJ= 100°C||||10|11|A|||100|||||||||||||||||||TVJ= 125°C||||||||||||||||| |**RthJH**||with heat transfer paste|||||1.8|K/W||||||||||||||||||||||||||||||||||||||| |**VF**<br>**IR**<br>**VT0**<br>**rT**|**Rectifier Diodes**|IF<br>= 20 A,<br>TVJ= 25°C<br>TVJ=125°C<br>VR<br>= 800 V<br>TVJ= 25°C<br>VR<br>= 640 V, TVJ=125°C<br>For power-loss calculations only<br>TVJ<br>= 125°C|||||1.4<br>1.4<br>0.25<br>2<br>1.05<br>16|V<br>V<br>mA<br>mA<br>V<br>mΩ|Fig.||2 <br>0|I2t for<br>1||||fusing (Rectifier<br>t|||||||||||||||||||Diodes)<br>ms|||||||||10||| |**RthJH**||with heat transfer paste|||||2|K/W||||||||||||||||||||||||||||||||||||||| **Dimensions in mm (1 mm = 0.0394")** IXYS reserves the right to change limits, test conditions and dimensions © 2007 IXYS All rights reserved 2 - 4 **VUM 24-05N** **==> picture [510 x 648] intentionally omitted <==** **----- Start of picture text -----**<br> 80 80 2.5<br>A 10 V A RDS(on) ID=18A<br>70 70<br>7 V 2.0<br>60 60<br>6 V<br>norm.<br>ID 50 ID 50 1.5<br>40 40 TTVJVJ = 25 = 125 ° C ° C<br>1.0<br>30 V GS = 5 V 30<br>20 20<br>0.5<br>10 10<br>0 0 0.0<br>0 2 4 6 8 V 10 2 3 4 5 6 V 7 -50 0 50 100 ° C 150<br>VDS VGS TVJ<br>Fig. 3 Typ. output characteristic Fig. 4 Typ. transfer characteristics Fig. 5 Typ. normalized<br>ID = f (VDS) (MOSFET) ID = f (VGS) (MOSFET) RDS(on) = f (TVJ) (MOSFET)<br>1.4 12 100<br>BVDSS V nF<br>V<br>GS(th)<br>10<br>1.2 VGS(th) VDSS 8 VI D DS== 250 V 18 A 10 Ciss<br>1.0 VGS IG = 10 mA C<br>norm.<br>6<br>0.8 Coss<br>4 1<br>0.6<br>2<br>Crss<br>0.4 0 0.1<br>-50 0 50 100 ° C 150 0 100 200 300 nC 400 0 5 10 15 V 20<br>TVJ Qg VDS<br>Fig. 6 Typ. normalized BVDSS = f (TVJ) Fig. 7 Typ. turn-on gate charge Fig. 8 Typ. capacitances C = f (VDS),<br>VGS(th) = f (TVJ) (MOSFET) characteristics, VGS = f (Qg) (MOSFET) f = 1 MHz (MOSFET)<br>80 120 3.0<br>s A μ C TVJ=100 ° C<br>VR= 350 V<br>100 2.5<br>60 max.<br>gfs IF 80 TVJ=150 ° C Qrr 2.0 I IFF = 37 A = 74 A<br>40 60 T VJ =100 ° C 1.5 I F = 37 A<br>TVJ= 25 ° C IF = 18.5 A<br>40 1.0<br>20<br>20 0.5<br>typ.<br>0 0 0.0<br>0 20 40 60 80 A 100 0.5 1.0 1.5 2.0 V 2.5 10 100 A/ μ s 1000<br>ID VF -diF/dt<br>Fig. 9 Typ. transconductance, Fig. 10 Forward current versus Fig. 11 Recovery charge versus -diF/dt<br>gfs = f (ID) (MOSFET) voltage drop (Boost Diode) (Boost Diode)<br>**----- End of picture text -----**<br> IXYS reserves the right to change limits, test conditions and dimensions © 2007 IXYS All rights reserved 3 - 4 **VUM 24-05N** **==> picture [505 x 206] intentionally omitted <==** **----- Start of picture text -----**<br> 50 1.4 0.6<br>A TVJ=100 ° C μ s TVJ=100 ° C<br>VR= 350 V 0.5 VR= 350 V<br>40 1.2<br>max.<br>IRM IF = 37 A Kt trr<br>0.4<br>30 IIIFFF = 74 A = 37 A = 18.5 A 1.0 IRM 0.3 max. IIIF F F = 37 A = 74 A = 37 A<br>20 0.8<br>0.2 IF = 18.5 A<br>typ. Qr<br>10 0.6<br>0.1<br>typ.<br>0 0.4 0.0<br>0 100 200 300 400 500A/ μ s 600 20 40 60 80 100 120 140°C 160 0 100 200 300 400 A/500 μ s 600<br>-diF/dt TTVJJ -diF/dt<br>Fig. 12 Peak reverse current versus Fig. 13 Dynamic parameters versus Fig. 14 Recovery time versus<br>-diF/dt (Boost Diode) junction temperature (Boost Diode) -diF/dt (Boost Diode)<br>**----- End of picture text -----**<br> **==> picture [506 x 420] intentionally omitted <==** **----- Start of picture text -----**<br> 18 0.9 8 7<br>V kW TS =85°C kW TS =85°C<br>16 μ s 7 6<br>14 0.7 6<br>VFR12 VFR Pout5 Vin = 230 V/50 Hz Pout 5 fc = 40 kHz<br>4<br>10 0.5 4<br>3<br>8 3<br>Vin = 115 V/60 Hz 2<br>6 0.3 2<br>tFR fc = 80 kHz<br>4 tFR 1 1<br>2 0.1 0 0<br>0 100 200 300 400 A/500 μ s 600 0 20 40 60 80 100kHz 120 0 50 100 150 200V 250<br>diF/dt fc Vin (RMS)<br>Fig. 15 Peak forward voltage versus Fig. 16 Output power versus carrier Fig. 17 Output power versus<br>-diF/dt (Boost Diode) frequency (Module) mains voltage<br>6 2.5<br>VUM 24<br>kW K/W<br>5 f c = 80 kHz<br>2.0<br>Vin = 230 V/50 Hz<br>4 ZthJC Rectifier Diodes<br>Pout 1.5<br>Boost Diode<br>3<br>Vin = 115 V/60 Hz 1.0<br>2<br>0.5 MOSFET<br>1<br>0 0.0<br>40 60 80 100 ° C 120 0.01 0.1 1 s 10<br>TS t<br>Fig. 18 Output power versus Fig. 19 Transient thermal impedance junction to case for all devices<br>heatsink temperature (Module)<br>**----- End of picture text -----**<br> IXYS reserves the right to change limits, test conditions and dimensions © 2007 IXYS All rights reserved 4 - 4
Updated at June 4, 2026
About Novapart
Novapart is a B2B electronic component broker specialising in stock shortages and cost reduction. We source hard-to-find parts and identify compliant alternatives across a catalogue of 410,000+ components from 500+ manufacturers.
Learn more →Stock Shortage Specialist
When a component is unavailable, discontinued or has an unacceptable lead time, we tap into our network of vetted European and Asian distributors to source what you need — without compromising on quality or traceability.
Request a quote →Compliant Alternatives
We identify pin-to-pin, electrically equivalent substitutes that meet the same certifications (RoHS, AEC-Q100, REACH) as your original specification — validated against datasheets, not just part numbers. Often at a lower cost.
BOM Analysis service →