VS-ETH1506FP-M3

Fast / Ultrafast Diode, 600 V, 15 A, Single, 2.45 V, 36 ns, 160 A

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Manufacturer: VISHAY
Product type: Fast & Ultrafast Recovery Rectifier Diodes
Repetitive Reverse Voltage Vrrm Max:600V; Forward Current If(AV):15A; Diode Configuration:Single; Forward Voltage VF Max:2.45V; Reverse Recovery Time trr Max:36ns; Forward Surge Curr
SVHC: No SVHC (17-Dec-2014)
No. of Pins: 2 Pin
Product Range: VS-ET
Qualification: -
Diode Case Style: TO-220FP
Diode Configuration: Single
Forward Voltage Max: 2.45V
Forward Surge Current: 160A
Reverse Recovery Time: 36ns
Average Forward Current: 15A
Operating Temperature Max: 175°C
Repetitive Peak Reverse Voltage: 600V

Delivery and price
Units per pack	5000
Price	0.531 €
Current stock	10+
Lead time	30 days

Datasheet

## **VS-ETH1506-M3, VS-ETH1506FP-M3** 

## Vishay Semiconductors 

## **Hyperfast Rectifier, 15 A FRED Pt[®]** 

## **FEATURES** 

- Hyperfast soft recovery time 

- Low forward voltage drop 

- 175 °C operating junction temperature 

- Low leakage current 

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**----- Start of picture text -----**<br>
2L TO-220AC 2L TO-220 FULL-PAK<br>Base<br>cathode<br>2<br>1 3 1 2<br>Cathode Anode Cathode Anode<br>VS-ETH1506-M3 VS-ETH1506FP-M3<br>**----- End of picture text -----**<br>


## **PRODUCT SUMMARY** 

|**PRODUCT SUMMARY**|**PRODUCT SUMMARY**|
|---|---|
|Package|2L TO-220AC, 2L TO-220FP|
|IF(AV)|15 A|
|VR|600 V|
|VFat IF|2.45 V|
|trr(typ.)|21 ns|
|TJmax.|175 °C|
|Diode variation|Single die|



- Fully isolated package (VINS = 2500 VRMS) 

- True 2 pin package 

- Compliant to RoHS Directive 2002/95/EC 

- Halogen-free according to IEC 61249-2-21 definition 

- Designed and qualified according to JEDEC-JESD47 

## **DESCRIPTION/APPLICATIONS** 

Hyperfast recovery rectifiers designed with optimized performance of forward voltage drop, hyperfast recovery time, and soft recovery. 

The planar structure and the platinum doped life time control guarantee the best overall performance, ruggedness and reliability characteristics. 

These devices are intended for use in PFC boost stage in the AC/DC section of SMPS, inverters or as freewheeling diodes. 

The extremely optimized stored charge and low recovery current minimize the switching losses and reduce over dissipation in the switching element and snubbers. 

## **ABSOLUTE MAXIMUM RATINGS** 

|**ABSOLUTE MAXIMUM RATINGS**|**ABSOLUTE MAXIMUM RATINGS**|**ABSOLUTE MAXIMUM RATINGS**|**ABSOLUTE MAXIMUM RATINGS**|**ABSOLUTE MAXIMUM RATINGS**|
|---|---|---|---|---|
|**PARAMETER**|**SYMBOL**|**TEST CONDITIONS**|**VALUES**|**UNITS**|
|Peak repetitive reverse voltage|VRRM||600|V|
|Average rectified forward current in DC<br>FULL-PAK|IF(AV)|TC= 149 °C|15|A|
|||TC= 94 °C|||
|Non-repetitive peak surge current|IFSM|TJ= 25 °C|160||
|Operating junction and storage temperatures|TJ, TStg||- 65 to 175|°C|



|**ELECTRICAL SPECIFICATIONS**(TJ= 25 °C unless otherwise specified)<br>~~Pn~~<br>~~eeGGDCO~~|**ELECTRICAL SPECIFICATIONS**(TJ= 25 °C unless otherwise specified)<br>~~Pn~~<br>~~eeGGDCO~~|**ELECTRICAL SPECIFICATIONS**(TJ= 25 °C unless otherwise specified)<br>~~Pn~~<br>~~eeGGDCO~~|**ELECTRICAL SPECIFICATIONS**(TJ= 25 °C unless otherwise specified)<br>~~Pn~~<br>~~eeGGDCO~~|**ELECTRICAL SPECIFICATIONS**(TJ= 25 °C unless otherwise specified)<br>~~Pn~~<br>~~eeGGDCO~~|**ELECTRICAL SPECIFICATIONS**(TJ= 25 °C unless otherwise specified)<br>~~Pn~~<br>~~eeGGDCO~~|**ELECTRICAL SPECIFICATIONS**(TJ= 25 °C unless otherwise specified)<br>~~Pn~~<br>~~eeGGDCO~~|
|---|---|---|---|---|---|---|
|**PARAMETER**<br>~~ee~~|**SYMBOL**<br>~~GG~~|**TEST CONDITIONS**<br>~~GG~~|**MIN.**<br>~~GG~~|**TYP.**<br>~~DCO~~|**MAX.**<br>~~DCO~~|**UNITS**|
|Breakdown voltage,<br>blockingvoltage<br>~~ee ~~<br>~~ty~~<br>~~——_————EEEE=~~|VBR,<br>VR<br> ~~GG~~<br>~~ty~~<br>~~——_————EEEE=~~|IR= 100 μA<br>~~GG~~<br>~~ty~~<br>~~——_————EEEE=~~|600<br>~~GG ~~<br>~~ty~~<br>~~——_————EEEE=~~|-<br> ~~DCO~~<br>~~ty~~<br>~~——_————EEEE=~~|-<br>~~DCO~~<br>~~ty~~<br>~~——_————EEEE=~~|V|
|Forward voltage<br>~~ty~~<br>~~——_————EEEE=~~|VF<br>~~ty~~<br>~~——_————EEEE=~~|IF= 15 A<br>~~ty~~<br>~~——_————EEEE=~~|-<br>~~ty~~<br>~~——_————EEEE=~~|1.8<br>~~ty~~<br>~~——_————EEEE=~~|2.45<br>~~ty~~<br>~~——_————EEEE=~~||
|||IF= 15 A, TJ= 150 °C<br>~~——_————EEEE=~~<br>~~a~~|-<br>~~——_————EEEE=~~<br>~~a~~|1.25<br>~~——_————EEEE=~~<br>~~a~~|1.6<br>~~——_————EEEE=~~<br>~~a~~||
|Reverse leakage current<br>~~——_————EEEE=~~<br>~~rrr~~|IR<br>~~——_————EEEE=~~<br>~~rrr~~|VR= VRrated<br>~~——_————EEEE=~~<br>~~rrr~~|-<br>~~——_————EEEE=~~<br>~~rrr~~|0.01<br>~~——_————EEEE=~~<br>~~rrr~~|15<br>~~——_————EEEE=~~<br>~~rrr~~|μA<br>~~rrr~~|
|||TJ= 150 °C, VR= VRrated<br>~~rrr~~<br>~~a~~|-<br>~~rrr~~<br>~~a~~|20<br>~~rrr~~<br>~~a~~|200<br>~~rrr~~<br>~~a~~||
|Junction capacitance<br>~~GG~~|CT<br>~~GG~~|VR= 600 V<br>~~GG~~|-<br>~~GG~~|12<br>~~GG~~|-<br>~~GG~~|pF<br>~~GG~~|
|Series inductance<br>~~GF~~|LS<br>~~GF~~|Measured lead to lead 5 mm from package body<br>~~GF~~|-<br>~~GF~~|8<br>~~GF~~|-<br>~~GF~~|nH<br>~~GF~~|



Document Number: 93522 For technical questions within your region, please contact one of the following: www.vishay.com Revision: 11-Mar-11 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

## **VS-ETH1506-M3, VS-ETH1506FP-M3** 

## Vishay Semiconductors Hyperfast Rectifier, 15 A FRED Pt[®] 

**==> picture [59 x 48] intentionally omitted <==**

## **DYNAMIC RECOVERY CHARACTERISTICS** (TJ = 25 °C unless otherwise specified) 

|**DYNAMIC RECOVERY CHARACTERISTICS**(TJ= 25 °C unless otherwise specified)|**DYNAMIC RECOVERY CHARACTERISTICS**(TJ= 25 °C unless otherwise specified)|**DYNAMIC RECOVERY CHARACTERISTICS**(TJ= 25 °C unless otherwise specified)|**DYNAMIC RECOVERY CHARACTERISTICS**(TJ= 25 °C unless otherwise specified)|**DYNAMIC RECOVERY CHARACTERISTICS**(TJ= 25 °C unless otherwise specified)|**DYNAMIC RECOVERY CHARACTERISTICS**(TJ= 25 °C unless otherwise specified)|**DYNAMIC RECOVERY CHARACTERISTICS**(TJ= 25 °C unless otherwise specified)|**DYNAMIC RECOVERY CHARACTERISTICS**(TJ= 25 °C unless otherwise specified)|
|---|---|---|---|---|---|---|---|
|**PARAMETER**|**SYMBOL**|**TEST CONDITIONS**||**MIN.**|**TYP.**|**MAX.**|**UNITS**|
|Reverse recovery time|trr|IF= 1 A, dIF/dt = 100 A/μs, VR= 30 V||-|21|26|ns|
|||IF= 15 A, dIF/dt = 100 A/μs, VR= 30 V||-|25|36||
|||TJ= 25 °C|IF= 15 A<br>dIF/dt = 200 A/μs<br>VR= 390 V|-|29|-||
|||TJ= 125 °C||-|65|-||
|Peak recovery current|IRRM|TJ= 25 °C||-|3.9|-|A|
|||TJ= 125 °C||-|7.0|-||
|Reverse recovery charge|Qrr|TJ= 25 °C||-|60|-|nC|
|||TJ= 125 °C||-|240|-||
|Reverse recovery time|trr|TJ= 125 °C|IF= 15 A<br>dIF/dt = 800 A/μs<br>VR= 390 V|-|42|-|ns|
|Peak recovery current|IRRM|||-|21|-|A|
|Reverse recovery charge|Qrr|||-|480|-|nC|



## **THERMAL - MECHANICAL SPECIFICATIONS** 

|**THERMAL - MECHANICAL SPECIFICATIONS**|**THERMAL - MECHANICAL SPECIFICATIONS**|**THERMAL - MECHANICAL SPECIFICATIONS**|**THERMAL - MECHANICAL SPECIFICATIONS**|**THERMAL - MECHANICAL SPECIFICATIONS**|**THERMAL - MECHANICAL SPECIFICATIONS**|**THERMAL - MECHANICAL SPECIFICATIONS**|**THERMAL - MECHANICAL SPECIFICATIONS**|
|---|---|---|---|---|---|---|---|
|**PARAMETER**||**SYMBOL**|**TEST CONDITIONS**|**MIN.**|**TYP.**|**MAX.**|**UNITS**|
|Maximum junction and storage<br>temperature range||TJ, TStg||- 65|-|175|°C|
|Thermal resistance,<br>junction to case||RthJC||-|1.2|1.4|°C/W|
||FULL-PAK|||-|3.7|4.3||
|Thermal resistance,<br>junction to ambient||RthJA|Typical socket mount|-|-|70||
|Typical thermal resistance,<br>case to heatsink||RthCS|Mounting surface, flat, smooth and<br>greased|-|0.5|-||
|Weight||||-|2|-|g|
|||||-|0.07|-|oz.|
|Mounting torque||||6<br>(5)|-|12<br>(10)|kgf · cm<br>(lbf · in)|
|Marking device|||Case style 2L TO-220AC|ETH1506||||
||||Case style 2L TO-220 FULL-PAK|ETH1506FP||||



For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com This datasheet is subject to change without notice. 

www.vishay.com 2 

Document Number: 93522 Revision: 11-Mar-11 

> THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**VS-ETH1506-M3, VS-ETH1506FP-M3** 

**==> picture [59 x 48] intentionally omitted <==**

## Hyperfast Rectifier, 15 A FRED Pt[®] Vishay Semiconductors 

**==> picture [199 x 368] intentionally omitted <==**

**----- Start of picture text -----**<br>
100<br>Tj = 175°C<br>10<br>Tj = 150°C<br>Tj = 25°C<br>1<br>0.5 1.0 1.5 2.0 2.5 3.0<br>Forward Voltage Drop - VF  (V)<br>Instantaneous Forward Current - I (A)F<br>**----- End of picture text -----**<br>


Fig. 1 - Typical Forward Voltage Drop Characteristics 

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**----- Start of picture text -----**<br>
1000<br>175°C<br>100<br>150°C<br>10<br>125°C<br>1 100°C<br>75°C<br>0.1<br>50°C<br>0.01<br>25 ° C<br>0.001<br>0.0001<br>0 100 200 300 400 500 600<br>Reverse Voltage - VR (V)<br> Fig. 2 - Typical Values of Reverse Current vs.<br>Reverse Voltage<br>1000<br>100<br>10<br>1<br>0 100 200 300 400 500 600<br>Reverse Voltage - VR (V)<br> Fig. 3 - Typical Junction Capacitance vs.<br>Reverse Voltage<br> (µA)<br>R<br>Reverse Current - I<br>Junction Capacitance - C (pF)T<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
10<br>D = 0.5<br>1 D = 0.2<br>D = 0.1<br>D = 0.05<br>0.1 D = 0.02<br>Single Pulse<br>D = 0.01 (Thermal Resistance)<br>0.01<br>1E-05 1E-04 1E-03 1E-02 1E-01 1E+00<br>t1, Rectangular Pulse Duration (Seconds)<br> Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics<br> (°C/W)<br>thJC<br>Thermal Impedance Z<br>**----- End of picture text -----**<br>


Document Number: 93522 For technical questions within your region, please contact one of the following: Revision: 11-Mar-11 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com This datasheet is subject to change without notice. 

www.vishay.com 3 

> THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

## **VS-ETH1506-M3, VS-ETH1506FP-M3** 

Vishay Semiconductors Hyperfast Rectifier, 15 A FRED Pt[®] 

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**==> picture [310 x 148] intentionally omitted <==**

**----- Start of picture text -----**<br>
10<br>D = 0.5<br>D = 0.2<br>1 D = 0.1<br>D = 0.05<br>D = 0.02 Single Pulse<br>(Thermal Resistance)<br>D = 0.01<br>0.1<br>1E-05 1E-04 1E-03 1E-02 1E-01 1E+00 1E+01 1E+02<br> (°C/W)<br>thJC<br>Thermal Impedance Z<br>**----- End of picture text -----**<br>


t1, Rectangular Pulse Duration (Seconds) 

Fig. 5 - Maximum Thermal Impedance ZthJC Characteristics (FULL-PAK) 

**==> picture [465 x 186] intentionally omitted <==**

**----- Start of picture text -----**<br>
180 180<br>160<br>170<br>140<br>160 120 DC<br>DC<br>100<br>150<br>80<br>60<br>140<br>40<br>130 20<br>0 2 4 6 8 10 12 14 16 0 2 4 6 8 10 12 14 16<br>Average Forward Current - IF(AV)(A) Average Forward Current - IF(AV)(A)<br> Fig. 6 - Maximum Allowable Case Temperature vs.  Fig. 7 - Maximum Allowable Case Temperature vs.<br>Average Forward Current Average Forward Current (FULL-PAK)<br>Allowable  Case Temperature  (°C) Allowable  Case Temperature  (°C)<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
30<br>RMS Limit<br>25<br>20<br>D = 0.01<br>15 D = 0.02<br>D = 0.05<br>10 D = 0.1<br>D = 0.2<br>D = 0.5<br>5 DC<br>0<br>0 5 10 15 20 25<br>Average Forward Current - IF(AV) (A)<br> Fig. 8 - Forward Power Loss Characteristics<br>Average    Power   Loss   ( Watts )<br>**----- End of picture text -----**<br>


www.vishay.com For technical questions within your region, please contact one of the following: 4 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT 

Document Number: 93522 Revision: 11-Mar-11 

www.vishay.com/doc?91000 

**VS-ETH1506-M3, VS-ETH1506FP-M3** 

**==> picture [59 x 48] intentionally omitted <==**

## Hyperfast Rectifier, 15 A FRED Pt[®] Vishay Semiconductors 

**==> picture [171 x 214] intentionally omitted <==**

**----- Start of picture text -----**<br>
100<br>90<br>80<br>70<br>If  =  15 A ,  12 5 °C<br>60<br>50<br>40<br>If = 15  A , 25°C<br>30<br>20 typical value<br>10<br>100 1000<br>di F /dt   (A/µs )<br>trr   ( ns )<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
 Fig. 9 - Typical Reverse Recovery vs. dIF/dt<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
600<br>500<br>400 If  =  15 A,  1 25°C<br>300<br>200<br>If = 1 5  A,  2 5 °C<br>100<br>t ypic a l v a lue<br>0<br>100 1000<br>di F /dt   (A/µs )<br>Qrr  ( nC )<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
 Fig. 10 - Typical Stored Charge vs. dIF/dt<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
VR = 200 V<br>0.01 Ω<br>L = 70 μH<br>D.U.T.<br>D<br>dIF/dt<br>adjust<br>G IRFP250<br>S<br>**----- End of picture text -----**<br>


Fig. 11 - Reverse Recovery Parameter Test Circuit 

**==> picture [273 x 232] intentionally omitted <==**

**----- Start of picture text -----**<br>
(3)<br>IF trr<br>ta tb<br>0<br>(4)<br>Qrr<br>(2)<br>IRRM 0.5 IRRM<br>dI(rec)M/dt (5)<br>0.75 IRRM<br>(1) dIF/dt<br>(1) dIF/dt - rate of change of current  (4) Qrr - area under curve defined by trr<br>      through zero crossing       and IRRM<br>(2) IRRM - peak reverse recovery current Qrr = t      2rr x IRRM<br>     from zero crossing point of negative (3) trr - reverse recovery time measured  (5) dI(rec)M/dt - peak rate of change of<br>     going IF to point where a line passing        current during tb portion of trr<br>    through 0.75 IRRM and 0.50 IRRM<br>     extrapolated to zero current.<br> Fig. 12 - Reverse Recovery Waveform and Definitions<br>**----- End of picture text -----**<br>


Document Number: 93522 For technical questions within your region, please contact one of the following: Revision: 11-Mar-11 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com This datasheet is subject to change without notice. 

www.vishay.com 5 

> THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

Vishay Semiconductors Hyperfast Rectifier, 15 A FRED Pt[®] 

## **VS-ETH1506-M3, VS-ETH1506FP-M3** 

**==> picture [59 x 48] intentionally omitted <==**

## **ORDERING INFORMATION TABLE** 

|**Device code**|**VS-**|**VS-**|||**E**<br>**T**<br>**H**|**15**|**06**|**FP**|**-M3**||
|---|---|---|---|---|---|---|---|---|---|---|
|||1|||3<br>2<br>4|5|6|7|8||
||**1**||-||Vishay Semiconductors product||||||
||**2**||-||Circuit configuration:||||||
||||||E = Single diode||||||
||**3**||-||T = TO-220||||||
||**4**||-||H = Hyperfast recovery time||||||
||**5**||-||Current code: 15 = 15 A||||||
||**6**||-||Voltage code: 06 =|600 V|||||
||**7**||-||None = TO-220||||||
||||||FP = FULL-PAK||||||
||**8**||-||Environmental digit:||||||
||||||-M3 = Halogen-free, RoHS compliant and||||terminations lead (Pb)-free||



|**ORDERING INFORMATION** (Example)|**ORDERING INFORMATION** (Example)|**ORDERING INFORMATION** (Example)|**ORDERING INFORMATION** (Example)|**ORDERING INFORMATION** (Example)|**ORDERING INFORMATION** (Example)|
|---|---|---|---|---|---|
|**PREFERRED P/N**|**QUANTITY PER TUBE**||**MINIMUM ORDER QUANTITY**||**PACKAGING DESCRIPTION**|
|VS-ETH1506-M3||50|1000||Antistatic plastic tube|
|VS-ETH1506FP-M3||50|1000||Antistatic plastic tube|
|||||||
|||**LINKS TO RELATED DOCUMENTS**||||
|Dimensions||2L TO-220AC||www.vishay.com/doc?95259||
|||2L TO-220 FULL-PAK||www.vishay.com/doc?95260||
|Part marking information||2L TO-220AC||www.vishay.com/doc?95391||
|||2L TO-220 FULL-PAK||www.vishay.com/doc?95392||



For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com This datasheet is subject to change without notice. 

www.vishay.com 6 

Document Number: 93522 Revision: 11-Mar-11 

> THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**Outline Dimensions** 

Vishay Semiconductors 

**==> picture [59 x 48] intentionally omitted <==**

www.vishay.com 

## **True 2 Pin TO-220** 

## **DIMENSIONS** in millimeters and inches 

**==> picture [300 x 277] intentionally omitted <==**

**----- Start of picture text -----**<br>
0.002"<br>A 0.05 mm<br>E A<br>Ø P<br>B F<br>Q<br>H1<br>D<br>Term. 4<br>0.150" REF.<br>45°<br>Ø 2.0 mm REF.<br>L1<br>b1<br>L b<br>c<br>60°<br>1 2<br>J1<br>e<br>**----- End of picture text -----**<br>


|**SYMBOL**|**MILLIMETERS**|**MILLIMETERS**|**INCHES**|**INCHES**|
|---|---|---|---|---|
||**MIN.**|**MAX.**|**MIN.**|**MAX.**|
|A|4.32|4.57|0.170|0.180|
|b|0.71|0.91|0.028|0.036|
|b1|1.15|1.39|0.045|0.055|
|c|0.36|0.53|0.014|0.021|
|D|14.99|15.49|0.590|0.610|
|E|10.04|10.41|0.395|0.410|
|e|5.08 BSC||0.200 BSC||
|F|1.22|1.37|0.048|0.054|
|H1|5.97|6.47|0.235|0.255|
|J1|2.54|2.79|0.100|0.110|
|L|13.47|13.97|0.530|0.550|
|L1 (1)|3.31|3.81|0.130|0.150|
|Ø P|3.79|3.88|0.149|0.153|
|Q|2.60|2.84|0.102|0.112|



## **Notes** 

> (1) Lead dimension and finish uncontrolled in L1 

- These dimensions are within allowable dimensions of JEDEC TO-220AB rev. J outline dated 3-24-87 

- Controling dimension: Inch 

Revision: 05-Dec-12 

Document Number: 95259 

**1** 

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**Outline Dimensions** 

Vishay Semiconductors 

**==> picture [59 x 48] intentionally omitted <==**

www.vishay.com 

## **True 2 Pin TO-220 FULL-PAK** 

## **DIMENSIONS** in millimeters and inches 

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**----- Start of picture text -----**<br>
A<br>Ø Q F E<br>Q1<br>H1<br>D<br>Q2<br>θ<br>L1 b1<br>L<br>b<br>e C<br>J1<br>**----- End of picture text -----**<br>


|**SYMBOL**|**MILLIMETERS**|**MILLIMETERS**|**INCHES**|**INCHES**|
|---|---|---|---|---|
||**MIN.**|**MAX.**|**MIN.**|**MAX.**|
|A|4.53|4.93|0.178|0.194|
|b|0.71|0.91|0.028|0.036|
|b1|1.15|1.39|0.045|0.055|
|C|0.36|0.53|0.014|0.021|
|D|15.67|16.07|0.617|0.633|
|E|9.96|10.36|0.392|0.408|
|e|5.08 typical||0.200 typical||
|F|2.34|2.74|0.092|0.107|
|H1|6.50|6.90|0.256|0.272|
|J1|2.56|2.96|0.101|0.117|
|L|12.78|13.18|0.503|0.519|
|L1|2.23|2.63|0.088|0.104|
|Ø Q|2.98|3.38|0.117|0.133|
|Q1|3.10|3.50|0.122|0.138|
|Q2|14.80|15.20|0.583|0.598|
||0°|5°|0°|5°|



Revision: 05-Dec-12 

Document Number: 95260 

**1** 

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**Legal Disclaimer Notice** Vishay 

www.vishay.com 

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## **Disclaimer** 

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 

Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product.  To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. 

Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications.  Such statements are not binding statements about the suitability of products for a particular application.  It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application.  Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time.  All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. 

Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk.  Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. 

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay.  Product names and markings noted herein may be trademarks of their respective owners. 

## **Material Category Policy** 

**Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant.** 

**Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.** 

**Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards.  Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition.  We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards.** 

Revision: 02-Oct-12 

Document Number: 91000 

**1**

Updated at June 4, 2026

Vishay is a global leader in the manufacturing of discrete semiconductors and passive electronic components. Renowned for its exceptional quality and engineering expertise, the company produces highly reliable solutions that drive innovation across the industrial, automotive, telecommunications, and consumer electronics markets. From advanced factory automation to vehicle electrification, Vishay components provide the foundational building blocks for modern electronic design. The company's expansive portfolio is heavily focused on efficient power management, signal routing, and energy storage. Within its passive component lineup, Vishay is recognized for its extensive array of high-performance capacitors, including robust aluminium electrolytic, film, and polymer variants, alongside highly efficient power inductors. In the realm of discrete semiconductors, Vishay is a premier manufacturer of single and dual MOSFETs, as well as a vast selection of Schottky, Zener, and fast-recovery rectifier diodes designed for demanding power applications. Furthermore, Vishay delivers industry-leading circuit protection and thermal management solutions. With a broad offering of transient voltage suppressors (TVS diodes) and temperature-sensing NTC thermistors, these components are engineered to safeguard sensitive circuitry against both electrical and thermal overstress. By combining this vital mix of advanced discretes and passives, Vishay enables engineers to develop robust, space-saving, and highly resilient electronic systems.

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