VS-EPH6007L-N3

**VS-EPH6007L-N3** 

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## Vishay Semiconductors 

## **Hyperfast Rectifier, 60 A FRED Pt[®]** 

## **FEATURES** 

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Base cathode<br>2<br>2<br>1<br>1 3<br>3 Cathode Anode<br>TO-247AD 2L VS-EPH6007L-N3<br>**----- End of picture text -----**<br>


- Low forward voltage drop 

- Hyperfast soft recovery time 

- 175 °C operating junction temperature 

- Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 

## **DESCRIPTION / APPLICATIONS** 

|**PRIMARY CHARACTERISTICS**|**PRIMARY CHARACTERISTICS**|
|---|---|
|IF(AV)|60 A|
|VR|650 V|
|VFat IF|1.4 V|
|trrtyp.|65 ns|
|TJmax.|175 °C|
|Package|TO-247AD 2L|
|Circuit configuration|Single|



Hyperfast recovery rectifiers designed with optimized performance of forward voltage drop, hyperfast recovery time, and soft recovery. 

The planar structure and the platinum doped life time control guarantee the best overall performance, ruggedness and reliability characteristics. 

These devices are intended for use in PFC Boost stage in the AC/DC section of SMPS, inverters or as freewheeling diodes. 

The extremely optimized stored charge and low recovery current minimize the switching losses and reduce over dissipation in the switching element and snubbers. 

## **ABSOLUTE MAXIMUM RATINGS** 

|**PARAMETER**|**SYMBOL**|**TEST CONDITIONS**|**MAX.**|**UNITS**|
|---|---|---|---|---|
|Repetitive peak reverse voltage|VRRM||650|V|
|Average rectified forward current|IF(AV)|TC= 98 °C (d = 0.50)|60|A|
|Non-repetitive peak surge current|IFSM|TC= 25 °C, tp= 8.3 ms; half sine wave|520||



Operating junction and storage temperatures TJ, TStg -55 to +175 °C 

|**ELECTRICAL SPECIFICATIONS**(TJ= 25 °C unless otherwise specified)<br>~~i~~<br>~~GO~~|**ELECTRICAL SPECIFICATIONS**(TJ= 25 °C unless otherwise specified)<br>~~i~~<br>~~GO~~|**ELECTRICAL SPECIFICATIONS**(TJ= 25 °C unless otherwise specified)<br>~~i~~<br>~~GO~~|**ELECTRICAL SPECIFICATIONS**(TJ= 25 °C unless otherwise specified)<br>~~i~~<br>~~GO~~|**ELECTRICAL SPECIFICATIONS**(TJ= 25 °C unless otherwise specified)<br>~~i~~<br>~~GO~~|**ELECTRICAL SPECIFICATIONS**(TJ= 25 °C unless otherwise specified)<br>~~i~~<br>~~GO~~|**ELECTRICAL SPECIFICATIONS**(TJ= 25 °C unless otherwise specified)<br>~~i~~<br>~~GO~~|
|---|---|---|---|---|---|---|
|**PARAMETER**<br>~~ee~~|**SYMBOL**<br>~~ee~~|**TEST CONDITIONS**<br>~~ee~~<br>~~GO~~|**MIN.**<br>~~ee~~<br>~~GO~~|**TYP.**<br>~~ee~~|**MAX.**<br>~~ee~~|**UNITS**<br>~~ee~~|
|Breakdown voltage,<br>blockingvoltage<br>~~ee~~<br>~~Bf~~|VBR,<br>VR<br>~~ee~~<br>~~Bf~~|IR= 100 μA<br>~~GO~~<br>~~ee~~<br>~~++~~|650<br>~~GO~~<br>~~ee~~<br>~~++~~|-<br>~~ee~~<br>~~++~~|-<br>~~++~~|V|
|Forward voltage<br>~~Bf~~|VF<br>~~Bf~~|IF= 60 A<br>~~++~~|-<br>~~++~~<br>~~ee~~|1.8<br>~~++~~|2.2<br>~~++~~||
|||IF= 60 A, TJ= 150 °C<br>~~++~~<br>~~es~~|-<br>~~++~~<br>~~es~~<br>~~ee~~|1.4<br>~~++~~<br>~~es~~|1.8<br>~~++~~<br>~~es~~||
|Reverse leakage current<br>~~Bf~~|IR<br>~~Bf~~|VR= VRrated<br>~~++~~|-<br>~~++~~<br>~~ee~~<br>~~ee~~|0.02<br>~~++~~|30<br>~~++~~|μA|
|||TJ= 150 °C, VR= VRrated<br>~~es~~|-<br>~~es~~<br>~~ee~~|-<br>~~es~~|300<br>~~es~~||
|Junction capacitance<br>~~es~~|CT<br>~~es~~|VR= 650 V<br>~~es~~|-<br>~~ee~~<br>~~es~~|37<br>~~es~~|-<br>~~es~~|pF<br>~~es~~|
|Series inductance<br>~~es~~<br>~~ee~~|LS<br>~~es~~<br>~~ee~~|Measured lead to lead 5 mm from package body<br>~~es~~<br>~~ee~~|-<br>~~es~~<br>~~ee~~|8.0<br>~~es~~<br>~~ee~~|-<br>~~es~~<br>~~ee~~|nH<br>~~es~~<br>~~ee~~|



Revision: 15-May-2018 

Document Number: 96451 

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For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**VS-EPH6007L-N3** 

Vishay Semiconductors 

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www.vishay.com 

## **DYNAMIC RECOVERY CHARACTERISTICS** (TJ = 25 °C unless otherwise specified) 

|**DYNAMIC RECOVERY CHARACTERISTICS**(TJ= 25 °C unless otherwise specified)|**DYNAMIC RECOVERY CHARACTERISTICS**(TJ= 25 °C unless otherwise specified)|**DYNAMIC RECOVERY CHARACTERISTICS**(TJ= 25 °C unless otherwise specified)|**DYNAMIC RECOVERY CHARACTERISTICS**(TJ= 25 °C unless otherwise specified)|**DYNAMIC RECOVERY CHARACTERISTICS**(TJ= 25 °C unless otherwise specified)|**DYNAMIC RECOVERY CHARACTERISTICS**(TJ= 25 °C unless otherwise specified)|**DYNAMIC RECOVERY CHARACTERISTICS**(TJ= 25 °C unless otherwise specified)|**DYNAMIC RECOVERY CHARACTERISTICS**(TJ= 25 °C unless otherwise specified)|
|---|---|---|---|---|---|---|---|
|**PARAMETER**|**SYMBOL**|**TEST CONDITIONS**||**MIN.**|**TYP.**|**MAX.**|**UNITS**|
|Reverse recovery time|trr|IF= 1 A, dIF/dt = 100 A/μs, VR= 30 V||-|44|-|ns|
|||TJ= 25 °C|IF= 60 A<br>dIF/dt = 1000 A/μs<br>VR= 400 V|-|65|-||
|||TJ= 125 °C||-|94|-||
|Peak recovery current|IRRM|TJ= 25 °C||-|21|-|A|
|||TJ= 125 °C||-|40|-||
|Reverse recovery charge|Qrr|TJ= 25 °C||-|720|-|nC|
|||TJ= 125 °C||-|2300|-||



## **THERMAL - MECHANICAL SPECIFICATIONS** 

|**THERMAL - MECHANICAL SPECIFICATIONS**|**THERMAL - MECHANICAL SPECIFICATIONS**|**THERMAL - MECHANICAL SPECIFICATIONS**|**THERMAL - MECHANICAL SPECIFICATIONS**|**THERMAL - MECHANICAL SPECIFICATIONS**|**THERMAL - MECHANICAL SPECIFICATIONS**|**THERMAL - MECHANICAL SPECIFICATIONS**|
|---|---|---|---|---|---|---|
|**PARAMETER**|**SYMBOL**|**TEST CONDITIONS**|**MIN.**|**TYP.**|**MAX.**|**UNITS**|
|Maximum junction and storage<br>temperature range|TJ, TStg||-55|-|175|°C|
|Thermal resistance,<br>junction to case|RthJC||-|-|0.65|°C/W|
|Thermal resistance,<br>case to heatsink|RthCS|Mounting surface, flat, smooth, and greased|-|0.5|-||
|Weight|||-|5.5|-|g|
||||-|0.2|-|oz.|
|Mounting torque|||1.2<br>(10)|-|2.4<br>(20)|kgf · cm<br>(lbf · in)|
|Marking device||Case style TO-247 2L|EPH6007L||||



Revision: 15-May-2018 

Document Number: 96451 

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**VS-EPH6007L-N3** 

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## Vishay Semiconductors 

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100 1000<br>175 °C<br>100<br>10 TJ = 175 °C 10 150  ° C<br>1<br>1 TJ = 150°C 0.1<br>25 °C<br>0.01<br>TJ = 25 °C<br>0.1 0.001<br> 0 0.5 1.0 1.5 2.0 2.5 0 100 200 300 400 500 600 700<br>VF - Forward Voltage Drop (V) VR - Reverse Voltage (V)<br> - Reverse Current (μA)<br>IR<br> - Instantaneous Forward Current (A)<br>IF<br>**----- End of picture text -----**<br>


Fig. 1 - Typical Forward Voltage Drop Characteristics 

Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage 

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1000<br>100<br>10<br>0 100 200 300 400 500 600 700<br>VR - Reverse Voltage (V)<br> - Junction Capacitance (pF)<br>T<br>C<br>**----- End of picture text -----**<br>


Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage 

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1<br>0.1<br>0.50<br>0.20<br>0.01 0.10<br>0.05<br>DC<br>0.02<br>0.01<br>0.001<br>0.00001 0.0001 0.001 0.01 0.1 1<br>t1 - Rectangular Pulse Duration (s)<br>C/W)<br>°<br>- Thermal Impedance<br>thJC Junction to Case (<br>Z<br>**----- End of picture text -----**<br>


Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics 

Revision: 15-May-2018 

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**VS-EPH6007L-N3** 

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www.vishay.com<br>**----- End of picture text -----**<br>


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180<br>160<br>140 DC<br>120<br>Square wave (D = 0.50)<br>Rated VR applied<br>100<br>See note  [(1)]<br>80<br>0 10 20 30 40 50 60 70<br>IF(AV) - Average Forward Current (A)<br>C)<br>°<br>Allowable Case Temperature (<br>**----- End of picture text -----**<br>


Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current 

## Vishay Semiconductors 

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170<br>160<br>150 I F  = 60 A, T J  = 125 °C<br>140<br>130<br>120<br>110<br>100<br>90<br>80 I F  = 60 A, T J  = 25  ° C<br>70<br>60<br>100 1000<br>dIF/dt (A/μs)<br> (ns)<br>trr<br>**----- End of picture text -----**<br>


Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt 

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160<br>140 RMS limit<br>120<br>100<br>80 D = 0.02<br>D = 0.05<br>60 D = 0.1<br>D = 0.2<br>40 D = 0.5<br>DC<br>20<br>0<br>0 20 40 60 80 100<br>IF(AV) - Average Forward Current (A)<br>Average Power Loss (W)<br>**----- End of picture text -----**<br>


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Fig. 6 - Forward Power Loss Characteristics<br>**----- End of picture text -----**<br>


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2400<br>2200<br>2000 IF = 60 A, TJ = 125 °C<br>1800<br>1600<br>1400<br>1200<br>1000<br>800<br>600 I F = 60 A, T J = 25 °C<br>400<br>200<br>0<br>100 1000<br>dIF/dt (A/μs)<br> (nC)<br>rr<br>Q<br>**----- End of picture text -----**<br>


Fig. 8 - Typical Stored Charge vs. dIF/dt 

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(3)<br>IF trr<br>ta tb<br>0<br>(4)<br>Qrr<br>(2)<br>IRRM 0.5 IRRM<br>di(rec)M/dt (5)<br>0.75 IRRM<br>(1) diF/dt<br>(1) diF/dt - rate of change of current  (4) Qrr - area under curve defined by trr<br>      through zero crossing       and IRRM<br>(2) IRRM - peak reverse recovery current Qrr = t      2rr x IRRM<br>(3) t     from zero crossing point of negative rr - reverse recovery time measured  (5) di(rec)M/dt - peak rate of change of<br>     going IF to point where a line passing        current during tb portion of trr<br>    through 0.75 IRRM and 0.50 IRRM<br>    extrapolated to zero current.<br>**----- End of picture text -----**<br>


Fig. 9 - Reverse Recovery Waveform and Definitions 

**4** 

Revision: 15-May-2018 

Document Number: 96451 

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**VS-EPH6007L-N3** 

Vishay Semiconductors 

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www.vishay.com 

## **ORDERING INFORMATION TABLE** 

|**Device code**|**VS-**|**VS-**|||**E**<br>**P**<br>**H**|**60**|**07**|**L**|**-N3**||
|---|---|---|---|---|---|---|---|---|---|---|
|||1|||3<br>2<br>4|5|6|7|8||
||**1**||-||Vishay Semiconductors product||||||
||**2**||-||E = single diode||||||
||**3**||-||P = TO-247||||||
||**4**||-||H = hyperfast recovery time||||||
||**5**||-||Current code (60 =|60 A)|||||
||**6**||-||Voltage code (07 =|650 V)|||||
||**7**||-||L = long lead||||||
||**8**||-||Environmental digit:||||||
||||||-N3 = halogen-free,|RoHS-compliant and totally lead (Pb)-free|||||



|**ORDERING INFORMATION** (Example)|**ORDERING INFORMATION** (Example)|**ORDERING INFORMATION** (Example)|**ORDERING INFORMATION** (Example)|**ORDERING INFORMATION** (Example)|
|---|---|---|---|---|
|**PREFERRED P/N**|**QUANTITY PER TUBE**|**MINIMUM ORDER QUANTITY**||**PACKAGING DESCRIPTION**|
|VS-EPH6007L-N3|25|500||Antistatic plastic tube|
||||||
|**LINKS TO RELATED DOCUMENTS**|||||
|Dimensions|||www.vishay.com/doc?95536||
|Part marking information|||www.vishay.com/doc?95648||



Revision: 15-May-2018 

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**Outline Dimensions** 

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## Vishay Semiconductors 

## **TO-247AD 2L** 

## **DIMENSIONS** in millimeters and inches 

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(3) A A<br>B E (6) F P (Datum B)<br>S A2 Ø K M D B M<br>(2)   R/2 A  F P1<br>D2<br>Q<br>2 x R<br>D D1   (4)<br>(2)<br>1, 2 3 D 4<br>Thermal pad<br>(5)   L1<br>C (4)<br>L See view B A E1<br>0.01 M D B M<br>View A - A<br>C<br>2 x b2<br>2 x b 2 x  e  A1<br>0.10 M C A M<br>Plating (b1, b3) Base metal<br>D D<br>(c) c1 C C<br>(b, b2)<br>(4)<br>Section C - C, D - D View B<br>**----- End of picture text -----**<br>


|**SYMBOL**|**MILLIMETERS**|**MILLIMETERS**|**INCHES**|**INCHES**|**NOTES**<br>3<br>4||**SYMBOL**|**MILLIMETERS**|**MILLIMETERS**|**INCHES**|**INCHES**|**NOTES**|
|---|---|---|---|---|---|---|---|---|---|---|---|---|
||**MIN.**|**MAX.**|**MIN.**|**MAX.**||||**MIN.**|**MAX.**|**MIN.**|**MAX.**||
|A|4.65|5.31|0.183|0.209|||E|15.29|15.87|0.602|0.625|3|
|A1|2.21|2.59|0.087|0.102|||E1|13.46|-|0.53|-||
|A2|1.50|2.49|0.059|0.098|||e|5.46 BSC||0.215 BSC|||
|b|0.99|1.40|0.039|0.055|||Ø K|0.254||0.010|||
|b1|0.99|1.35|0.039|0.053|||L|19.81|20.32|0.780|0.800||
|b2|1.65|2.39|0.065|0.094|||L1|3.71|4.29|0.146|0.169||
|b3|1.65|2.34|0.065|0.092|||Ø P|3.56|3.66|0.14|0.144||
|c|0.38|0.89|0.015|0.035|||Ø P1|-|6.98|-|0.275||
|c1|0.38|0.84|0.015|0.033|||Q|5.31|5.69|0.209|0.224||
|D|19.71|20.70|0.776|0.815|||R|4.52|5.49|0.178|0.216||
|D1|13.08|-|0.515|-|||S|5.51 BSC||0.217 BSC|||
|D2|0.51|1.35|0.020|0.053|||||||||



## **Notes** 

> (1) Dimensioning and tolerancing per ASME Y14.5M-1994 

> (2) Contour of slot optional 

> (3) Dimension D and E do not include mold flash. These dimensions are measured at the outermost extremes of the plastic body 

> (4) Thermal pad contour optional with dimensions D1 and E1 

> (5) Lead finish uncontrolled in L1 

> (6) Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154") 

> (7) Outline conforms to JEDEC® outline TO-247 with exception of dimension A min., D, E min., Q min., S, and note 4 

Revision: 28-May-2018 

Document Number: 95536 

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**Legal Disclaimer Notice** Vishay 

www.vishay.com 

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## **Disclaimer** 

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 

Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product.  To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. 

Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications.  Such statements are not binding statements about the suitability of products for a particular application.  It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time.  All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts.  Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. 

Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. 

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay.  Product names and markings noted herein may be trademarks of their respective owners. 

_**© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED**_ 

Revision: 08-Feb-17 

Document Number: 91000 

**1**