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VT6M1T2CR
Dual MOSFET, Complementary N and P Channel, 20 V, 20 V, 100 mA, 100 mA, 3.5 ohm
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: ROHM
- Product type: Dual MOSFETs
- Transistor Polarity:N and P Channel; Continuous Drain Current Id:100mA; Drain Source Voltage Vds:20V; On Resistance Rds(on):2.5ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:1V; Pow
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (17-Jan-2023)
- No. of Pins: 6Pins
- Channel Type: Complementary N and P Channel
- Product Range: -
- Qualification: -
- Transistor Case Style: VMT
- Operating Temperature Max: 150°C
- Power Dissipation N Channel: 150mW
- Power Dissipation P Channel: 150mW
- Drain Source Voltage Vds N Channel: 20V
- Drain Source Voltage Vds P Channel: 20V
- Continuous Drain Current Id N Channel: 100mA
- Continuous Drain Current Id P Channel: 100mA
- Drain Source On State Resistance N Channel: 3.5ohm
- Drain Source On State Resistance P Channel: 3.8ohm
| Delivery and price | |
|---|---|
| Units per pack | 10 |
| Price | 0.171 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## 1.2V Drive Nch + Pch MOSFET ## **VT6M1** ## **Structure** Silicon N-channel MOSFET/ Silicon P-channel MOSFET ## **Features** 1) Low on-resistance. - 2) Small package(VMT6). - 3) Low voltage drive(1.2V drive). ## **Dimensions** (Unit : mm) **==> picture [128 x 111] intentionally omitted <==** **----- Start of picture text -----**<br> VMT6<br>1.2 0.5<br>(6) (5) (4)<br>aol (1) (2) (3) i<br>0.16 0.13<br>te 0.4 0.4<br>0.8 ± 0.1<br>Abbreviated symbol : M01<br>0.14<br>1.2 0.92<br>0.14<br>**----- End of picture text -----**<br> **Application** Switching ## **Packaging specifications** |Type|Package|Taping| |---|---|---| ||Code|T2CR| ||Basic orderingunit(pieces)|8000| |g(p)<br>VT6M1||| ## **Inner circuit** **==> picture [149 x 117] intentionally omitted <==** **----- Start of picture text -----**<br> (6) (5) (4)<br>∗ 1<br>∗ 2 ∗ 2<br>(1) Tr1 Source ∗ 1<br>(2) Tr1 Gate<br>(3) Tr2 Drain<br>(4) Tr2 Source (1) (2) (3)<br>(5) Tr2 Gate 1 ESD PROTECTION DIODE<br>(6) Tr1 Drain 2 BODY DIODE<br>**----- End of picture text -----**<br> **Absolute maximum ratings** (Ta = 25C) |Parameter|Parameter|Symbol<br>~~SE~~|Limits<br>~~SE~~|Limits<br>~~SE~~|Unit| |---|---|---|---|---|---| ||||Tr1 : N-ch <br>~~SE~~|Tr2 : P-ch<br>~~SE~~|| |Drain-source voltage||VDSS<br>~~aa~~<br>|20<br>~~aa~~<br>~~ee~~|20<br>~~aa~~|V| |Gate-source voltage||VGSS<br>~~a~~<br>~~ee~~|8<br>~~aee~~<br>~~ee~~|10|V| |Drain current|Continuous<br>~~ee~~|ID<br><br>~~ee~~<br>~~ee~~<br>~~ee~~|100<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|100<br>~~ee~~<br>~~ee~~|mA<br>~~ee~~| ||Pulsed<br>~~ee~~<br>~~|~~|IDP<br>*1<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~|-——~~|400<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~-——~~|400<br>~~ee~~<br>~~ee~~<br>~~-——~~|mA<br>~~ee~~| |Power dissipation<br>~~|~~||PD<br>*2<br>~~ee~~<br>~~|-——~~|0.15<br>~~ee~~<br>~~ee~~<br>~~-——~~||W / TOTAL<br>~~ee~~| ||||0.12<br>~~-——~~||W / ELEMENT| |Channel temperature<br>~~|~~||Tch<br>~~| -——~~<br>~~a~~|150<br>~~-——~~||C| |Range of storage temperature||Tstg<br>~~a~~|55 to150||C| *1 Pw10s, Duty cycle1% - *2 Each terminal mounted on a recommended land. www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. **2011.09 - Rev.A** 1/8 Data Sheet **VT6M1** **Electrical characteristics** (Ta = 25C) <Tr1(Nch)> |<Tr1(Nch)>||||||| |---|---|---|---|---|---|---| |Parameter|Symbol|Min.|Typ.|Max.|Unit|Conditions| |Gate-source leakage|IGSS|-|-|10|A|VGS=±8V,VDS=0V| |Drain-source breakdown voltage|V(BR)DSS|20|-|-|V|ID=1mA,VGS=0V| |Zerogate voltage drain current|IDSS|-|-|1|A|VDS=20V,VGS=0V| |Gate threshold voltage|VGS(th)|0.3|-|1.0|V|VDS=10V,ID=100A| |Static drain-source on-state<br>resistance|RDS (on)<br>*|-|2.5|3.5||ID=100mA,VGS=4.5V| |||-|3.0|4.2||ID=100mA,VGS=2.5V| |||-|3.8|5.3||ID=50mA,VGS=1.8V| |||-|4.5|9.0||ID=20mA,VGS=1.5V| |||-|6.0|18.0||ID=10mA,VGS=1.2V| |Forward transfer admittance|l Yfsl<br>*|180|-|-|mS|VDS=10V,ID=100mA| |Input capacitance|Ciss|-|7.1|-|pF|VDS=10V<br>VGS=0V<br>f=1MHz| |Output capacitance|Coss|-|3.3|-|pF|| |Reverse transfer capacitance|Crss|-|1.7|-|pF|| |Turn-on delaytime|td(on)<br>*|-|5|-|ns|VDD 10V, ID=50mA<br>VGS=4.5V<br>RL=200RG=10| |Rise time|tr<br>*|-|4|-|ns|| |Turn-off delaytime|td(off)<br>*|-|20|-|ns|| |Fall time|tf<br>*|-|38|-|ns|| *Pulsed ## **Body diode characteristics** (Source-Drain) |Parameter|Symbol|Min.|Typ.|Max.|Unit|Conditions| |---|---|---|---|---|---|---| |Forward Voltage|VSD<br>*|-|-|1.2|V|Is=100mA, VGS=0V| *Pulsed www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. **2011.09 - Rev.A** 2/8 Data Sheet **VT6M1** ## **Electrical characteristics** (Ta = 25C) <Tr2(Pch)> |<Tr2(Pch)>||||||| |---|---|---|---|---|---|---| |Parameter|Symbol|Min.|Typ.|Max.|Unit|VGS=10V,VDS=0V<br>ID=1mA,VGS=0V<br>VDS=20V,VGS=0V<br>VDS=10V,ID=100A<br>ID=100mA,VGS=4.5V<br>ID=50mA,VGS=2.5V<br>ID=20mA,VGS=1.8V<br>ID=10mA,VGS=1.5V<br>ID=1mA,VGS=1.2V<br>VDS=10V,ID=100mA<br>VDS=10V<br>VGS=0V<br>f=1MHz<br>VDD 10V, ID=50mA<br>VGS=4.5V<br>RL=200RG=10<br>Conditions| |Gate-source leakage|IGSS|-|-|10|A|| |Drain-source breakdown voltage|V(BR)DSS|20|-|-|V|| |Zerogate voltage drain current|IDSS||-|1|A|| |Gate threshold voltage|VGS(th)|0.3|-|1.0|V|| |Static drain-source on-state<br>resistance|RDS (on)<br>*|-|2.5|3.8||| |||-|3.4|5.1||| |||-|4.8|8.2||| |||-|6.0|13.2||| |||-|13.3|53.2||| |Forward transfer admittance|l Yfsl<br>*|120|-|-|mS|| |Input capacitance|Ciss|-|15.0|-|pF|| |Output capacitance|Coss|-|4.0|-|pF|| |Reverse transfer capacitance|Crss|-|1.5|-|pF|| |Turn-on delaytime|td(on)<br>*****|-|46|-|ns|| |Rise time|tr<br>*****|-|62|-|ns|| |Turn-off delaytime|td(off)<br>*****|-|325|-|ns|| |Fall time|tf<br>*****|-|137|-|ns|| *Pulsed ## **Body diode characteristics** (Source-Drain) |Parameter|Symbol|Min.|Typ.|Max.|Unit|Conditions| |---|---|---|---|---|---|---| |Forward Voltage|VSD<br>*|-|-|1.2|V|Is=100mA, VGS=0V| *Pulsed www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. **2011.09 - Rev.A** 3/8 Data Sheet **VT6M1** ## **Electrical characteristic curves** 〈Tr.1(Nch)〉 **==> picture [478 x 569] intentionally omitted <==** **----- Start of picture text -----**<br> 0.1 0.1 1<br>0.08 VVVVVGSGSGSGSGS= 4.5V = 4.0V = 2.5V = 1.8V = 1.5V 0.08 VVVVVGSGSGSGSGS= 4.5V = 4.0V = 2.5V = 1.8V = 1.5V TPulsed a=25°C 0.1 VPulsed DS= 10V<br>0.06 0.06 VGS= 1.2V<br>0.01<br>0.04 VGS= 1.2V 0.04 Ta= 125°C<br>Ta= 75°C<br>0.02 Ta=25°C 0.02 0.001 TTaa= 25= - 25°C °C<br>Pulsed<br>0 0 0.0001<br>0 0.2 0.4 0.6 0.8 1 0 2 4 6 8 10 0 0.5 1 1.5 2<br>DRAIN-SOURCE VOLTAGE : VDS[V] DRAIN-SOURCE VOLTAGE : VDS[V] GATE-SOURCE VOLTAGE : VGS[V]<br>Fig.1 Typical Output Characteristics(Ⅰ) Fig.2 Typical Output Characteristics(Ⅱ) Fig.3 Typical Transfer Characteristics<br>100000 100000 100000<br>10000 TPulsed a=25°C VVVVVGSGSGSGSGS= 1.2V = 1.5V = 1.8V = 2.5V = 4.5V 10000 VPulsed GS= 4.5V TTTTaaaa= 125= 75= 25= - 25°°C C °°C C 10000 VPulsed GS= 2.5V TTTTaaaa= 125= 75= 25= - 25°°C C °°C C<br>.<br>1000 1000 1000<br>100 100 100<br>0.0001 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1<br>DRAIN-CURRENT : ID[A] DRAIN-CURRENT : ID[A] DRAIN-CURRENT : ID[A]<br>Fig.4 Static Drain-Source On-State Fig.5 Static Drain-Source On-State Fig.6 Static Drain-Source On-State<br> Resistance vs. Drain Current(Ⅰ) Resistance vs. Drain Current(Ⅱ) Resistance vs. Drain Current(Ⅲ)<br>100000 100000 100000<br>VPulsed GS= 1.8V TTaa= 125= 75°C °C VPulsed GS= 1.5V TTaa= 125= 75°C °C VPulsed GS= 1.2V TTaa= 125= 75°C °C<br>Ta= 25°C Ta= 25°C Ta= 25°C<br>10000 Ta= - 25°C 10000 Ta= - 25°C 10000 Ta= - 25°C<br>1000 1000 1000<br>100 100 100<br>0.0001 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1<br>DRAIN-CURRENT : ID[A] DRAIN-CURRENT : ID[A] DRAIN-CURRENT : ID[A]<br>Fig.7 Static Drain-Source On-State Fig.8 Static Drain-Source On-State Fig.9 Static Drain-Source On-State<br> Resistance vs. Drain Current(Ⅳ) Resistance vs. Drain Current(Ⅴ) Resistance vs. Drain Current( Ⅵ )<br>[A] D [A] D DRAIN CURRENT : I[A] D<br>DRAIN CURRENT : I DRAIN CURRENT : I<br>] [mΩ)(DSon ] [mΩ)(DSon ] [mΩ)(DSon<br>RESISTANCE : R RESISTANCE : R RESISTANCE : R<br>STATIC DRAIN-SOURCE ON-STATE STATIC DRAIN-SOURCE ON-STATE STATIC DRAIN-SOURCE ON-STATE<br>] ] ]<br>Ω Ω Ω<br>[m)(DSon [m)(DSon [m)(DSon<br>RESISTANCE : R RESISTANCE : R RESISTANCE : R<br>STATIC DRAIN-SOURCE ON-STATE STATIC DRAIN-SOURCE ON-STATE STATIC DRAIN-SOURCE ON-STATE<br>**----- End of picture text -----**<br> www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. **2011.09 - Rev.A** 4/8 Data Sheet **VT6M1** **==> picture [509 x 677] intentionally omitted <==** **----- Start of picture text -----**<br> 1 1 10000<br>VPulsed DS= 10V VPulsed GS=0V TPulsed a=25℃<br>8000<br>ID= 0.01A<br>6000<br>ID= 0.1A<br>0.1 Ta= -25°C 0.1<br>TTTaaa=25=75=125°°C C °C TTTaaa= 125= 75= 25°°C C °C 40002000<br>Ta= - 25°C<br>0.01 0.01 0<br>0.01 0.1 1 0 0.5 1 1.5 0 2 4 6 8<br>DRAIN-CURRENT : ID[A] SOURCE-DRAIN VOLTAGE : VSD [V] GATE-SOURCE VOLTAGE : VGS[V]<br>Fig.10 Forward Transfer Admittance Fig.11 Reverse Drain Current Fig.12 Static Drain-Source On-State<br> vs. Drain Current vs. Sourse-Drain Voltage Resistance vs. Gate Source Voltage<br>1000 100<br>100 td(off) tf TVVRPulsed aDDGSG=25=10Ω =10V =4.5V °C Tf=1MHz VaGS=25=0V °C Ciss<br>10<br>10 td(on)<br>Crss<br>tr Coss<br>1 1<br>0.01 0.1 1 0.01 0.1 1 10 100<br>DRAIN-CURRENT : ID[A] DRAIN-SOURCE VOLTAGE : VDS[V]<br>Fig.13 Switching Characteristics Fig.14 Typical Capacitance<br> vs. Drain-Source Voltage<br>| [S]<br>fs<br>]<br> [A] s [mΩ)(ONDS<br>SOURCE CURRENT : I RESISTANCE : R<br>STATIC DRAIN-SOURCE ON-STATE<br>FORWARD TRANSFER ADMITTANCE : |Y<br>SWITCHING TIME : t [ns] CAPACITANCE : C [pF]<br>**----- End of picture text -----**<br> www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. **2011.09 - Rev.A** 5/8 Data Sheet **VT6M1** ## 〈Tr.2(Pch)〉 **==> picture [476 x 566] intentionally omitted <==** **----- Start of picture text -----**<br> 0.1 0.1 1<br>TPulsed a=25°C VPulsed DS= -10V<br>0.08 0.08<br>VGS= -1.5V 0.1<br>Ta= 125°C<br>0.060.04 VVVVGSGSGSGS= = = = ----4.5V 4.0V 2.5V 2.0V 0.060.04 VVVVVGSGSGSGSGS= = = = = -----4.5V 4.0V 2.5V 2.0V 1.8V 0.01 TTTa= aa= 75= 25-25°°°C C C<br>VGS= -1.5V VGS= -1.8V 0.001<br>0.02 0.02<br>VGS= -1.2V VGS= -1.2V Ta=25°C<br>Pulsed<br>0 0 0.0001<br>0 0.2 0.4 0.6 0.8 1 0 2 4 6 8 10 0 0.5 1 1.5 2<br>DRAIN-SOURCE VOLTAGE : -VDS[V] DRAIN-SOURCE VOLTAGE : -VDS[V] GATE-SOURCE VOLTAGE : -VGS[V]<br>Fig.1 Typical output characteristics(Ⅰ) Fig.2 Typical output characteristics(Ⅱ) Fig.3 Typical Transfer Characteristics<br>100000 100000 100000<br>TPulsed a=25°C VPulsed GS= -4.5V Ta= 125°C VPulsed GS= -2.5V<br>Ta= 75°C<br>10000 10000 TTaa= 25= -25°C °C 10000<br>VGS= -1.2V Ta= 125°C<br>1000 VGS= -1.5V 1000 1000 Ta= 75°C<br>VGS= -1.8V Ta= 25°C<br>VVGSGS== - -2.5V 4.5V Ta= -25°C<br>100 100 100<br>0.0001 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1<br>DRAIN-CURRENT : -ID[A] DRAIN-CURRENT : -ID[A] DRAIN-CURRENT : -ID[A]<br>Fig.4 Static Drain-Source On-State Fig.5 Static Drain-Source On-State Fig.6 Static Drain-Source On-State<br> Resistance vs. Drain Current(Ⅰ) Resistance vs. Drain Current(Ⅱ) Resistance vs. Drain Current(Ⅲ)<br>100000 100000 100000<br>10000 VPulsed GS= -1.8V TTTTaaaa= 125= 75= 25= -25°°C C °°C C 10000 VPulsed GS= -1.5V TTTTaaaa= 125= 75= 25= -25°°C C °°C C 10000 VPulsed GS= -1.2V<br>Ta= 125°C<br>Ta= 75°C<br>Ta= 25°C<br>1000 1000 1000 Ta= -25°C<br>100 100 100<br>0.0001 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1<br>DRAIN-CURRENT : -ID[A] DRAIN-CURRENT : -ID[A] DRAIN-CURRENT : -ID[A]<br>Fig.7 Static Drain-Source On-State Fig.8 Static Drain-Source On-State Fig.9 Static Drain-Source On-State<br> Resistance vs. Drain Current(Ⅳ) Resistance vs. Drain Current(Ⅴ) Resistance vs. Drain Current(Ⅵ)<br>DRAIN CURRENT :[A] I -D [A] I-D [A] I-D<br>DRAIN CURRENT : DRAIN CURRENT :<br>]<br>] Ω ] Ω )[mΩ<br>)[m(ONDS )[m(ONDS (RESISTANCE : RONDS<br>RESISTANCE : R RESISTANCE : R<br>STATIC DRAIN-SOURCE ON-STATE<br>STATIC DRAIN-SOURCE ON-STATE STATIC DRAIN-SOURCE ON-STATE<br>)[m(RESISTANCE : R] ΩONDS )[m(RESISTANCE : R] ΩONDS )[m(RESISTANCE : R] ΩONDS<br>STATIC DRAIN-SOURCE ON-STATE STATIC DRAIN-SOURCE ON-STATE STATIC DRAIN-SOURCE ON-STATE<br>**----- End of picture text -----**<br> www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. **2011.09 - Rev.A** 6/8 Data Sheet **VT6M1** **==> picture [509 x 677] intentionally omitted <==** **----- Start of picture text -----**<br> 1 1 10000<br>VPulsed DS= -10V VPulsed GS=0V TPulsed a=25°C<br>8000<br>ID= -0.001A<br>6000<br>0.1 TTaa= 125= 75°C °C 0.1 TTTa= 125aa= 75= 25°°°C C C 4000 ID= -0.1A<br>Ta= 25°C Ta= -25°C<br>Ta= -25°C 2000<br>0.01 0.01 0<br>0.01 0.1 1 0 0.5 1 1.5 0 2 4 6 8 10<br>DRAIN-CURRENT : -ID[A] SOURCE-DRAIN VOLTAGE : -VSD [V] GATE-SOURCE VOLTAGE : -VGS[V]<br>Fig.10 Forward Transfer Admittance Fig.11 Reverse Drain Current Fig.12 Static Drain-Source On-State<br> vs. Drain Current vs. Sourse-Drain Voltage Resistance vs. Gate Source Voltage<br>1000 100<br>Ta=25°C<br>td(off) VDD= -10V Ciss<br>VGS=-4.5V<br>RG=10Ω<br>Pulsed 10<br>100<br>tf<br>1 Coss<br>td(on) Crss Ta=25°C<br>tr f=1MHz<br>VGS=0V<br>10 0<br>0.01 0.1 1 0.01 0.1 1 10 100<br>DRAIN-CURRENT : -ID[A] GATE-SOURCE VOLTAGE : -VDS[V]<br>Fig.13 Switching Characteristics Fig.14 Typical Capacitance<br> vs. Drain-Source Voltage<br>[A] I-S )[m] Ω<br>(ONDS<br>RESISTANCE : R<br>STATIC DRAIN-SOURCE ON-STATE<br>REVERSE DRAIN CURRENT :<br>FORWARD TRANSFER ADMITTANCE : |Yfs| [S]<br>SWITCHING TIME : t [ns]<br>CAPACITANCE : C [pF]<br>**----- End of picture text -----**<br> www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. **2011.09 - Rev.A** 7/8 Data Sheet **VT6M1** ## **Measurement circuits** <Tr1(Nch)> **==> picture [274 x 93] intentionally omitted <==** **----- Start of picture text -----**<br> Pulse width<br>VGS ID<br>VDS 50% 90% 50%<br>RL VGS 10%<br>VDS<br>D.U.T. 10% 10%<br>RG VDD 90% 90%<br>td(on) tr td(off) tf<br>ton toff<br>**----- End of picture text -----**<br> Fig.1-1 Switching Time Measurement Circuit Fig.1-2 Switching Waveforms ## <Tr2(Pch)> **==> picture [143 x 97] intentionally omitted <==** **----- Start of picture text -----**<br> ID<br>VGS VDS<br>RL<br>D.U.T.<br>RG VDD<br>Fig.1-1 Switching Time Measurement Circuit<br>**----- End of picture text -----**<br> **==> picture [121 x 93] intentionally omitted <==** **----- Start of picture text -----**<br> Pulse width<br>VGS 1 0%<br>50% 90% 50%<br>10% 10%<br>90% 90%<br>VDS<br>td(on) tr td(off) tf<br>ton toff<br>**----- End of picture text -----**<br> Fig.1-2 Switching Waveforms ## **Notice** This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit. www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. **2011.09 - Rev.A** 8/8 Notice ## N o t e s Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ## ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A
Updated at June 9, 2026
Founded with a steadfast commitment to a "Quality First" corporate policy, ROHM is a globally recognized leader in the design and manufacture of semiconductors and electronic components. Originally named for its foundational product, resistors, combined with the unit of resistance, the "R" in ROHM has evolved to represent the brand's enduring dedication to reliability. Today, the company is renowned for driving technological advancement and supplying high-performance, dependable solutions to engineers worldwide. The company's engineering excellence is most prominently showcased in its expansive portfolio of discrete semiconductors. ROHM provides an industry-leading selection of bipolar transistors, alongside a massive array of Zener single diodes, Schottky diodes, and small signal diodes. Engineered for rigorous efficiency and compact footprint requirements, these foundational components are critical for modern power management, precise signal processing, and high-speed switching applications. In addition to its core discrete offerings, ROHM delivers advanced power control and circuit protection solutions. This includes a highly trusted lineup of single and dual MOSFETs, single IGBTs, and transient voltage suppressors (TVS diodes) designed to safeguard sensitive circuitry. Complemented by intelligent power modules, precision sensors, and specialized ICs, ROHM equips designers with the premium components necessary to build the next generation of robust electronic infrastructure.
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