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VS-MURB2020CTPBF
Fast / Ultrafast Diode, 200 V, 10 A, Single, 850 mV, 35 ns, 100 A
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- Manufacturer: VISHAY
- Product type: Fast & Ultrafast Recovery Rectifier Diodes
- No. of Pins: 2 Pin
- Product Range: VS-MU
- Diode Case Style: TO-263 (D2PAK)
- Diode Configuration: Single
- Forward Voltage Max: 850mV
- Forward Surge Current: 100A
- Reverse Recovery Time: 35ns
- Average Forward Current: 10A
- Operating Temperature Max: 175°C
- Repetitive Peak Reverse Voltage: 200V
| Delivery and price | |
|---|---|
| Units per pack | 5000 |
| Price | 0.518 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
**VS-MURB2020CTPbF, VS-MURB2020CT-1PbF** www.vishay.com Vishay Semiconductors ## **Ultrafast Rectifier, 2 x 10 A FRED Pt[®]** ## **FEATURES** - Ultrafast recovery time - Low forward voltage drop - Low leakage current - 175 °C operating junction temperature **TO-263AB (D[[2]] PAK)** **==> picture [191 x 106] intentionally omitted <==** **----- Start of picture text -----**<br> TO-263AB (D [[2]] PAK) TO-262AA<br>Base Base<br>common common<br>cathode cathode<br>2 2<br>1 2 3 1 2 3<br>Anode Anode Anode Anode<br>1 Common 2 1 Common 2<br>cathode cathode<br>**----- End of picture text -----**<br> **VS-MURB2020CTPbF VS-MURB2020CT-1PbF** ## **PRODUCT SUMMARY** |**PRODUCT SUMMARY**|**PRODUCT SUMMARY**| |---|---| |Package|TO-263AB (D2PAK), TO-262AA| |IF(AV)|2 x 10 A| |VR|200 V| |VFat IF|0.85 V| |trr|35 ns| |TJmax.|175 °C| |Diode variation|Common cathode| - Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C - AEC-Q101 qualified - Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 ## **DESCRIPTION / APPLICATIONS** MUR.. series are the state of the art ultrafast recovery rectifiers specifically designed with optimized performance of forward voltage drop and ultrafast recovery time. The planar structure and the platinum doped life time control, guarantee the best overall performance, ruggedness and reliability characteristics. These devices are intended for use in the output rectification stage of SMPS, UPS, DC/DC converters as well as freewheeling diode in low voltage inverters and chopper motor drives. Their extremely optimized stored charge and low recovery current minimize the switching losses and reduce over dissipation in the switching element and snubbers. ## **ABSOLUTE MAXIMUM RATINGS** |**ABSOLUTE MAXIMUM RATINGS**|**ABSOLUTE MAXIMUM RATINGS**|**ABSOLUTE MAXIMUM RATINGS**|**ABSOLUTE MAXIMUM RATINGS**|**ABSOLUTE MAXIMUM RATINGS**| |---|---|---|---|---| |**PARAMETER**|**SYMBOL**|**TEST CONDITIONS**|**MAX.**|**UNITS**| |Peak repetitive reverse voltage|VRRM||200|V| |Average rectified forward current<br>per leg<br>total device|IF(AV)||10|A| |||Rated VR, TC= 145 °C|20|| |Non-repetitive peak surge current per leg|IFSM||100|| |Peak repetitive forward current per leg|IFM|Rated VR, square wave, 20 kHz, TC= 145 °C|20|| |Operatingjunction and storage temperatures|TJ, TStg||-65 to +175|°C| ~~|~~ **ELECTRICAL SPECIFICATIONS** (TJ = 25 °C unless otherwise specified) **PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS** ~~eG~~ Breakdown voltage, VBR, IR = 100 μA 200 - - ~~$=~~ blocking voltage VR ~~—~~ IF = 8 A, TJ = 125 °C - - 0.85 V Forward voltage VF IF = 16 A - - 1.15 ~~a Be~~ IF = 16 A, TJ = 125 °C - - 1.05 ~~a~~ VR = VR rated - - 15 Reverse leakage current IR TJ = 150 °C, VR = VR rated - - 250 μA ~~CO~~ Junction capacitance CT VR = 200 V - 55 - pF ~~GO~~ Series inductance LS Measured lead to lead 5 mm from package body - 8.0 - nH Revision: 10-Jul-15 **1** For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Document Number: 94083 **==> picture [59 x 48] intentionally omitted <==** www.vishay.com ## **VS-MURB2020CTPbF, VS-MURB2020CT-1PbF** ## Vishay Semiconductors |**DYNAMIC RECOVERY CHARACTERISTICS**(TJ= 25 °C unless otherwise specified)|**DYNAMIC RECOVERY CHARACTERISTICS**(TJ= 25 °C unless otherwise specified)|**DYNAMIC RECOVERY CHARACTERISTICS**(TJ= 25 °C unless otherwise specified)|**DYNAMIC RECOVERY CHARACTERISTICS**(TJ= 25 °C unless otherwise specified)|**DYNAMIC RECOVERY CHARACTERISTICS**(TJ= 25 °C unless otherwise specified)|**DYNAMIC RECOVERY CHARACTERISTICS**(TJ= 25 °C unless otherwise specified)|**DYNAMIC RECOVERY CHARACTERISTICS**(TJ= 25 °C unless otherwise specified)|**DYNAMIC RECOVERY CHARACTERISTICS**(TJ= 25 °C unless otherwise specified)| |---|---|---|---|---|---|---|---| |**PARAMETER**|**SYMBOL**|**TEST CONDITIONS**||**MIN.**|**TYP.**|**MAX.**|**UNITS**| |Reverse recovery time|trr|IF= 1.0 A, dIF/dt = 50 A/μs, VR= 30 V||-|-|35|ns| |||IF= 1.0 A, dIF/dt = 100 A/μs, VR= 30 V||-|19|-|| |||TJ= 25 °C|IF= 10 A<br>dIF/dt = 200 A/μs<br>VR= 160 V|-|21|-|| |||TJ= 125 °C||-|35|-|| |Peak recovery current|IRRM|TJ= 25 °C||-|1.9|-|A| |||TJ= 125 °C||-|4.8|-|| |Reverse recovery charge|Qrr|TJ= 25 °C||-|25|-|nC| |||TJ= 125 °C||-|78|-|| ## **THERMAL - MECHANICAL SPECIFICATIONS** |**THERMAL - MECHANICAL SPECIFICATIONS**|**THERMAL - MECHANICAL SPECIFICATIONS**|**THERMAL - MECHANICAL SPECIFICATIONS**|**THERMAL - MECHANICAL SPECIFICATIONS**|**THERMAL - MECHANICAL SPECIFICATIONS**|**THERMAL - MECHANICAL SPECIFICATIONS**|**THERMAL - MECHANICAL SPECIFICATIONS**| |---|---|---|---|---|---|---| |**PARAMETER**|**SYMBOL**|**TEST CONDITIONS**|**MIN.**|**TYP.**|**MAX.**|**UNITS**| |Maximum junction and<br>storage temperature range|TJ, TStg||-65|-|175|°C| |Thermal resistance,<br>junction to case per leg|RthJC||-|-|2.5|°C/W| |Thermal resistance,<br>junction to ambient per leg|RthJA||-|-|50|| |Thermal resistance,<br>case to heatsink|RthCS|Mounting surface, flat, smooth and<br>greased|-|0.5|-|| |Weight|||-|2.0|-|g| ||||-|0.07|-|oz.| |Mounting torque|||6.0<br>(5.0)|-|12<br>(10)|kgf · cm<br>(lbf · in)| |Marking device||Case style TO-263AB (D2PAK)|MURB2020CT|||| |||Case style TO-262AA|MURB2020CT-1|||| Revision: 10-Jul-15 Document Number: 94083 **2** For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **VS-MURB2020CTPbF, VS-MURB2020CT-1PbF** **==> picture [59 x 48] intentionally omitted <==** www.vishay.com ## Vishay Semiconductors **==> picture [470 x 189] intentionally omitted <==** **----- Start of picture text -----**<br> 100 100<br>TJ = 175 ° C<br>10 TJ = 150 °C<br>10<br>TJ = 175 ° C 1 TJ = 125 °C<br>TT JJ = 125 °C = 25 °C T J = 100 °C<br>0.1<br>1<br>0.01<br>TJ = 25 °C<br>0.1 0.001<br>0 0.4 0.8 1.2 1.6 2.0 0 50 100 150 200 250<br>94083_01 VF - Forward Voltage Drop (V) 94083_02 VR - Reverse Voltage (V)<br>Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs.<br>Reverse Voltage<br> - Reverse Current (μA)<br>IR<br> - Instantaneous Forward Current (A)<br>IF<br>**----- End of picture text -----**<br> **==> picture [206 x 166] intentionally omitted <==** **----- Start of picture text -----**<br> 1000<br>100<br>TJ = 25 °C<br>10<br>1 10 100 1000<br>94083_03 VR - Reverse Voltage (V)<br> - Junction Capacitance (pF)<br>T<br>C<br>**----- End of picture text -----**<br> Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage **==> picture [406 x 166] intentionally omitted <==** **----- Start of picture text -----**<br> 10<br>1<br>P DM<br>D = 0.50 t 1<br>0.1 D D = 0.10 = 0.20 t2<br>Single pulse D = 0.05 Notes:<br>(thermal resistance) D = 0.02 1. Duty factor D = t 1 /t 2<br>D = 0.01 2. Peak T J = P DM x Z thJC + T C<br>0.01<br>0.00001 0.0001 0.001 0.01 0.1 1<br>94083_04 t1 - Rectangular Pulse Duration (s)<br> - Thermal Impedance (°C/W)<br>thJC<br>Z<br>**----- End of picture text -----**<br> Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics Revision: 10-Jul-15 Document Number: 94083 **3** For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **VS-MURB2020CTPbF, VS-MURB2020CT-1PbF** **==> picture [59 x 48] intentionally omitted <==** www.vishay.com **==> picture [202 x 167] intentionally omitted <==** **----- Start of picture text -----**<br> 180<br>170<br>160<br>DC<br>150 Square wave (D = 0.50)<br>Rated VR applied<br>140<br>See note (1)<br>130<br>0 3 6 9 12 15<br>94083_05 IF(AV) - Average Forward Current (A)<br>Allowable Case Temperature (°C)<br>**----- End of picture text -----**<br> Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current **==> picture [202 x 180] intentionally omitted <==** **----- Start of picture text -----**<br> 15<br>12<br>RMS limit<br>9<br>D = 0.01<br>D = 0.02<br>6 D = 0.05<br>D = 0.10<br>D = 0.20<br>3<br>DC D = 0.50<br>0<br>0 3 6 9 12 15<br>94083_06 IF(AV) - Average Forward Current (A)<br>Fig. 6 - Forward Power Loss Characteristics<br>Average Power Loss (W)<br>**----- End of picture text -----**<br> ## Vishay Semiconductors **==> picture [205 x 167] intentionally omitted <==** **----- Start of picture text -----**<br> 50<br>V R = 160 V<br>TJ = 125 °C<br>40 T J = 25 °C<br>30<br>20<br>10 I F = 20 A<br>IF = 10 A<br>I F = 5 A<br>0<br>100 1000<br>94083_07 dIF/dt (A/μs)<br> (ns)<br>trr<br>**----- End of picture text -----**<br> Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt **==> picture [205 x 180] intentionally omitted <==** **----- Start of picture text -----**<br> 250<br>VR = 160 V<br>TJ = 125 °C<br>200 T J = 25 ° C<br>IF = 20 A<br>IF = 10 A<br>150 I F = 5 A<br>100<br>50<br>0<br>100 1000<br>94083_08 dIF/dt (A/μs)<br>Fig. 8 - Typical Stored Charge vs. dIF/dt<br> (nC)<br>rr<br>Q<br>**----- End of picture text -----**<br> ## **Note** > (1) Formula used: TC = TJ - (Pd + PdREV) x RthJC; Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = Rated VR Revision: 10-Jul-15 Document Number: 94083 **4** For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **==> picture [59 x 48] intentionally omitted <==** www.vishay.com ## **VS-MURB2020CTPbF, VS-MURB2020CT-1PbF** ## Vishay Semiconductors **==> picture [240 x 135] intentionally omitted <==** **----- Start of picture text -----**<br> VR = 200 V<br>0.01 Ω<br>L = 70 μH<br>D.U.T.<br>D<br>dIF/dt<br>adjust<br>G IRFP250<br>S<br>**----- End of picture text -----**<br> Fig. 9 - Reverse Recovery Parameter Test Circuit **==> picture [274 x 221] intentionally omitted <==** **----- Start of picture text -----**<br> (3)<br>IF trr<br>ta tb<br>0<br>(4)<br>Qrr<br>(2)<br>IRRM 0.5 IRRM<br>dI(rec)M/dt (5)<br>0.75 IRRM<br>(1) dIF/dt<br>(1) dIF/dt - rate of change of current (4) Qrr - area under curve defined by trr<br> through zero crossing and IRRM<br>(2) IRRM - peak reverse recovery current Qrr = t 2rr x IRRM<br>(3) t from zero crossing point of negative rr - reverse recovery time measured (5) dI(rec)M/dt - peak rate of change of<br> going IF to point where a line passing current during tb portion of trr<br> through 0.75 IRRM and 0.50 IRRM<br> extrapolated to zero current.<br>**----- End of picture text -----**<br> Fig. 10 - Reverse Recovery Waveform and Definitions Revision: 10-Jul-15 Document Number: 94083 **5** For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **==> picture [59 x 48] intentionally omitted <==** www.vishay.com ## **VS-MURB2020CTPbF, VS-MURB2020CT-1PbF** ## Vishay Semiconductors ## **ORDERING INFORMATION TABLE** |**2**<br>-<br>Ultrafast MUR series<br>**3**<br>-<br>B = D2PAK/TO-262<br>**4**<br>-<br>Current rating (20 = 20 A)<br>**5**<br>-<br>Voltage rating (20 = 200 V)<br>**6**<br>-<br>CT = center tap (dual) TO-220/D2PAK/TO-262<br>**7**<br>-<br>-1 = TO-262<br>None = D2PAK<br>**8**<br>-<br>None = tube (50 pieces)<br>TRL = tape and reel (left oriented, for D2PAK package)<br>**9**<br>-<br>PbF = lead (Pb)-free<br>P = lead (Pb)-free (for D2PAK TRR and TRL)<br>TRR = tape and reel (right oriented, for D2PAK package)<br>**Device code**<br>5<br>1<br>3<br>2<br>4<br>6<br>7<br>8<br>9<br>**VS-**<br>**MUR**<br>**B**<br>**20**<br>**20**<br>**CT**<br>**-1**<br>**TRL**<br>**PbF**<br>**1**<br>-<br>Vishay Semiconductors product|**2**<br>-<br>Ultrafast MUR series<br>**3**<br>-<br>B = D2PAK/TO-262<br>**4**<br>-<br>Current rating (20 = 20 A)<br>**5**<br>-<br>Voltage rating (20 = 200 V)<br>**6**<br>-<br>CT = center tap (dual) TO-220/D2PAK/TO-262<br>**7**<br>-<br>-1 = TO-262<br>None = D2PAK<br>**8**<br>-<br>None = tube (50 pieces)<br>TRL = tape and reel (left oriented, for D2PAK package)<br>**9**<br>-<br>PbF = lead (Pb)-free<br>P = lead (Pb)-free (for D2PAK TRR and TRL)<br>TRR = tape and reel (right oriented, for D2PAK package)<br>**Device code**<br>5<br>1<br>3<br>2<br>4<br>6<br>7<br>8<br>9<br>**VS-**<br>**MUR**<br>**B**<br>**20**<br>**20**<br>**CT**<br>**-1**<br>**TRL**<br>**PbF**<br>**1**<br>-<br>Vishay Semiconductors product|**2**<br>-<br>Ultrafast MUR series<br>**3**<br>-<br>B = D2PAK/TO-262<br>**4**<br>-<br>Current rating (20 = 20 A)<br>**5**<br>-<br>Voltage rating (20 = 200 V)<br>**6**<br>-<br>CT = center tap (dual) TO-220/D2PAK/TO-262<br>**7**<br>-<br>-1 = TO-262<br>None = D2PAK<br>**8**<br>-<br>None = tube (50 pieces)<br>TRL = tape and reel (left oriented, for D2PAK package)<br>**9**<br>-<br>PbF = lead (Pb)-free<br>P = lead (Pb)-free (for D2PAK TRR and TRL)<br>TRR = tape and reel (right oriented, for D2PAK package)<br>**Device code**<br>5<br>1<br>3<br>2<br>4<br>6<br>7<br>8<br>9<br>**VS-**<br>**MUR**<br>**B**<br>**20**<br>**20**<br>**CT**<br>**-1**<br>**TRL**<br>**PbF**<br>**1**<br>-<br>Vishay Semiconductors product| |---|---|---| |**LINKS TO RELATED DOCUMENTS**||| |Dimensions||www.vishay.com/doc?95014| |Part marking information||www.vishay.com/doc?95008| |Packaging information||www.vishay.com/doc?95032| |SPICE model||www.vishay.com/doc?95622| Revision: 10-Jul-15 Document Number: 94083 **6** For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **Outline Dimensions** **==> picture [59 x 48] intentionally omitted <==** Vishay High Power Products ## **D[2] PAK, TO-262** ## **DIMENSIONS FOR D[2] PAK** in millimeters and inches **==> picture [496 x 321] intentionally omitted <==** **----- Start of picture text -----**<br> Conforms to JEDEC outline D [2] PAK (SMD-220) B<br>A Pad layout<br>(2)(3) A c2 (E) 11.00<br>E MIN.<br>(0.43)<br>A<br>(3) L1 4<br>9.65<br>MIN.<br>(0.38)<br>(D1) (3)<br>Detail A<br>D 17.90 (0.70)<br>H 15.00 (0.625)<br>(2)<br>1 2 3<br>3.81<br>MIN.<br>L2 (0.15)<br>B B 2.32<br>MIN.<br>(0.08)<br>A<br>E1 (3) 2.64 (0.103)<br>2 x b2 C 2.41 (0.096)<br>c<br>View A - A<br>2 x b<br>0.010 M A M B ± 0.004 M B Plating (4) BaseMetal<br>2 x e H b1, b3<br>Gauge<br>plane<br>(c) c1 (4)<br>0° to 8° B<br>Seating<br>Lead assignments plane<br>Diodes Lead tip L3 L A1 (b, b2)<br>1. - Anode (two die)/open (one die) L4 Section B - B and C - C<br>2., 4. - Cathode Detail “A” Scale: None<br>3. - Anode Rotated 90 °CW<br>Scale: 8:1<br>**----- End of picture text -----**<br> |**SYMBOL**|**MILLIMETERS**|**MILLIMETERS**|**INCHES**<br>**MIN.**<br>**MAX.**|**INCHES**<br>**MIN.**<br>**MAX.**|**NOTES**||**SYMBOL**|**MILLIMETERS**|**MILLIMETERS**|**INCHES**|**INCHES**|**NOTES**| |---|---|---|---|---|---|---|---|---|---|---|---|---| ||**MIN.**|**MAX.**|**MIN.**|||||**MIN.**|**MAX.**|**MIN.**|**MAX.**|| |A|4.06|4.83|0.160|0.190|||D1|6.86|8.00|0.270|0.315|3| |A1|0.00|0.254|0.000|0.010|||E|9.65|10.67|0.380|0.420|2, 3| |b|0.51|0.99|0.020|0.039|||E1|7.90|8.80|0.311|0.346|3| |b1|0.51|0.89|0.020|0.035|4||e|2.54 BSC||0.100 BSC||| |b2|1.14|1.78|0.045|0.070|||H|14.61|15.88|0.575|0.625|| |b3|1.14|1.73|0.045|0.068|4||L|1.78|2.79|0.070|0.110|| |c|0.38|0.74|0.015|0.029|||L1|-|1.65|-|0.066|3| |c1|0.38|0.58|0.015|0.023|4||L2|1.27|1.78|0.050|0.070|| |c2|1.14|1.65|0.045|0.065|||L3|0.25 BSC||0.010 BSC||| |D|8.51|9.65|0.335|0.380|2||L4|4.78|5.28|0.188|0.208|| ## **Notes** - (1) Dimensioning and tolerancing per ASME Y14.5 M-1994 - (7) Outline conforms to JEDEC outline TO-263AB - (2) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outmost extremes of the plastic body - (3) Thermal pad contour optional within dimension E, L1, D1 and E1 - (4) Dimension b1 and c1 apply to base metal only - (5) Datum A and B to be determined at datum plane H - (6) Controlling dimension: inch Document Number: 95014 For technical questions concerning discrete products, contact: diodes-tech@vishay.com Revision: 31-Mar-09 For technical questions concerning module products, contact: ind-modules@vishay.com www.vishay.com 1 **Outline Dimensions** ## Vishay High Power Products ## D[2] PAK, TO-262 **==> picture [59 x 48] intentionally omitted <==** ## **DIMENSIONS FOR TO-262** in millimeters and inches ||(4)<br>(4)<br>Base<br>metal<br>Plating<br>b1, b3<br>~~(~~b, b2)<br>c1<br>c<br>Section B - B and C - C<br>Scale: None<br>Section A - A<br>(3)<br>E1<br>(3)<br>D1<br>E<br>B<br>A<br>A<br>A<br>c2<br>c<br>A1<br>Seating<br>plane<br>Lead tip<br>(3)<br>(2) (3)<br>(2)<br>A<br>E<br>(Datum A)<br>L1<br>L2<br>B<br>B<br>C<br>C<br>3<br>2<br>1<br>L<br>D<br>2 x e<br>3 x b2<br>3 x b<br>0.010<br>A<br>B<br>M<br>M<br>**Modified JEDEC outline TO-262**<br>**Lead assignments**<br>Diodes<br>1. - Anode (two die)/open (one die)<br>2., 4. - Cathode<br>3. - Anode|(4)<br>(4)<br>Base<br>metal<br>Plating<br>b1, b3<br>~~(~~b, b2)<br>c1<br>c<br>Section B - B and C - C<br>Scale: None<br>Section A - A<br>(3)<br>E1<br>(3)<br>D1<br>E<br>B<br>A<br>A<br>A<br>c2<br>c<br>A1<br>Seating<br>plane<br>Lead tip<br>(3)<br>(2) (3)<br>(2)<br>A<br>E<br>(Datum A)<br>L1<br>L2<br>B<br>B<br>C<br>C<br>3<br>2<br>1<br>L<br>D<br>2 x e<br>3 x b2<br>3 x b<br>0.010<br>A<br>B<br>M<br>M<br>**Modified JEDEC outline TO-262**<br>**Lead assignments**<br>Diodes<br>1. - Anode (two die)/open (one die)<br>2., 4. - Cathode<br>3. - Anode|(4)<br>(4)<br>Base<br>metal<br>Plating<br>b1, b3<br>~~(~~b, b2)<br>c1<br>c<br>Section B - B and C - C<br>Scale: None<br>Section A - A<br>(3)<br>E1<br>(3)<br>D1<br>E<br>B<br>A<br>A<br>A<br>c2<br>c<br>A1<br>Seating<br>plane<br>Lead tip<br>(3)<br>(2) (3)<br>(2)<br>A<br>E<br>(Datum A)<br>L1<br>L2<br>B<br>B<br>C<br>C<br>3<br>2<br>1<br>L<br>D<br>2 x e<br>3 x b2<br>3 x b<br>0.010<br>A<br>B<br>M<br>M<br>**Modified JEDEC outline TO-262**<br>**Lead assignments**<br>Diodes<br>1. - Anode (two die)/open (one die)<br>2., 4. - Cathode<br>3. - Anode|(4)<br>(4)<br>Base<br>metal<br>Plating<br>b1, b3<br>~~(~~b, b2)<br>c1<br>c<br>Section B - B and C - C<br>Scale: None<br>Section A - A<br>(3)<br>E1<br>(3)<br>D1<br>E<br>B<br>A<br>A<br>A<br>c2<br>c<br>A1<br>Seating<br>plane<br>Lead tip<br>(3)<br>(2) (3)<br>(2)<br>A<br>E<br>(Datum A)<br>L1<br>L2<br>B<br>B<br>C<br>C<br>3<br>2<br>1<br>L<br>D<br>2 x e<br>3 x b2<br>3 x b<br>0.010<br>A<br>B<br>M<br>M<br>**Modified JEDEC outline TO-262**<br>**Lead assignments**<br>Diodes<br>1. - Anode (two die)/open (one die)<br>2., 4. - Cathode<br>3. - Anode|(4)<br>(4)<br>Base<br>metal<br>Plating<br>b1, b3<br>~~(~~b, b2)<br>c1<br>c<br>Section B - B and C - C<br>Scale: None<br>Section A - A<br>(3)<br>E1<br>(3)<br>D1<br>E<br>B<br>A<br>A<br>A<br>c2<br>c<br>A1<br>Seating<br>plane<br>Lead tip<br>(3)<br>(2) (3)<br>(2)<br>A<br>E<br>(Datum A)<br>L1<br>L2<br>B<br>B<br>C<br>C<br>3<br>2<br>1<br>L<br>D<br>2 x e<br>3 x b2<br>3 x b<br>0.010<br>A<br>B<br>M<br>M<br>**Modified JEDEC outline TO-262**<br>**Lead assignments**<br>Diodes<br>1. - Anode (two die)/open (one die)<br>2., 4. - Cathode<br>3. - Anode|(4)<br>(4)<br>Base<br>metal<br>Plating<br>b1, b3<br>~~(~~b, b2)<br>c1<br>c<br>Section B - B and C - C<br>Scale: None<br>Section A - A<br>(3)<br>E1<br>(3)<br>D1<br>E<br>B<br>A<br>A<br>A<br>c2<br>c<br>A1<br>Seating<br>plane<br>Lead tip<br>(3)<br>(2) (3)<br>(2)<br>A<br>E<br>(Datum A)<br>L1<br>L2<br>B<br>B<br>C<br>C<br>3<br>2<br>1<br>L<br>D<br>2 x e<br>3 x b2<br>3 x b<br>0.010<br>A<br>B<br>M<br>M<br>**Modified JEDEC outline TO-262**<br>**Lead assignments**<br>Diodes<br>1. - Anode (two die)/open (one die)<br>2., 4. - Cathode<br>3. - Anode|(4)<br>(4)<br>Base<br>metal<br>Plating<br>b1, b3<br>~~(~~b, b2)<br>c1<br>c<br>Section B - B and C - C<br>Scale: None<br>Section A - A<br>(3)<br>E1<br>(3)<br>D1<br>E<br>B<br>A<br>A<br>A<br>c2<br>c<br>A1<br>Seating<br>plane<br>Lead tip<br>(3)<br>(2) (3)<br>(2)<br>A<br>E<br>(Datum A)<br>L1<br>L2<br>B<br>B<br>C<br>C<br>3<br>2<br>1<br>L<br>D<br>2 x e<br>3 x b2<br>3 x b<br>0.010<br>A<br>B<br>M<br>M<br>**Modified JEDEC outline TO-262**<br>**Lead assignments**<br>Diodes<br>1. - Anode (two die)/open (one die)<br>2., 4. - Cathode<br>3. - Anode|(4)<br>(4)<br>Base<br>metal<br>Plating<br>b1, b3<br>~~(~~b, b2)<br>c1<br>c<br>Section B - B and C - C<br>Scale: None<br>Section A - A<br>(3)<br>E1<br>(3)<br>D1<br>E<br>B<br>A<br>A<br>A<br>c2<br>c<br>A1<br>Seating<br>plane<br>Lead tip<br>(3)<br>(2) (3)<br>(2)<br>A<br>E<br>(Datum A)<br>L1<br>L2<br>B<br>B<br>C<br>C<br>3<br>2<br>1<br>L<br>D<br>2 x e<br>3 x b2<br>3 x b<br>0.010<br>A<br>B<br>M<br>M<br>**Modified JEDEC outline TO-262**<br>**Lead assignments**<br>Diodes<br>1. - Anode (two die)/open (one die)<br>2., 4. - Cathode<br>3. - Anode| |---|---|---|---|---|---|---|---|---| ||||() <br><br>tum A)|()<br>A<br>E<br>3<br>2||||| ||||L1|||||| ||||1<br>D|||||| ||||L2<br>B<br>B<br>2 x e|C<br>C<br>L<br>3 x b<br>3 x b||||| |||||||||| ||||0.010<br>A<br>M<br>M|||||| |||||||||| ||||Lead tip|||||| |||||||||| |**SYMBOL**|||**MILLIMETERS**|||**INCHES**||**NOTES**| ||||**MIN.**|**MAX.**||**MIN.**|**MAX.**|| |A|||4.06|4.83||0.160|0.190|| |A1|||2.03|3.02||0.080|0.119|| |b|||0.51|0.99||0.020|0.039|| |b1|||0.51|0.89||0.020|0.035|4| |b2|||1.14|1.78||0.045|0.070|| |b3|||1.14|1.73||0.045|0.068|4| |c|||0.38|0.74||0.015|0.029|| |c1|||0.38|0.58||0.015|0.023|4| |c2|||1.14|1.65||0.045|0.065|| |D|||8.51|9.65||0.335|0.380|2| |D1|||6.86|8.00||0.270|0.315|3| |E|||9.65|10.67||0.380|0.420|2, 3| |E1|||7.90|8.80||0.311|0.346|3| |e|||2.54 BSC|||0.100 BSC||| |L|||13.46|14.10||0.530|0.555|| |L1|||-|1.65||-|0.065|3| |L2|||3.56|3.71||0.140|0.146|| ## **Notes** - (1) Dimensioning and tolerancing as per ASME Y14.5M-1994 - (2) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outmost extremes of the plastic body - (6) Outline conform to JEDEC TO-262 except A1 (maximum), b (minimum) and D1 (minimum) where dimensions derived the actual package outline > (3) Thermal pad contour optional within dimension E, L1, D1 and E1 - (4) Dimension b1 and c1 apply to base metal only - (5) Controlling dimension: inches For technical questions concerning discrete products, contact: diodes-tech@vishay.com For technical questions concerning module products, contact: ind-modules@vishay.com Document Number: 95014 Revision: 31-Mar-09 www.vishay.com 2 **Legal Disclaimer Notice** Vishay www.vishay.com **==> picture [59 x 48] intentionally omitted <==** ## **Disclaimer** ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. ## **Material Category Policy** **Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant.** **Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.** **Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards.** Revision: 02-Oct-12 Document Number: 91000 **1**
Updated at February 9, 2023
Vishay is a global leader in the manufacturing of discrete semiconductors and passive electronic components. Renowned for its exceptional quality and engineering expertise, the company produces highly reliable solutions that drive innovation across the industrial, automotive, telecommunications, and consumer electronics markets. From advanced factory automation to vehicle electrification, Vishay components provide the foundational building blocks for modern electronic design. The company's expansive portfolio is heavily focused on efficient power management, signal routing, and energy storage. Within its passive component lineup, Vishay is recognized for its extensive array of high-performance capacitors, including robust aluminium electrolytic, film, and polymer variants, alongside highly efficient power inductors. In the realm of discrete semiconductors, Vishay is a premier manufacturer of single and dual MOSFETs, as well as a vast selection of Schottky, Zener, and fast-recovery rectifier diodes designed for demanding power applications. Furthermore, Vishay delivers industry-leading circuit protection and thermal management solutions. With a broad offering of transient voltage suppressors (TVS diodes) and temperature-sensing NTC thermistors, these components are engineered to safeguard sensitive circuitry against both electrical and thermal overstress. By combining this vital mix of advanced discretes and passives, Vishay enables engineers to develop robust, space-saving, and highly resilient electronic systems.
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