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VS-MUR2020CTPBF.
Fast / Ultrafast Diode, 200 V, 10 A, Dual Common Cathode, 850 mV, 35 ns, 100 A
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: VISHAY
- Product type: Fast & Ultrafast Recovery Rectifier Diodes
- Repetitive Reverse Voltage Vrrm Max:200V; Forward Current If(AV):10A; Diode Configuration:Dual Common Cathode; Forward Voltage VF Max:850mV; Reverse Recovery Time trr Max:35ns; Forwar
- No. of Pins: 3 Pin
- Product Range: -
- Qualification: -
- Diode Case Style: TO-220AB
- Diode Configuration: Dual Common Cathode
- Forward Voltage Max: 850mV
- Forward Surge Current: 100A
- Reverse Recovery Time: 35ns
- Average Forward Current: 10A
- Operating Temperature Max: 175°C
- Repetitive Peak Reverse Voltage: 200V
| Delivery and price | |
|---|---|
| Units per pack | 4000 |
| Price | 0.554 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
~~—~~ www.vishay.com ## **VS-MUR2020CTPbF, VS-MUR2020CT-N3** ## Vishay Semiconductors ## **Ultrafast Rectifier, 2 x 10 A FRED Pt[®]** **==> picture [187 x 107] intentionally omitted <==** **----- Start of picture text -----**<br> Base<br>common<br>cathode<br>2<br>2<br>Common<br>cathode<br>Anode Anode<br>TO-220AB 1 3<br>**----- End of picture text -----**<br> ## **FEATURES** - Ultrafast recovery time - Low forward voltage drop - 175 °C operating junction temperature - Low leakage current - Compliant to RoHS Directive 2002/95/EC - Designed and qualified according to JEDEC-JESD47 - Halogen-free according to IEC 61249-2-21 definition (-N3 only) ## **DESCRIPTION/APPLICATIONS** ## **PRODUCT SUMMARY** |Package|TO-220AB| |---|---| |IF(AV)|2 x 10 A| |VR<br>VFat IF|200 V<br>See Electrical table| |trrtyp.|See Recovery table| |TJmax.|175 °C| |Diode variation|Common cathode| VS-MUR2020CTPbF is the state of the art ultrafast recovery rectifier specifically designed with optimized performance of forward voltage drop and ultrafast recovery time. The planar structure and the platinum doped life time control, guarantee the best overall performance, ruggedness and reliability characteristics. These devices are intended for use in the output rectification stage of SMPS, UPS, DC/DC converters as well as freewheeling diode in low voltage inverters and chopper motor drives. Their extremely optimized stored charge and low recovery current minimize the switching losses and reduce over dissipation in the switching element and snubbers. ## **ABSOLUTE MAXIMUM RATINGS** |**ABSOLUTE MAXIMUM RATINGS**|**ABSOLUTE MAXIMUM RATINGS**|**ABSOLUTE MAXIMUM RATINGS**|**ABSOLUTE MAXIMUM RATINGS**|**ABSOLUTE MAXIMUM RATINGS**| |---|---|---|---|---| |**PARAMETER**|**SYMBOL**|**TEST CONDITIONS**|**MAX.**|**UNITS**| |Peak repetitive reverse voltage|VRRM||200|V| |Average rectified forward current<br>per leg<br>total device|IF(AV)||10|A| |||Rated VR, TC= 145 °C|20|| |Non-repetitive peak surge current per leg|IFSM||100|| |Peak repetitive forward current per leg|IFM|Rated VR, square wave, 20 kHz, TC= 145 °C|20|| |Operating junction and storage temperatures|TJ, TStg||- 65 to<br>175|°C| |**ELECTRICAL SPECIFICATIONS**(TJ= 25 °C unless otherwise specified)<br>~~a)~~|**ELECTRICAL SPECIFICATIONS**(TJ= 25 °C unless otherwise specified)<br>~~a)~~|**ELECTRICAL SPECIFICATIONS**(TJ= 25 °C unless otherwise specified)<br>~~a)~~|**ELECTRICAL SPECIFICATIONS**(TJ= 25 °C unless otherwise specified)<br>~~a)~~|**ELECTRICAL SPECIFICATIONS**(TJ= 25 °C unless otherwise specified)<br>~~a)~~|**ELECTRICAL SPECIFICATIONS**(TJ= 25 °C unless otherwise specified)<br>~~a)~~|**ELECTRICAL SPECIFICATIONS**(TJ= 25 °C unless otherwise specified)<br>~~a)~~| |---|---|---|---|---|---|---| |**PARAMETER**<br>~~a ~~|**SYMBOL**<br> ~~GO~~|**TEST CONDITIONS**<br>~~GO~~|**MIN.**<br>~~GO~~|**TYP.**<br>~~GO~~|**MAX.**<br>~~GO~~|**UNITS**<br>~~GO~~| |Breakdown voltage,<br>blockingvoltage<br>~~P|~~|VBR,<br>VR<br>~~P|~~|IR= 100 μA<br>|200<br>|-<br>|-<br>|V<br>-<br>~~ee~~| |Forward voltage<br>~~P|~~|VF<br>~~P|ee~~<br>~~po~~|IF= 8 A, TJ= 125 °C<br>|-<br>|-<br>|0.85<br>|| |||IF= 16 A<br>~~ee~~|-<br>~~ee~~|-<br>~~ee~~|1.15<br>~~ee~~|| |||IF= 16 A, TJ= 125 °C<br><br>~~po~~|-<br><br>~~po~~|-<br><br>~~po~~<br>~~eee~~|1.05<br><br>~~po~~<br>~~eee~~|| |Reverse leakage current<br>~~eee~~<br>~~po~~|IR<br>~~eee~~<br>~~ee~~|VR= VRrated<br>~~eee~~|-<br>~~eee~~|-<br>~~eee~~<br>~~eee~~|15<br>~~eee~~<br>~~eee~~|μA<br>~~eee~~<br>~~ee~~| |||TJ= 150 °C, VR= VRrated<br>~~eee~~<br>~~ee~~|-<br>~~eee~~<br>~~ee~~|-<br>~~eee~~<br>~~eee~~<br>~~ee~~|250<br>~~eee~~<br>~~eee~~<br>~~ee~~|| |Junction capacitance<br>~~eee~~<br>~~po~~|CT<br>~~eee~~<br>~~ee~~|VR= 200 V<br>~~eee~~<br>~~ee~~|-<br>~~eee~~<br>~~ee~~|55<br>~~eee~~<br>~~eee~~<br>~~ee~~|-<br>~~eee~~<br>~~eee ~~<br>~~ee~~|pF<br>~~eee~~<br> ~~ee~~| |Series inductance<br>~~po~~<br>~~GD~~|LS<br>~~ee~~<br>~~GD~~|Measured lead to lead 5 mm from package body<br>~~ee~~<br>~~GD~~|-<br>~~ee~~<br>~~GD~~|8.0<br>~~ee~~<br>~~GD~~|-<br>~~ee~~<br>~~GD~~|nH<br>~~GD~~| Revision: 11-Aug-11 **1** For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Document Number: 94079 **==> picture [59 x 48] intentionally omitted <==** www.vishay.com ## **VS-MUR2020CTPbF, VS-MUR2020CT-N3** ## Vishay Semiconductors |**DYNAMIC RECOVERY CHARACTERISTICS**(TJ= 25 °C unless otherwise specified)|**DYNAMIC RECOVERY CHARACTERISTICS**(TJ= 25 °C unless otherwise specified)|**DYNAMIC RECOVERY CHARACTERISTICS**(TJ= 25 °C unless otherwise specified)|**DYNAMIC RECOVERY CHARACTERISTICS**(TJ= 25 °C unless otherwise specified)|**DYNAMIC RECOVERY CHARACTERISTICS**(TJ= 25 °C unless otherwise specified)|**DYNAMIC RECOVERY CHARACTERISTICS**(TJ= 25 °C unless otherwise specified)|**DYNAMIC RECOVERY CHARACTERISTICS**(TJ= 25 °C unless otherwise specified)|**DYNAMIC RECOVERY CHARACTERISTICS**(TJ= 25 °C unless otherwise specified)| |---|---|---|---|---|---|---|---| |**PARAMETER**|**SYMBOL**|**TEST CONDITIONS**||**MIN.**|**TYP.**|**MAX.**|**UNITS**| |Reverse recovery time|trr|IF= 1.0 A, dIF/dt = 50 A/μs, VR= 30 V||-|-|35|ns| |||IF= 0.5 A, IR= 1.0 A, IREC= 0.25 A||-|-|25|| |||TJ= 25 °C|IF= 10 A<br>dIF/dt = 200 A/μs<br>VR= 160 V|-|21|-|| |||TJ= 125 °C||-|35|-|| |Peak recovery current|IRRM|TJ= 25 °C||-|1.9|-|A| |||TJ= 125 °C||-|4.8|-|| |Reverse recovery charge|Qrr|TJ= 25 °C||-|25|-|nC| |||TJ= 125 °C||-|78|-|| ## **THERMAL - MECHANICAL SPECIFICATIONS** |**THERMAL - MECHANICAL SPECIFICATIONS**|**THERMAL - MECHANICAL SPECIFICATIONS**|**THERMAL - MECHANICAL SPECIFICATIONS**|**THERMAL - MECHANICAL SPECIFICATIONS**|**THERMAL - MECHANICAL SPECIFICATIONS**|**THERMAL - MECHANICAL SPECIFICATIONS**|**THERMAL - MECHANICAL SPECIFICATIONS**|**THERMAL - MECHANICAL SPECIFICATIONS**| |---|---|---|---|---|---|---|---| |**PARAMETER**||**SYMBOL**|**TEST CONDITIONS**|**MIN.**|**TYP.**|**MAX.**|**UNITS**| |Maximum junction and storage<br>temperature range||TJ, TStg||- 65|-|175|°C| |Thermal resistance,<br>junction to case|per leg|RthJC||-|-|2.5|°C/W| ||total device|||-|-|1.25|| |Thermal resistance,<br>junction to ambient per leg||RthJA||-|-|50|| |Thermal resistance,<br>case to heatsink||RthCS|Mounting surface, flat, smooth and<br>greased|-|0.5|-|| |Weight||||-|2.0|-|g| |||||-|0.07|-|oz.| |Mounting torque||||6.0<br>(5.0)|-|12<br>(10)|kgf · cm<br>(lbf · in)| |Marking device|||Case style TO-220AB|MUR2020CT|||| Revision: 11-Aug-11 Document Number: 94079 **2** For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **VS-MUR2020CTPbF, VS-MUR2020CT-N3** **==> picture [59 x 48] intentionally omitted <==** www.vishay.com ## Vishay Semiconductors **==> picture [468 x 167] intentionally omitted <==** **----- Start of picture text -----**<br> 100 100<br>TJ = 175 °C<br>10 TJ = 150 °C<br>10 T J = 125 °C<br>1<br>T T J J = 175 = 125 °C° C 0.1 T J = 100 °C<br>1 TJ = 25 °C<br>0.01<br>TJ = 25 °C<br>0.1 0.001<br>0 0.4 0.8 1.2 1.6 2.0 0 50 100 150 200 250<br>VFM - Forward Voltage Drop (V) VR - Reverse Voltage (V)<br> - Instantaneous<br>IF<br>Forward Current (A) - Reverse Current (µA)<br>IR<br>**----- End of picture text -----**<br> Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage **==> picture [206 x 166] intentionally omitted <==** **----- Start of picture text -----**<br> 1000<br>100 TJ = 25 °C<br>10<br>0 10 100 1000<br>VR - Reverse Voltage (V)<br> - Junction Capacitance (pF)<br>T<br>C<br>**----- End of picture text -----**<br> Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage **==> picture [406 x 166] intentionally omitted <==** **----- Start of picture text -----**<br> 10<br> 1<br>P DM<br>D = 0.50<br>D = 0.20 t1<br>D = 0.10<br>0.1 D = 0.05 t2<br>Single pulse D = 0.02<br>Notes:<br>(thermal resistance) D = 0.01 1. Duty factor D = t1/t2 .<br>0.01 2. Peak TJ = PDM x ZthJC + TC .<br>0.00001 0.0001 0.001 0.01 0.1 1<br>t1 - Rectangular Pulse Duration (s)<br>- Thermal Impedance (°C/W)<br>thJC<br>Z<br>**----- End of picture text -----**<br> Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics Revision: 11-Aug-11 Document Number: 94079 **3** For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **VS-MUR2020CTPbF, VS-MUR2020CT-N3** **==> picture [59 x 48] intentionally omitted <==** **==> picture [78 x 10] intentionally omitted <==** **----- Start of picture text -----**<br> www.vishay.com<br>**----- End of picture text -----**<br> **==> picture [202 x 167] intentionally omitted <==** **----- Start of picture text -----**<br> 180<br>170<br>160<br>DC<br>150 Square wave (D = 0.50)<br>Rated VR applied<br>140<br>See note (1)<br>130<br>0 3 6 9 12 15<br>IF(AV) - Average Forward Current (A)<br>Allowable Case Temperature (°C)<br>**----- End of picture text -----**<br> Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current **==> picture [202 x 180] intentionally omitted <==** **----- Start of picture text -----**<br> 15<br>12<br>RMS limit<br>9<br>D = 0.01<br>D = 0.02<br>6 D = 0.05<br>D = 0.10<br>D = 0.20<br>3<br>DC D = 0.50<br>0<br>0 3 6 9 12 15<br>IF(AV) - Average Forward Current (A)<br> Fig. 6 - Forward Power Loss Characteristics<br>Average Power Loss (W)<br>**----- End of picture text -----**<br> ## Vishay Semiconductors **==> picture [206 x 166] intentionally omitted <==** **----- Start of picture text -----**<br> 50<br>V R = 160 V<br>TJ = 125 °C<br>40 T J = 25 °C<br>30<br>20<br>10 I F = 20 A<br>IF = 10 A<br>IF = 5 A<br>0<br>100 1000<br>dIF/dt (A/µs)<br> (ns)<br>trr<br>**----- End of picture text -----**<br> Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt **==> picture [206 x 167] intentionally omitted <==** **----- Start of picture text -----**<br> 250<br>VR = 160 V<br>TJ = 125 °C<br>200 T J = 25 ° C<br>IF = 20 A<br>IF = 10 A<br>150 I F = 5 A<br>100<br>50<br>0<br>100 1000<br>dIF/dt (A/µs)<br> (nC)<br>rr<br>Q<br>**----- End of picture text -----**<br> Fig. 8 - Typical Stored Charge vs. dIF/dt ## **Note** - (1) Formula used: TC = TJ - (Pd + PdREV) x RthJC; Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = Rated VR Revision: 11-Aug-11 Document Number: 94079 **4** For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **==> picture [59 x 48] intentionally omitted <==** www.vishay.com ## **VS-MUR2020CTPbF, VS-MUR2020CT-N3** ## Vishay Semiconductors **==> picture [240 x 135] intentionally omitted <==** **----- Start of picture text -----**<br> VR = 200 V<br>0.01 Ω<br>L = 70 μH<br>D.U.T.<br>D<br>dIF/dt<br>adjust<br>G IRFP250<br>S<br>**----- End of picture text -----**<br> Fig. 9 - Reverse Recovery Parameter Test Circuit **==> picture [274 x 221] intentionally omitted <==** **----- Start of picture text -----**<br> (3)<br>IF trr<br>ta tb<br>0<br>(4)<br>Qrr<br>(2)<br>IRRM 0.5 IRRM<br>dI(rec)M/dt (5)<br>0.75 IRRM<br>(1) dIF/dt<br>(1) dIF/dt - rate of change of current (4) Qrr - area under curve defined by trr<br> through zero crossing and IRRM<br>(2) IRRM - peak reverse recovery current Qrr = t 2rr x IRRM<br>(3) t from zero crossing point of negative rr - reverse recovery time measured (5) dI(rec)M/dt - peak rate of change of<br> going IF to point where a line passing current during tb portion of trr<br> through 0.75 IRRM and 0.50 IRRM<br> extrapolated to zero current.<br>**----- End of picture text -----**<br> Fig. 10 - Reverse Recovery Waveform and Definitions Revision: 11-Aug-11 Document Number: 94079 **5** For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **==> picture [59 x 48] intentionally omitted <==** www.vishay.com ## **VS-MUR2020CTPbF, VS-MUR2020CT-N3** ## Vishay Semiconductors ## **ORDERING INFORMATION TABLE** |**Device code**|**VS-**|**VS-**|||**MUR**<br>**20**<br>**20**<br>**CT**|**MUR**<br>**20**<br>**20**<br>**CT**|**PbF**|| |---|---|---|---|---|---|---|---|---| |||1|||5<br>3<br>2<br>4||6|| ||**1**||-||Vishay Semiconductors product|||| ||**2**||-||Ultrafast MUR series|||| ||**3**||-||Current rating (20 = 20|A)||| ||**4**||-||Voltage rating (20 = 200 V)|||| ||**5**||-||CT = Center tap (dual)|||| ||**6**||-||Environmental digit:|||| ||||||PbF = Lead (Pb)-free and RoHS compliant|||| ||||||-N3 = Halogen-free, RoHS||compliant and totally lead (Pb)-free|| ## **ORDERING INFORMATION** (Example) |**ORDERING INFORMATION**(Example)|**ORDERING INFORMATION**(Example)|**ORDERING INFORMATION**(Example)|**ORDERING INFORMATION**(Example)| |---|---|---|---| |**PREFERRED P/N**|**QUANTITY PER T/R**|**MINIMUM ORDER QUANTITY**|**PACKAGING DESCRIPTION**| |VS-MUR2020CTPbF|50|1000|Antistatic plastic tube| |VS-MUR2020CT-N3|50|1000|Antistatic plastic tube| ||||| |---|---|---|---| ||**LINKS TO RELATED DOCUMENTS**||| |Dimensions|||www.vishay.com/doc?95222| |Part marking information|TO-220ABPbF<br>TO-220AB-N3||www.vishay.com/doc?95225| ||||www.vishay.com/doc?95028| |SPICE model|||www.vishay.com/doc?95272| Revision: 11-Aug-11 Document Number: 94079 **6** For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **Legal Disclaimer Notice** Vishay www.vishay.com **==> picture [59 x 48] intentionally omitted <==** ## **Disclaimer** ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. ## **Material Category Policy** **Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant.** **Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.** **Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards.** Revision: 02-Oct-12 Document Number: 91000 **1**
Updated at June 4, 2026
Vishay is a global leader in the manufacturing of discrete semiconductors and passive electronic components. Renowned for its exceptional quality and engineering expertise, the company produces highly reliable solutions that drive innovation across the industrial, automotive, telecommunications, and consumer electronics markets. From advanced factory automation to vehicle electrification, Vishay components provide the foundational building blocks for modern electronic design. The company's expansive portfolio is heavily focused on efficient power management, signal routing, and energy storage. Within its passive component lineup, Vishay is recognized for its extensive array of high-performance capacitors, including robust aluminium electrolytic, film, and polymer variants, alongside highly efficient power inductors. In the realm of discrete semiconductors, Vishay is a premier manufacturer of single and dual MOSFETs, as well as a vast selection of Schottky, Zener, and fast-recovery rectifier diodes designed for demanding power applications. Furthermore, Vishay delivers industry-leading circuit protection and thermal management solutions. With a broad offering of transient voltage suppressors (TVS diodes) and temperature-sensing NTC thermistors, these components are engineered to safeguard sensitive circuitry against both electrical and thermal overstress. By combining this vital mix of advanced discretes and passives, Vishay enables engineers to develop robust, space-saving, and highly resilient electronic systems.
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