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VS-ETH3106FP-N3
Fast / Ultrafast Diode, 600 V, 30 A, Single, 2.15 V, 90 ns, 280 A
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- Manufacturer: VISHAY
- Product type: Fast & Ultrafast Recovery Rectifier Diodes
- SVHC: To Be Advised
- No. of Pins: 2 Pin
- Product Range: FRED Pt Series
- Qualification: -
- Diode Case Style: TO-220FP
- Diode Configuration: Single
- Forward Voltage Max: 2.15V
- Forward Surge Current: 280A
- Reverse Recovery Time: 90ns
- Average Forward Current: 30A
- Operating Temperature Max: 175°C
- Repetitive Peak Reverse Voltage: 600V
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 0.809 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
**==> picture [506 x 168] intentionally omitted <==** **----- Start of picture text -----**<br> VS-ETH3106FP-N3<br>www.vishay.com Vishay Semiconductors<br>va a<br>Hyperfast Rectifier, 30 A FRED Pt [®]<br>FEATURES<br>• Hyperfast soft recovery time<br>• Low forward voltage drop<br>• 175 °C operating junction temperature<br>| 1 4 2 • Low leakage current RoHS<br>1 Cathode Anode • Fully isolated package (VINS = 2500 VRMS)<br>2 • True 2 pin package<br>**----- End of picture text -----**<br> - True 2 pin package **==> picture [75 x 7] intentionally omitted <==** **----- Start of picture text -----**<br> TO-220 FullPAK 2L<br>**----- End of picture text -----**<br> - Designed and qualified according to JEDEC[®] -JESD 47 - Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 ## **LINKS TO ADDITIONAL RESOURCES** ## 3D Models ## **DESCRIPTION / APPLICATIONS** Hyperfast recovery rectifiers designed with optimized performance of forward voltage drop, hyperfast recovery time, and soft recovery. The planar structure and the platinum doped life time control guarantee the best overall performance, ruggedness and reliability characteristics. |**PRIMARY CHARACTERISTICS**|**PRIMARY CHARACTERISTICS**| |---|---| |IF(AV)|30 A| |VR|600 V| |VFat IF|1.40 V| |trr(typ.)|22 ns| |TJmax.|175 °C| |Package|TO-220 FullPAK 2L| |Circuit configuration|Single| These devices are intended for use in PFC boost stage in the AC/DC section of switch mode power supplies and inverters (air conditioning, high-frequency welding, UPS, and motor drives) The extremely optimized stored charge and low recovery current minimize the switching losses and reduce over dissipation in the switching element and snubbers. ## **MECHANICAL DATA** **Case:** TO-220 FullPACK 2L Molding compound meets UL 94 V-0 flammability rating **Terminals:** matte tin plated leads, solderable per J-STD-002 |**ABSOLUTE MAXIMUM RATINGS**|**ABSOLUTE MAXIMUM RATINGS**|**ABSOLUTE MAXIMUM RATINGS**|**ABSOLUTE MAXIMUM RATINGS**|**ABSOLUTE MAXIMUM RATINGS**| |---|---|---|---|---| |**PARAMETER**|**SYMBOL**|**TEST CONDITIONS**|**VALUES**|**UNITS**| |Peak repetitive reverse voltage|VRRM||600|V| |Average rectified forward current in DC|IF(AV)||30|A| |Non-repetitive peak surge current|IFSM|TJ= 25 °C|280|| |Operatingjunction and storage temperatures|TJ, TStg||-55 to +175|°C| ## **ELECTRICAL SPECIFICATIONS** (TJ = 25 °C unless otherwise specified) |**ELECTRICAL SPECIFICATIONS**(TJ = 25 °C unless otherwise specified)TJ = 25 °C unless otherwise specified)J = 25 °C unless otherwise specified)= 25 °C unless otherwise specified)pecified)ecified))|**ELECTRICAL SPECIFICATIONS**(TJ = 25 °C unless otherwise specified)TJ = 25 °C unless otherwise specified)J = 25 °C unless otherwise specified)= 25 °C unless otherwise specified)pecified)ecified))|**ELECTRICAL SPECIFICATIONS**(TJ = 25 °C unless otherwise specified)TJ = 25 °C unless otherwise specified)J = 25 °C unless otherwise specified)= 25 °C unless otherwise specified)pecified)ecified))|**ELECTRICAL SPECIFICATIONS**(TJ = 25 °C unless otherwise specified)TJ = 25 °C unless otherwise specified)J = 25 °C unless otherwise specified)= 25 °C unless otherwise specified)pecified)ecified))|**ELECTRICAL SPECIFICATIONS**(TJ = 25 °C unless otherwise specified)TJ = 25 °C unless otherwise specified)J = 25 °C unless otherwise specified)= 25 °C unless otherwise specified)pecified)ecified))|**ELECTRICAL SPECIFICATIONS**(TJ = 25 °C unless otherwise specified)TJ = 25 °C unless otherwise specified)J = 25 °C unless otherwise specified)= 25 °C unless otherwise specified)pecified)ecified))|**ELECTRICAL SPECIFICATIONS**(TJ = 25 °C unless otherwise specified)TJ = 25 °C unless otherwise specified)J = 25 °C unless otherwise specified)= 25 °C unless otherwise specified)pecified)ecified))| |---|---|---|---|---|---|---| |**PARAMETER**|**SYMBOL**|**TEST CONDITIONS**|**MIN.**|**TYP.**|**MAX.**|**UNITS**| |Breakdown voltage,<br>blocking voltage|VBR,<br>VR|IR= 100 μA|600|-|-|V| |Forward voltage|VF|IF= 30 A|-|1.70|2.15|| |||IF= 30 A, TJ= 150 °C|-|1.40|1.65|| |Reverse leakage current|IR|VR= VRrated|-|0.02|10|μA| |||TJ= 150 °C, VR= VRrated|-|36|300|| |Junction capacitance|CT|VR= 600 V|-|19|-|pF| Revision: 28-Feb-2023 **1** Document Number: 96786 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **VS-ETH3106FP-N3** www.vishay.com ## Vishay Semiconductors |**DYNAMIC RECOVERY CHARACTERISTICS**(TJ= 25 °C unless otherwise specified)|**DYNAMIC RECOVERY CHARACTERISTICS**(TJ= 25 °C unless otherwise specified)|**DYNAMIC RECOVERY CHARACTERISTICS**(TJ= 25 °C unless otherwise specified)|**DYNAMIC RECOVERY CHARACTERISTICS**(TJ= 25 °C unless otherwise specified)|**DYNAMIC RECOVERY CHARACTERISTICS**(TJ= 25 °C unless otherwise specified)|**DYNAMIC RECOVERY CHARACTERISTICS**(TJ= 25 °C unless otherwise specified)|**DYNAMIC RECOVERY CHARACTERISTICS**(TJ= 25 °C unless otherwise specified)|**DYNAMIC RECOVERY CHARACTERISTICS**(TJ= 25 °C unless otherwise specified)| |---|---|---|---|---|---|---|---| |**PARAMETER**|**SYMBOL**|**TEST CONDITIONS**||**MIN.**|**TYP.**|**MAX.**|**UNITS**| |Reverse recovery time|trr|IF= 1 A, dIF/dt = 100 A/μs, VR= 30 V||-|22|-|ns| |||TJ= 25 °C|IF= 30 A,<br>dIF/dt = 200 A/μs,<br>VR= 400 V|-|90|-|| |||TJ= 125 °C||-|110|-|| |Peak recovery current|IRRM|TJ= 25 °C||-|4.1|-|A| |||TJ= 125 °C||-|9.4|-|| |Reverse recovery charge|Qrr|TJ= 25 °C||-|230|-|nC| |||TJ= 125 °C||-|730|-|| ## **THERMAL - MECHANICAL SPECIFICATIONS** |**THERMAL - MECHANICAL SPECIFICATIONS**|**THERMAL - MECHANICAL SPECIFICATIONS**|**THERMAL - MECHANICAL SPECIFICATIONS**|**THERMAL - MECHANICAL SPECIFICATIONS**|**THERMAL - MECHANICAL SPECIFICATIONS**|**THERMAL - MECHANICAL SPECIFICATIONS**|**THERMAL - MECHANICAL SPECIFICATIONS**| |---|---|---|---|---|---|---| |**PARAMETER**|**SYMBOL**|**TEST CONDITIONS**|**MIN.**|**TYP.**|**MAX.**|**UNITS**| |Maximum junction and storage<br>temperature range|TJ, TStg||-55|-|175|°C| |Thermal resistance,<br>junction-to-case|RthJC||-|2.40|3.10|°C/W| |Thermal resistance,<br>junction-to-ambient|RthJA|Typical socket mount|-|45|-|| |Typical thermal resistance,<br>case-to-heatsink|RthCS|Mounting surface, flat, smooth, and greased|-|0.5|-|| |Weight|||-|2|-|g| ||||-|0.07|-|oz.| |Mounting torque|||6<br>(5)|-|12<br>(10)|kgf · cm<br>(lbf · in)| |Markingdevice||Case style TO-220 FullPAK 2L|ETH3106FP|||| Revision: 28-Feb-2023 Document Number: 96786 **2** For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **VS-ETH3106FP-N3** www.vishay.com ## Vishay Semiconductors **==> picture [197 x 165] intentionally omitted <==** **----- Start of picture text -----**<br> 1000<br>100<br>T J = 175°C<br>10<br>1 TJ = 125 °C<br>TJ = 25°C<br>0.1<br> 0 0.5 1.0 1.5 2.0 2.5 3.0<br>VF - Forward Voltage Drop (V)<br> - Instantaneous Forward Current (A)<br>IF<br>**----- End of picture text -----**<br> Fig. 1 - Forward Voltage Drop Characteristics **==> picture [201 x 164] intentionally omitted <==** **----- Start of picture text -----**<br> 1000<br>100<br>10<br>0 100 200 300 400 500 600<br>VR - Reverse Voltage (V)<br> - Junction Capacitance (pF)<br>T<br>C<br>**----- End of picture text -----**<br> Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage **==> picture [203 x 165] intentionally omitted <==** **----- Start of picture text -----**<br> 1000<br>100 T J = 175 °C<br>TJ = 150 ° C<br>10<br>TJ = 125 °C<br>1<br>0.1<br>TJ = 25 °C<br>0.01<br>0.001<br>0 100 200 300 400 500 600<br>VR - Reverse Voltage (V)<br> - Reverse Current (µA)<br>IR<br>**----- End of picture text -----**<br> Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage **==> picture [197 x 166] intentionally omitted <==** **----- Start of picture text -----**<br> 80<br>70 RMS limit<br>60<br>50<br>40 D = 0.01<br>D = 0.05<br>30 D = 0.10<br>D = 0.20<br>20 D = 0.50<br>DC<br>10<br>0<br>0 5 10 15 20 25 30 35 40 45<br>IF(AV) - Average Forward Current (A)<br>Average Power Loss (W)<br>**----- End of picture text -----**<br> Fig. 4 - Forward Power Loss Characteristics **==> picture [414 x 163] intentionally omitted <==** **----- Start of picture text -----**<br> 10<br>1<br>0.50<br>0.1 0.20<br>0.10<br>DC<br>0.05<br>0.02<br>0.01<br>0.01<br>0.00001 0.0001 0.001 0.01 0.1 1 10 100<br>t1 - Rectangular Pulse Duration (s)<br>C/W)<br>°<br>- Thermal Impedance<br>thJC Junction to Case (<br>Z<br>**----- End of picture text -----**<br> **==> picture [200 x 9] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 5 - Transient Thermal Impedance, Junction to Case<br>**----- End of picture text -----**<br> Revision: 28-Feb-2023 Document Number: 96786 **3** For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **VS-ETH3106FP-N3** www.vishay.com ## Vishay Semiconductors **==> picture [472 x 164] intentionally omitted <==** **----- Start of picture text -----**<br> 170 1400<br>160<br>150 VR = 400 V 1200 V R = 400 V<br>140 IF = 30 A<br>130 1000 TJ = 125 °C<br>120<br>800<br>110<br>100 I F = 30 A 600<br>90 T J = 125°C<br>80 400<br>70<br>6050 ITFJ= 30 A = 25°C 200 T IFJ = 30 A = 25 °C<br>40 0<br>0 200 400 600 800 1000 0 200 400 600 800 1000<br>dIF/dt (A/µs) dIF/dt (A/µs)<br> (ns)trr (nC)Qrr<br>**----- End of picture text -----**<br> Fig. 6 - Typical Reverse Recovery Time vs. dIF/dt Fig. 7 - Typical Reverse Recovery Charge vs. dIF/dt **==> picture [206 x 165] intentionally omitted <==** **----- Start of picture text -----**<br> 35<br>30 V R = 400 V<br>25 I F = 30 A<br>TJ = 125°C<br>20<br>15<br>10<br>IF = 30 A<br>5 TJ = 25°C<br>0<br>0 200 400 600 800 1000<br>dIF/dt (A/µs)<br> (ns)<br>Irr<br>**----- End of picture text -----**<br> Fig. 8 - Typical Reverse Recovery Current vs. dIF/dt Revision: 28-Feb-2023 Document Number: 96786 **4** For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **VS-ETH3106FP-N3** **==> picture [77 x 10] intentionally omitted <==** **----- Start of picture text -----**<br> www.vishay.com<br>**----- End of picture text -----**<br> ## Vishay Semiconductors **==> picture [294 x 179] intentionally omitted <==** **----- Start of picture text -----**<br> (3)<br>trr<br>ta tb<br>IF<br>t0 t10 %<br>0<br>0.1 IRRM<br>(2)<br>IRRM Qrr [(4)]<br>di(rec)M/dt (5)<br>(1) diF/dt<br>**----- End of picture text -----**<br> Fig. 9 - Reverse Recovery Waveform and Definitions ## **Notes** - (1) diF/dt - rate of change of current through zero crossing - (2) IRRM - peak reverse recovery current - (3) trr - reverse recovery time measured from t0, crossing point of negative going IF, to point t10%, 0.1 IRRM - (4) Qrr - area under curve defined by t0 and t10 % t10 % Qrr = I(t)dt t0 > (5) di(rec)M/dt - peak rate of change of current during tb portion of trr ## **ORDERING INFORMATION TABLE** |**Device code**|**VS-**|**VS-**||**E**<br>**T**<br>**H**<br>**31**|**E**<br>**T**<br>**H**<br>**31**|**06**|**FP**|**-N3**|| |---|---|---|---|---|---|---|---|---|---| |||1||5<br>3<br>2<br>4||6|7|8|| ||**1**||-||Vishay Semiconductors product||||| ||**2**||-||Circuit confguration:||||| ||||||E = single||||| ||**3**||-||T = TO-220||||| ||**4**||-||H = hyperfast recovery time||||| ||**5**||-||Current code: 31 = 30 A||||| ||**6**||-||Voltage code: 06 = 600 V||||| ||**7**||-<br>||FP = TO-220 FullPAK 2L||||| ||**8**||-||Environmental digit:||||| ||||||-N3 = halogen-free, RoHS-compliant, and totally||||lead (Pb)-free| |**LINKS TO RELATED DOCUMENTS**|**LINKS TO RELATED DOCUMENTS**|| |---|---|---| |Dimensions||www.vishay.com/doc?96157| |Part markinginformation||www.vishay.com/doc?95392| Document Number: 96786 Revision: 28-Feb-2023 **5** For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **Legal Disclaimer Notice** Vishay www.vishay.com ## **Disclaimer** ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer's technical experts. Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein. Hyperlinks included in this datasheet may direct users to third-party websites. These links are provided as a convenience and for informational purposes only. Inclusion of these hyperlinks does not constitute an endorsement or an approval by Vishay of any of the products, services or opinions of the corporation, organization or individual associated with the third-party website. Vishay disclaims any and all liability and bears no responsibility for the accuracy, legality or content of the third-party website or for that of subsequent links. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. _**© 2023 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED**_ Revision: 01-Jan-2023 Document Number: 91000 **1**
Updated at June 4, 2026
Vishay is a global leader in the manufacturing of discrete semiconductors and passive electronic components. Renowned for its exceptional quality and engineering expertise, the company produces highly reliable solutions that drive innovation across the industrial, automotive, telecommunications, and consumer electronics markets. From advanced factory automation to vehicle electrification, Vishay components provide the foundational building blocks for modern electronic design. The company's expansive portfolio is heavily focused on efficient power management, signal routing, and energy storage. Within its passive component lineup, Vishay is recognized for its extensive array of high-performance capacitors, including robust aluminium electrolytic, film, and polymer variants, alongside highly efficient power inductors. In the realm of discrete semiconductors, Vishay is a premier manufacturer of single and dual MOSFETs, as well as a vast selection of Schottky, Zener, and fast-recovery rectifier diodes designed for demanding power applications. Furthermore, Vishay delivers industry-leading circuit protection and thermal management solutions. With a broad offering of transient voltage suppressors (TVS diodes) and temperature-sensing NTC thermistors, these components are engineered to safeguard sensitive circuitry against both electrical and thermal overstress. By combining this vital mix of advanced discretes and passives, Vishay enables engineers to develop robust, space-saving, and highly resilient electronic systems.
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