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VS-HFA08TB60S-M3
Fast / Ultrafast Diode, 600 V, 8 A, Single, 1.7 V, 55 ns, 60 A
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- Manufacturer: VISHAY
- Product type: Fast & Ultrafast Recovery Rectifier Diodes
- Repetitive Reverse Voltage Vrrm Max:600V; Forward Current If(AV):8A; Diode Configuration:Single; Forward Voltage VF Max:1.7V; Reverse Recovery Time trr Max:55ns; Forward Surge Curre
- SVHC: Lead (04-Feb-2026)
- No. of Pins: 3 Pin
- Product Range: HEXFRED
- Qualification: -
- Diode Case Style: TO-263AB
- Diode Configuration: Single
- Forward Voltage Max: 1.7V
- Forward Surge Current: 60A
- Reverse Recovery Time: 55ns
- Average Forward Current: 8A
- Operating Temperature Max: 150°C
- Repetitive Peak Reverse Voltage: 600V
| Delivery and price | |
|---|---|
| Units per pack | 8000 |
| Price | 0.593 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
**VS-HFA08TB60S-M3**
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www.vishay.com<br>**----- End of picture text -----**<br>
## Vishay Semiconductors
## **HEXFRED[®] Ultrafast Soft Recovery Diode, 8 A**
## **FEATURES**
- Ultrafast and ultrasoft recovery
- Very low IRRM and Qrr
- Specified at operating conditions
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2<br>1<br>3<br>D [2] PAK (TO-263AB)<br>**----- End of picture text -----**<br>
- Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
## **BENEFITS**
- Reduced RFI and EMI
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Base<br>cathode<br>2<br>1 3<br>N/C Anode<br>**----- End of picture text -----**<br>
## **LINKS TO ADDITIONAL RESOURCES**
~~as~~ 3D Models
|**PRIMARY CHARACTERISTICS**|**PRIMARY CHARACTERISTICS**|
|---|---|
|IF(AV)|8 A|
|VR|600 V|
|VFat IF|1.4 V|
|trr(typ.)|18 ns|
|TJmax.|150 °C|
|Package|D2PAK (TO-263AB)|
|Circuit configuration|Single|
## **MECHANICAL DATA**
## **Case:** D[2] PAK (TO-263AB)
Molding compound meets UL 94 V-0 flammability rating
- Reduced power loss in diode and switching transistor
- Higher frequency operation
- Reduced snubbing
- Reduced parts count
## **DESCRIPTION**
VS-HFA08TB60S is a state of the art ultrafast recovery diode. Employing the latest in epitaxial construction and advanced processing techniques it features a superb combination of characteristics which result in performance which is unsurpassed by any rectifier previously available. With basic ratings of 600 V and 8 A continuous current, the VS-HFA08TB60S is especially well suited for use as the companion diode for IGBTs and MOSFETs. In addition to ultrafast recovery time, the HEXFRED[®] product line features extremely low values of peak recovery current (IRRM) and does not exhibit any tendency to “snap-off” during the tb portion of recovery. The HEXFRED features combine to offer designers a rectifier with lower noise and significantly lower switching losses in both the diode and the switching transistor. These HEXFRED advantages can help to significantly reduce snubbing, component count and heatsink sizes. The HEXFRED HFA08TB60S is ideally suited for applications in power supplies (PFC boost diode) and power conversion systems (such as inverters), motor drives, and many other similar applications where high speed, high efficiency is needed.
**Terminals:** matte tin plated leads, solderable per J-STD-002
## **ABSOLUTE MAXIMUM RATINGS**
|**ABSOLUTE MAXIMUM RATINGS**|**ABSOLUTE MAXIMUM RATINGS**|**ABSOLUTE MAXIMUM RATINGS**|**ABSOLUTE MAXIMUM RATINGS**|**ABSOLUTE MAXIMUM RATINGS**|
|---|---|---|---|---|
|**PARAMETER**|**SYMBOL**|**TEST CONDITIONS**|**VALUES**|**UNITS**|
|Cathode to anode voltage|VR||600|V|
|Maximum continuous forward current|IF|TC= 100 °C|8|A|
|Single pulse forward current|IFSM||60||
|Maximum repetitive forward current|IFRM||24||
|Maximum power dissipation|PD|TC= 25 °C|36|W|
|||TC= 100 °C|14||
|Operatingjunction and storage temperature range|TJ, TStg||-55 to +150|°C|
Revision: 08-Oct-2024
Document Number: 96219
**1**
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
**VS-HFA08TB60S-M3**
www.vishay.com
## Vishay Semiconductors
|**ELECTRICAL SPECIFICATIONS**|**ELECTRICAL SPECIFICATIONS**|(TJ= 25 °C unless otherwise specified)|(TJ= 25 °C unless otherwise specified)|||||
|---|---|---|---|---|---|---|---|
|**PARAMETER**|**SYMBOL**|**TEST CONDITIONS**||**MIN.**|**TYP.**|**MAX.**|**UNITS**|
|Cathode to anode<br>breakdown voltage|VBR|IR= 100 μA||600|-|-|V|
|Maximum forward voltage|VFM|IF= 8.0 A|See fig. 1|-|1.4|1.7||
|||IF= 16 A||-|1.7|2.1||
|||IF= 8.0 A, TJ= 125 °C||-|1.4|1.7||
|Maximum reverse<br>leakage current|IRM|VR= VRrated<br>TJ= 125 °C, VR= 0.8 x VRrated|See fig. 2|-|0.3|5.0|µA|
|||||-|100|500||
|Junction capacitance|CT|VR= 200 V|See fig. 3|-|10|25|pF|
|Series inductance|LS|Measured lead to lead 5 mm from package body||-|8.0|-|nH|
## **DYNAMIC RECOVERY CHARACTERISTICS** (TJ = 25 °C unless otherwise specified)
|**DYNAMIC RECOVERY CHARACTERISTICS**(TJ= 25 °C unless otherwise specified)|**DYNAMIC RECOVERY CHARACTERISTICS**(TJ= 25 °C unless otherwise specified)|**DYNAMIC RECOVERY CHARACTERISTICS**(TJ= 25 °C unless otherwise specified)|**DYNAMIC RECOVERY CHARACTERISTICS**(TJ= 25 °C unless otherwise specified)|**DYNAMIC RECOVERY CHARACTERISTICS**(TJ= 25 °C unless otherwise specified)|**DYNAMIC RECOVERY CHARACTERISTICS**(TJ= 25 °C unless otherwise specified)|**DYNAMIC RECOVERY CHARACTERISTICS**(TJ= 25 °C unless otherwise specified)|**DYNAMIC RECOVERY CHARACTERISTICS**(TJ= 25 °C unless otherwise specified)|
|---|---|---|---|---|---|---|---|
|**PARAMETER**|**SYMBOL**|**TEST CONDITIONS**||**MIN.**|**TYP.**|**MAX.**|**UNITS**|
|Reverse recovery time<br>See fig. 5, 6|trr|IF= 1.0 A, dIF/dt = 200 A/μs, VR= 30 V||-|18|-|ns|
||trr1|TJ= 25 °C|IF= 8.0 A<br>dIF/dt = 200 A/μs<br>VR= 200 V|-|37|55||
||trr2|TJ= 125 °C||-|55|90||
|Peak recovery current|IRRM1|TJ= 25 °C||-|3.5|5.0|A|
||IRRM2|TJ= 125 °C||-|4.5|8.0||
|Reverse recovery charge<br>See fig. 7|Qrr1|TJ= 25 °C||-|65|138|nC|
||Qrr2|TJ= 125 °C||-|124|360||
|Peak rate of fall of<br>recovery current during tb<br>See fig. 8|dI(rec)M/dt1|TJ= 25 °C||-|240|-|A/μs|
||dI(rec)M/dt2|TJ= 125 °C||-|210|-||
## **THERMAL AND MECHANICAL SPECIFICATIONS**
|**THERMAL AND MECHANICAL SPECIFICATIONS**|**THERMAL AND MECHANICAL SPECIFICATIONS**|**THERMAL AND MECHANICAL SPECIFICATIONS**|**THERMAL AND MECHANICAL SPECIFICATIONS**|**THERMAL AND MECHANICAL SPECIFICATIONS**|**THERMAL AND MECHANICAL SPECIFICATIONS**|**THERMAL AND MECHANICAL SPECIFICATIONS**|
|---|---|---|---|---|---|---|
|**PARAMETER**|**SYMBOL**|**TEST CONDITIONS**|**MIN.**|**TYP.**|**MAX.**|**UNITS**|
|Lead temperature|Tlead|0.063" from case (1.6 mm) for 10 s|-|-|300|°C|
|Thermal resistance,<br>junction to case|RthJC||-|-|3.5|K/W|
|Thermal resistance,<br>junction to ambient|RthJA|Typical socket mount|-|-|80||
|Weight|||-|2.0|-|g|
|Marking device||Case style D2PAK (TO-263AB)|HFA08TB60S||||
Revision: 08-Oct-2024
Document Number: 96219
**2**
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
**VS-HFA08TB60S-M3**
www.vishay.com
## Vishay Semiconductors
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100 1000<br>TJ = 150 °C<br>100<br>TJ = 125 °C<br>10 10<br>TJ = 150 °C<br>T J = 125 ° C 1<br>T J = 25 °C<br>1 0.1<br>TJ = 25 °C<br>0.01<br>0.1 0.001<br>0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 0 100 200 300 400 500 600<br>VFM - Forward Voltage Drop (V) VR - Reverse Voltage (V)<br> - Reverse Current (µA)<br>IR<br> - Instantaneous Forward Current (A)<br>IF<br>**----- End of picture text -----**<br>
Fig. 1 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current
Fig. 2 - Typical Reverse Current vs. Reverse Voltage
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100<br>10 TJ = 25 °C<br>1<br>1 10 100 1000<br>VR - Reverse Voltage (V)<br> - Junction Capacitance (pF)<br>T<br>C<br>**----- End of picture text -----**<br>
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
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10<br> 1<br>P DM<br>D = 0.50 t1<br>0.1 D = D = 0.100.20 t2<br>Single pulse D = 0.05 Notes:<br>(thermal response) D = 0.02 1. Duty factor D = t 1 /t 2<br>D = 0.01 2. Peak TJ = PDM x ZthJC + TC<br>0.01<br>0.00001 0.0001 0.001 0.01 0.1 1<br>t1 - Rectangular Pulse Duration (s)<br>- Thermal Response<br>thJC<br>Z<br>**----- End of picture text -----**<br>
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
Revision: 08-Oct-2024
Document Number: 96219
**3**
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
**VS-HFA08TB60S-M3**
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www.vishay.com<br>**----- End of picture text -----**<br>
## Vishay Semiconductors
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80<br>I F = 16 A<br>IF = 8 A<br>60 I F = 4 A<br>40<br>20<br>VR = 200 V<br>TJ = 125 °C<br>TJ = 25 °C<br>0<br>100 1000<br> (ns)<br>trr<br>**----- End of picture text -----**<br>
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dIF/dt (A/µs)<br>**----- End of picture text -----**<br>
Fig. 5 - Typical Reverse Recovery Time vs. dIF/dt
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500<br>V R = 200 V<br>400 T T J J = 125 °C = 25 ° C<br>300 IF = 16 A<br>I F = 8 A<br>IF = 4 A<br>200<br>100<br>0<br>100 1000<br> (nC)<br>rr<br>Q<br>**----- End of picture text -----**<br>
**dIF/dt (A/µs)**
Fig. 7 - Typical Stored Charge vs. dIF/dt
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20<br>VR = 200 V<br>T J = 125 °C<br>TJ = 25 °C<br>15<br>IF = 16 A<br>10 I F = 8 A<br>IF = 4 A<br>5<br>0<br>100 1000<br>dIF/dt (A/µs)<br> (A)<br>Irr<br>**----- End of picture text -----**<br>
Fig. 6 - Typical Recovery Current vs. dIF/dt
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10 000<br>I F = 16 A<br>I F = 8 A<br>I F = 4 A<br>1000<br>VR = 200 V<br>T J = 125 °C<br>TJ = 25 °C<br>100<br>100 1000<br>/dt (A/µs)<br>(rec)M<br>dI<br>**----- End of picture text -----**<br>
**dIF/dt (A/µs)**
Fig. 8 - Typical dI(rec)M/dt vs. dIF/dt
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(3)<br>IF trr<br>ta tb<br>0<br>(4)<br>Qrr<br>(2)<br>IRRM 0.5 IRRM<br>di(rec)M/dt (5)<br>0.75 IRRM<br>(1) diF/dt<br>(1) diF/dt - rate of change of current (4) Qrr - area under curve defined by trr<br> through zero crossing and IRRM<br>(2) IRRM - peak reverse recovery current Qrr = t 2rr x IRRM<br>(3) t from zero crossing point of negative rr - reverse recovery time measured (5) di(rec)M/dt - peak rate of change of<br> going IF to point where a line passing current during tb portion of trr<br> through 0.75 IRRM and 0.50 IRRM<br> extrapolated to zero current.<br>**----- End of picture text -----**<br>
Fig. 9 - Reverse Recovery Waveform and Definitions
**4**
Revision: 08-Oct-2024
Document Number: 96219
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
**VS-HFA08TB60S-M3**
www.vishay.com
## Vishay Semiconductors
## **ORDERING INFORMATION TABLE**
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Device code VS- HF A 08 TB 60 S L -M3<br>1 2 3 4 5 6 7 8 9<br>**----- End of picture text -----**<br>
- **1** - Vishay Semiconductors product **2** - HEXFRED[®] family **3** - **4** - Current rating (08 = 8 A)
- Process designator: A = electron irradiated
- Current rating (08 = 8 A)
- - Package outline (TB = TO-220, 2 leads)
**5 6 7 8**
- Voltage rating (60 = 600 V)
- S = D[2] PAK (TO-263AB)
- • None = tube (50 pieces)
- L = tape and reel (left oriented)
- R = tape and reel (right oriented)
- **9** - Environmental digit:
- -M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free
|**ORDERING INFORMATION**(Example)|**ORDERING INFORMATION**(Example)|**ORDERING INFORMATION**(Example)|
|---|---|---|
|**PREFERRED P/N**|**BASE QUANTITY**|**PACKAGING DESCRIPTION**|
|VS-HFA08TB60S-M3|50|Antistatic plastic tube|
|VS-HFA08TB60SR-M3|800|13" diameter reel|
|VS-HFA08TB60SL-M3|800|13" diameter reel|
## **LINKS TO RELATED DOCUMENTS**
|**LINKS TO RELATED DOCUMENTS**|**LINKS TO RELATED DOCUMENTS**|**LINKS TO RELATED DOCUMENTS**|
|---|---|---|
|Dimensions||www.vishay.com/doc?96164|
|Part marking information||www.vishay.com/doc?95444|
|Packaging information||www.vishay.com/doc?96424|
|SPICE model||www.vishay.com/doc?96596|
Revision: 08-Oct-2024
Document Number: 96219
**5**
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
**Outline Dimensions**
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www.vishay.com
## Vishay Semiconductors
## **D[2] PAK**
## **DIMENSIONS** in millimeters and inches
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Conforms to JEDEC [®] outline D [2] PAK (SMD-220) B<br>A Pad layout<br>(2)(3) A (E)<br>c2 11.00<br>E MIN.<br>(0.43)<br>A<br>(3) L1 4<br>9.65<br>MIN.<br>(0.38)<br>(D1) (3)<br>Detail A<br>D 17.90 (0.70)<br>H 15.00 (0.625)<br>(2)<br>1 2 3<br>3.81<br>MIN.<br>L2 (0.15)<br>B B 2.32<br>MIN.<br>(0.08)<br>A<br>2.64 (0.103)<br>2 x b2 C E1 (3) 2.41 (0.096)<br>c<br>2 x b View A - A<br>0.010 M A M B ± 0.004 M B<br>2 x e<br>Base<br>Plating (4) Metal<br>H b1, b3<br>Gauge<br>plane<br>(c) c1 (4)<br>0° to 8° B<br>L Seating<br>plane<br>L3 A1<br>(b, b2)<br>Lead tip L4 Section B - B and C - C<br>Detail “A” Scale: None<br>Rotated 90 °CW<br>Scale: 8:1<br>**----- End of picture text -----**<br>
|**SYMBOL**|**MILLIMETERS**|**MILLIMETERS**|**INCHES**|**INCHES**|**NOTES**||**SYMBOL**|**MILLIMETERS**|**MILLIMETERS**|**INCHES**|**INCHES**|**NOTES**|
|---|---|---|---|---|---|---|---|---|---|---|---|---|
||**MIN.**|**MAX.**|**MIN.**|**MAX.**||||**MIN.**|**MAX.**|**MIN.**|**MAX.**||
|A|4.06|4.83|0.160|0.190|||D1|6.86|8.00|0.270|0.315|3|
|A1|0.00|0.254|0.000|0.010|||E|9.65|10.67|0.380|0.420|2, 3|
|b|0.51|0.99|0.020|0.039|||E1|7.90|8.80|0.311|0.346|3|
|b1|0.51|0.89|0.020|0.035|4||e|2.54 BSC||0.100 BSC|||
|b2|1.14|1.78|0.045|0.070|||H|14.61|15.88|0.575|0.625||
|b3|1.14|1.73|0.045|0.068|4||L|1.78|2.79|0.070|0.110||
|c|0.38|0.74|0.015|0.029|||L1|-|1.65|-|0.066|3|
|c1|0.38|0.58|0.015|0.023|4||L2|1.27|1.78|0.050|0.070||
|c2|1.14|1.65|0.045|0.065|||L3|0.25 BSC||0.010 BSC|||
|D|8.51|9.65|0.335|0.380|2||L4|4.78|5.28|0.188|0.208||
## **Notes**
- (1) Dimensioning and tolerancing per ASME Y14.5 M-1994
- (2) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outmost extremes of the plastic body
- (3) Thermal pad contour optional within dimension E, L1, D1 and E1
- (4) Dimension b1 and c1 apply to base metal only
- (5) Datum A and B to be determined at datum plane H
- (6) Controlling dimension: inches
- (7) Outline conforms to JEDEC® outline TO-263AB
Revision: 13-Jul-17
**1**
Document Number: 96164
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
**Legal Disclaimer Notice** Vishay
www.vishay.com
## **Disclaimer**
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer's technical experts. Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein.
Hyperlinks included in this datasheet may direct users to third-party websites. These links are provided as a convenience and for informational purposes only. Inclusion of these hyperlinks does not constitute an endorsement or an approval by Vishay of any of the products, services or opinions of the corporation, organization or individual associated with the third-party website. Vishay disclaims any and all liability and bears no responsibility for the accuracy, legality or content of the third-party website or for that of subsequent links.
Vishay products are not designed for use in life-saving or life-sustaining applications or any application in which the failure of the Vishay product could result in personal injury or death unless specifically qualified in writing by Vishay. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
_**© 2024 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED**_
Revision: 01-Jul-2024
**1**
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Updated at June 4, 2026
Vishay is a global leader in the manufacturing of discrete semiconductors and passive electronic components. Renowned for its exceptional quality and engineering expertise, the company produces highly reliable solutions that drive innovation across the industrial, automotive, telecommunications, and consumer electronics markets. From advanced factory automation to vehicle electrification, Vishay components provide the foundational building blocks for modern electronic design. The company's expansive portfolio is heavily focused on efficient power management, signal routing, and energy storage. Within its passive component lineup, Vishay is recognized for its extensive array of high-performance capacitors, including robust aluminium electrolytic, film, and polymer variants, alongside highly efficient power inductors. In the realm of discrete semiconductors, Vishay is a premier manufacturer of single and dual MOSFETs, as well as a vast selection of Schottky, Zener, and fast-recovery rectifier diodes designed for demanding power applications. Furthermore, Vishay delivers industry-leading circuit protection and thermal management solutions. With a broad offering of transient voltage suppressors (TVS diodes) and temperature-sensing NTC thermistors, these components are engineered to safeguard sensitive circuitry against both electrical and thermal overstress. By combining this vital mix of advanced discretes and passives, Vishay enables engineers to develop robust, space-saving, and highly resilient electronic systems.
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