Illustrative purposes only
VT6Z1T2R
Bipolar Transistor Array, NPN, PNP, 20 V, 200 mA, 150 mW, 120 hFE, VMT
⚠️ Given the current worldwide supply chain situation, we kindly ask you to take the information shown as a guideline.
- Manufacturer: ROHM
- Product type: Bipolar Junction Transistor Arrays - BJT
- Product variants: No other variants available. No other names.
- No. of Pins: 6Pins
- DC Current Gain hFE: 120hFE
- Transistor Mounting: Surface Mount
- Transistor Polarity: NPN, PNP
- DC Collector Current: 200mA
- Power Dissipation Pd: 150mW
- Power Dissipation NPN: 150mW
- Power Dissipation PNP: 150mW
- Transistor Case Style: VMT
- Transition Frequency NPN: 400MHz
- Transition Frequency PNP: 350MHz
- Operating Temperature Max: 150°C
- DC Current Gain hFE Min NPN: 120hFE
- DC Current Gain hFE Min PNP: 120hFE
- Continuous Collector Current NPN: 200mA
- Continuous Collector Current PNP: 200mA
- Collector Emitter Voltage Max NPN: 20V
- Collector Emitter Voltage Max PNP: 20V
- Collector Emitter Voltage V(br)ceo: 20V
| Delivery and price | |
|---|---|
| Units per pack | 5000 |
| Price | 0.055 € |
| Current stock | 7200 |
| Lead time | 7 days |
Datasheet
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