VS-MURB1520-M3

**VS-MURB1520-M3, VS-MURB1520-1-M3** 

www.vishay.com 

## Vishay Semiconductors 

## **Ultrafast Rectifier, 15 A FRED Pt[®]** 

## **FEATURES** 

- Ultrafast recovery time 

- Low forward voltage drop 

- Low leakage current 

2 3 • 175 °C operating junction temperature 3 1 1[2] • Meets MSL level 1, per J-STD-020, **D[2] PAK (TO-263AB) TO-262AA** LF maximum peak of 245 °C Base • Material categorization: for definitions of compliance cathode2 2 please see www.vishay.com/doc?99912 **DESCRIPTION / APPLICATIONS** MUR.. series are the state of the art ultrafast recovery rectifiers specifically designed with optimized performance ~~|~~ 1 ~~4~~ 3 ~~|~~ 1 3 of forward voltage drop and ultrafast recovery time. N/C Anode N/C Anode The planar structure and the platinum doped life time **VS-MURB1520-M3 VS-MURB1520-1-M3** control, guarantee the best overall performance, ruggedness and reliability characteristics. 

## **PRIMARY CHARACTERISTICS** 

|**PRIMARY CHARACTERISTICS**|**PRIMARY CHARACTERISTICS**|
|---|---|
|IF(AV)|15 A|
|VR|200 V|
|VFat IF|0.85 V|
|trr|35 ns|
|TJmax.|175 °C|
|Package|D2PAK (TO-263AB), TO-262AA|
|Circuit configuration|Single|



These devices are intended for use in the output rectification stage of SMPS, UPS, DC/DC converters as well as freewheeling diode in low voltage inverters and chopper motor drives. 

Their extremely optimized stored charge and low recovery current minimize the switching losses and reduce over dissipation in the switching element and snubbers. 

## **ABSOLUTE MAXIMUM RATINGS** 

|**ABSOLUTE MAXIMUM RATINGS**|**ABSOLUTE MAXIMUM RATINGS**|**ABSOLUTE MAXIMUM RATINGS**|**ABSOLUTE MAXIMUM RATINGS**|**ABSOLUTE MAXIMUM RATINGS**|
|---|---|---|---|---|
|**PARAMETER**|**SYMBOL**|**TEST CONDITIONS**|**MAX.**|**UNITS**|
|Peak repetitive reverse voltage|VRRM||200|V|
|Average rectified forward current|IF(AV)|Total device, rated VR, TC= 150 °C|15|A|
|Non-repetitive peak surge current|IFSM||200||
|Peak repetitive forward current|IFM|Rated VR, square wave, 20 kHz, TC= 150 °C|30||
|Operatingjunction and storage temperatures|TJ, TStg||-65 to +175|°C|



|**ELECTRICAL SPECIFICATIONS**(TJ= 25 °C unless otherwise specified)<br>~~|~~|**ELECTRICAL SPECIFICATIONS**(TJ= 25 °C unless otherwise specified)<br>~~|~~|**ELECTRICAL SPECIFICATIONS**(TJ= 25 °C unless otherwise specified)<br>~~|~~|**ELECTRICAL SPECIFICATIONS**(TJ= 25 °C unless otherwise specified)<br>~~|~~|**ELECTRICAL SPECIFICATIONS**(TJ= 25 °C unless otherwise specified)<br>~~|~~|**ELECTRICAL SPECIFICATIONS**(TJ= 25 °C unless otherwise specified)<br>~~|~~|**ELECTRICAL SPECIFICATIONS**(TJ= 25 °C unless otherwise specified)<br>~~|~~|
|---|---|---|---|---|---|---|
|**PARAMETER**<br>~~a~~|**SYMBOL**<br>~~a~~|**TEST CONDITIONS**<br>~~a~~|**MIN.**<br>~~a~~|**TYP.**<br>~~a~~|**MAX.**<br>~~a~~|**UNITS**<br>~~a~~|
|Breakdown voltage,<br>blockingvoltage<br>~~fe~~|VBR,<br>VR<br>~~fe~~|IR= 100 μA<br>~~fe~~|200|-|-|V|
|Forward voltage<br>~~|~~|VF<br>~~|~~|IF= 15 A<br>~~Or~~<br>~~|~~|-<br>~~Or~~<br>~~|~~|-<br>~~Or~~<br>~~|~~|1.05<br>~~Or~~<br>~~|~~||
|||IF= 15 A, TJ= 150 °C<br>~~|~~|-<br>~~|~~<br>~~C~~|-<br>~~|~~|0.85<br>~~|~~||
|Reverse leakage current<br>~~es~~|IR|VR= VRrated<br>~~a~~|-<br>~~a~~<br>~~C~~|-<br>~~a~~|10<br>~~a~~|μA<br>~~a~~|
|||TJ= 150 °C, VR= VRrated|-<br>~~C~~|-|500||
|Junction capacitance<br>~~es~~|CT|VR= 200 V|-|55|-|pF|
|Series inductance<br>~~es~~<br>~~a~~|LS|Measured lead to lead 5 mm from package body|-|8.0|-|nH|



Revision: 21-Dec-2021 

Document Number: 96316 

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## **VS-MURB1520-M3, VS-MURB1520-1-M3** 

www.vishay.com 

## Vishay Semiconductors 

|**DYNAMIC RECOVERY CHARACTERISTICS**(TJ= 25 °C unless otherwise specified)|**DYNAMIC RECOVERY CHARACTERISTICS**(TJ= 25 °C unless otherwise specified)|**DYNAMIC RECOVERY CHARACTERISTICS**(TJ= 25 °C unless otherwise specified)|**DYNAMIC RECOVERY CHARACTERISTICS**(TJ= 25 °C unless otherwise specified)|**DYNAMIC RECOVERY CHARACTERISTICS**(TJ= 25 °C unless otherwise specified)|**DYNAMIC RECOVERY CHARACTERISTICS**(TJ= 25 °C unless otherwise specified)|**DYNAMIC RECOVERY CHARACTERISTICS**(TJ= 25 °C unless otherwise specified)|**DYNAMIC RECOVERY CHARACTERISTICS**(TJ= 25 °C unless otherwise specified)|
|---|---|---|---|---|---|---|---|
|**PARAMETER**|**SYMBOL**|**TEST CONDITIONS**||**MIN.**|**TYP.**|**MAX.**|**UNITS**|
|Reverse recovery time|trr|IF= 1.0 A, dIF/dt = 50 A/μs, VR= 30 V||-|-|35|ns|
|||TJ= 25 °C|IF= 15 A<br>dIF/dt = 200 A/μs<br>VR= 160 V|-|22|-||
|||TJ= 125 °C||-|39|-||
|Peak recovery current|IRRM|TJ= 25 °C||-|1.6|-|A|
|||TJ= 125 °C||-|4.1|-||
|Reverse recovery charge|Qrr|TJ= 25 °C||-|19|-|nC|
|||TJ= 125 °C||-|90|-||



|**THERMAL - MECHANICAL SPECIFICATIONS**|**THERMAL - MECHANICAL SPECIFICATIONS**|**THERMAL - MECHANICAL SPECIFICATIONS**|||||
|---|---|---|---|---|---|---|
|**PARAMETER**|**SYMBOL**|**TEST CONDITIONS**|**MIN.**|**TYP.**|**MAX.**|**UNITS**|
|Maximum junction and<br>storage temperature range|TJ, TStg||-65|-|175|°C|
|Thermal resistance,<br>junction-to-case|RthJC||-|-|1.5|°C/W|
|Thermal resistance,<br>junction-to-ambient|RthJA||-|-|50||
|Thermal resistance,<br>case-to-heatsink|RthCS|Mounting surface, flat, smooth, and<br>greased|-|0.5|-||
|Weight|||-|2.0|-|g|
||||-|0.07|-|oz.|
|Mounting torque|||6.0<br>(5.0)|-|12<br>(10)|kgf · cm<br>(lbf · in)|
|Marking device||Case style D2PAK (TO-263AB)|MURB1520||||
|||Case style TO-262|MURB1520-1||||



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**----- Start of picture text -----**<br>
100<br>10<br>T J  = 175 °C<br>TJ = 150 °C<br>1 TJ = 25 °C<br>0.1<br>0 0.3 0.6 0.9 1.2 1.5<br>VF - Forward Voltage Drop (V)<br> - Instantaneous Forward Current (A)<br>IF<br>**----- End of picture text -----**<br>


Fig. 1 - Typical Forward Voltage Drop Characteristics 

**==> picture [202 x 164] intentionally omitted <==**

**----- Start of picture text -----**<br>
1000<br>TJ = 175 °C<br>100 TJ = 150 °C<br>T J  = 125 °C<br>10<br>TJ = 100 °C<br>1<br>0.1<br>TJ = 25 °C<br>0.01<br>0 50 100 150 200 250<br>VR - Reverse Voltage (V)<br> - Reverse Current (µA)<br>IR<br>**----- End of picture text -----**<br>


Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage 

Revision: 21-Dec-2021 

Document Number: 96316 

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For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

## **VS-MURB1520-M3, VS-MURB1520-1-M3** 

www.vishay.com 

## Vishay Semiconductors 

**==> picture [204 x 163] intentionally omitted <==**

**----- Start of picture text -----**<br>
1000<br>100 TJ = 25  ° C<br>10<br>1  10 100 1000<br>VR - Reverse Voltage (V)<br> - Junction Capacitance (pF)<br>T<br>C<br>**----- End of picture text -----**<br>


Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage 

**==> picture [404 x 163] intentionally omitted <==**

**----- Start of picture text -----**<br>
 10<br> 1<br>P DM<br>D = 0.50 t1<br>0.1 D = 0.20 t2<br>D = 0.10<br>D = 0.05 Notes:<br>Single pulse D = 0.02 1. Duty factor D = t1/t2 .<br>0.01 (thermal resistance) D = 0.01 2. Peak TJ = PDM x ZthJC + TC .<br>0.00001 0.0001 0.001 0.01 0.1  1<br>t1 - Rectangular Pulse Duration (s)<br> - Thermal Impedance (°C/W)<br>thJC<br>Z<br>**----- End of picture text -----**<br>


Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics 

**==> picture [201 x 165] intentionally omitted <==**

**----- Start of picture text -----**<br>
180<br>170<br>160<br>DC<br>150 Square wave (D = 0.50)<br>Rated VR applied<br>140<br>See note (1)<br>130<br>0 5 10 15 20 25<br>IF(AV) - Average Forward Current (A)<br>Allowable Case Temperature (°C)<br>**----- End of picture text -----**<br>


Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current 

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**----- Start of picture text -----**<br>
25<br>20<br>RMS limit<br>15<br>D = 0.01<br>D = 0.02<br>10 D = 0.05<br>D = 0.10<br>D = 0.20<br>5<br>DC D = 0.50<br>0<br>0 5 10 15 20 25<br>IF(AV) - Average Forward Current (A)<br>Average Power Loss (W)<br>**----- End of picture text -----**<br>


Fig. 6 - Forward Power Loss Characteristics 

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**VS-MURB1520-M3, VS-MURB1520-1-M3** 

www.vishay.com 

## Vishay Semiconductors 

**==> picture [205 x 164] intentionally omitted <==**

**----- Start of picture text -----**<br>
60<br>V R = 160 V<br>TJ = 125 °C<br>50 T J  = 25 °C<br>IF = 30 A<br>40 IF = 15 A<br>IF = 8 A<br>30<br>20<br>10<br>100 1000<br>dIF/dt (A/µs)<br> (ns)<br>trr<br>**----- End of picture text -----**<br>


Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt 

**==> picture [205 x 164] intentionally omitted <==**

**----- Start of picture text -----**<br>
200<br>VR = 160 V<br>TJ = 125 °C<br>160 T J  = 25  ° C<br>IF = 30 A<br>IF = 15 A<br>120 I F  = 8 A<br>80<br>40<br>0<br>100 1000<br>dIF/dt (A/µs)<br> (nC)<br>rr<br>Q<br>**----- End of picture text -----**<br>


Fig. 8 - Typical Stored Charge vs. dIF/dt 

## **Note** 

> (1) Formula used: TC = TJ - (Pd + PdREV) x RthJC; Pd = forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = inverse power loss = VR1 x IR (1 - D); IR at VR1 = rated VR 

**==> picture [272 x 221] intentionally omitted <==**

**----- Start of picture text -----**<br>
(3)<br>IF trr<br>ta tb<br>0<br>(4)<br>Qrr<br>(2)<br>IRRM 0.5 IRRM<br>di(rec)M/dt (5)<br>0.75 IRRM<br>(1) diF/dt<br>(1) diF/dt - rate of change of current  (4) Qrr - area under curve defined by trr<br>      through zero crossing       and IRRM<br>(2) IRRM - peak reverse recovery current Qrr = t      2rr x IRRM<br>(3) t     from zero crossing point of negative rr - reverse recovery time measured  (5) di(rec)M/dt - peak rate of change of<br>     going IF to point where a line passing        current during tb portion of trr<br>    through 0.75 IRRM and 0.50 IRRM<br>    extrapolated to zero current.<br>**----- End of picture text -----**<br>


Fig. 9 - Reverse Recovery Waveform and Definitions 

Revision: 21-Dec-2021 

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## **VS-MURB1520-M3, VS-MURB1520-1-M3** 

www.vishay.com 

## Vishay Semiconductors 

## **ORDERING INFORMATION TABLE** 

**==> picture [400 x 240] intentionally omitted <==**

**----- Start of picture text -----**<br>
Device code VS- MUR B 15 20 -1 TRL -M3<br>1 2 3 4 5 6 7 8<br>1 - Vishay Semiconductors product<br>2 - Ultrafast MUR series<br>3 - B = D [2] PAK (TO-263AB) / TO-262AA<br>4 - Current rating (15 = 15 A)<br>5 - Voltage rating (20 = 200 V)<br>6 -  None = D [2] PAK (TO-263AB)<br> -1 = TO-262AA<br>7 -  None = tube (50 pieces)<br> TRL = tape and reel (left oriented, for D [2] PAK (TO-263AB) package)<br> TRR = tape and reel (right oriented, for D [2] PAK (TO-263AB) package)<br>8 - Environmental digit:<br>**----- End of picture text -----**<br>


- -M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free 

|**ORDERING INFORMATION** (Example)|**ORDERING INFORMATION** (Example)|**ORDERING INFORMATION** (Example)|
|---|---|---|
|**PREFERRED P/N**|**BASE QUANTITY**|**PACKAGING DESCRIPTION**|
|VS-MURB1520-M3|50|Antistatic plastic tubes|
|VS-MURB1520TRR-M3|800|13" diameter plastic tape and reel|
|VS-MURB1520TRL-M3|800|13" diameter plastic tape and reel|
|VS-MURB1520-1-M3|50|Antistatic plastic tubes|



||**LINKS TO RELATED DOCUMENTS**|**LINKS TO RELATED DOCUMENTS**||
|---|---|---|---|
|Dimensions|D2PAK (TO-263AB)||www.vishay.com/doc?96164|
||TO-262AA||www.vishay.com/doc?96165|
|Part marking information|D2PAK (TO-263AB)||www.vishay.com/doc?95444|
||TO-262AA||www.vishay.com/doc?95443|
|Packaginginformation|||www.vishay.com/doc?96424|
|SPICE model|||www.vishay.com/doc?95271|



Revision: 21-Dec-2021 

Document Number: 96316 

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**Outline Dimensions** 

**==> picture [59 x 48] intentionally omitted <==**

www.vishay.com 

## Vishay Semiconductors 

## **D[2] PAK** 

## **DIMENSIONS** in millimeters and inches 

**==> picture [496 x 342] intentionally omitted <==**

**----- Start of picture text -----**<br>
Conforms to JEDEC [®]  outline D [2] PAK (SMD-220) B<br>A Pad layout<br>(2)(3) A (E)<br>c2 11.00<br>E MIN.<br>(0.43)<br>A<br>(3) L1 4<br>9.65<br>MIN.<br>(0.38)<br>(D1) (3)<br>Detail A<br>D 17.90 (0.70)<br>H 15.00 (0.625)<br>(2)<br>1 2 3<br>3.81<br>MIN.<br>L2 (0.15)<br>B B 2.32<br>MIN.<br>(0.08)<br>A<br>2.64 (0.103)<br>2 x b2 C E1 (3) 2.41 (0.096)<br>c<br>2 x b View A - A<br>0.010 M A M B ± 0.004 M B<br>2 x e<br>Base<br>Plating (4) Metal<br>H b1, b3<br>Gauge<br>plane<br>(c) c1 (4)<br>0° to 8° B<br>L Seating<br>plane<br>L3 A1<br>(b, b2)<br>Lead tip L4 Section B - B and C - C<br>Detail “A” Scale: None<br>Rotated 90 °CW<br>Scale: 8:1<br>**----- End of picture text -----**<br>


|**SYMBOL**|**MILLIMETERS**|**MILLIMETERS**|**INCHES**|**INCHES**|**NOTES**||**SYMBOL**|**MILLIMETERS**|**MILLIMETERS**|**INCHES**|**INCHES**|**NOTES**|
|---|---|---|---|---|---|---|---|---|---|---|---|---|
||**MIN.**|**MAX.**|**MIN.**|**MAX.**||||**MIN.**|**MAX.**|**MIN.**|**MAX.**||
|A|4.06|4.83|0.160|0.190|||D1|6.86|8.00|0.270|0.315|3|
|A1|0.00|0.254|0.000|0.010|||E|9.65|10.67|0.380|0.420|2, 3|
|b|0.51|0.99|0.020|0.039|||E1|7.90|8.80|0.311|0.346|3|
|b1|0.51|0.89|0.020|0.035|4||e|2.54 BSC||0.100 BSC|||
|b2|1.14|1.78|0.045|0.070|||H|14.61|15.88|0.575|0.625||
|b3|1.14|1.73|0.045|0.068|4||L|1.78|2.79|0.070|0.110||
|c|0.38|0.74|0.015|0.029|||L1|-|1.65|-|0.066|3|
|c1|0.38|0.58|0.015|0.023|4||L2|1.27|1.78|0.050|0.070||
|c2|1.14|1.65|0.045|0.065|||L3|0.25 BSC||0.010 BSC|||
|D|8.51|9.65|0.335|0.380|2||L4|4.78|5.28|0.188|0.208||



## **Notes** 

- (1) Dimensioning and tolerancing per ASME Y14.5 M-1994 

- (2) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outmost extremes of the plastic body 

- (3) Thermal pad contour optional within dimension E, L1, D1 and E1 

- (4) Dimension b1 and c1 apply to base metal only 

- (5) Datum A and B to be determined at datum plane H 

- (6) Controlling dimension: inches 

- (7) Outline conforms to JEDEC® outline TO-263AB 

Revision: 13-Jul-17 

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**Outline Dimensions** 

Vishay Semiconductors 

**==> picture [59 x 48] intentionally omitted <==**

www.vishay.com 

## **TO-262AA** 

## **DIMENSIONS** in millimeters and inches 

**==> picture [324 x 283] intentionally omitted <==**

**----- Start of picture text -----**<br>
Modified JEDEC [®]  outline TO-262<br>(Datum A) (2) (3) A B<br>E A c2 E<br>A<br>(3) L1<br>Seatingplane D1 (3)<br>D<br>1 2 3<br>C C<br>L2<br>B B L (2)<br>A<br>3 x b2 c E1 (3)<br>3 x b A1 Section A - A<br>2 x e<br>(4) Base<br>0.010 M A M B Plating b1, b3 metal<br>Lead assignments<br>Diodes c c1 (4)<br>1. - Anode (two die)/open (one die)<br>2., 4.  - Cathode<br>( b, b2)<br>3. - Anode<br>Lead tip Section B - B and C - C<br>Scale: None<br>**----- End of picture text -----**<br>


||Lead tip<br>2., 4.  - Cathode<br>3. - Anode|Lead tip<br>2., 4.  - Cathode<br>3. - Anode|~~(~~b, b2)<br>Section B - B and C - C<br>Scale: None|~~(~~b, b2)<br>Section B - B and C - C<br>Scale: None||
|---|---|---|---|---|---|
|**SYMBOL**|**MILLIMETERS**||**INCHES**||**NOTES**|
||**MIN.**|**MAX.**|**MIN.**|**MAX.**||
|A|4.06|4.83|0.160|0.190||
|A1|2.03|3.02|0.080|0.119||
|b|0.51|0.99|0.020|0.039||
|b1|0.51|0.89|0.020|0.035|4|
|b2|1.14|1.78|0.045|0.070||
|b3|1.14|1.73|0.045|0.068|4|
|c|0.38|0.74|0.015|0.029||
|c1|0.38|0.58|0.015|0.023|4|
|c2|1.14|1.65|0.045|0.065||
|D|8.51|9.65|0.335|0.380|2|
|D1|6.86|8.00|0.270|0.315|3|
|E|9.65|10.67|0.380|0.420|2, 3|
|E1|7.90|8.80|0.311|0.346|3|
|e|2.54 BSC||0.100 BSC|||
|L|13.46|14.10|0.530|0.555||
|L1|-|1.65|-|0.065|3|
|L2|3.56|3.71|0.140|0.146||



## **Notes** 

> (1) Dimensioning and tolerancing as per ASME Y14.5M-1994 

> (2) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outmost extremes of the plastic body 

> (3) Thermal pad contour optional within dimension E, L1, D1 and E1 

> (4) Dimension b1 and c1 apply to base metal only 

> (5) Controlling dimension: inches 

- (6) Outline conform to JEDEC® TO-262 except A1 (max.), b (min., max.), b1 (min.), b2 (max.), c (min.), c1(min.), c2 (max.), D (min.), E (max.), L1 (max.), L2 (min., max.) 

Revision: 30-Nov-17 

**1** 

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## **Disclaimer** 

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 

Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. 

Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer's technical experts. Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein. 

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Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. 

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. 

_**© 2022 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED**_ 

Revision: 01-Jan-2022 

Document Number: 91000 

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