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VS-HFA08TB60PBF
Fast / Ultrafast Diode, 600 V, 8 A, Single, 1.7 V, 55 ns, 60 A
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- Manufacturer: VISHAY
- Product type: Fast & Ultrafast Recovery Rectifier Diodes
- No. of Pins: 2 Pin
- Product Range: VS-HF
- Diode Case Style: TO-220AC
- Diode Configuration: Single
- Forward Voltage Max: 1.7V
- Forward Surge Current: 60A
- Reverse Recovery Time: 55ns
- Average Forward Current: 8A
- Operating Temperature Max: 150°C
- Repetitive Peak Reverse Voltage: 600V
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 0.94 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
Vishay Semiconductors ## **VS-HFA08TB60PbF, VS-HFA08TB60-N3** www.vishay.com ## **HEXFRED[®] Ultrafast Soft Recovery Diode, 8 A** ## **FEATURES** - Ultrafast and ultrasoft recovery - Very low IRRM and Qrr - Designed and qualified according to JEDEC[®] -JESD47 **==> picture [58 x 99] intentionally omitted <==** **----- Start of picture text -----**<br> TO-220AC<br>Base<br>cathode<br>2<br>1 3<br>Cathode Anode<br>**----- End of picture text -----**<br> - Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Available ## **BENEFITS** - Reduced RFI and EMI - Reduced power loss in diode and switching transistor - Higher frequency operation - Reduced snubbing - Reduced parts count ## **DESCRIPTION** ## **PRODUCT SUMMARY** |Package<br>IF(AV)|TO-220AC<br>8 A| |---|---| |VR|600 V| |VFat IF<br>trrtyp.|1.4 V<br>18 ns| |TJmax.|150 °C| |Diode variation|Single die| VS-HFA08TB60... is a state of the art ultrafast recovery diode. Employing the latest in epitaxial construction and advanced processing techniques it features a superb combination of characteristics which result in performance which is unsurpassed by any rectifier previously available. With basic ratings of 600 V and 8 A continuous current, the VS-HFA08TB60... is especially well suited for use as the companion diode for IGBTs and MOSFETs. In addition to ultrafast recovery time, the HEXFRED[®] product line features extremely low values of peak recovery current (IRRM) and does not exhibit any tendency to “snap-off” during the tb portion of recovery. The HEXFRED features combine to offer designers a rectifier with lower noise and significantly lower switching losses in both the diode and the switching transistor. These HEXFRED advantages can help to significantly reduce snubbing, component count and heatsink sizes. The HEXFRED VS-HFA08TB60... is ideally suited for applications in power supplies and power conversion systems (such as inverters), motor drives, and many other similar applications where high speed, high efficiency is needed. ## **ABSOLUTE MAXIMUM RATINGS** |**ABSOLUTE MAXIMUM RATINGS**|**ABSOLUTE MAXIMUM RATINGS**|**ABSOLUTE MAXIMUM RATINGS**|**ABSOLUTE MAXIMUM RATINGS**|**ABSOLUTE MAXIMUM RATINGS**| |---|---|---|---|---| |**PARAMETER**|**SYMBOL**|**TEST CONDITIONS**|**VALUES**|**UNITS**| |Cathode to anode voltage|VR||600|V| |Maximum continuous forward current|IF|TC= 100 °C|8|A| |Single pulse forward current|IFSM||60|| |Maximum repetitive forward current|IFRM||24|| |Maximum power dissipation|PD|TC= 25 °C|36|W| |||TC= 100 °C|14|| |Operating junction and storage temperature range|TJ, TStg||-55 to +150|°C| Document Number: 94047 Revision: 10-Jul-15 **1** For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **VS-HFA08TB60PbF, VS-HFA08TB60-N3** **==> picture [59 x 48] intentionally omitted <==** www.vishay.com ## Vishay Semiconductors |**ELECTRICAL SPECIFICATIONS**(TJ= 25 °C unless otherwise specified)|**ELECTRICAL SPECIFICATIONS**(TJ= 25 °C unless otherwise specified)|**ELECTRICAL SPECIFICATIONS**(TJ= 25 °C unless otherwise specified)|**ELECTRICAL SPECIFICATIONS**(TJ= 25 °C unless otherwise specified)||||| |---|---|---|---|---|---|---|---| |**PARAMETER**|**SYMBOL**|**TEST CONDITIONS**||**MIN.**|**TYP.**|**MAX.**|**UNITS**| |Cathode to anode<br>breakdown voltage|VBR|IR= 100 μA||600|-|-|V| |Maximum forward voltage|VFM|IF= 8.0 A|See fig. 1|-|1.4|1.7|| |||IF= 16 A||-|1.7|2.1|| |||IF= 8.0 A, TJ= 125 °C||-|1.4|1.7|| |Maximum reverse<br>leakage current|IRM|VR= VRrated<br>TJ= 125 °C, VR= 0.8 x VRrated|See fig. 2|-|0.3|5.0|μA| |||||-|100|500|| |Junction capacitance|CT|VR= 200 V|See fig. 3|-|10|25|pF| |Series inductance|LS|Measured lead to lead 5 mm from package body||-|8.0|-|nH| |**DYNAMIC RECOVERY CHARACTERISTICS**(TJ= 25 °C unless otherwise specified)|**DYNAMIC RECOVERY CHARACTERISTICS**(TJ= 25 °C unless otherwise specified)|**DYNAMIC RECOVERY CHARACTERISTICS**(TJ= 25 °C unless otherwise specified)|**DYNAMIC RECOVERY CHARACTERISTICS**(TJ= 25 °C unless otherwise specified)|**DYNAMIC RECOVERY CHARACTERISTICS**(TJ= 25 °C unless otherwise specified)|**DYNAMIC RECOVERY CHARACTERISTICS**(TJ= 25 °C unless otherwise specified)|**DYNAMIC RECOVERY CHARACTERISTICS**(TJ= 25 °C unless otherwise specified)|**DYNAMIC RECOVERY CHARACTERISTICS**(TJ= 25 °C unless otherwise specified)| |---|---|---|---|---|---|---|---| |**PARAMETER**|**SYMBOL**|**TEST CONDITIONS**||**MIN.**|**TYP.**|**MAX.**|**UNITS**| |Reverse recovery time|trr|IF= 1.0 A, dIF/dt = 200 A/μs, VR= 30 V||-|18|-|ns| ||trr1|TJ= 25 °C|IF= 8.0 A<br>dIF/dt = 200 A/μs<br>VR= 200 V|-|37|55|| ||trr2|TJ= 125 °C||-|55|90|| |Peak recovery current|IRRM1|TJ= 25 °C||-|3.5|5.0|A| ||IRRM2|TJ= 125 °C||-|4.5|8.0|| |Reverse recovery charge|Qrr1|TJ= 25 °C||-|65|138|nC| ||Qrr2|TJ= 125 °C||-|124|360|| |Peak rate of fall of recovery<br>current during tb|dI(rec)M/dt1|TJ= 25 °C||-|240|-|A/μs| ||dI(rec)M/dt2|TJ= 125 °C||-|210|-|| |**THERMAL - MECHANICAL SPECIFICATIONS**|**THERMAL - MECHANICAL SPECIFICATIONS**|**THERMAL - MECHANICAL SPECIFICATIONS**||||| |---|---|---|---|---|---|---| |**PARAMETER**|**SYMBOL**|**TEST CONDITIONS**|**MIN.**|**TYP.**|**MAX.**|**UNITS**| |Lead temperature|Tlead|0.063" from case (1.6 mm) for 10 s|-|-|300|°C| |Thermal resistance,<br>junction to case|RthJC||-|-|3.5|K/W| |Thermal resistance,<br>junction to ambient|RthJA|Typical socket mount|-|-|80|| |Thermal resistance,<br>case to heatsink|RthCS|Mounting surface, flat, smooth and greased|-|0.5|-|| |Weight|||-|2.0|-|g| ||||-|0.07|-|oz.| |Mounting torque|||6.0<br>(5.0)|-|12<br>(10)|kgf · cm<br>(lbf · in)| |Marking device||Case style TO-220AC|HFA08TB60|||| Revision: 10-Jul-15 Document Number: 94047 **2** For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **VS-HFA08TB60PbF, VS-HFA08TB60-N3** **==> picture [59 x 48] intentionally omitted <==** www.vishay.com ## Vishay Semiconductors **==> picture [204 x 167] intentionally omitted <==** **----- Start of picture text -----**<br> 100<br>10<br>1<br>TJ = 150 °C<br>T J = 125 °C<br>TJ = 25 °C<br>0.1<br>0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2<br>VFM - Forward Voltage Drop (V)<br> - Instantaneous Forward Current (A)<br>IF<br>**----- End of picture text -----**<br> Fig. 1 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current **==> picture [203 x 166] intentionally omitted <==** **----- Start of picture text -----**<br> 1000<br>TJ = 150 °C<br>100<br>TJ = 125 °C<br>10<br>1<br>0.1<br>TJ = 25 °C<br>0.01<br>0.001<br>0 100 200 300 400 500 600<br>VR - Reverse Voltage (V)<br> - Reverse Current (µA)<br>IR<br>**----- End of picture text -----**<br> Fig. 2 - Typical Reverse Current vs. Reverse Voltage **==> picture [206 x 166] intentionally omitted <==** **----- Start of picture text -----**<br> 100<br>T J = 25 °C<br>10<br>1<br>1 10 100 1000<br>VR - Reverse Voltage (V)<br> - Junction Capacitance (pF)<br>T<br>C<br>**----- End of picture text -----**<br> Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage **==> picture [406 x 166] intentionally omitted <==** **----- Start of picture text -----**<br> 10<br> 1<br>P DM<br>D = 0.50 t1<br>0.1 D = 0.20 D = 0.10 t2<br>Single pulse D = 0.05 Notes:<br>(thermal response) D = 0.02D = 0.01 1. Duty factor D = t 2. Peak TJ = PDM x Z1 /t thJC2 + TC<br>0.01<br>0.00001 0.0001 0.001 0.01 0.1 1<br>t1 - Rectangular Pulse Duration (s)<br>- Thermal Response<br>thJC<br>Z<br>**----- End of picture text -----**<br> Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics Revision: 10-Jul-15 Document Number: 94047 **3** For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **VS-HFA08TB60PbF, VS-HFA08TB60-N3** **==> picture [59 x 48] intentionally omitted <==** **==> picture [77 x 10] intentionally omitted <==** **----- Start of picture text -----**<br> www.vishay.com<br>**----- End of picture text -----**<br> **==> picture [204 x 167] intentionally omitted <==** **----- Start of picture text -----**<br> 80<br>I F = 16 A<br>IF = 8 A<br>60 I F = 4 A<br>40<br>20<br>VR = 200 V<br>TJ = 125 °C<br>TJ = 25 °C<br>0<br>100 1000<br>dIF/dt (A/µs)<br> (ns)<br>trr<br>**----- End of picture text -----**<br> Fig. 5 - Typical Reverse Recovery Time vs. dIF/dt **==> picture [206 x 167] intentionally omitted <==** **----- Start of picture text -----**<br> 20<br>VR = 200 V<br>T J = 125 °C<br>TJ = 25 °C<br>15<br>IF = 16 A<br>10 I F = 8 A<br>IF = 4 A<br>5<br>0<br>100 1000<br>dIF/dt (A/µs)<br> (A)<br>Irr<br>**----- End of picture text -----**<br> Fig. 6 - Typical Recovery Current vs. dIF/dt ## Vishay Semiconductors **==> picture [205 x 166] intentionally omitted <==** **----- Start of picture text -----**<br> 500<br>V R = 200 V<br>400 T T J J = 125 °C = 25 ° C<br>300 IF = 16 A<br>I F = 8 A<br>IF = 4 A<br>200<br>100<br>0<br>100 1000<br>dIF/dt (A/µs)<br> (nC)<br>rr<br>Q<br>**----- End of picture text -----**<br> Fig. 7 - Typical Stored Charge vs. dIF/dt **==> picture [204 x 167] intentionally omitted <==** **----- Start of picture text -----**<br> 10 000<br>I F = 16 A<br>I F = 8 A<br>I F = 4 A<br>1000<br>VR = 200 V<br>T J = 125 °C<br>TJ = 25 °C<br>100<br>100 1000<br>dIF/dt (A/µs)<br>/dt (A/µs)<br>(rec)M<br>dI<br>**----- End of picture text -----**<br> Fig. 8 - Typical dI(rec)M/dt vs. dIF/dt Revision: 10-Jul-15 Document Number: 94047 **4** For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **VS-HFA08TB60PbF, VS-HFA08TB60-N3** **==> picture [59 x 48] intentionally omitted <==** www.vishay.com ## Vishay Semiconductors **==> picture [240 x 136] intentionally omitted <==** **----- Start of picture text -----**<br> VR = 200 V<br>0.01 Ω<br>L = 70 μH<br>D.U.T.<br>D<br>dIF/dt<br>adjust<br>G IRFP250<br>S<br>**----- End of picture text -----**<br> Fig. 9 - - Reverse Recovery Parameter Test Circuit **==> picture [274 x 221] intentionally omitted <==** **----- Start of picture text -----**<br> (3)<br>IF trr<br>ta tb<br>0<br>(4)<br>Qrr<br>(2)<br>IRRM 0.5 IRRM<br>dI(rec)M/dt (5)<br>0.75 IRRM<br>(1) dIF/dt<br>(1) dIF/dt - rate of change of current (4) Qrr - area under curve defined by trr<br> through zero crossing and IRRM<br>(2) IRRM - peak reverse recovery current Qrr = t 2rr x IRRM<br>(3) t from zero crossing point of negative rr - reverse recovery time measured (5) dI(rec)M/dt - peak rate of change of<br> going IF to point where a line passing current during tb portion of trr<br> through 0.75 IRRM and 0.50 IRRM<br> extrapolated to zero current.<br>**----- End of picture text -----**<br> Fig. 10 - Reverse Recovery Waveform and Definitions Revision: 10-Jul-15 Document Number: 94047 **5** For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **VS-HFA08TB60PbF, VS-HFA08TB60-N3** **==> picture [59 x 48] intentionally omitted <==** www.vishay.com Vishay Semiconductors ## **ORDERING INFORMATION TABLE** |**Device code**|**VS-**|**VS-**||**HF**<br>**A**<br>**08**<br>**TB**|**HF**<br>**A**<br>**08**<br>**TB**|**60**|**PbF**|| |---|---|---|---|---|---|---|---|---| |||1||5<br>3<br>2<br>4||6|7|| ||**1**||-||Vishay Semiconductors product|||| ||**2**||-||HEXFRED®family|||| ||**3**||-<br>Electron irradiated|||||| ||**4**||-||Current rating (08 = 8 A)|||| ||**4**<br>**5**||-||Package:|||| ||**4**||||TB = TO-220AC|||| ||**6**||-||Voltage rating (60 = 600 V)|||| ||**7**||-||Environmental digit:|||| ||||||PbF = lead (Pb)-free and RoHS-compliant|||| ||||||-N3 = halogen-free, RoHS-compliant, and|||totally lead (Pb)-free| ## **ORDERING INFORMATION** (Example) |**ORDERING INFORMATION**(Example)|**ORDERING INFORMATION**(Example)|**ORDERING INFORMATION**(Example)|**ORDERING INFORMATION**(Example)|**ORDERING INFORMATION**(Example)|**ORDERING INFORMATION**(Example)|**ORDERING INFORMATION**(Example)| |---|---|---|---|---|---|---| |**PREFERRED P/N**|**QUANTITY PER T/R**||**MINIMUM ORDER QUANTITY**|||**PACKAGING DESCRIPTION**| |VS-HFA08TB60PbF|50||1000|||Antistatic plastic tube| |VS-HFA08TB60-N3|50||1000|||Antistatic plastic tube| |||||||| |||**LINKS TO RELATED DOCUMENTS**||||| |Dimensions|||||www.vishay.com/doc?95221|| |Part marking information||TO-220ACPbF|||www.vishay.com/doc?95224|| |||TO-220AC-N3|||www.vishay.com/doc?95068|| Revision: 10-Jul-15 Document Number: 94047 **6** For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **Outline Dimensions** **==> picture [59 x 48] intentionally omitted <==** ## Vishay Semiconductors ## **TO-220AC** ## **DIMENSIONS** in millimeters and inches **==> picture [501 x 231] intentionally omitted <==** **----- Start of picture text -----**<br> B<br>Seating 1 2 3<br>(6) E A Ø P A Aplane D D L1<br>E2 (7) 0.014 M B A M A1 E Thermal pad C C<br>Q<br>(6) H1 H1<br>(7)<br>D2 (6) 2 x b2 2 x b<br>(6) D Detail B<br>Detail B<br>θ<br>D1<br>1 2 3 Lead tip<br>L3<br>C<br>E1 (6)<br>L4 Lead assignments<br>L Diodes<br>1 + 2 - Cathode<br>3 - Anode<br>c A Conforms to JEDEC outline TO-220AC<br>e1 View A - A<br>A2<br>0.015 M B A M<br>**----- End of picture text -----**<br> |**SYMBOL**|**MILLIMETERS**|**MILLIMETERS**|**INCHES**|**INCHES**|**NOTES**||**SYMBOL**|**MILLIMETERS**|**MILLIMETERS**|**INCHES**<br><br>**MIN.**<br>**MAX.**|**INCHES**<br><br>**MIN.**<br>**MAX.**|**NOTES**| |---|---|---|---|---|---|---|---|---|---|---|---|---| ||**MIN.**|**MAX.**|**MIN.**|**MAX.**||||**MIN.**|**MAX.**|**MIN.**||| |A|4.25|4.65|0.167|0.183|||E1|6.86|8.89|0.270|0.350|6| |A1|1.14|1.40|0.045|0.055|||E2|-|0.76|-|0.030|7| |A2|2.56|2.92|0.101|0.115|||e|2.41|2.67|0.095|0.105|| |b|0.69|1.01|0.027|0.040|||e1|4.88|5.28|0.192|0.208|| |b1|0.38|0.97|0.015|0.038|4||H1|6.09|6.48|0.240|0.255|6, 7| |b2|1.20|1.73|0.047|0.068|||L|13.52|14.02|0.532|0.552|| |b3|1.14|1.73|0.045|0.068|4||L1|3.32|3.82|0.131|0.150|2| |c|0.36|0.61|0.014|0.024|||L3|1.78|2.13|0.070|0.084|| |c1|0.36|0.56|0.014|0.022|4||L4|0.76|1.27|0.030|0.050|2| |D|14.85|15.25|0.585|0.600|3||Ø P|3.54|3.73|0.139|0.147|| |D1|8.38|9.02|0.330|0.355|||Q|2.60|3.00|0.102|0.118|| |D2|11.68|12.88|0.460|0.507|6|||90° to 93°||90° to 93°||| |E|10.11|10.51|0.398|0.414|3, 6|||||||| ## **Notes** > (1) Dimensioning and tolerancing as per ASME Y14.5M-1994 - (2) Lead dimension and finish uncontrolled in L1 > (3) Dimension D, D1 and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body - (4) Dimension b1, b3 and c1 apply to base metal only - (5) Controlling dimension: inches - (6) Thermal pad contour optional within dimensions E, H1, D2 and E1 > (7) Dimension E2 x H1 define a zone where stamping and singulation irregularities are allowed - (8) Outline conforms to JEDEC TO-220, D2 (minimum) where dimensions are derived from the actual package outline Document Number: 95221 For technical questions within your region, please contact one of the following: Revision: 07-Mar-11 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 1 **Legal Disclaimer Notice** Vishay www.vishay.com **==> picture [59 x 48] intentionally omitted <==** ## **Disclaimer** ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. ## **Material Category Policy** **Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant.** **Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.** **Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards.** Revision: 02-Oct-12 Document Number: 91000 **1**
Updated at February 9, 2023
Vishay is a global leader in the manufacturing of discrete semiconductors and passive electronic components. Renowned for its exceptional quality and engineering expertise, the company produces highly reliable solutions that drive innovation across the industrial, automotive, telecommunications, and consumer electronics markets. From advanced factory automation to vehicle electrification, Vishay components provide the foundational building blocks for modern electronic design. The company's expansive portfolio is heavily focused on efficient power management, signal routing, and energy storage. Within its passive component lineup, Vishay is recognized for its extensive array of high-performance capacitors, including robust aluminium electrolytic, film, and polymer variants, alongside highly efficient power inductors. In the realm of discrete semiconductors, Vishay is a premier manufacturer of single and dual MOSFETs, as well as a vast selection of Schottky, Zener, and fast-recovery rectifier diodes designed for demanding power applications. Furthermore, Vishay delivers industry-leading circuit protection and thermal management solutions. With a broad offering of transient voltage suppressors (TVS diodes) and temperature-sensing NTC thermistors, these components are engineered to safeguard sensitive circuitry against both electrical and thermal overstress. By combining this vital mix of advanced discretes and passives, Vishay enables engineers to develop robust, space-saving, and highly resilient electronic systems.
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