VS-VSKT56/16

THYRISTOR DIODE MOD, 1.6KV, 135A/TO240AA

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Manufacturer: VISHAY
Product type: Thyristors - SCR Modules
SVHC: To Be Advised
No. of Pins: 7Pins
Product Range: VS-VSK.56xx
SCR Module Type: Series Connected - SCRs
Thyristor Mounting: Panel
On State RMS Current: 135A
Thyristor Case Style: TO-240AA
Average Forward Current: 60A
Gate Trigger Current Max: 150mA
Gate Trigger Voltage Max: 2.5V
Operating Temperature Max: 125°C
Repetitive Peak Reverse Voltage: 1.6kV
Peak Repetitive Off State Voltage: 1.6kV

Delivery and price
Units per pack	1
Price	27.18 €
Current stock	10+
Lead time	30 days

Datasheet

## **VS-VSK.41.., VS-VSK.56.. Series** 

www.vishay.com a ~~[OO]~~ **AAP Gen 7 (TO-240AA) Power Modules Thyristor/Diode and Thyristor/Thyristor, 45 A, 60 A** 

Vishay Semiconductors 

## **FEATURES** 

- High voltage 

- Industrial standard package 

- Low thermal resistance 

- UL approved file E78996 

- Designed and qualified for industrial level 

- Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 ~~oO~~ 

## **BENEFITS** 

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## **PRIMARY CHARACTERISTICS** 

|IT(AV)or IF(AV)|45 A, 60 A|
|---|---|
|Type|Modules - thyristor, standard|
|Package|AAP Gen 7 (TO-240AA)|



- Excellent thermal performances obtained by the usage of exposed direct bonded copper substrate 

- Up to 1600 V 

- High surge capability 

- Easy mounting on heatsink 

## **ELECTRICAL DESCRIPTION** 

## **MECHANICAL DESCRIPTION** 

The AAP Gen 7 (TO-240AA), new generation of AAP module, combines the excellent thermal performances obtained by the usage of exposed direct bonded copper substrate, with advanced compact simple package solution and simplified internal structure with minimized number of interfaces. 

These modules are intended for general purpose high voltage applications such as high voltage regulated power supplies, lighting circuits, temperature and motor speed control circuits, UPS, and battery charger. 

|**MAJOR RATINGS AND CHARACTERISTICS**<br>~~a~~<br>~~Re~~|**MAJOR RATINGS AND CHARACTERISTICS**<br>~~a~~<br>~~Re~~|**MAJOR RATINGS AND CHARACTERISTICS**<br>~~a~~<br>~~Re~~|**MAJOR RATINGS AND CHARACTERISTICS**<br>~~a~~<br>~~Re~~|**MAJOR RATINGS AND CHARACTERISTICS**<br>~~a~~<br>~~Re~~|
|---|---|---|---|---|
|**SYMBOL**<br>~~Re~~<br>~~a~~|**CHARACTERISTICS**<br>|**VS-VSK.41**<br><br>~~C~~<br>~~a~~|**VS-VSK.56**<br><br>~~n~~|**UNITS**<br>~~ne~~|
|IT(AV)or IF(AV)<br>~~Ress~~<br>~~a~~|85 °C<br>~~ss~~|45<br>~~ss~~<br>~~C~~<br>~~a~~|60<br>~~ss~~<br>~~n~~|A<br>~~ne~~|
|IO(RMS)<br>~~a~~<br>~~_—————E~~|As AC switch<br>~~—————E~~|100<br>~~C~~<br>~~a~~<br>~~—————E~~|135<br>~~n~~<br>~~—————E~~||
|ITSM,<br>IFSM<br>~~a~~<br>~~_—————E~~|50 Hz<br>~~—————E~~<br>~~ee~~|850<br>~~C~~<br>~~a~~<br>~~—————E~~<br>~~ee~~|1200<br>~~n~~<br>~~—————E~~||
||60 Hz<br>~~—————E~~<br>~~ee~~|890<br>~~a~~<br>~~—————E~~<br>~~ee~~|1256<br>~~n~~<br>~~—————E~~||
|I2t<br>~~_—————E~~<br>~~pA]~~<br>~~ee~~|50 Hz<br>~~—————E~~<br>~~ee~~<br>~~pA]~~<br>~~ee~~|3.61<br>~~a~~<br>~~—————E~~<br>~~ee~~<br>~~pA]~~<br>~~ee~~|7.20<br>~~n~~<br>~~—————E~~<br>~~pA]~~|kA2s<br>~~ne~~<br>~~pA]~~|
||60 Hz<br>~~pA]~~<br>~~ee~~|3.30<br>~~pA]~~<br>~~ee~~|6.57<br>~~pA]~~||
|I2t<br>~~pA]~~<br>~~ee~~<br>~~ee~~|~~pA]~~<br>~~ee~~|36.1<br>~~pA]~~<br>~~ee~~|72<br>~~pA]~~|kA2s<br>~~pA]~~|
|VDRM/VRRM<br>~~ee~~<br>~~ee~~<br>~~ee~~|Range<br>~~ee~~|400 to 1600<br>~~ee~~|400 to 1600|V|
|TStg<br>~~ee~~<br>~~ee~~<br>~~ee~~||-40 to +125||°C|
|TJ<br>~~ee~~<br>~~ee~~||-40 to +125||°C|



Revision: 26-Jul-2018 

Document Number: 94630 

**1** 

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**VS-VSK.41.., VS-VSK.56.. Series** 

**==> picture [59 x 48] intentionally omitted <==**

www.vishay.com 

## Vishay Semiconductors 

## **ELECTRICAL SPECIFICATIONS** 

## **VOLTAGE RATINGS** 

|**VOLTAGE RATINGS**|**VOLTAGE RATINGS**|**VOLTAGE RATINGS**|**VOLTAGE RATINGS**|**VOLTAGE RATINGS**|**VOLTAGE RATINGS**|
|---|---|---|---|---|---|
|**TYPE NUMBER**|**VOLTAGE**<br>**CODE**|**VRRM, MAXIMUM**<br>**REPETITIVE PEAK**<br>**REVERSE VOLTAGE**<br>**V**|**VRSM, MAXIMUM**<br>**NON-REPETITIVE PEAK**<br>**REVERSE VOLTAGE**<br>**V**|**VDRM, MAXIMUM REPETITIVE**<br>**PEAK OFF-STATE VOLTAGE,**<br>**GATE OPEN CIRCUIT**<br>**V**|**IRRM,IDRM**<br>**AT 125 °C**<br>**mA**|
|VS-VSK.41<br>VS-VSK.56|04|400|500|400|15|
||06|600|700|600||
||08|800|900|800||
||10|1000|1100|1000||
||12|1200|1300|1200||
||14|1400|1500|1400||
||16|1600|1700|1600||



## **ON-STATE CONDUCTION** 

|**ON-STATE CONDUCTION**|**ON-STATE CONDUCTION**|**ON-STATE CONDUCTION**|**ON-STATE CONDUCTION**|**ON-STATE CONDUCTION**|**ON-STATE CONDUCTION**|**ON-STATE CONDUCTION**|**ON-STATE CONDUCTION**|**ON-STATE CONDUCTION**|
|---|---|---|---|---|---|---|---|---|
|**PARAMETER**|**SYMBOL**||**TEST CONDITIONS**|||**VSK.41**|**VSK.56**|**UNITS**|
|Maximum average on-state current (thyristors)|IT(AV)|180°<br>TC=|conduction, half sine wave,<br>85 °C|||45|60|A|
|Maximum average forward current (diodes)|IF(AV)||||||||
|Maximum continuous RMS on-state current,<br>as AC switch|IO(RMS)||or<br>I(RMS)<br>I(RMS)|||100|135||
|Maximum peak, one-cycle non-repetitive<br>on-state or forward current|ITSM<br>or<br>IFSM|t = 10 ms||No voltage<br>reapplied|Sinusoidal<br>half wave,<br>initial TJ=<br>TJmaximum|850|1200||
|||t = 8.3 ms||||890|1256||
|||t = 10 ms||100 % VRRM<br>reapplied||715|1000||
|||t = 8.3 ms||||750|1056||
|Maximum I2t for fusing|I2t|t = 10 ms||No voltage<br>reapplied|Initial TJ=<br>TJmaximum|3.61|7.20|kA2s|
|||t = 8.3 ms||||3.30|6.57||
|||t = 10 ms||100 % VRRM<br>reapplied||2.56|5.10||
|||t = 8.3 ms||||2.33|4.56||
|Maximum I2t for fusing|I2t(1)|t = 0.1 ms to 10 ms, no voltage reapplied<br>TJ= TJmaximum||||36.1|72|kA2s|
|Maximum value or threshold voltage|VT(TO) (2)|Low level(3)||TJ= TJmaximum||1.08|0.91|V|
|||High level(4)||||1.12|1.02||
|Maximum value of on-state<br>slope resistance|rt (2)|Low level(3)||TJ= TJmaximum||4.7|4.27|m|
|||High level(4)||||4.5|3.77||
|Maximum peak on-state or forward voltage|VTM|ITM=x IT(AV)||TJ= 25 °C||1.81|1.7|V|
||VFM|IFM=x IF(AV)|||||||
|Maximum non-repetitive rate of rise of<br>turned on current|dI/dt|TJ= 25 °C, from 0.67 VDRM,<br>ITM=x IT(AV), Ig= 500 mA, tr< 0.5 μs, tp> 6 μs||||150||A/μs|
|Maximum holding current|IH|TJ= 25 °C, anode supply = 6 V,<br>resistive load,gate open circuit||||200||mA|
|Maximum latching current|IL|TJ= 25 °C, anode supply = 6 V, resistive load||||400|400||



## **Notes** 

> (1) I2t for time tx = I2  t x  tx 

> (2) Average power = VT(TO) x IT(AV) + rt x (IT(RMS))2 

- (3) 16.7 % x  x IAV < I <  x IAV 

- (4) I >  x IAV 

Revision: 26-Jul-2018 

Document Number: 94630 

**2** 

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**==> picture [59 x 48] intentionally omitted <==**

www.vishay.com 

## **VS-VSK.41.., VS-VSK.56.. Series** 

## Vishay Semiconductors 

|**TRIGGERING**|**TRIGGERING**||||||
|---|---|---|---|---|---|---|
|**PARAMETER**|**SYMBOL**|**TEST CONDITIONS**||**VS-VSK.41**|**VS-VSK.56**|**UNITS**|
|Maximum peak gate power|PGM|||10||W|
|Maximum average gate power|PG(AV)|||2.5|||
|Maximum peak gate current|IGM|||2.5||A|
|Maximum peak negative gate voltage|- VGM|||10||V|
|Maximum gate voltage required to trigger|VGT|TJ= -40 °C|Anode supply = 6 V<br>resistive load|4.0|||
|||TJ= 25 °C||2.5|||
|||TJ= 125 °C||1.7|||
|Maximum gate current required to trigger|IGT|TJ= -40 °C|Anode supply = 6 V<br>resistive load|270||mA|
|||TJ= 25 °C||150|||
|||TJ= 125 °C||80|||
|Maximum gate voltage that will not trigger|VGD|TJ= 125 °C, rated VDRMapplied||0.25||V|
|Maximum gate current that will not trigger|IGD|TJ= 125 °C, rated VDRMapplied||6||mA|



|**BLOCKING**|**BLOCKING**|**BLOCKING**|**BLOCKING**|**BLOCKING**|**BLOCKING**|
|---|---|---|---|---|---|
|**PARAMETER**|**SYMBOL**|**TEST CONDITIONS**|**VS-VSK.41**|**VS-VSK.56**|**UNITS**|
|Maximum peak reverse and off-state<br>leakage current at VRRM, VDRM|IRRM,<br>IDRM|TJ= 125 °C, gate open circuit|15||mA|
|Maximum RMS insulation voltage|VINS|50 Hz|3000 (1 min)<br>3600 (1 s)||V|
|Maximum critical rate of rise of off-state voltage|dV/dt|TJ= 125 °C, linear to 0.67 VDRM|1000||V/μs|



## **THERMAL AND MECHANICAL SPECIFICATIONS** 

|**THERMAL AND MECHANICAL SPECIFICATIONS**|**THERMAL AND MECHANICAL SPECIFICATIONS**|**THERMAL AND MECHANICAL SPECIFICATIONS**|**THERMAL AND MECHANICAL SPECIFICATIONS**|**THERMAL AND MECHANICAL SPECIFICATIONS**|**THERMAL AND MECHANICAL SPECIFICATIONS**|**THERMAL AND MECHANICAL SPECIFICATIONS**|
|---|---|---|---|---|---|---|
|**PARAMETER**||**SYMBOL**|**TEST CONDITIONS**|**VS-VSK.41**|**VS-VSK.56**|**UNITS**|
|Junction operating and storage<br>temperature range||TJ, TStg||-40 to +125||°C|
|Maximum internal thermal resistance,<br>junction to case per leg||RthJC|DC operation|0.44|0.35|°C/W|
|Typical thermal resistance,<br>case to heatsink per module||RthCS|Mounting surface flat, smooth and<br>greased|0.1|||
|Mounting torque ± 10 %|to heatsink||A mounting compound is recommended<br>and the torque should be rechecked after<br>a period of 3 hours to allow for the spread<br>of the compound.|4||Nm|
||busbar|||3|||
|Approximate weight||||75||g|
|||||2.7||oz.|
|Case style|||JEDEC®|AAP Gen 7 (TO-240AA)|||



##  **R CONDUCTION PER JUNCTION** 

|**R CONDUCTION PER JUNCTION**|**R CONDUCTION PER JUNCTION**|**R CONDUCTION PER JUNCTION**|**R CONDUCTION PER JUNCTION**|**R CONDUCTION PER JUNCTION**|**R CONDUCTION PER JUNCTION**|**R CONDUCTION PER JUNCTION**|**R CONDUCTION PER JUNCTION**|**R CONDUCTION PER JUNCTION**|**R CONDUCTION PER JUNCTION**|**R CONDUCTION PER JUNCTION**|**R CONDUCTION PER JUNCTION**|
|---|---|---|---|---|---|---|---|---|---|---|---|
|**DEVICES**|**SINE HALF WAVE CONDUCTION**|||||**RECTANGULAR WAVE CONDUCTION**|||||**UNITS**|
||**180°**|**120°**|**90°**|**60°**|**30°**|**180°**|**120°**|**90°**|**60°**|**30°**||
|VSK.41..|0.110|0.131|0.17|0.23|0.342|0.085|0.138|0.177|0.235|0.345|°C/W|
|VSK.56..|0.088|0.104|0.134|0.184|0.273|0.07|0.111|0.143|0.189|0.275||



## **Note** 

- Table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC 

Revision: 26-Jul-2018 

Document Number: 94630 

**3** 

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**VS-VSK.41.., VS-VSK.56.. Series** 

www.vishay.com 

**==> picture [59 x 48] intentionally omitted <==**

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130<br>VSK.41 Series<br>RthJC (DC) = 0.44°C/W<br>120<br>110<br>100<br>180°<br>120°<br>90 90°<br>60°<br>30°<br>80<br>0 10 20 30 40 50<br>Average on-state current (A)<br>Fig. 1 - Current Ratings Characteristics<br>130<br>VSK.41 Series<br>RthJC (DC) = 0.44 °C/W<br>120<br>110<br>100<br>DC<br>90 180°<br>120 °<br>90°<br>80<br>60°<br>30°<br>70<br>0 10 20 30 40 50 60 70 80<br>Average on-state current (A)<br>Fig. 2 - Current Ratings Characteristics<br>80<br>180°<br>70 120°<br>90°<br>60 60°<br>30°<br>50<br>RMS limit<br>40<br>30<br>20<br>10 VSK.41 Series<br>Per leg, Tj = 125°C<br>0<br>0 5 10 15 20 25 30 35 40 45 50<br>Average on-state current (A)<br>Maximum allowable case temperature (°C)<br>Maximum allowable case temperature (°C)<br>Maximum average on-state power loss (W)<br>**----- End of picture text -----**<br>


Fig. 3 - On-State Power Loss Characteristics 

## Vishay Semiconductors 

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**----- Start of picture text -----**<br>
120<br>180°<br>120°<br>100 90°<br>60°<br>80 30° DC<br>60 RMS limit<br>40<br>20<br>VSK.41 Series<br>Per leg, Tj = 125°C<br>0<br>0 10 20 30 40 50 60 70 80<br>Average on-state current (A)<br>Fig. 4 - On-State Power Loss Characteristics<br>800<br>At any rated load condition and with<br>rated Vrrm applied following surge<br>700 Initial Tj = Tj max<br>  @ 60  Hz 0.0083 s<br>@ 50 Hz 0.0100s<br>600<br>500<br>400<br>Per leg<br>300<br>1 10 100<br>Number of equal amplitude half cycle current pulses (N)<br>Fig. 5 - Maximum Non-Repetitive Surge Current<br>900<br>Maximum Non-repetitive Surge Current<br>800 Versus Pulse Train Duration. Control<br>of conduction may not be maintaned.<br>Initial Tj = 125°C<br>700<br>No Voltage Reapplied<br>Rated Vrrm reapplied<br>600<br>500<br>400<br>Per leg<br>300<br>0.01 0.1 1<br>Pulse train duration (s)<br>Maximum average on-state power loss (W)<br>Peak half sine wave on-state current (A)<br>Peak half sine wave on-state current (A)<br>**----- End of picture text -----**<br>


Fig. 6 - Maximum Non-Repetitive Surge Current 

Revision: 26-Jul-2018 

Document Number: 94630 

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For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**VS-VSK.41.., VS-VSK.56.. Series** 

Vishay Semiconductors 

www.vishay.com 

**==> picture [339 x 183] intentionally omitted <==**

**----- Start of picture text -----**<br>
160<br>RthSA = 0.1 °C/W<br>140 0.3 °C/W<br>180° 0.5 °C/W<br>120 po 120° NAN 0.7 °C/W<br>90° 1 °C/W<br>60° 1.5 °C/W<br>100<br>30° 2 °C/W<br>3 °C/W<br>80 5 °C/W<br>60<br>OO O7AKS\\\<br>40<br>VSK.41 Series<br>20 Per module<br>Tj = 125°C<br>0<br>0 20 40 60 80 1 0 0 20 40 60 80 100 120 140<br>Total RMS output current (A) Maximum allowable ambient temperature (°C)<br>Fig. 7 - On-State Power Loss Characteristics<br>Maximum total on-state power loss (W)<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
350<br>RthSA = 0.1 °C/W<br>180° 0.2 °C/W<br>300<br>pT (sine)  TN 0.3 °C/W<br>180° 0.5 °C/W<br>250 po (rect) SAKA XK 0.7 °C/W<br>1 °C/W<br>200 1.5 °C/W<br>∼<br>150<br>BH ZARX —<br>100<br>f/ RQd\<br>2 x VSK.41 Series<br>50 4 single phase bridge connected Kd<br>Tj = 125°C<br>eS<br>0 VA We|<br>0 20 40 60 80 1 0 0 20 40 60 80 100 120 140<br>Total output current (A) Maximum allowable ambient temperature (°C)<br>Fig. 8 - On-State Power Loss Characteristics<br>500<br>RthSA = 0.1 °C/W<br>0.2 °C/W<br>0.3 °C/W<br>400<br>0.5 °C/W<br>AN<br>0.7 °C/W<br>120° 1 °C/W<br>300 (rect)<br>200<br>T 4 ASA |<br>100 3 x VSK.41 Series<br>three phase bridge connected<br>Tj = 125°C<br>0 va SSS<br>0 20 40 60 80 100 120 1400 20 40 60 80 100 120 140<br>Total output current (A) Maximum allowable ambient temperature (°C)<br>Fig. 9 - On-State Power Loss Characteristics<br>Maximum total power loss (W)<br>Maximum total power loss (W)<br>**----- End of picture text -----**<br>


Revision: 26-Jul-2018 

Document Number: 94630 

**5** 

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**VS-VSK.41.., VS-VSK.56.. Series** 

www.vishay.com 

**==> picture [59 x 48] intentionally omitted <==**

**==> picture [179 x 587] intentionally omitted <==**

**----- Start of picture text -----**<br>
130<br>VSK.56 Series<br>RthJC (DC) = 0.35°C/W<br>120<br>110<br>100<br>180°<br>120°<br>90 90°<br>60°<br>30°<br>80<br>0 10 20 30 40 50 60 70<br>Average on-state current (A)<br>Fig. 10 - Current Ratings Characteristics<br>130<br>VSK.56 Series<br>RthJC (DC) = 0.35 °C/W<br>120<br>110<br>100<br>DC<br>90 180°<br>120°<br>90°<br>80<br>60°<br>30°<br>70<br>0 20 40 60 80 100<br>Average on-state current (A)<br>Fig. 11 - Current Ratings Characteristics<br>100<br>180°<br>120°<br>80 90 °<br>60°<br>30°<br>60<br>RMS limit<br>40<br>20<br>VSK.56 Series<br>Per leg,  Tj = 125°C<br>0<br>0 10 20 30 40 50 60 70<br>Average on-state current (A)<br>Maximum allowable case temperature (°C)<br>Maximum allowable case temperature (°C)<br>Maximum average on-state power loss (W)<br>**----- End of picture text -----**<br>


Fig. 12 - On-State Power Loss Characteristics 

## Vishay Semiconductors 

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**----- Start of picture text -----**<br>
140<br>180 °<br>120 12090°°<br>60°<br>100<br>30°<br>DC<br>80<br>RMS limit<br>60<br>40<br>20 VSK.56 Series<br>Per leg, Tj = 125 ° C<br>0<br>0 20 40 60 80 100<br>Average on-state current (A)<br>Fig. 13 - On-State Power Loss Characteristics<br>1100<br>At any rated load condition and with<br>1000 rated Vrrm applied following surge<br>Initial Tj = Tj max<br>  @ 60  Hz 0.0083 s<br>900<br>@ 50 Hz 0.0100s<br>800<br>700<br>600<br>500<br>Per leg<br>400<br>1 10 100<br>Number of equal amplitude half cycle current pulses (N)<br>Fig. 14 - Maximum Non-Repetitive Surge Current<br>1300<br>1200 Maximum Non-repetitive Surge Current<br>Versus Pulse Train Duration. Control<br>1100 of conduction may not be maintained.<br>Initial Tj = 125°C<br>1000 No Voltage Reapplied<br>Rated Vrrm reapplied<br>900<br>800<br>700<br>600<br>500 Per leg<br>400<br>0.01 0.1 1<br>Pulse train duration (s)<br>Maximum average on-state power loss (W)<br>Peak half sine wave on-state current (A)<br>Peak half sine wave on-state current (A)<br>**----- End of picture text -----**<br>


Fig. 15 - Maximum Non-Repetitive Surge Current 

Revision: 26-Jul-2018 

Document Number: 94630 

**6** 

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**VS-VSK.41.., VS-VSK.56.. Series** 

www.vishay.com 

## Vishay Semiconductors 

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**----- Start of picture text -----**<br>
250<br>RthSA = 0.1 °C/W<br>0.2 °C/W<br>180° 0.3 °C/W<br>200 120° 0.4 °C/W<br>90° 0.5 °C/W<br>60° 0.7 °C/W<br>150 30° 1  ° C/W<br>1.5 °C/W<br>2 °C/W<br>NG 4 °C/W<br>100<br>50 VSK.56 Series<br>f= Per module -3W\,_<br>Tj = 125°C<br>0 AS<br>0 20 40 60 80 100 120 1400 20 40 60 80 100 120 140<br>Total RMS output current (A) Maximum allowable ambient temperature (°C)<br>Fig. 16 - On-State Power Loss Characteristics<br>600<br>RthSA = 0.1 °C/W<br>0.2 °C/W<br>500 180° 0.3 °C/W<br>OTE (sine) 0.5 °C/W<br>180° 0.7 °C/W<br>400 (rect) 1 °C/W<br>2 °C/W<br>300 ∼<br>PAN<br>200<br>ARYA<br>100 2 x VSK.56 Series<br>single phase bridge connected<br>Tj = 125°C<br>_—7 ES S S<br>0 _ |<br>0 20 40 60 80 100 120 1400 20 40 60 80 100 120 140<br>Total output current (A) Maximum allowable ambient temperature (°C)<br>Fig. 17 - On-State Power Loss Characteristics<br>700<br>600 aa i RthSA = 0.1 °C/W0.2 °C/W<br>0.3 °C/W<br>0.5 °C/W<br>500 =H HN 0.7 °C/W<br>120°<br>1 °C/W<br>(rect)<br>400<br>300<br>200 pLpL RA<br>eS AA<br>3 x VSK.56 Series<br>100 three phase bridge connected<br>Tj = 125°C<br>0 aa SS<br>0 20 40 60 80 100 120 140 160 1800 20 40 60 80 100 120 140<br>Total output current (A) Maximum allowable ambient temperature (°C)<br>Fig. 18 - On-State Power Loss Characteristics<br>Maximum total on-state power loss (W)<br>Maximum total power loss (W)<br>Maximum total power loss (W)<br>**----- End of picture text -----**<br>


Revision: 26-Jul-2018 

Document Number: 94630 

**7** 

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**VS-VSK.41.., VS-VSK.56.. Series** 

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www.vishay.com 

## Vishay Semiconductors 

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**----- Start of picture text -----**<br>
1000 1000<br>VSK. 41 Series VSK. 56 Series<br>Per leg Per leg<br>100 100<br>10 10<br>Tj = 125°C Tj = 125°C<br>Tj = 25°C Tj = 25°C<br>1 1<br>0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0<br>Instantaneous on-state voltage (V) Instantaneous on-state voltage (V)<br>Instantaneous on-state current (A) Instantaneous on-state current (A)<br>**----- End of picture text -----**<br>


Fig. 19 - On-State Voltage Drop Characteristics 

Fig. 20 - On-State Voltage Drop Characteristics 

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1<br>Steady state value<br>RthJC = 0.44 °C/W<br>RthJC = 0.35 °C/W<br>(DC operation)<br>0.1 VSK.41 Series<br>VSK.56 Series<br>Per leg<br>0.01<br>0.001 0.01 0.1 1 10<br>Square wave pulse duration (s)<br>Fig. 21 - Thermal Impedance ZthJC Characteristics<br>100<br>Rectangular gate pulse (1) PGM = 100 W, tp = 500 µs<br>a)Recommended load line for<br>rated di/ dt: 20 V, 30 ohms (2) PGM = 50 W, tp = 1 ms<br>tr = 0.5 µs, tp >= 6 µs  (3) PGM = 20 W, tp = 25 ms<br>b)Recommended load line for (4) PGM = 10 W, tp = 5 ms<br><= 30% rated di/ dt: 20 V, 65 ohms<br>10 tr = 1 µs, tp >= 6 µs<br>(a)<br>(b)<br>1<br>(4) (3) (2) (1)<br>VGD<br>IGD<br>VSK.IRK.41../.56.. Series Frequency Limited by PG(AV)<br>0.1<br>0.001 0.01 0.1 1 10 100 1000<br>Instantaneous gate current (A)<br>Fig. 22 - Gate Characteristics<br> (°C/W)<br>thJC<br>Transient thermal impedance Z<br>TJ<br>=<br>TJ = -40 °C<br> 125 C ° TJ = 25 °C<br>Instantaneous gate voltage (V)<br>**----- End of picture text -----**<br>


Revision: 26-Jul-2018 

Document Number: 94630 

**8** 

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**VS-VSK.41.., VS-VSK.56.. Series** 

**==> picture [59 x 48] intentionally omitted <==**

www.vishay.com 

## Vishay Semiconductors 

## **ORDERING INFORMATION TABLE** 

|**RMATION TABLE**|**RMATION TABLE**|**RMATION TABLE**|
|---|---|---|
|**2**<br>-<br>Module type<br>**1**<br>-<br>Vishay Semiconductors product<br>**3**<br>-<br>Circuit configuration (see Circuit configuration table)<br>**4**<br>-<br>Current code<br>**5**<br>-<br>Voltage code (see Voltage Ratings table)<br>**Device code**<br>2<br>1<br>4<br>3<br>5<br>**K**<br>**VS-VS**<br>**T**<br>**56**<br>**/**<br>**16**<br>41 = 45 A<br>56 = 60 A|||
||(see Voltage Ratings table)<br>4<br>5|1 = 45 A<br>6 = 60 A|



## **Note** 

- To order the optional hardware go to www.vishay.com/doc?95172 

|**CIRCUIT CONFIGURATION**|**CIRCUIT CONFIGURATION**|**CIRCUIT CONFIGURATION**|**CIRCUIT CONFIGURATION**|||
|---|---|---|---|---|---|
|**CIRCUIT DESCRIPTION**|**CIRCUIT CONFIGURATION CODE**|||**CIRCUIT DRAWING**||
|Two SCRs doubler circuit|T|||**VSKT**<br>**1**<br>**4**<br>**5**|**+**<br>**-**<br>**K1**<br>**(5)**<br>**K2**<br>**(7)**<br>**G2**<br>**(6)**<br>**G1**<br>**(4)**<br>**~**<br>**(1)**<br>**(2)**<br>**(3)**<br>**2**<br>**3**<br>**7**<br>**6**|
|SCR/diode doubler circuit, positive<br>control|H|||**VSKH**<br>**1**<br>**4**<br>**5**|**+**<br>**-**<br>**K1**<br>**(5)**<br>**G1**<br>**(4)**<br>**~**<br>**(1)**<br>**(2)**<br>**(3)**<br>**2**<br>**3**|
|SCR/diode doubler circuit, negative<br>control|L|||**VSKL**<br>**1**|**+**<br>**-**<br>**K2**<br>**(7)**<br>**G2**<br>**(6)**<br>**~**<br>**(1)**<br>**(2)**<br>**(3)**<br>**2**<br>**3**<br>**7**<br>**6**|
|SCR/diode common anodes|N|||**VSKN**<br>**1**<br>**4**<br>**5**|**+**<br>**+**<br>**K1**<br>**(5)**<br>**G1**<br>**(4)**<br>**-**<br>**(1)**<br>**(2)**<br>**(3)**<br>**2**<br>**3**|
|||||||
|**LINKS TO RELATED DOCUMENTS**||||||
|Dimensions||||www.vishay.com/doc?95368||



Document Number: 94630 

Revision: 26-Jul-2018 

**9** 

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**Outline Dimensions** 

Vishay Semiconductors 

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## **ADD-A-PAK Generation VII - Thyristor** 

## **DIMENSIONS** in millimeters (inches) 

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Fast-on tab 2.8 x 0.8 (0.110 x 0.03)<br>Viti M5 x 0.8<br>15.5 ± 0.5<br>Screws M5 x 0.8<br>(0.6 ± 0.020)<br>18 (0.7) REF.<br>80 ± 0.3 (3.15 ± 0.012)<br>15 ± 0.5 (0.59 ± 0.020)<br>20 ± 0.5 (0.79 ± 0.020)<br>20 ± 0.5 (0.79 ± 0.020)<br>92 ± 0.75 (3.6 ± 0.030)<br>6.7 ± 0.3 (0.26 ± 0.012)<br>35 REF.<br>30 ± 0.5 29 ± 0.5<br>(1 ± 0.020) 24 ± 0.5<br>(1.18 ± 0.020) (1 ± 0.020)<br>30 ± 1 (1.18 ± 0.039)<br>2 3 6<br>7<br>5<br>22.6 ± 0.2 1 4<br>(0.89 ± 0.008)<br>4 ± 0.2 (0.157 ± 0.008)<br>6.3 ± 0.2 (0.248 ± 0.008) 5.8 ± 0.25 (0.228 ± 0.010)<br>**----- End of picture text -----**<br>


For technical questions, contact: indmodules@vishay.com 

www.vishay.com 1 

Document Number: 95368 Revision: 11-Nov-08 

**Legal Disclaimer Notice** Vishay 

www.vishay.com 

**==> picture [59 x 48] intentionally omitted <==**

## **Disclaimer** 

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 

Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product.  To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. 

Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications.  Such statements are not binding statements about the suitability of products for a particular application.  It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time.  All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts.  Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. 

Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. 

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay.  Product names and markings noted herein may be trademarks of their respective owners. 

_**© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED**_ 

Revision: 08-Feb-17 

Document Number: 91000 

**1**

Updated at June 7, 2026

Vishay is a global leader in the manufacturing of discrete semiconductors and passive electronic components. Renowned for its exceptional quality and engineering expertise, the company produces highly reliable solutions that drive innovation across the industrial, automotive, telecommunications, and consumer electronics markets. From advanced factory automation to vehicle electrification, Vishay components provide the foundational building blocks for modern electronic design. The company's expansive portfolio is heavily focused on efficient power management, signal routing, and energy storage. Within its passive component lineup, Vishay is recognized for its extensive array of high-performance capacitors, including robust aluminium electrolytic, film, and polymer variants, alongside highly efficient power inductors. In the realm of discrete semiconductors, Vishay is a premier manufacturer of single and dual MOSFETs, as well as a vast selection of Schottky, Zener, and fast-recovery rectifier diodes designed for demanding power applications. Furthermore, Vishay delivers industry-leading circuit protection and thermal management solutions. With a broad offering of transient voltage suppressors (TVS diodes) and temperature-sensing NTC thermistors, these components are engineered to safeguard sensitive circuitry against both electrical and thermal overstress. By combining this vital mix of advanced discretes and passives, Vishay enables engineers to develop robust, space-saving, and highly resilient electronic systems.

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