VS-ETU2006S2LHM3

**VS-ETU2006S2LHM3** 

www.vishay.com 

## Vishay Semiconductors 

## **Ultrafast Rectifier, 20 A FRED Pt[®]** 

## **FEATURES** 

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**----- Start of picture text -----**<br>
Base<br>cathode<br>4 2, 4<br>1 3<br>|<br>N/C Anode<br>**----- End of picture text -----**<br>


## **D[2] PAK 2L (TO-263AB 2L)** 

|**PRIMARY CHARACTERISTICS**|**PRIMARY CHARACTERISTICS**|
|---|---|
|IF(AV)|20 A|
|VR|600 V|
|VFat IF|1.2 V|
|trr(typ.)|ns|
|TJmax.|175 °C|
|Package|D2PAK 2L (TO-263AB 2L)|
|Circuit configuration|Single|



- Low forward voltage drop 

- Ultrafast recovery time 

- 175 °C operating junction temperature 

- Low leakage current 

- AEC-Q101 qualified, meets JESD 201 class 2 whisker test 

- Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C 

- Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 

## **DESCRIPTION** 

State of the art, ultralow VF, soft-switching ultrafast rectifiers optimized for Discontinuous (Critical) Mode (DCM) Power Factor Correction (PFC) 

The minimized conduction loss, optimized stored charge and low recovery current minimized the switching losses and reduce over dissipation in the switching element and snubbers. 

The device is also intended for use as a freewheeling diode in power supplies and other switching applications 

## **APPLICATIONS** 

AC/DC SMPS 70 W to 400 W e.g. laptop and printer AC adapters, desktop PC, TV and monitor, games units, and DVD AC/DC power supplies. 

## **MECHANICAL DATA** 

**Case:** D[2] PAK 2L (TO-263AB 2L) Molding compound meets UL 94 V-0 flammability rating 

**Terminals:** matte tin plated leads, solderable per J-STD-002 

## **ABSOLUTE MAXIMUM RATINGS** 

|**ABSOLUTE MAXIMUM RATINGS**|**ABSOLUTE MAXIMUM RATINGS**|**ABSOLUTE MAXIMUM RATINGS**|**ABSOLUTE MAXIMUM RATINGS**|**ABSOLUTE MAXIMUM RATINGS**|
|---|---|---|---|---|
|**PARAMETER**|**SYMBOL**|**TEST CONDITIONS**|**MAX.**|**UNITS**|
|Repetitive peak reverse voltage|VRRM||600|V|
|Average rectified forward current|IF(AV)|TC= 129 °C|20|A|
|Non-repetitive peak surge current|IFSM|TC= 25 °C|180||
|Operatingjunction and storage temperatures|TJ, TStg||-55 to +175|°C|



|**ELECTRICAL SPECIFICATIONS**(TJ= 25 °C unless otherwise specified)<br>~~Cn~~|**ELECTRICAL SPECIFICATIONS**(TJ= 25 °C unless otherwise specified)<br>~~Cn~~|**ELECTRICAL SPECIFICATIONS**(TJ= 25 °C unless otherwise specified)<br>~~Cn~~|**ELECTRICAL SPECIFICATIONS**(TJ= 25 °C unless otherwise specified)<br>~~Cn~~|**ELECTRICAL SPECIFICATIONS**(TJ= 25 °C unless otherwise specified)<br>~~Cn~~|**ELECTRICAL SPECIFICATIONS**(TJ= 25 °C unless otherwise specified)<br>~~Cn~~|**ELECTRICAL SPECIFICATIONS**(TJ= 25 °C unless otherwise specified)<br>~~Cn~~|
|---|---|---|---|---|---|---|
|**PARAMETER**<br>~~Cn~~<br>~~Ge~~|**SYMBOL**<br>~~Ge~~|**TEST CONDITIONS**<br>~~Ge~~|**MIN.**<br>~~Ge~~|**TYP.**<br>~~Ge~~|**MAX.**<br>~~Ge~~|**UNITS**<br>~~Ge~~|
|Breakdown voltage,<br>blockingvoltage<br>~~$e~~<br>~~ee~~|VBR,<br>VR<br>~~$e~~<br>~~e~~|IR= 100 μA<br>~~$e~~<br>~~e~~|600<br>~~$e~~|-<br>~~$e~~|-<br>~~$e~~|V<br>~~$e~~|
|Forward voltage<br>~~$e~~<br>~~ee~~|VF<br>~~$e~~<br>~~ea~~|IF= 20 A<br>~~$e~~<br>~~ee~~<br>~~e~~|-<br>~~$e~~<br>~~ee~~|1.35<br>~~$e~~<br>~~ee~~|1.7<br>~~$e~~<br>~~ee~~||
|||IF= 20 A, TJ= 150 °C<br>~~$e~~<br>~~ee~~<br>~~ea~~|-<br>~~$e~~<br>~~ee~~|1.2<br>~~$e~~<br>~~ee~~|1.4<br>~~$e~~<br>~~ee~~||
|Reverse leakage current<br>~~$e~~<br>~~ee~~|IR<br>~~$e~~<br>~~ea~~|VR= VRrated<br>~~$e~~<br>~~ea~~|-<br>~~$e~~|0.02<br>~~$e~~|5<br>~~$e~~|μA<br>~~$e~~|
|||TJ= 150 °C, VR= VRrated<br>~~a~~<br>~~GO~~|-<br>~~OO~~|20<br>~~OO~~|200||
|Junction capacitance<br>~~GD~~|CT<br>~~GD~~|VR= 600 V<br>~~GD~~<br>~~GO~~|-<br>~~GD~~<br>~~OO~~|12<br>~~GD~~<br>~~OO~~|-<br>~~GD~~|pF<br>~~GD~~|
|Series inductance<br>~~pt~~|LS<br>~~pt~~|Measured lead to lead 5 mm from package body<br>~~GO~~<br>~~pt~~|-<br>~~OO~~<br>~~pt~~|8.0<br>~~OO~~<br>~~pt~~|-<br>~~pt~~|nH<br>~~pt~~|



Revision: 12-Jun-2023 **1** Document Number: 96788 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**VS-ETU2006S2LHM3** 

## www.vishay.com 

## Vishay Semiconductors 

## **DYNAMIC RECOVERY CHARACTERISTICS** (TJ = 25 °C unless otherwise specified) 

|**DYNAMIC RECOVERY CHARACTERISTICS**(TJ= 25 °C unless otherwise specified)|**DYNAMIC RECOVERY CHARACTERISTICS**(TJ= 25 °C unless otherwise specified)|**DYNAMIC RECOVERY CHARACTERISTICS**(TJ= 25 °C unless otherwise specified)|**DYNAMIC RECOVERY CHARACTERISTICS**(TJ= 25 °C unless otherwise specified)|**DYNAMIC RECOVERY CHARACTERISTICS**(TJ= 25 °C unless otherwise specified)|**DYNAMIC RECOVERY CHARACTERISTICS**(TJ= 25 °C unless otherwise specified)|**DYNAMIC RECOVERY CHARACTERISTICS**(TJ= 25 °C unless otherwise specified)|**DYNAMIC RECOVERY CHARACTERISTICS**(TJ= 25 °C unless otherwise specified)|
|---|---|---|---|---|---|---|---|
|**PARAMETER**|**SYMBOL**|**TEST CONDITIONS**||**MIN.**|**TYP.**|**MAX.**|**UNITS**|
|Reverse recovery time|trr|IF= 1 A, dIF/dt = 100 A/μs, VR= 30 V||-|26|-|ns|
|||TJ= 25 °C|IF= 20 A<br>dIF/dt = 200 A/μs<br>VR= 390 V|-|42|-||
|||TJ= 125 °C||-|89|-||
|Peak recovery current|IRRM|TJ= 25 °C||-|4.9|-|A|
|||TJ= 125 °C||-|8.4|-||
|Reverse recovery charge|Qrr|TJ= 25 °C||-|110|-|C|
|||TJ= 125 °C||-|440|-||



## **THERMAL - MECHANICAL SPECIFICATIONS** 

|**THERMAL - MECHANICAL SPECIFICATIONS**|**THERMAL - MECHANICAL SPECIFICATIONS**|**THERMAL - MECHANICAL SPECIFICATIONS**|**THERMAL - MECHANICAL SPECIFICATIONS**|**THERMAL - MECHANICAL SPECIFICATIONS**|**THERMAL - MECHANICAL SPECIFICATIONS**|**THERMAL - MECHANICAL SPECIFICATIONS**|
|---|---|---|---|---|---|---|
|**PARAMETER**|**SYMBOL**|**TEST CONDITIONS**|**MIN.**|**TYP.**|**MAX.**|**UNITS**|
|Maximum junction and storage<br>temperature range|TJ, TStg||-55|-|175|°C|
|Thermal resistance,<br>junction to case|RthJC||-|-|1.51|°C/W|
|Thermal resistance,<br>junction to ambient|RthJA|Typical socket mount|-|-|70||
|Thermal resistance,<br>case to heat sink|RthCS|Mounting surface, flat, smooth, and<br>greased|-|0.5|-||
|Weight|||-|2.0|-|g|
||||-|0.07|-|oz.|
|Mounting torque|||6<br>(5)|-|12<br>(10)|kgf · cm<br>(lbf · in)|
|Markingdevice||Case style D2PAK 2L (TO-263AB 2L)|ETU2006SH||||



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100<br>TJ = 175 °C<br>10<br>TJ = 150  ° C<br>TJ = 125 °C<br>TJ = 25 °C<br>1<br>0.3 0.5 0.7 0.9 1.1 1.3 1.5 1.7 1.9 2.1 2.3<br>VF - Forward Voltage Drop (V)<br> - Instantaneous Forward Current (A)<br>IF<br>**----- End of picture text -----**<br>


Fig. 1 - Typical Forward Voltage Drop Characteristics 

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1000<br>100 175  ° C<br>150 °C<br>10<br>125 °C<br>1 100 °C<br>75 °C<br>0.1<br>50 °C<br>0.01<br>0.001 25 °C<br>0.0001<br>0         100       200        300       400       500       600<br>VR - Reverse Voltage (V)<br> - Reverse Current (µA)<br>IR<br>**----- End of picture text -----**<br>


Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage 

Revision: 12-Jun-2023 

Document Number: 96788 

**2** 

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**VS-ETU2006S2LHM3** 

www.vishay.com 

## Vishay Semiconductors 

**==> picture [199 x 167] intentionally omitted <==**

**----- Start of picture text -----**<br>
1000<br>100<br>10<br>1<br>0 100 200 300 400 500 600<br>VR - Reverse Voltage (V)<br>Junction Capacitance (pF)<br>-<br>T<br>C<br>**----- End of picture text -----**<br>


Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage 

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**----- Start of picture text -----**<br>
10<br>1<br>D = 0.5<br>D = 0.2<br>D = 0.1<br>0.1 D = 0.05<br>D = 0.02 Single Pulse<br>D = 0.01 (Thermal Resistance)<br>0.01<br>1E-05                             1E-04                            1E-03                           1E-02                           1E-01                           1E+00<br>t1 - Rectangular Pulse Duration (s)<br>Thermal Impedance (°C/W)<br>-<br>thJC<br>Z<br>**----- End of picture text -----**<br>


Fig. 4 - Max. Thermal Impedance ZthJC Characteristics 

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**----- Start of picture text -----**<br>
180<br>170<br>160<br>150<br>140<br>DC<br>130<br>120 Square wave (D = 0.50)<br>110 rated VR applied<br>100<br>90<br>80<br>0 5 10 15 20 25 30<br>IF(AV) - Average Forward Current (A)<br>C)<br>°<br>Allowable Case Temperature (<br>**----- End of picture text -----**<br>


Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current 

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**----- Start of picture text -----**<br>
40<br>RMS limit<br>30<br>20 D = 0.02<br>D = 0.05<br>D = 0.10<br>D = 0.20<br>10 D = 0.50<br>DC<br>0<br>0 5 10 15 20 25 30<br>IF(AV) - Average Forward Current (A)<br>Fig. 6 - Forward Power Loss Characteristics<br>Average Power Loss (W)<br>**----- End of picture text -----**<br>


Revision: 12-Jun-2023 

Document Number: 96788 

**3** 

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**VS-ETU2006S2LHM3** 

www.vishay.com 

## Vishay Semiconductors 

**==> picture [206 x 165] intentionally omitted <==**

**----- Start of picture text -----**<br>
110<br>100 V R = 400 V<br>90<br>80<br>IF = 20 A<br>70<br>TJ = 125°C<br>60<br>50<br>40<br>30 I F = 20 A<br>20 TJ = 25 ° C<br>10<br>0 200 400 600 800 1000<br>dIF/dt (A/µs)<br> (ns)<br>trr<br>**----- End of picture text -----**<br>


Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt 

**==> picture [206 x 164] intentionally omitted <==**

**----- Start of picture text -----**<br>
900<br>VR = 400 V<br>800<br>700<br>IF = 20 A<br>600<br>TJ = 125°C<br>500<br>400 I F = 20 A<br>300 T J = 25 °C<br>200<br>100<br>0<br>0 200 400 600 800 1000<br>dIF/dt (A/µs)<br> (nC)<br>rr<br>Q<br>**----- End of picture text -----**<br>


Fig. 8 - Typical Stored Charge vs. dIF/dt 

**==> picture [272 x 221] intentionally omitted <==**

**----- Start of picture text -----**<br>
(3)<br>IF trr<br>ta tb<br>0<br>(4)<br>Qrr<br>(2)<br>IRRM 0.5 IRRM<br>di(rec)M/dt (5)<br>0.75 IRRM<br>(1) diF/dt<br>(1) diF/dt - rate of change of current  (4) Qrr - area under curve defined by trr<br>      through zero crossing       and IRRM<br>(2) IRRM - peak reverse recovery current Qrr = t      2rr x IRRM<br>(3) t     from zero crossing point of negative rr - reverse recovery time measured  (5) di(rec)M/dt - peak rate of change of<br>     going IF to point where a line passing        current during tb portion of trr<br>     through 0.75 IRRM and 0.50 IRRM<br>    extrapolated to zero current.<br>**----- End of picture text -----**<br>


Fig. 9 - Reverse Recovery Waveform and Definitions 

Revision: 12-Jun-2023 

Document Number: 96788 

**4** 

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**VS-ETU2006S2LHM3** 

www.vishay.com 

## Vishay Semiconductors 

## **ORDERING INFORMATION TABLE** 

- **Device code VSE T U 20 06 S2 L H M3** 1 2 3 4 5 6 7 8 9 10 

- **1** - Vishay Semiconductors product **2** - Circuit configuration E = single diode 

- **3** - T = D[2] PAK (TO-263) package **4** - U = ultrafast recovery time **5** - Current code (20 = 20 A) **6** - Voltage code (06 = 600 V) **7** - • S2 = true 2 pin D[2] PAK **8** - • None = tube (50 pieces) 

      - • None = tube (50 pieces) 

      - • L = tape and reel (left oriented, for D[2] PAK package) 

         - If needed different orientation / packaging, please contact factory 

   - **9** - H = AEC-Q101 qualified 

   - **10** - Environmental digit: M3 = halogen-free, RoHS-compliant, and termination lead (Pb)-free 

|**ORDERING INFORMATION** (Example)|**ORDERING INFORMATION** (Example)|**ORDERING INFORMATION** (Example)|||
|---|---|---|---|---|
|**PREFERRED P/N**|**BASE QUANTITY**|||**PACKAGING DESCRIPTION**|
|VS-ETU2006S2LHM3|800|||13" diameter reel|
||||||
|**LINKS TO RELATED DOCUMENTS**|||||
|Dimensions|||www.vishay.com/doc?96683||
|Part markinginformation|||www.vishay.com/doc?96693||
|Packaging information|||www.vishay.com/doc?95032||



Revision: 12-Jun-2023 

Document Number: 96788 

**5** 

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**Legal Disclaimer Notice** Vishay 

www.vishay.com 

## **Disclaimer** 

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Revision: 01-Jan-2023 

Document Number: 91000 

**1**