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VS-E5PH3012LHN3
Fast / Ultrafast Diode, 1.2 kV, 30 A, Single, 2.3 V, 85 ns, 250 A
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: VISHAY
- Product type: Fast & Ultrafast Recovery Rectifier Diodes
- SVHC: No SVHC (04-Feb-2026)
- No. of Pins: 2 Pin
- Product Range: FRED Pt G5 Series
- Qualification: AEC-Q101
- Diode Case Style: TO-247AD
- Diode Configuration: Single
- Forward Voltage Max: 2.3V
- Forward Surge Current: 250A
- Reverse Recovery Time: 85ns
- Average Forward Current: 30A
- Operating Temperature Max: 175°C
- Repetitive Peak Reverse Voltage: 1.2kV
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 1.99 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
**VS-E5PH3012LHN3** Vishay Semiconductors www.vishay.com ## **Hyperfast Rectifier, 30 A FRED Pt[®] G5** ## **FEATURES** **==> picture [207 x 83] intentionally omitted <==** **----- Start of picture text -----**<br> Base cathode<br>2<br>2<br>1<br>1 3<br>3<br>Cathode Anode<br>TO-247AD 2L<br>**----- End of picture text -----**<br> - Hyperfast and optimized Qrr - Best in class forward voltage drop and switching losses trade off - Optimized for high speed operation - 175 °C maximum operating junction temperature - Polyimide passivation - AEC-Q101 qualified, meets JESD 201 class 2 whisker test ## **LINKS TO ADDITIONAL RESOURCES** ~~Es~~ 3D Models Application Notes |**PRIMARY CHARACTERISTICS**|**PRIMARY CHARACTERISTICS**| |---|---| |IF(AV)|30 A| |VR|1200 V| |VFat IFat 125 °C|1.7 V| |trr|32 ns| |TJmax.|175 °C| |Package|TO-247AD 2L| |Circuit configuration|Single| - Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 ## **DESCRIPTION / APPLICATIONS** Featuring a unique combination of low conduction and switching losses, this rectifier is the right choice for high frequency converters, both soft switched / resonant. Specifically designed to improve efficiency of PFC and output rectification stages of EV / HEV battery charging stations, booster stage of solar inverters and UPS applications, these devices are perfectly matched to operate with MOSFETs or high speed IGBTs. ## **MECHANICAL DATA** **Case:** TO-247AD 2L Molding compound meets UL 94 V-0 flammability rating **Terminals** : matte tin plated leads, solderable per J-STD-002 |**ABSOLUTE MAXIMUM RATINGS**|**ABSOLUTE MAXIMUM RATINGS**|**ABSOLUTE MAXIMUM RATINGS**|**ABSOLUTE MAXIMUM RATINGS**|**ABSOLUTE MAXIMUM RATINGS**| |---|---|---|---|---| |**PARAMETER**|**SYMBOL**|**TEST CONDITIONS**|**VALUES**|**UNITS**| |Repetitive peak reverse voltage|VRRM||1200|V| |Average rectified forward current|IF(AV)|TC= 111 °C, D = 0.50|30|A| |Non-repetitive peak surge current|IFSM|TC= 45 °C, tp= 10 ms, sine wave|240|| |Repetitive peak forward current|IFRM|TC= 111 °C, D = 0.50, f = 20 kHz|60|| |Operating junction and storage temperature|TJ, TStg||-55 to +175|°C| |**ELECTRICAL SPECIFICATIONS**(TJ= 25 °C unless otherwise specified)<br>~~Cn~~|**ELECTRICAL SPECIFICATIONS**(TJ= 25 °C unless otherwise specified)<br>~~Cn~~|**ELECTRICAL SPECIFICATIONS**(TJ= 25 °C unless otherwise specified)<br>~~Cn~~|**ELECTRICAL SPECIFICATIONS**(TJ= 25 °C unless otherwise specified)<br>~~Cn~~|**ELECTRICAL SPECIFICATIONS**(TJ= 25 °C unless otherwise specified)<br>~~Cn~~|**ELECTRICAL SPECIFICATIONS**(TJ= 25 °C unless otherwise specified)<br>~~Cn~~|**ELECTRICAL SPECIFICATIONS**(TJ= 25 °C unless otherwise specified)<br>~~Cn~~| |---|---|---|---|---|---|---| |**PARAMETER**<br>~~CnGe~~|**SYMBOL**<br>~~Ge~~|**TEST CONDITIONS**<br>~~Ge~~|**MIN.**<br>~~Ge~~|**TYP.**<br>~~Ge~~|**MAX.**<br>~~Ge~~|**UNITS**<br>~~Ge~~| |Breakdown voltage, blocking voltage<br>~~ee~~|VBR,<br>VR<br>~~ee~~|IR= 100 μA<br>~~ee~~|1200<br>~~ee~~|-<br>~~ee~~|-<br>~~ee~~|V| |Forward voltage<br>~~OO~~|VF<br>~~OO~~|IF= 30 A<br>~~OO~~|-<br>~~OO~~|1.9<br>~~OO~~|2.5<br>~~OO~~|| |||IF= 30 A, TJ= 125 °C<br>~~OO~~<br>~~es~~|-<br>~~OO~~<br>~~es~~|1.7<br>~~OO~~<br>~~es~~|-<br>~~OO~~<br>~~es~~|| |Reverse leakage current<br>~~OO~~<br>~~or~~|IR<br>~~OO~~<br>~~or~~|VR= VRrated<br>~~OO~~<br>~~es~~<br>~~or~~|-<br>~~OO~~<br>~~es~~<br>~~or~~|-<br>~~OO~~<br>~~es~~<br>~~or~~|50<br>~~OO~~<br>~~es~~<br>~~or~~|μA<br>~~or~~| |||TJ= 125 °C, VR= VRrated<br>~~or~~<br>~~ee~~|-<br>~~or~~<br>~~ee~~|-<br>~~or~~<br>~~ee~~|500<br>~~or~~<br>~~ee~~|| |Junction capacitance<br>~~Ce~~|CT<br>~~Ce~~|VR= 200 V<br>~~Ce~~|-<br>~~Ce~~|17<br>~~Ce~~|-<br>~~Ce~~|pF<br>~~Ce~~| |Series inductance<br>~~Gn~~|LS<br>~~Gn~~|Measured to lead 5 mm from package body<br>~~Gn~~|-<br>~~Gn~~|8<br>~~Gn~~|-<br>~~Gn~~|nH<br>~~Gn~~| Revision: 18-May-2022 Document Number: 96765 **1** For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **VS-E5PH3012LHN3** www.vishay.com ## Vishay Semiconductors |**DYNAMIC RECOVERY CHARACTERISTICS**(TJ= 25 °C unless otherwise specified)|**DYNAMIC RECOVERY CHARACTERISTICS**(TJ= 25 °C unless otherwise specified)|**DYNAMIC RECOVERY CHARACTERISTICS**(TJ= 25 °C unless otherwise specified)|**DYNAMIC RECOVERY CHARACTERISTICS**(TJ= 25 °C unless otherwise specified)|**DYNAMIC RECOVERY CHARACTERISTICS**(TJ= 25 °C unless otherwise specified)|**DYNAMIC RECOVERY CHARACTERISTICS**(TJ= 25 °C unless otherwise specified)|**DYNAMIC RECOVERY CHARACTERISTICS**(TJ= 25 °C unless otherwise specified)|**DYNAMIC RECOVERY CHARACTERISTICS**(TJ= 25 °C unless otherwise specified)| |---|---|---|---|---|---|---|---| |**PARAMETER**|**SYMBOL**|**TEST CONDITIONS**||**MIN.**|**TYP.**|**MAX.**|**UNITS**| |Reverse recovery time|trr|IF= 1.0 A, dIF/dt = 100 A/μs, VR= 30 V||-|32|-|ns| |||TJ= 25 °C|IF= 20 A<br>dIF/dt = 600 A/μs<br>VR= 400 V|-|113|-|| |||TJ= 125 °C||-|175|-|| |Peak recovery current|IRRM|TJ= 25 °C||-|17|-|A| |||TJ= 125 °C||-|26|-|| |Reverse recovery charge|Qrr|TJ= 25 °C||-|850|-|nC| |||TJ= 125 °C||-|2150|-|| |Reverse recovery time|trr|TJ= 25 °C|IF= 30 A<br>dIF/dt = 1000 A/μs<br>VR= 800 V|-|85|-|ns| |||TJ= 125 °C||-|132|-|| |Peak recovery current|IRRM|TJ= 25 °C||-|30|-|A| |||TJ= 125 °C||-|43|-|| |Reverse recovery charge|Qrr|TJ= 25 °C||-|1350|-|nC| |||TJ= 125 °C||-|3215|-|| ## **THERMAL - MECHANICAL SPECIFICATIONS** |**THERMAL - MECHANICAL SPECIFICATIONS**|**THERMAL - MECHANICAL SPECIFICATIONS**|**THERMAL - MECHANICAL SPECIFICATIONS**|**THERMAL - MECHANICAL SPECIFICATIONS**|**THERMAL - MECHANICAL SPECIFICATIONS**|**THERMAL - MECHANICAL SPECIFICATIONS**|**THERMAL - MECHANICAL SPECIFICATIONS**| |---|---|---|---|---|---|---| |**PARAMETER**|**SYMBOL**|**TEST CONDITIONS**|**MIN.**|**TYP.**|**MAX.**|**UNITS**| |Thermal resistance, junction-to-case|RthJC||-|-|0.8|°C/W| |Weight|||-|5.5|-|g| |Mounting torque|||6.0<br>(5.0)|-|12<br>(10)|kgf · cm<br>(lbf · in)| |Maximum junction and storage<br>temperature range|TJ, TStg||-55|-|175|°C| |Markingdevice||Case style: TO-247AD 2L|E5PH3012LH|||| **==> picture [214 x 183] intentionally omitted <==** **----- Start of picture text -----**<br> 100<br>TJ = 175°C<br>10<br>1 T T J J = 125°C = 25 °C<br>TJ = -40 °C<br>0.1<br> 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5<br>VF - Forward Voltage Drop (V)<br>Fig. 1 - Typical Forward Voltage Drop Characteristics<br> - Instantaneous Forward Current (A)<br>IF<br>**----- End of picture text -----**<br> **==> picture [204 x 164] intentionally omitted <==** **----- Start of picture text -----**<br> 1000<br>T J = 175 °C<br>100<br>T J = 125 °C<br>10<br>TJ = 25 °C<br>1<br>0.1<br>0 200 400 600 800 1000 1200<br>VR - Reverse Voltage (V)<br> - Reverse Current (μA)<br>IR<br>**----- End of picture text -----**<br> Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage Revision: 18-May-2022 Document Number: 96765 **2** For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **VS-E5PH3012LHN3** www.vishay.com ## Vishay Semiconductors **==> picture [205 x 165] intentionally omitted <==** **----- Start of picture text -----**<br> 1000<br>100<br>10<br>1<br>0 200 400 600 800 1000 1200<br>VR - Reverse Voltage (V)<br> - Junction Capacitance (pF)<br>T<br>C<br>**----- End of picture text -----**<br> Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage **==> picture [196 x 168] intentionally omitted <==** **----- Start of picture text -----**<br> 180<br>170<br>160<br>150<br>DC<br>140<br>130<br>120<br>110<br>100 Square wave (D = 0.50)<br>rated VR applied<br>90<br>80<br>0 5 10 15 20 25 30 35<br>IF(AV) - Average Forward Current (A)<br>C)<br>°<br>Allowable Solder Pad Temperature (<br>**----- End of picture text -----**<br> Fig. 4 - Maximum Allowable Case Temperature vs. Average Forward Current **==> picture [202 x 165] intentionally omitted <==** **----- Start of picture text -----**<br> 120<br>RMS limit<br>100<br>80<br>60 D = 0.10<br>D = 0.20<br>D = 0.25<br>40 D = 0.33<br>D = 0.50<br>D = 0.75<br>20<br>DC<br>0<br>0 10 20 30 40 50<br>IF(AV) - Average Forward Current (A)<br>Average Power Loss (W)<br>**----- End of picture text -----**<br> Fig. 5 - Forward Power Loss Characteristics, Per Leg **==> picture [411 x 163] intentionally omitted <==** **----- Start of picture text -----**<br> 1<br>0.1<br>0.50<br>0.20<br>0.10<br>0.01<br>0.05<br>DC 0.02<br>0.01<br>0.001<br>0.00001 0.0001 0.001 0.01 0.1 1<br>t1 - Rectangular Pulse Duration (s)<br>C/W)<br>°<br>- Thermal Impedance<br>thJC Junction to Case (<br>Z<br>**----- End of picture text -----**<br> Fig. 6 - Thermal Impedance ZthJC Characteristics Revision: 18-May-2022 Document Number: 96765 **3** For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **VS-E5PH3012LHN3** www.vishay.com ## Vishay Semiconductors **==> picture [467 x 169] intentionally omitted <==** **----- Start of picture text -----**<br> 250 3500<br>3300<br>3100 30 A, 800 V<br>200 20 A, 400 V<br>2900<br>2700<br>150 2500<br>2300 20 A, 400 V<br>30 A, 800 V<br>2100<br>100<br>1900<br>TJ = 125 °C<br>1700 TJ = 125 °C<br>50 1500<br>200 400 600 800 1000 1200 200 400 600 800 1000 1200<br>dIF/dt (A/μs) dIF/dt (A/μs)<br> (ns)trr (nC)Qrr<br>**----- End of picture text -----**<br> Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt Fig. 8 - Typical Stored Charge vs. dIF/dt **==> picture [203 x 164] intentionally omitted <==** **----- Start of picture text -----**<br> 50<br>45 T J = 125 °C<br>40 30 A, 800 V<br>35<br>30<br>20 A, 400 V<br>25<br>20<br>15<br>10<br>200 400 600 800 1000 1200<br>dIF/dt (A/μs)<br> (A)<br>Irr<br>**----- End of picture text -----**<br> Fig. 9 - Typical Recovery Current vs. dIF/dt Revision: 18-May-2022 Document Number: 96765 **4** For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **VS-E5PH3012LHN3** Vishay Semiconductors **==> picture [77 x 10] intentionally omitted <==** **----- Start of picture text -----**<br> www.vishay.com<br>**----- End of picture text -----**<br> **==> picture [294 x 178] intentionally omitted <==** **----- Start of picture text -----**<br> (3)<br>trr<br>ta tb<br>IF<br>t0 t10 %<br>0<br>0.1 IRRM<br>(2)<br>IRRM Qrr [(4)]<br>di(rec)M/dt (5)<br>(1) diF/dt<br>**----- End of picture text -----**<br> Fig. 10 - Reverse Recovery Waveform and Definitions ## **Notes** - (1) diF/dt - rate of change of current through zero crossing - (2) IRRM - peak reverse recovery current > (3) trr - reverse recovery time measured from t0, crossing point of negative going IF, to point t10%, 0.1 IRRM - (4) Qrr - area under curve defined by t0 and t10 % t10 % Qrr = I(t)dt t0 - (5) di(rec)M/dt - peak rate of change of current during tb portion of trr Revision: 18-May-2022 Document Number: 96765 **5** For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **VS-E5PH3012LHN3** Vishay Semiconductors www.vishay.com ## **ORDERING INFORMATION TABLE** **==> picture [374 x 58] intentionally omitted <==** **----- Start of picture text -----**<br> Device code VS- E 5 P H 30 12 L H N3<br>1 2 3 4 5 6 7 8 9 10<br>**----- End of picture text -----**<br> |||1|5<br>3<br>2<br>4<br>6<br>7<br>8<br>10<br>9| |---|---|---|---| ||||| ||**1**|-|Vishay Semiconductors product| ||**2**|-|Circuit configuration:| ||||E = single diode, 2 pins| ||**3**|-|FRED Pt Gen 5| ||**4**|-|P = TO-247 package| ||**5**|-|Process type:| ||||H = hyperfast recovery| ||**6**|-|Current rating (30 = 30 A)| ||**7**|-|Voltage rating (12 = 1200 V)| ||**8**|-|L = long lead| ||**9**|-|H = AEC-Q101 qualified| ||**10**|-|Environmental digit:| ||||N3 = halogen-free, RoHS-compliant, and totally lead (Pb)-free| |**ORDERING INFORMATION**(Example)|**ORDERING INFORMATION**(Example)|**ORDERING INFORMATION**(Example)|**ORDERING INFORMATION**(Example)|**ORDERING INFORMATION**(Example)| |---|---|---|---|---| |**PREFERRED P/N**|**QUANTITY PER TUBE**|**MINIMUM ORDER QUANTITY**||**PACKAGING DESCRIPTION**| |VS-E5PH3012LHN3|25|500||Antistatic plastic tube| |||||| |**LINKS TO RELATED DOCUMENTS**||||| |Dimensions|||www.vishay.com/doc?95536|| |Part markinginformation|||www.vishay.com/doc?95648|| |Spice model|||www.vishay.com/doc?96685|| Revision: 18-May-2022 Document Number: 96765 **6** For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **Outline Dimensions** **==> picture [59 x 48] intentionally omitted <==** www.vishay.com ## Vishay Semiconductors ## **TO-247AD 2L** ## **DIMENSIONS** in millimeters and inches **==> picture [410 x 318] intentionally omitted <==** **----- Start of picture text -----**<br> (3) A A<br>B E (6) F P (Datum B)<br>S A2 Ø K M D B M<br>(2) R/2 A F P1<br>D2<br>Q<br>2 x R<br>D D1 (4)<br>(2)<br>1, 2 3 D 4<br>Thermal pad<br>(5) L1<br>C (4)<br>L See view B A E1<br>0.01 M D B M<br>View A - A<br>C<br>2 x b2<br>2 x b 2 x e A1<br>0.10 M C A M<br>Plating (b1, b3) Base metal<br>D D<br>(c) c1 C C<br>(b, b2)<br>(4)<br>Section C - C, D - D View B<br>**----- End of picture text -----**<br> |**SYMBOL**|**MILLIMETERS**|**MILLIMETERS**|**INCHES**|**INCHES**|**NOTES**<br>3<br>4||**SYMBOL**|**MILLIMETERS**|**MILLIMETERS**|**INCHES**|**INCHES**|**NOTES**| |---|---|---|---|---|---|---|---|---|---|---|---|---| ||**MIN.**|**MAX.**|**MIN.**|**MAX.**||||**MIN.**|**MAX.**|**MIN.**|**MAX.**|| |A|4.65|5.31|0.183|0.209|||E|15.29|15.87|0.602|0.625|3| |A1|2.21|2.59|0.087|0.102|||E1|13.46|-|0.53|-|| |A2|1.50|2.49|0.059|0.098|||e|5.46 BSC||0.215 BSC||| |b|0.99|1.40|0.039|0.055|||Ø K|0.254||0.010||| |b1|0.99|1.35|0.039|0.053|||L|19.81|20.32|0.780|0.800|| |b2|1.65|2.39|0.065|0.094|||L1|3.71|4.29|0.146|0.169|| |b3|1.65|2.34|0.065|0.092|||Ø P|3.56|3.66|0.14|0.144|| |c|0.38|0.89|0.015|0.035|||Ø P1|-|6.98|-|0.275|| |c1|0.38|0.84|0.015|0.033|||Q|5.31|5.69|0.209|0.224|| |D|19.71|20.70|0.776|0.815|||R|4.52|5.49|0.178|0.216|| |D1|13.08|-|0.515|-|||S|5.51 BSC||0.217 BSC||| |D2|0.51|1.35|0.020|0.053||||||||| ## **Notes** > (1) Dimensioning and tolerancing per ASME Y14.5M-1994 > (2) Contour of slot optional > (3) Dimension D and E do not include mold flash. These dimensions are measured at the outermost extremes of the plastic body > (4) Thermal pad contour optional with dimensions D1 and E1 > (5) Lead finish uncontrolled in L1 > (6) Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154") > (7) Outline conforms to JEDEC® outline TO-247 with exception of dimension A min., D, E min., Q min., S, and note 4 Revision: 28-May-2018 Document Number: 95536 **1** For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **Outline Dimensions** Vishay Semiconductors **==> picture [59 x 48] intentionally omitted <==** www.vishay.com ## **TO-247AD 3L** ## **DIMENSIONS** in millimeters and inches ||(2)<br>(2) R/<br><br>2 x R<br>3<br>2 x<br>(5) L1<br>Q|(2)<br>(2) R/<br><br>2 x R<br>3<br>2 x<br>(5) L1<br>Q|(2)<br>(2) R/<br><br>2 x R<br>3<br>2 x<br>(5) L1<br>Q|B||||||D<br>A<br>A2<br>A<br>A<br>A1<br>C<br>T<br> D E<br>E<br>C<br>C<br>View B|D<br>A<br>A2<br>A<br>A<br>A1<br>C<br>T<br> D E<br>E<br>C<br>C<br>View B|A<br>(6)ΦP|A<br>(6)ΦP|A<br>(6)ΦP|(Datum B)<br>Φ P1|(Datum B)<br>Φ P1|(Datum B)<br>Φ P1|(Datum B)<br>Φ P1|(Datum B)<br>Φ P1| |---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---| |||||2||||||||Ø K<br>B<br>D<br>M<br>M<br>hermal pad<br>D2|B<br>D<br><br>M||||||| ||||||||||||||||4||D||| ||||||1<br>2|3|||||||||||||| ||||||<br>b4||||||||||||||| ||||||||||||||||(4)<br>E1||||| |||||x b<br>b2<br>C|||||||||||||||| ||||||||||||||||||||| ||||||(b1, b3, b5)||||||||||||||| ||||0.10<br>M|A<br>C<br>M|||||||||||||||| ||||||||||||||||||||| ||(<br>Plating||||||||||||||||||| |||||c)|(b b2 b4)||||||||||||||| ||||||||||||||||||||| ||||||||||||||||||||| ||||||||||||||||||||| |**SYMBOL**|**MILLIMETERS**|||||**INCHES**|||**NOTES**<br>3<br>4||**SYMBOL**|**MILLIMETERS**||||**INCHES**|||**NOTES**| ||**MIN.**|||**MAX.**||**MIN.**||**MAX.**||||**MIN.**||**MAX.**||**MIN.**||**MAX.**|| |A|4.65|||5.31||0.183||0.209|||D2|0.51||1.30||0.020||0.051|| |A1|2.21|||2.59||0.087||0.102|||E|15.29||15.87||0.602||0.625|3| |A2|1.50|||2.49||0.059||0.098|||E1|13.46||-||0.53||-|| |b|0.99|||1.40||0.039||0.055|||e|5.46 BSC||||0.215 BSC|||| |b1|0.99|||1.35||0.039||0.053|||Ø K|0.254||||0.010|||| |b2|1.65|||2.39||0.065||0.094|||L|19.81||20.32||0.780||0.800|| |b3|1.65|||2.34||0.065||0.092|||L1|3.71||4.29||0.146||0.169|| |b4|2.59|||3.43||0.102||0.135|||Ø P|3.56||3.66||0.14||0.144|| |b5|2.59|||3.38||0.102||0.133|||Ø P1|-||6.98||-||0.275|| |c|0.38|||0.89||0.015||0.035|||Q|5.31||5.69||0.209||0.224|| |c1|0.38|||0.84||0.015||0.033|||R|4.52||5.49||0.178||0.216|| |D|19.71|||20.70||0.776||0.815|||S|5.51 BSC||||0.217 BSC|||| |D1|13.08|||-||0.515||-|||||||||||| ## **Notes** > (1) Dimensioning and tolerancing per ASME Y14.5M-1994 > (2) Contour of slot optional > (3) Dimension D and E do not include mold flash. These dimensions are measured at the outermost extremes of the plastic body > (4) Thermal pad contour optional with dimensions D1 and E1 > (5) Lead finish uncontrolled in L1 > (6) Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154") > (7) Outline conforms to JEDEC® outline TO-247 with exception of dimension A min., D, E min., Q min., S, and note 4 Revision: 06-Mar-2020 Document Number: 95626 **1** For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **Legal Disclaimer Notice** Vishay www.vishay.com ## **Disclaimer** ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer's technical experts. Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein. Hyperlinks included in this datasheet may direct users to third-party websites. These links are provided as a convenience and for informational purposes only. Inclusion of these hyperlinks does not constitute an endorsement or an approval by Vishay of any of the products, services or opinions of the corporation, organization or individual associated with the third-party website. Vishay disclaims any and all liability and bears no responsibility for the accuracy, legality or content of the third-party website or for that of subsequent links. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. _**© 2022 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED**_ Revision: 01-Jan-2022 Document Number: 91000 **1**
Updated at June 4, 2026
Vishay is a global leader in the manufacturing of discrete semiconductors and passive electronic components. Renowned for its exceptional quality and engineering expertise, the company produces highly reliable solutions that drive innovation across the industrial, automotive, telecommunications, and consumer electronics markets. From advanced factory automation to vehicle electrification, Vishay components provide the foundational building blocks for modern electronic design. The company's expansive portfolio is heavily focused on efficient power management, signal routing, and energy storage. Within its passive component lineup, Vishay is recognized for its extensive array of high-performance capacitors, including robust aluminium electrolytic, film, and polymer variants, alongside highly efficient power inductors. In the realm of discrete semiconductors, Vishay is a premier manufacturer of single and dual MOSFETs, as well as a vast selection of Schottky, Zener, and fast-recovery rectifier diodes designed for demanding power applications. Furthermore, Vishay delivers industry-leading circuit protection and thermal management solutions. With a broad offering of transient voltage suppressors (TVS diodes) and temperature-sensing NTC thermistors, these components are engineered to safeguard sensitive circuitry against both electrical and thermal overstress. By combining this vital mix of advanced discretes and passives, Vishay enables engineers to develop robust, space-saving, and highly resilient electronic systems.
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