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VS-ETU3006S-M3
Fast / Ultrafast Diode, 600 V, 30 A, Single, 2 V, 45 ns, 200 A
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- Manufacturer: VISHAY
- Product type: Fast & Ultrafast Recovery Rectifier Diodes
- Repetitive Reverse Voltage Vrrm Max:600V; Forward Current If(AV):30A; Diode Configuration:Single; Forward Voltage VF Max:2V; Reverse Recovery Time trr Max:45ns; Forward Surge Current
- SVHC: Lead (04-Feb-2026)
- No. of Pins: 3 Pin
- Product Range: VS-ET
- Qualification: -
- Diode Case Style: TO-263AB
- Diode Configuration: Single
- Forward Voltage Max: 2V
- Forward Surge Current: 200A
- Reverse Recovery Time: 45ns
- Average Forward Current: 30A
- Operating Temperature Max: 175°C
- Repetitive Peak Reverse Voltage: 600V
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 1.03 € |
| Current stock | 1000+ |
| Lead time | 30 days |
Datasheet
**VS-ETU3006S-M3, VS-ETU3006-1-M3**
## VISHAY, ~~—~~
www.vishay.com
## Vishay Semiconductors
## **Ultrafast Rectifier, 30 A FRED Pt[®]**
**==> picture [219 x 211] intentionally omitted <==**
**----- Start of picture text -----**<br>
2<br>1<br>> >?<br>1<br>3<br>2<br>D [2] PAK (TO-263AB) 3 TO-262AA<br>Base<br>cathode<br>2 2<br>an 1 3 1 3<br>N/C Anode N/C Anode<br>VS-ETU3006S-M3 VS-ETU3006-1-M3<br>**----- End of picture text -----**<br>
## **PRIMARY CHARACTERISTICS**
|**PRIMARY CHARACTERISTICS**|**PRIMARY CHARACTERISTICS**|
|---|---|
|IF(AV)|30 A|
|VR|600 V|
|VFat IF|1.15 V|
|trr(typ.)|30 ns|
|TJmax.|175 °C|
|Package|D2PAK (TO-263AB), TO-262AA|
|Circuit configuration|Single|
## **FEATURES**
## :
- Low forward voltage drop
- Ultrafast recovery time
- 175 °C operating junction temperature
- Low leakage current
- Designed and qualified according to JEDEC[®] -JESD 47
- Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C
- Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
## **DESCRIPTION**
Ultralow VF, soft-switching ultrafast rectifiers optimized for discontinuous (Critical) mode (DCM) power factor correction (PFC).
The minimized conduction loss, optimized stored charge and low recovery current minimized the switching losses and reduce over dissipation in the switching element and snubbers.
The device is also intended for use as a freewheeling diode in power supplies and other power switching applications.
## **APPLICATIONS**
AC/DC SMPS 70 W to 400 W
e.g. laptop and printer AC adaptors, desktop PC, TV and monitor, games units, and DVD AC/DC power supplies.
## **ABSOLUTE MAXIMUM RATINGS**
|**ABSOLUTE MAXIMUM RATINGS**|**ABSOLUTE MAXIMUM RATINGS**|**ABSOLUTE MAXIMUM RATINGS**|**ABSOLUTE MAXIMUM RATINGS**|**ABSOLUTE MAXIMUM RATINGS**|
|---|---|---|---|---|
|**PARAMETER**|**SYMBOL**|**TEST CONDITIONS**|**MAX.**|**UNITS**|
|Repetitive peak reverse voltage|VRRM||600|V|
|Average rectified forward current|IF(AV)|TC= 113 °C|30|A|
|Non-repetitive peak surge current|IFSM|TC= 25 °C|200||
|Operatingjunction and storage temperatures|TJ, TStg||-65 to +175|°C|
|**ELECTRICAL SPECIFICATIONS**(TJ= 25 °C unless otherwise specified)<br>~~ee~~|**ELECTRICAL SPECIFICATIONS**(TJ= 25 °C unless otherwise specified)<br>~~ee~~|**ELECTRICAL SPECIFICATIONS**(TJ= 25 °C unless otherwise specified)<br>~~ee~~|**ELECTRICAL SPECIFICATIONS**(TJ= 25 °C unless otherwise specified)<br>~~ee~~|**ELECTRICAL SPECIFICATIONS**(TJ= 25 °C unless otherwise specified)<br>~~ee~~|**ELECTRICAL SPECIFICATIONS**(TJ= 25 °C unless otherwise specified)<br>~~ee~~|**ELECTRICAL SPECIFICATIONS**(TJ= 25 °C unless otherwise specified)<br>~~ee~~|
|---|---|---|---|---|---|---|
|**PARAMETER**<br>~~ee~~<br>~~TN~~|**SYMBOL**<br>~~ee~~|**TEST CONDITIONS**<br>~~ee~~<br>~~**e**e~~|**MIN.**<br>~~ee~~<br>~~ee~~|**TYP.**<br>~~ee~~<br>~~ee~~|**MAX.**<br>~~ee~~|**UNITS**<br>~~ee~~|
|Breakdown voltage,<br>blockingvoltage<br>~~TN~~|VBR,<br>VR|IR= 100 μA<br>~~**e**e~~|600<br>~~ee~~|-<br>~~ee~~|-|V<br>~~ee~~|
|Forward voltage<br>~~TN~~<br>~~a~~<br>~~a~~|VF<br>~~a~~<br>~~a~~|IF= 30 A<br>~~**e**e~~<br>~~e~~|-<br>~~ee~~<br>~~e~~|1.4<br>~~ee~~<br>~~ee~~|2.0<br>~~ee~~||
|||IF= 30 A, TJ= 150 °C<br>~~**e**e~~<br>~~e~~<br>~~ee~~|-<br>~~ee~~<br>~~e~~<br>~~ee~~|1.15<br>~~ee~~<br>~~ee~~<br>~~ee~~|1.35<br>~~ee~~<br>~~ee~~||
|Reverse leakage current<br>~~TN~~<br>~~a~~|IR<br>~~a~~|VR= VRrated<br>~~**e**e ~~<br>~~ee~~|-<br> ~~ee~~<br>~~ee~~|0.02<br>~~ee~~<br>~~ee~~|30<br>~~ee~~|μA<br>~~ee~~|
|||TJ= 150 °C, VR= VRrated<br>~~ee~~|-<br>~~ee~~|30<br>~~ee~~|250<br>~~ee~~||
|Junction capacitance<br>~~a ~~<br>~~ee~~|CT<br> ~~a ~~<br>~~ee~~|VR= 600 V<br> ~~ee~~<br>~~ee~~|-<br>~~ee~~<br>~~ee~~|20<br>~~ee ~~<br>~~ee~~|-<br> ~~ee~~<br>~~ee~~|pF<br>~~ee~~<br>~~ee~~|
|Series inductance<br>~~ee~~|LS<br>~~ee~~|Measured lead to lead 5 mm from package body<br>~~ee~~|-<br>~~ee~~|8.0<br>~~ee~~|-<br>~~ee~~|nH<br>~~ee~~|
Revision: 21-Dec-2021
Document Number: 96340
**1**
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
**VS-ETU3006S-M3, VS-ETU3006-1-M3**
www.vishay.com
## Vishay Semiconductors
## **DYNAMIC RECOVERY CHARACTERISTICS** (TJ = 25 °C unless otherwise specified)
|**DYNAMIC RECOVERY CHARACTERISTICS**(TJ= 25 °C unless otherwise specified)|**DYNAMIC RECOVERY CHARACTERISTICS**(TJ= 25 °C unless otherwise specified)|**DYNAMIC RECOVERY CHARACTERISTICS**(TJ= 25 °C unless otherwise specified)|**DYNAMIC RECOVERY CHARACTERISTICS**(TJ= 25 °C unless otherwise specified)|**DYNAMIC RECOVERY CHARACTERISTICS**(TJ= 25 °C unless otherwise specified)|**DYNAMIC RECOVERY CHARACTERISTICS**(TJ= 25 °C unless otherwise specified)|**DYNAMIC RECOVERY CHARACTERISTICS**(TJ= 25 °C unless otherwise specified)|**DYNAMIC RECOVERY CHARACTERISTICS**(TJ= 25 °C unless otherwise specified)|
|---|---|---|---|---|---|---|---|
|**PARAMETER**|**SYMBOL**|**TEST CONDITIONS**||**MIN.**|**TYP.**|**MAX.**|**UNITS**|
|Reverse recovery time|trr|IF= 1 A, dIF/dt = 50 A/μs, VR= 30 V||-|30|45|ns|
|||TJ= 25 °C|IF= 30 A<br>dIF/dt = 200 A/μs<br>VR= 200 V|-|45|-||
|||TJ= 125 °C||-|100|-||
|Peak recovery current|IRRM|TJ= 25 °C||-|5.6|-|A|
|||TJ= 125 °C||-|10|-||
|Reverse recovery charge|Qrr|TJ= 25 °C||-|127|-|nC|
|||TJ= 125 °C||-|580|-||
## **THERMAL - MECHANICAL SPECIFICATIONS**
|**THERMAL - MECHANICAL SPECIFICATIONS**|**THERMAL - MECHANICAL SPECIFICATIONS**|**THERMAL - MECHANICAL SPECIFICATIONS**|**THERMAL - MECHANICAL SPECIFICATIONS**|**THERMAL - MECHANICAL SPECIFICATIONS**|**THERMAL - MECHANICAL SPECIFICATIONS**|**THERMAL - MECHANICAL SPECIFICATIONS**|
|---|---|---|---|---|---|---|
|**PARAMETER**|**SYMBOL**|**TEST CONDITIONS**|**MIN.**|**TYP.**|**MAX.**|**UNITS**|
|Maximum junction and storage<br>temperature range|TJ, TStg||-65|-|175|°C|
|Thermal resistance,<br>junction to case|RthJC||-|0.95|1.4|°C/W|
|Thermal resistance,<br>junction to ambient|RthJA|Typical socket mount|-|-|70||
|Thermal resistance,<br>case to heatsink|RthCS|Mounting surface, flat, smooth, and greased|-|0.5|-||
|Weight|||-|2.0|-|g|
||||-|0.07|-|oz.|
|Mounting torque|||6<br>(5)|-|12<br>(10)|kgf · cm<br>(lbf · in)|
|Marking device||Case style D2PAK (TO-263AB)|ETU3006S||||
|||Case style TO-262|ETU3006-1||||
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**----- Start of picture text -----**<br>
1000<br>100 TJ = 175 °C<br>10 TJ = 150 °C<br>T J = 25 °C<br>1<br>0.0 0.5 1.0 1.5 2.0 2.5<br>VFM - Forward Voltage Drop (V)<br>Instantaneous Forward Current (A)<br>-<br>IF<br>**----- End of picture text -----**<br>
Fig. 1 - Typical Forward Voltage Drop Characteristics
**==> picture [198 x 164] intentionally omitted <==**
**----- Start of picture text -----**<br>
1000<br>175°C<br>100<br>150°C<br>10 125°C<br>100°C<br>1<br>75°C<br>0.1<br>50°C<br>25°C<br>0.01<br>0.001<br>0 100 200 300 400 500 600<br>VR - Reverse Voltage (V)<br> - Reverse Current (μA)<br>IR<br>**----- End of picture text -----**<br>
Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
Revision: 21-Dec-2021
Document Number: 96340
**2**
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
**VS-ETU3006S-M3, VS-ETU3006-1-M3** Vishay Semiconductors
www.vishay.com
**==> picture [198 x 166] intentionally omitted <==**
**----- Start of picture text -----**<br>
1000<br>100<br>10<br>1<br>0 100 200 300 400 500 600<br>VR - Reverse Voltage (V)<br>Junction Capacitance (pF)<br>-<br>T<br>C<br>**----- End of picture text -----**<br>
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
**==> picture [352 x 165] intentionally omitted <==**
**----- Start of picture text -----**<br>
10<br>1 D = 0.5<br>D = 0.2<br>D = 0.1<br>D = 0.05<br>0.1<br>D = 0.02<br>D = 0.01 Single Pulse<br>(Thermal Resistance)<br>0.01<br>1E-05 1E-04 1E-03 1E-02 1E-0 1E+00<br>t1 - Rectangular Pulse Duration (s)<br>Thermal Impedance (°C/W)<br>-<br>thJC<br>Z<br>**----- End of picture text -----**<br>
Fig. 4 - Max. Thermal Impedance ZthJC Characteristics
**==> picture [464 x 192] intentionally omitted <==**
**----- Start of picture text -----**<br>
180 60<br>170<br>50 RMS Limit<br>160<br>150 40<br>140 D = 0.01<br>30 D = 0.02<br>130 D = 0.05<br>120 DC 20 D = 0.1<br>D = 0.2<br>110 D = 0.5<br>10 DC<br>100<br>90 0<br>0 5 10 15 20 25 30 35 40 45 0 5 10 15 20 25 30 35 40 45<br>IF(AV) - Average Forward Current (A) IF(AV) - Average Forward Current (A)<br>Fig. 5 - Maximum Allowable Case Temperature vs. Fig. 6 - Forward Power Loss Characteristics<br>Average Forward Current<br>Average Power Loss (W)<br> Allowable Case Temperature (°C)<br>**----- End of picture text -----**<br>
Revision: 21-Dec-2021
Document Number: 96340
**3**
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
**VS-ETU3006S-M3, VS-ETU3006-1-M3**
www.vishay.com
## Vishay Semiconductors
**==> picture [205 x 147] intentionally omitted <==**
**----- Start of picture text -----**<br>
130<br>120<br>110<br>100<br>IF = 30 A, 125 °C<br>90<br>80<br>70<br>60<br>50 I F = 30 A, 25 ° C<br>40<br>30<br>20<br>typical value<br>10<br>100 1000<br> (ns)<br>trr<br>**----- End of picture text -----**<br>
**==> picture [47 x 8] intentionally omitted <==**
**----- Start of picture text -----**<br>
dIF/dt (A/μs)<br>**----- End of picture text -----**<br>
Fig. 7 - Typical Reverse Recovery vs. dIF/dt
**==> picture [205 x 149] intentionally omitted <==**
**----- Start of picture text -----**<br>
1800<br>1600<br>1400<br>1200 I F = 30 A, 125 ° C<br>1000<br>800<br>600<br>400 I F = 30 A, 25 °C<br>200<br>typical value<br>0<br>100 1000<br> (nC)<br>rr<br>Q<br>**----- End of picture text -----**<br>
**==> picture [47 x 9] intentionally omitted <==**
**----- Start of picture text -----**<br>
dIF/dt (A/μs)<br>**----- End of picture text -----**<br>
Fig. 8 - Typical Stored Charge vs. dIF/dt
**==> picture [272 x 220] intentionally omitted <==**
**----- Start of picture text -----**<br>
(3)<br>IF trr<br>ta tb<br>0<br>(4)<br>Qrr<br>(2)<br>IRRM 0.5 IRRM<br>di(rec)M/dt (5)<br>0.75 IRRM<br>(1) diF/dt<br>(1) diF/dt - rate of change of current (4) Qrr - area under curve defined by trr<br> through zero crossing and IRRM<br>(2) IRRM - peak reverse recovery current Qrr = t 2rr x IRRM<br>(3) t from zero crossing point of negative rr - reverse recovery time measured (5) di(rec)M/dt - peak rate of change of<br> going IF to point where a line passing current during tb portion of trr<br> through 0.75 IRRM and 0.50 IRRM<br> extrapolated to zero current.<br>**----- End of picture text -----**<br>
Fig. 9 - Reverse Recovery Waveform and Definitions
Revision: 21-Dec-2021
Document Number: 96340
**4** For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
**VS-ETU3006S-M3, VS-ETU3006-1-M3**
www.vishay.com
## Vishay Semiconductors
## **ORDERING INFORMATION TABLE**
- **Device code VSE T U 30 06 S TRL -M3** 1 2 3 4 5 6 7 8 9
- **1** - Vishay Semiconductors product **2** - Circuit configuration E = single
- **3** - T = TO-220 **4** - U = ultrafast recovery time **5** - Current code (30 = 30 A) **6** - Voltage code (06 = 600 V) **7** - • S = D[2] PAK (TO-263AB) - • -1 = TO-262AA
- **8** - • None = tube (50 pieces)
- • None = tube (50 pieces)
- • TRL = tape and reel (left oriented, for D[2] PAK (TO-263AB) package)
- • TRR = tape and reel (right oriented, for D[2] PAK (TO-263AB) package)
- **9** - -M3 = halogen-free, RoHS-compliant and terminations lead (Pb)-free
|**ORDERING INFORMATION** (Example)|**ORDERING INFORMATION** (Example)|**ORDERING INFORMATION** (Example)|
|---|---|---|
|**PREFERRED P/N**|**BASE QUANTITY**|**PACKAGING DESCRIPTION**|
|VS-ETU3006S-M3|50|Antistatic plastic tubes|
|VS-ETU3006STRR-M3|800|13" diameter plastic tape and reel|
|VS-ETU3006STRL-M3|800|13" diameter plastic tape and reel|
|VS-ETU3006-1-M3|50|Antistatic plastic tubes|
||**LINKS TO RELATED DOCUMENTS**|**LINKS TO RELATED DOCUMENTS**||
|---|---|---|---|
|Dimensions|D2PAK (TO-263AB)||www.vishay.com/doc?96164|
||TO-262AA||www.vishay.com/doc?96165|
|Part marking information|D2PAK (TO-263AB)||www.vishay.com/doc?95444|
||TO-262AA||www.vishay.com/doc?95443|
|Packaginginformation|D2PAK (TO-263AB)||www.vishay.com/doc?96424|
|SPICE model|||www.vishay.com/doc?96775|
Revision: 21-Dec-2021
Document Number: 96340
**5**
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
**Outline Dimensions**
**==> picture [59 x 48] intentionally omitted <==**
www.vishay.com
## Vishay Semiconductors
## **D[2] PAK**
## **DIMENSIONS** in millimeters and inches
**==> picture [496 x 342] intentionally omitted <==**
**----- Start of picture text -----**<br>
Conforms to JEDEC [®] outline D [2] PAK (SMD-220) B<br>A Pad layout<br>(2)(3) A (E)<br>c2 11.00<br>E MIN.<br>(0.43)<br>A<br>(3) L1 4<br>9.65<br>MIN.<br>(0.38)<br>(D1) (3)<br>Detail A<br>D 17.90 (0.70)<br>H 15.00 (0.625)<br>(2)<br>1 2 3<br>3.81<br>MIN.<br>L2 (0.15)<br>B B 2.32<br>MIN.<br>(0.08)<br>A<br>2.64 (0.103)<br>2 x b2 C E1 (3) 2.41 (0.096)<br>c<br>2 x b View A - A<br>0.010 M A M B ± 0.004 M B<br>2 x e<br>Base<br>Plating (4) Metal<br>H b1, b3<br>Gauge<br>plane<br>(c) c1 (4)<br>0° to 8° B<br>L Seating<br>plane<br>L3 A1<br>(b, b2)<br>Lead tip L4 Section B - B and C - C<br>Detail “A” Scale: None<br>Rotated 90 °CW<br>Scale: 8:1<br>**----- End of picture text -----**<br>
|**SYMBOL**|**MILLIMETERS**|**MILLIMETERS**|**INCHES**|**INCHES**|**NOTES**||**SYMBOL**|**MILLIMETERS**|**MILLIMETERS**|**INCHES**|**INCHES**|**NOTES**|
|---|---|---|---|---|---|---|---|---|---|---|---|---|
||**MIN.**|**MAX.**|**MIN.**|**MAX.**||||**MIN.**|**MAX.**|**MIN.**|**MAX.**||
|A|4.06|4.83|0.160|0.190|||D1|6.86|8.00|0.270|0.315|3|
|A1|0.00|0.254|0.000|0.010|||E|9.65|10.67|0.380|0.420|2, 3|
|b|0.51|0.99|0.020|0.039|||E1|7.90|8.80|0.311|0.346|3|
|b1|0.51|0.89|0.020|0.035|4||e|2.54 BSC||0.100 BSC|||
|b2|1.14|1.78|0.045|0.070|||H|14.61|15.88|0.575|0.625||
|b3|1.14|1.73|0.045|0.068|4||L|1.78|2.79|0.070|0.110||
|c|0.38|0.74|0.015|0.029|||L1|-|1.65|-|0.066|3|
|c1|0.38|0.58|0.015|0.023|4||L2|1.27|1.78|0.050|0.070||
|c2|1.14|1.65|0.045|0.065|||L3|0.25 BSC||0.010 BSC|||
|D|8.51|9.65|0.335|0.380|2||L4|4.78|5.28|0.188|0.208||
## **Notes**
- (1) Dimensioning and tolerancing per ASME Y14.5 M-1994
- (2) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outmost extremes of the plastic body
- (3) Thermal pad contour optional within dimension E, L1, D1 and E1
- (4) Dimension b1 and c1 apply to base metal only
- (5) Datum A and B to be determined at datum plane H
- (6) Controlling dimension: inches
- (7) Outline conforms to JEDEC® outline TO-263AB
Revision: 13-Jul-17
**1**
Document Number: 96164
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
**Outline Dimensions**
Vishay Semiconductors
**==> picture [59 x 48] intentionally omitted <==**
www.vishay.com
## **TO-262AA**
## **DIMENSIONS** in millimeters and inches
**==> picture [324 x 283] intentionally omitted <==**
**----- Start of picture text -----**<br>
Modified JEDEC [®] outline TO-262<br>(Datum A) (2) (3) A B<br>E A c2 E<br>A<br>(3) L1<br>Seatingplane D1 (3)<br>D<br>1 2 3<br>C C<br>L2<br>B B L (2)<br>A<br>3 x b2 c E1 (3)<br>3 x b A1 Section A - A<br>2 x e<br>(4) Base<br>0.010 M A M B Plating b1, b3 metal<br>Lead assignments<br>Diodes c c1 (4)<br>1. - Anode (two die)/open (one die)<br>2., 4. - Cathode<br>( b, b2)<br>3. - Anode<br>Lead tip Section B - B and C - C<br>Scale: None<br>**----- End of picture text -----**<br>
||Lead tip<br>2., 4. - Cathode<br>3. - Anode|Lead tip<br>2., 4. - Cathode<br>3. - Anode|~~(~~b, b2)<br>Section B - B and C - C<br>Scale: None|~~(~~b, b2)<br>Section B - B and C - C<br>Scale: None||
|---|---|---|---|---|---|
|**SYMBOL**|**MILLIMETERS**||**INCHES**||**NOTES**|
||**MIN.**|**MAX.**|**MIN.**|**MAX.**||
|A|4.06|4.83|0.160|0.190||
|A1|2.03|3.02|0.080|0.119||
|b|0.51|0.99|0.020|0.039||
|b1|0.51|0.89|0.020|0.035|4|
|b2|1.14|1.78|0.045|0.070||
|b3|1.14|1.73|0.045|0.068|4|
|c|0.38|0.74|0.015|0.029||
|c1|0.38|0.58|0.015|0.023|4|
|c2|1.14|1.65|0.045|0.065||
|D|8.51|9.65|0.335|0.380|2|
|D1|6.86|8.00|0.270|0.315|3|
|E|9.65|10.67|0.380|0.420|2, 3|
|E1|7.90|8.80|0.311|0.346|3|
|e|2.54 BSC||0.100 BSC|||
|L|13.46|14.10|0.530|0.555||
|L1|-|1.65|-|0.065|3|
|L2|3.56|3.71|0.140|0.146||
## **Notes**
> (1) Dimensioning and tolerancing as per ASME Y14.5M-1994
> (2) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outmost extremes of the plastic body
> (3) Thermal pad contour optional within dimension E, L1, D1 and E1
> (4) Dimension b1 and c1 apply to base metal only
> (5) Controlling dimension: inches
- (6) Outline conform to JEDEC® TO-262 except A1 (max.), b (min., max.), b1 (min.), b2 (max.), c (min.), c1(min.), c2 (max.), D (min.), E (max.), L1 (max.), L2 (min., max.)
Revision: 30-Nov-17
**1**
Document Number: 96165
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**Legal Disclaimer Notice** Vishay
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## **Disclaimer**
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer's technical experts. Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein.
Hyperlinks included in this datasheet may direct users to third-party websites. These links are provided as a convenience and for informational purposes only. Inclusion of these hyperlinks does not constitute an endorsement or an approval by Vishay of any of the products, services or opinions of the corporation, organization or individual associated with the third-party website. Vishay disclaims any and all liability and bears no responsibility for the accuracy, legality or content of the third-party website or for that of subsequent links.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
_**© 2022 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED**_
Revision: 01-Jan-2022
Document Number: 91000
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Updated at June 4, 2026
Vishay is a global leader in the manufacturing of discrete semiconductors and passive electronic components. Renowned for its exceptional quality and engineering expertise, the company produces highly reliable solutions that drive innovation across the industrial, automotive, telecommunications, and consumer electronics markets. From advanced factory automation to vehicle electrification, Vishay components provide the foundational building blocks for modern electronic design. The company's expansive portfolio is heavily focused on efficient power management, signal routing, and energy storage. Within its passive component lineup, Vishay is recognized for its extensive array of high-performance capacitors, including robust aluminium electrolytic, film, and polymer variants, alongside highly efficient power inductors. In the realm of discrete semiconductors, Vishay is a premier manufacturer of single and dual MOSFETs, as well as a vast selection of Schottky, Zener, and fast-recovery rectifier diodes designed for demanding power applications. Furthermore, Vishay delivers industry-leading circuit protection and thermal management solutions. With a broad offering of transient voltage suppressors (TVS diodes) and temperature-sensing NTC thermistors, these components are engineered to safeguard sensitive circuitry against both electrical and thermal overstress. By combining this vital mix of advanced discretes and passives, Vishay enables engineers to develop robust, space-saving, and highly resilient electronic systems.
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