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VS-GBPC2508A
Bridge Rectifier, Single Phase, 800 V, 25 A, Module, 4 Pins, 1.1 V
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: VISHAY
- Product type: Bridge Rectifier Diodes
- No. of Phases:Single Phase; Repetitive Reverse Voltage Vrrm Max:800V; Forward Current If(AV):25A; Bridge Rectifier Case Style:Module; Forward Voltage VF Max:1.1V; No. of Pins:4Pins; Operating
- SVHC: Lead (08-Jul-2021)
- No. of Pins: 4Pins
- No. of Phases: Single Phase
- Product Range: VS-GBPC Series
- Forward Voltage Max: 1.1V
- Forward Surge Current: 400A
- Average Forward Current: 25A
- Bridge Rectifier Mounting: Surface Mount
- Operating Temperature Max: 150°C
- Bridge Rectifier Case Style: Module
- Repetitive Peak Reverse Voltage: 800V
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 4.13 € |
| Current stock | 100+ |
| Lead time | 22 days |
Datasheet
**VS-GBPC.. Series** www.vishay.com ## Vishay Semiconductors ## **Single Phase Bridge Rectifier, 25 A, 35 A** ## **FEATURES** - Universal, 3 way terminals: push-on, wrap around or solder - High thermal conductivity package, electrically insulated case - Positive polarity symbol molded on the plastic case - Center hole fixing - Glass passivated diode chips - Excellent power/volume ratio **GBPC...A GBPC...W** - Nickel plated terminals solderable using lead (Pb)-free solder; Solder Alloy Sn/Ag/Cu (SAC305); Solder temperature 260 °C to 275 °C - Wire lead version available - UL E300359 approved - Designed and qualified for industrial and consumer level |**PRIMARY CHARACTERISTICS**|**PRIMARY CHARACTERISTICS**| |---|---| |IO|25 A, 35 A| |VRRM|200 V to 1200 V| |Package|GBPC...A, GBPC...W| |Circuit configuration|Single phase bridge| - Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 ## **DESCRIPTION / APPLICATIONS** A range of extremely compact, encapsulated single phase bridge rectifiers offering efficient and reliable operation. They are intended for use in general purpose and instrumentation applications. ## **MAJOR RATINGS AND CHARACTERISTICS** |**MAJOR RATINGS AND CHARACTERISTICS**|**MAJOR RATINGS AND CHARACTERISTICS**|**MAJOR RATINGS AND CHARACTERISTICS**|**MAJOR RATINGS AND CHARACTERISTICS**|**MAJOR RATINGS AND CHARACTERISTICS**| |---|---|---|---|---| |**SYMBOL**|**CHARACTERISTICS**|**VALUES**<br>**GBPC25**|**VALUES**<br>**GBPC35**|**UNITS**| |IO||25|35|A| ||TC|60|55|°C| |IFSM|50 Hz|400|475|A| ||60 Hz|420|500|| |I2t|50 Hz|790|1130|A2s| ||60 Hz|725|1030|| |VRRM|Range|200 to 1200||V| |TJ||-55 to +150||°C| ## **ELECTRICAL SPECIFICATIONS** ## **VOLTAGE RATINGS** |**VOLTAGE RATINGS**|**VOLTAGE RATINGS**|**VOLTAGE RATINGS**|**VOLTAGE RATINGS**|**VOLTAGE RATINGS**|**VOLTAGE RATINGS**| |---|---|---|---|---|---| |**TYPE NUMBER**|**VOLTAGE**<br>**CODE**|**VRRM, MAXIMUM**<br>**REPETITIVE PEAK AC**<br>**REVERSE VOLTAGE**<br>**TJ = TJ MAXIMUM**<br>**V**|**VRSM, MAXIMUM**<br>**NON-REPETITIVE PEAK AC**<br>**REVERSE VOLTAGE**<br>**TJ = TJ MAXIMUM**<br>**V**|**IRRM MAXIMUM**<br>**AT RATED VRRM**<br>**TJ = TJ MAXIMUM**<br>**mA**|**IRRM MAXIMUM**<br>**DC REVERSE**<br>**CURRENT**<br>**AT TJ = 125 °C**<br>**μA**| |VS-GBPC25..A(1)<br>VS-GBPC35..A(1)<br>VS-GBPC25..W<br>VS-GBPC35..W|02|200|275|2|500| ||04|400|500||| ||06|600|725||| ||08|800|900||| ||10|1000|1100||| ||12|1200|1300||| ## **Note** > (1) See Ordering Information table at the end of datasheet Revision: 10-Oct-2018 Document Number: 93575 **1** For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **VS-GBPC.. Series** Vishay Semiconductors **==> picture [59 x 48] intentionally omitted <==** www.vishay.com ## **FORWARD CONDUCTION CONDUCTION** |**FORWARD CONDUCTION CONDUCTION**|**FORWARD CONDUCTION CONDUCTION**|**FORWARD CONDUCTION CONDUCTION**|**FORWARD CONDUCTION CONDUCTION**|**FORWARD CONDUCTION CONDUCTION**|**FORWARD CONDUCTION CONDUCTION**|**FORWARD CONDUCTION CONDUCTION**|**FORWARD CONDUCTION CONDUCTION**| |---|---|---|---|---|---|---|---| |**PARAMETER**|**SYMBOL**|**TEST CONDITIONS**|||**VALUES**<br>**GBPC25**|**VALUES**<br>**GBPC35**|**UNITS**| |Maximum DC output current<br>at case temperature|IO|Resistive or inductive load|||25|35|A| |||Capacitive load|||20|28|| ||||||60|55|°C| |Maximum peak, one-cycle<br>non-repetitive forward current|IFSM|t = 10 ms|No voltage<br>reapplied|Initial TJ= TJmaximum|400|475|A| |||t = 8.3 ms|||420|500|| |||t = 10 ms|100 % VRRM<br>reapplied||335|400|| |||t = 8.3 ms|||350|420|| |Maximum I2t for fusing|I2t|t = 10 ms|No voltage<br>reapplied||790|1130|A2s| |||t = 8.3 ms|||725|1030|| |||t = 10 ms|100 % VRRM<br>reapplied||560|800|| |||t = 8.3 ms|||512|730|| |Maximum I2t for fusing|I2t|I2t for time tx= I2t xtx; 0.1tx 10 ms, VRRM= 0 V|||7.9|11.3|kA2s| |Low level of threshold voltage|VF(TO)1|(16.7 % xx IF(AV) < I <x IF(AV)), TJmaximum|||0.76|0.77|V| |High level of threshold voltage|VF(TO)2|(I >x IF(AV)), TJmaximum|||0.89|0.92|| |Low level forward slope resistance|rt1|(16.7 % xx IF(AV) < I <x IF(AV)), TJmaximum|||8.2|4.852|m| |High level forward slope resistance|rt2|(I >x IF(AV)), TJmaximum|||6.8|3.867|| |Maximum forward voltage drop|VFM|TJ= 25 °C, IFM= IFavg (arm)|||1.1|1.1|V| |Maximum DC reverse current|IRRM|TJ= 25 °C, per diode at VRRM|||5.0||μA| |RMS isolation voltage base plate|VINS|f = 50 Hz, t = 1 s|||2700||V| ## **THERMAL AND MECHANICAL SPECIFICATIONS** |**THERMAL AND MECHANICAL SPECIFICATIONS**|**THERMAL AND MECHANICAL SPECIFICATIONS**|**THERMAL AND MECHANICAL SPECIFICATIONS**|**THERMAL AND MECHANICAL SPECIFICATIONS**|**THERMAL AND MECHANICAL SPECIFICATIONS**|**THERMAL AND MECHANICAL SPECIFICATIONS**| |---|---|---|---|---|---| |**PARAMETER**|**SYMBOL**|**TEST CONDITIONS**|**VALUES**<br>**GBPC25**|**VALUES**<br>**GBPC35**|**UNITS**| |Junction and storage temperature range|TJ, TStg||-55 to +150||°C| |Maximum thermal resistance,<br>junction to case per bridge|RthJC|DC operation|1.7|1.4|K/W| |Maximum thermal resistance,<br>case to heatsink|RthCS|Mounting surface, smooth, flat and greased|0.2||| |Approximate weight|||16||g| |Mounting torque ± 10 %||Bridge to heatsink|2.0||N · m<br>(lbf · in)| **==> picture [203 x 183] intentionally omitted <==** **----- Start of picture text -----**<br> 150<br>140 GBPC25.. Series<br>130<br>120<br>110<br>180 °<br>100<br>(Rect)<br>90<br>80 180 °<br>70 (Sine)<br>60<br>50<br>0 5 10 15 20 25 30<br>Average Forward Current (A)<br>Fig. 1 - Current Ratings Characteristics<br>Maximum Allowable Case Temperature (°C)<br>**----- End of picture text -----**<br> **==> picture [203 x 183] intentionally omitted <==** **----- Start of picture text -----**<br> 1000<br>100<br>TJ = 25 °C<br>10 TJ = 150 °C<br>GBPC25.. Series<br>1<br>0.5 1 1.5 2 2.5<br>Instantaneous Forward Voltage (V)<br>Fig. 2 - Forward Voltage Drop Characteristics<br>Instantaneous Forward Current (A)<br>**----- End of picture text -----**<br> Revision: 10-Oct-2018 Document Number: 93575 **2** For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **VS-GBPC.. Series** www.vishay.com Vishay Semiconductors **==> picture [59 x 48] intentionally omitted <==** **==> picture [366 x 183] intentionally omitted <==** **----- Start of picture text -----**<br> 50<br>180°<br>(Sine)<br>40<br>180°<br>(Rect)<br>30<br>20<br>GBPC25.. Series<br>10 T = 150 °C J<br>0<br>0 5 10 15 20 25 50 75 100<br>Average Forward Current (A) Maximum Allowable Ambient Temperature °C<br>Fig. 3 - Total Power Loss Characteristics<br>3 K/W<br>2 K/W<br>R = 0.7 K/W - Delta R<br>1 K/W<br>thSA<br>Maximum Average Forward Power Loss (W)<br>**----- End of picture text -----**<br> **==> picture [206 x 169] intentionally omitted <==** **----- Start of picture text -----**<br> 400<br>At any rated load condition and with rated<br>VRRM applied following surge<br>350 Initial T J = 150 °C<br>at 60 Hz 0.0083 s<br>at 50 Hz 0.0100 s<br>300<br>250<br>200<br>150<br>GBPC25.. Series<br>100<br>1 10 100<br>Number of Equal Amplitude<br>Half Cycle Current Pulses (N)<br>Peak Half Sine Wave Forward Current (A)<br>**----- End of picture text -----**<br> Fig. 4 - Maximum Non-Repetitive Surge Current **==> picture [206 x 183] intentionally omitted <==** **----- Start of picture text -----**<br> 400<br>Maximum non repetitive surge current<br>versus pulse train duration.<br>350 Initial TJ = 150 °C<br>No voltage reapplied<br>300 Rated V reapplied RRM<br>250<br>200<br>150<br>100 GBPC25.. Series<br>50<br>0.01 0.1 1<br>Pulse Train Duration (s)<br>Fig. 5 - Maximum Non-Repetitive Surge Current<br>Peak Half Sine Wave Forward Current (A)<br>**----- End of picture text -----**<br> **==> picture [201 x 388] intentionally omitted <==** **----- Start of picture text -----**<br> 150<br>140 GBPC35.. Series<br>130<br>120<br>110<br>100<br>180 °<br>90<br>(Rect)<br>80<br>70 180 °<br>60 (Sine)<br>50<br>40<br>0 10 20 30 40<br>Average Forward Current (A)<br>Fig. 6 - Current Ratings Characteristics<br>1000<br>100<br>T J = 25 °C<br>10 TJ = 150 °C<br>GBPC35.. Series<br>1<br>0.5 1 1.5 2 2.5 3<br>Instantaneous Forward Voltage (V)<br>Fig. 7 - Forward Voltage Drop Characteristics<br>Maximum Allowable Case Temperature (°C)<br>Instantaneous Forward Current (A)<br>**----- End of picture text -----**<br> Revision: 10-Oct-2018 Document Number: 93575 **3** For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **VS-GBPC.. Series** www.vishay.com Vishay Semiconductors **==> picture [59 x 48] intentionally omitted <==** **==> picture [334 x 163] intentionally omitted <==** **----- Start of picture text -----**<br> 80<br>70 180°<br>(Sine)<br>60 180°<br>(Rect)<br>50<br>40<br>30<br>20<br>GBPC35.. Series<br>10 T J = 150 °C<br>0<br>0 5 10 15 20 25 30 35 50 75 100<br>Average Forward Current (A) Maximum Allowable Ambient Temperature °C<br>3 K/W<br>2 K/W<br>0.7 K/W<br>1 K/W<br>R<br>thSA<br> = 0.5 K/W - Delta R<br>**----- End of picture text -----**<br> Fig. 8 - Total Power Loss Characteristics **==> picture [203 x 169] intentionally omitted <==** **----- Start of picture text -----**<br> 450<br>At any rated load condition and with<br>400 rated Vrrm applied following surge.<br>Initial TJ = 150 °C<br>at 60 Hz 0.0083 s<br>350 at 50 Hz 0.0100 s<br>300<br>250<br>200<br>150<br>GBPC35.. Series<br>100<br>1 10 100<br>Number of Equal Amplitude<br>Half Cycle Current Pulses (N)<br>Peak Half Sine Wave Forward Current (A)<br>**----- End of picture text -----**<br> Fig. 9 - Maximum Non-Repetitive Surge Current **==> picture [176 x 163] intentionally omitted <==** **----- Start of picture text -----**<br> 500<br>Maximum non repetitive surge current<br>450 versus pulse train duration.<br>Initial TJ = 150°C<br>400 No voltage reapplied<br>rated Vrrm reapplied<br>350<br>300<br>250<br>200<br>150 GBPC35.. Series<br>100<br>0.01 0.1 1<br>Pulse Train Duration (s)<br>**----- End of picture text -----**<br> Fig. 10 - Maximum Non-Repetitive Surge Current **==> picture [203 x 370] intentionally omitted <==** **----- Start of picture text -----**<br> 10<br>Steady state value<br>R = 1.7 K/WthJC<br>(DC operation)<br>1<br>0.1<br>0.01<br>GBPC25.. Series<br>0.001<br>0.001 0.01 0.1 1 10 100<br>Square Wave Pulse Duration (s)<br>Fig. 11 - Thermal Impedance ZthJC CharacteristicthJC Characteristic Characteristic<br>10<br>Steady state value<br>R = 1.4 K/WthJC<br>(DC Operation)<br>1<br>0.1<br>0.01<br>GBPC35.. Series<br>0.001<br>0.001 0.01 0.1 1 10 100<br>Square Wave Pulse Duration (s)<br> (K/W)<br>thJC<br>Transient Thermal Impedance Z<br> (K/W)<br> thJC<br>Transient Thermal Impedance Z<br>**----- End of picture text -----**<br> Fig. 11 - Thermal Impedance ZthJC CharacteristicthJC Characteristic Characteristic Fig. 12 - Thermal Impedance ZthJC Characteristic Revision: 10-Oct-2018 Document Number: 93575 **4** For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **VS-GBPC.. Series** Vishay Semiconductors **==> picture [59 x 48] intentionally omitted <==** www.vishay.com ## **ORDERING INFORMATION TABLE** |**Device code**|**VS-**|**VS-**|||**GBPC**<br>**35**<br>**12**<br>**A**|| |---|---|---|---|---|---|---| ||1||||3<br>2<br>4<br>5|| ||**1**||-||Vishay Semiconductors product|| ||**2**||-||Circuit configuration:|| ||**3**<br>**4**||-<br>-||Current rating code<br>Voltage code x 100 = VRRM<br>Single phase bridge coding|25 = 25 A (average)<br>35 = 35 A (average)| ||**5**||-||Diode bridge rectifier:|| ||||||A = standard fast-on terminal|| ||||||W = wire lead|| ## **CIRCUIT CONFIGURATION** **==> picture [506 x 153] intentionally omitted <==** **----- Start of picture text -----**<br> (+)<br>D1 D3<br>AC1<br>AC2<br>D4 D2<br>(-)<br>LINKS TO RELATED DOCUMENTS<br>Dimensions www.vishay.com/doc?95331<br>**----- End of picture text -----**<br> Document Number: 93575 Revision: 10-Oct-2018 **5** For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **Outline Dimensions** Vishay Semiconductors **==> picture [59 x 48] intentionally omitted <==** www.vishay.com ## **GBPC** ## **DIMENSIONS FOR GBPC...A** in millimeters **==> picture [213 x 276] intentionally omitted <==** **----- Start of picture text -----**<br> 0.8 ± 0.1 6.35 ± 0.03 (4 x)<br>Ø 2.4<br>7.6 ± 0.2<br>28.6 ± 0.1<br>17.9 ± 0.2<br>AC2<br>28.6 ± 0.1<br>16.4 ± 0.2<br>14.2 ± 0.2<br>AC1<br>Ø 5.3 16.4 ± 0.2<br>19 ± 1<br>**----- End of picture text -----**<br> ## **DIMENSIONS FOR GBPC...W** in millimeters **==> picture [180 x 280] intentionally omitted <==** **----- Start of picture text -----**<br> 1.0 (4 x)<br>33 ± 1<br>7.6 ± 0.2<br>28.6 ± 0.1<br>17.9 ± 0.2<br>5.3 ± 0.2<br>AC2<br>17.9 ± 0.2 Ø 5.3 28.6 ± 0.1<br>AC1<br>11.4 ± 0.2 12.2 ± 0.2<br>**----- End of picture text -----**<br> **1** Revision: 27-May-15 Document Number: 95331 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **Legal Disclaimer Notice** Vishay www.vishay.com **==> picture [59 x 48] intentionally omitted <==** ## **Disclaimer** ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. _**© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED**_ Revision: 08-Feb-17 Document Number: 91000 **1**
Updated at June 4, 2026
Vishay is a global leader in the manufacturing of discrete semiconductors and passive electronic components. Renowned for its exceptional quality and engineering expertise, the company produces highly reliable solutions that drive innovation across the industrial, automotive, telecommunications, and consumer electronics markets. From advanced factory automation to vehicle electrification, Vishay components provide the foundational building blocks for modern electronic design. The company's expansive portfolio is heavily focused on efficient power management, signal routing, and energy storage. Within its passive component lineup, Vishay is recognized for its extensive array of high-performance capacitors, including robust aluminium electrolytic, film, and polymer variants, alongside highly efficient power inductors. In the realm of discrete semiconductors, Vishay is a premier manufacturer of single and dual MOSFETs, as well as a vast selection of Schottky, Zener, and fast-recovery rectifier diodes designed for demanding power applications. Furthermore, Vishay delivers industry-leading circuit protection and thermal management solutions. With a broad offering of transient voltage suppressors (TVS diodes) and temperature-sensing NTC thermistors, these components are engineered to safeguard sensitive circuitry against both electrical and thermal overstress. By combining this vital mix of advanced discretes and passives, Vishay enables engineers to develop robust, space-saving, and highly resilient electronic systems.
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