VS-81RIA120PBF

Thyristor Module, 80 A, 1200 V

⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.

Manufacturer: VISHAY
Product type: Thyristors - SCR Modules
SCR Module Type: Single SCR
Thyristor Mounting: Stud Mount
Holding Current Max: 200mA
On State RMS Current: 125A
Thyristor Case Style: TO-209AC
Average Forward Current: 80A
Average On State Current: 80A
Gate Trigger Current Max: 120mA
Gate Trigger Voltage Max: 2.5V
Operating Temperature Max: 125°C
Repetitive Peak Reverse Voltage: 1.2kV
Peak Repetitive Off State Voltage: 1.2kV

Delivery and price
Units per pack	100
Price	24.18 €
Current stock	10+
Lead time	30 days

Datasheet

## **VS-80RIA...PbF, VS-81RIA...PbF, VS-82RIA...PbF Series** 

www.vishay.com 

## Vishay Semiconductors 

## **Phase Control Thyristors (Stud Version), 80 A** 

## **FEATURES** 

- Hermetic glass-metal seal 

- International standard case TO-209AC (TO-94) 

- Designed and qualified for industrial level 

- Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 

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**----- Start of picture text -----**<br>
TO-209AC (TO-94)<br>**----- End of picture text -----**<br>


## **TYPICAL APPLICATIONS** 

- DC motor controls 

## **PRODUCT SUMMARY** 

|**PRODUCT SUMMARY**|**PRODUCT SUMMARY**|
|---|---|
|IT(AV)|80 A|
|VDRM/VRRM|400 V, 800 V, 1200 V|
|VTM|1.60 V|
|IGT|120 mA|
|TJ|-40 °C to 125 °C|
|Package|TO-209AC (TO-94)|
|Diode variation|Single SCR|



- Controlled DC power supplies 

- AC controllers 

## **MAJOR RATINGS AND CHARACTERISTICS** 

|**MAJOR RATINGS AND CHARACTERISTICS**|**MAJOR RATINGS AND CHARACTERISTICS**|**MAJOR RATINGS AND CHARACTERISTICS**|**MAJOR RATINGS AND CHARACTERISTICS**|
|---|---|---|---|
|**PARAMETER**|**TEST CONDITIONS**|**VALUES**|**UNITS**|
|IT(AV)||80|A|
||TC|85|°C|
|IT(RMS)||125|A|
|ITSM|50 Hz|1900||
||60 Hz|1990||
|I2t|50 Hz|18|kA2s|
||60 Hz|16||
|VDRM/VRRM||400 to 1200|V|
|tq|Typical|110|μs|
|TJ||-40 to 125|°C|



## **ELECTRICAL SPECIFICATIONS** 

## **VOLTAGE RATINGS** 

|**VOLTAGE RATINGS**|**VOLTAGE RATINGS**|**VOLTAGE RATINGS**|**VOLTAGE RATINGS**|**VOLTAGE RATINGS**|
|---|---|---|---|---|
|**TYPE NUMBER**|**VOLTAGE**<br>**CODE**|**VDRM/VRRM, MAXIMUM REPETITIVE**<br>**PEAK AND OFF-STATE VOLTAGE**<br>**V**|**VRSM, MAXIMUM NON-REPETITIVE**<br>**PEAK VOLTAGE**<br>**V**|**IDRM/IRRM MAXIMUM**<br>**AT TJ = 125 °C**<br>**mA**|
|VS-80RIA<br>VS-81RIA|40|400|500|15|
||80|800|900||
||120|1200|1300||



Revision: 11-Mar-14 

Document Number: 94392 

**1** 

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**VS-80RIA...PbF, VS-81RIA...PbF, VS-82RIA...PbF Series** 

Vishay Semiconductors 

**==> picture [59 x 48] intentionally omitted <==**

www.vishay.com 

|**ABSOLUTE MAXIMUM RATINGS**|**ABSOLUTE MAXIMUM RATINGS**||||||
|---|---|---|---|---|---|---|
|**PARAMETER**|**SYMBOL**|**TEST CONDITIONS**|||**VALUES**|**UNITS**|
|Maximum average on-state current<br>at case temperature|IT(AV)|180° conduction, half sine wave|||80|A|
||||||85|°C|
|Maximum RMS on-state current|IT(RMS)|DC at 75 °C case temperature|||125|A|
|Maximum peak, one-cycle<br>non-repetitive surge current|ITSM|t = 10 ms|No voltage<br>reapplied|Sinusoidal half wave,<br>initial TJ= TJmaximum|1900||
|||t = 8.3 ms|||1990||
|||t = 10 ms|100 % VRRM<br>reapplied||1600||
|||t = 8.3 ms|||1675||
|Maximum I2t for fusing|I2t|t = 10 ms|No voltage||18|kA2s|
|||t = 8.3 ms|||16||
|||t = 10 ms|100 % VRRM<br>reapplied||12.7||
|||t = 8.3 ms|||11.7||
|Maximum I2t for fusing|I2t|t = 0.1 ms to 10 ms, no voltage reapplied|||180.5|kA2s|
|Low level value of threshold voltage|VT(TO)1|(16.7 % xx IT(AV)< I <x IT(AV)), TJ= TJmaximum|||0.99|V|
|High level value of threshold voltage|VT(TO)2|(I >x IT(AV)), TJ= TJmaximum|||1.13||
|Low level value of on-state slope resistance|rt1|(16.7 % xx IT(AV)< I <x IT(AV)), TJ= TJmaximum|||2.29|m|
|High level value of on-state slope resistance|rt2|(I >x IT(AV)), TJ= TJmaximum|||1.84||
|Maximum on-state voltage|VTM|Ipk= 250 A, TJ= 25 °C, tp= 10 ms sine pulse|||1.60|V|
|Maximum holding current|IH|TJ= 25 °C, anode supply 12 V resistive load|||200|mA|
|Typical latching current|IL||||400||



|**SWITCHING**|**SWITCHING**|**SWITCHING**|**SWITCHING**|**SWITCHING**|
|---|---|---|---|---|
|**PARAMETER**|**SYMBOL**|**TEST CONDITIONS**|**VALUES**|**UNITS**|
|Maximum non-repetitive rate of<br>rise of turned-on current|dI/dt|TJ= 125 °C, Vd= Rated VDRM, ITM= 2 x dI/dt snubber<br>0.2 μF, 15, gate pulse: 20 V, 65, tp= 6 μs, tr= 0.5 μs<br>Per JEDEC standard RS-397, 5.2.2.6.|300|A/μs|
|Typical delay time|td|Gate pulse: 10 V, 15source, tp= 6 μs, tr= 0.1 μs,<br>Vd= Rated VDRM, ITM= 50 Adc, TJ= 25 °C|1|μs|
|Typical turn-off time|tq|ITM= 50 A, TJ= TJmaximum, dI/dt = - 5 A/μs, VR= 50 V,<br>dV/dt = 20 V/μs,gate bias: 0 V 25, tp= 500 μs|110||



|**BLOCKING**|**BLOCKING**|**BLOCKING**|**BLOCKING**|**BLOCKING**|
|---|---|---|---|---|
|**PARAMETER**|**SYMBOL**|**TEST CONDITIONS**|**VALUES**|**UNITS**|
|Maximum critical rate of rise of<br>off-state voltage|dV/dt|TJ= 125 °C exponential to 67 % rated VDRM|500|V/μs|
|Maximum peak reverse and<br>off-state leakage current|IRRM,<br>IDRM|TJ= 125 °C rated VDRM/VRRMapplied|15|mA|



Revision: 11-Mar-14 

Document Number: 94392 

**2** 

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**VS-80RIA...PbF, VS-81RIA...PbF, VS-82RIA...PbF Series** 

**==> picture [59 x 48] intentionally omitted <==**

www.vishay.com 

## Vishay Semiconductors 

|**TRIGGERING**|**TRIGGERING**|||||
|---|---|---|---|---|---|
|**PARAMETER**|**SYMBOL**|**TEST CONDITIONS**||**VALUES**|**UNITS**|
|Maximum peak gate power|PGM|TJ= TJmaximum, tp 5 ms||12|W|
|Maximum average gate power|PG(AV)|TJ= TJmaximum, f = 50 Hz, d% = 50||3||
|Maximum peak positive gate current|IGM|TJ= TJmaximum, tp 5 ms||3|A|
|Maximum peak positive gate voltage|+ VGM|||20|V|
|Maximum peak negative gate voltage|- VGM|||10||
|Maximum DC gate current required to trigger|IGT|TJ= - 40 °C|Maximum required gate trigger/<br>current/voltage are the lowest value<br>which will trigger all units 6 V anode<br>to cathode applied|270|mA|
|||TJ= 25 °C||120||
|||TJ= 125 °C||60||
|Maximum DC gate voltage required to trigger|VGT|TJ= - 40 °C||3.5|V|
|||TJ= 25 °C||2.5||
|||TJ= 125 °C||1.5||
|DC gate current not to trigger|IGD|TJ= TJmaximum|Maximum gate current/voltage not to<br>trigger is the maximum value which<br>will not trigger any unit with rated<br>VDRManode to cathode applied|6|mA|
|DC gate voltage not to trigger|VGD|||0.25|V|



|**THERMAL AND MECHANICAL SPECIFICATIONS**|**THERMAL AND MECHANICAL SPECIFICATIONS**|**THERMAL AND MECHANICAL SPECIFICATIONS**|**THERMAL AND MECHANICAL SPECIFICATIONS**|**THERMAL AND MECHANICAL SPECIFICATIONS**|
|---|---|---|---|---|
|**PARAMETER**|**SYMBOL**|**TEST CONDITIONS**|**VALUES**|**UNITS**|
|Maximum operating junction<br>temperature range|TJ||- 40 to 125|°C|
|Maximum storage temperature range|TStg||- 40 to 150||
|Maximum thermal resistance,<br>junction to case|RthJC|DC operation|0.30|K/W|
|Maximum thermal resistance,<br>case to heatsink|RthCS|Mounting surface, smooth, flat and greased|0.1||
|Mounting torque, ± 10 %||Non-lubricated threads|15.5<br>(137)|N · m<br>(lbf · in)|
|||Lubricated threads|14<br>(120)||
|Approximate weight|||130|g|
|Case style||See dimensions - link at the end of datasheet|TO-209AC (TO-94)||



##  **RthJC CONDUCTION** 

|**RthJC CONDUCTION**|**RthJC CONDUCTION**|**RthJC CONDUCTION**|**RthJC CONDUCTION**|**RthJC CONDUCTION**|
|---|---|---|---|---|
|**CONDUCTION ANGLE**|**SINUSOIDAL CONDUCTION**|**RECTANGULAR CONDUCTION**|**TEST CONDITIONS**|**UNITS**|
|180°|0.042|0.030|TJ= TJmaximum|K/W|
|120°|0.050|0.052|||
|90°|0.064|0.070|||
|60°|0.095|0.100|||
|30°|0.164|0.165|||



## **Note** 

- The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC 

Revision: 11-Mar-14 

Document Number: 94392 

**3** 

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**VS-80RIA...PbF, VS-81RIA...PbF, VS-82RIA...PbF Series** 

**==> picture [59 x 48] intentionally omitted <==**

www.vishay.com 

## Vishay Semiconductors 

**==> picture [165 x 162] intentionally omitted <==**

**----- Start of picture text -----**<br>
130<br>80RIA Series<br>R       (DC) = 0.30 K/WthJC<br>120<br>110<br>Conduction Angle<br>100 30°<br>60°<br>90°<br>120°<br>90<br>180°<br>80<br>0 10 20 30 40 50 60 70 80 90<br>Average On-state Current (A)<br>Maximum Allowable Case Temperature (°C)<br>**----- End of picture text -----**<br>


Fig. 1 - Current Ratings Characteristics 

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130<br>80RIA Series<br>R       (DC) = 0.30 K/WthJC<br>120<br>110<br>Conduction Period<br>100<br>90<br>30 °<br>60°<br>80 90°<br>120 °<br>180° DC<br>70<br>0 20 40 60 80 100 120 140<br>Average On-state Current (A)<br>Maximum Allowable Case Temperature (°C)<br>**----- End of picture text -----**<br>


Fig. 2 - Current Ratings Characteristics 

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**----- Start of picture text -----**<br>
120<br>110 180 °<br>120°<br>100<br>90°<br>90 60°<br>80 30 °<br>70<br>RMS Limit<br>60<br>50<br>40 Conduction Angle<br>30<br>80RIA Series<br>20<br>T   = 125°CJ<br>10<br>0<br>0 10 20 30 40 50 60 70 800 25 50 75 100 125<br>Average On-state Current (A) Maximum Allowable Ambient Temperature (°C)<br> Fig. 3 - On-State Power Loss Characteristics<br>180<br>DC<br>160 180°<br>120°<br>140<br>90°<br>120 60°<br>30°<br>100<br>80<br>RMS Limit<br>60 Conduction Period<br>40<br>80RIA Series<br>20 T   = 125°C J<br>0<br>0 20 40 60 80 100 120 1400 25 50 75 100 125<br>Average On-state Current (A) Maximum Allowable Ambient Temperature (°C)<br> Fig. 4 - On-State Power Loss Characteristics<br>5 K/ W<br>5 K/W<br>3 K/ W<br>3 K/W<br>2 K/ W<br>1.4 K/W<br>2 K/W<br>1.4 K/ W<br>1 K/W<br>1 K/W<br>0.6 K/W<br>R<br>= 0.4 K/ W - Delta<br>R<br>thSA<br>0.6 K/W<br>thSA<br>R<br>= 0.4 K/W - Delta<br>R<br>Maximum Average On-state Power Loss (W)<br>Maximum Average On-state Power Loss (W)<br>**----- End of picture text -----**<br>


Revision: 11-Mar-14 

Document Number: 94392 

**4** 

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**VS-80RIA...PbF, VS-81RIA...PbF, VS-82RIA...PbF Series** 

**==> picture [59 x 48] intentionally omitted <==**

www.vishay.com 

## Vishay Semiconductors 

**==> picture [179 x 158] intentionally omitted <==**

**----- Start of picture text -----**<br>
1800<br>At Any Rated Load Condition And With<br>Rated V        Applied Following Surge.RRM<br>Initial TJ  = 125°C<br>1600<br>at 60 Hz 0.0083 s<br>  at 50 Hz 0.0100 s<br>1400<br>1200<br>1000<br>80RIA Series<br>800<br>1 10 100<br>Number Of Equal Amplitude Half Cycle Current Pulses (N)<br>Peak Half Sine Wave On-state Current (A)<br>**----- End of picture text -----**<br>


Fig. 5 - Maximum Non-Repetitive Surge Current 

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**----- Start of picture text -----**<br>
2000<br>Maximum Non Repetitive Surge Current<br>1900 Versus Pulse Train Duration. Control<br>1800 Of Conduction May Not Be Maintained.<br>1700 Initial T  = 125J ° C<br>1600 No Voltage Reapplied<br>1500 Rated V        Reapplied RRM<br>1400<br>1300<br>1200<br>1100<br>1000<br>900 80RIA Series<br>800<br>700<br>0.01 0.1 1<br>Pulse Train Duration (s)<br>Peak Half Sine Wave On-state Current (A)<br>**----- End of picture text -----**<br>


Fig. 6 - Maximum Non-Repetitive Surge Current 

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**----- Start of picture text -----**<br>
10000<br>1000<br>100<br>T  J = 25°C<br>T  = 125°C J<br>10<br>80RIA Series<br>1<br>0.5 1 1.5 2 2.5 3 3.5 4 4.5 5<br>Instantaneous On-state Voltage (V)<br>Instantaneous On-state Current (A)<br>**----- End of picture text -----**<br>


Fig. 7 - On-State Voltage Drop Characteristics 

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**----- Start of picture text -----**<br>
1<br>Steady State Value<br>R         = 0.30 K/W thJC<br>(DC Operation)<br>0.1<br>0.01<br>80RIA Series<br>0.001<br>0.0001 0.001 0.01 0.1 1 10<br>Square Wave Pulse Duration (s)<br> Fig. 8 - Thermal Impedance ZthJC Characteristics<br>thJC<br>Transient Thermal Impedance Z          (K/W)<br>**----- End of picture text -----**<br>


Revision: 11-Mar-14 

Document Number: 94392 

**5** 

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**==> picture [59 x 48] intentionally omitted <==**

## **VS-80RIA...PbF, VS-81RIA...PbF, VS-82RIA...PbF Series** 

> www.vishay.com Vishay Semiconductors 

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**----- Start of picture text -----**<br>
100<br>Rectangular gate pulse (1) PGM = 100W,  tp = 500µs<br>a) Recommended load line for (2) PGM = 50W,  tp = 1ms<br>     rated di/dt : 20V, 30ohms; tr<=0.5 µs (3) PGM = 20W,  tp = 2.5ms<br>b) Recommended load line for (4) PGM = 10W,  tp = 5ms<br>    <=30% rated di/dt : 20V, 65ohms<br>10     tr<=1 µs<br>1<br>(a) (1) (2) (3) (4)<br>VGD (b)<br>IGD Device: 80RIA Series Frequency Limited by PG(AV)<br>0.1<br>0.001 0.01 0.1 1 10 100 1000<br>Instantaneous Gate Current (A)<br>jT<br>Tj<br>= Tj=-40 °C<br>=25 °C<br>125 C°<br>Instantaneous Gate Voltage (V)<br>**----- End of picture text -----**<br>


Fig. 9 - Gate Characteristics 

## **ORDERING INFORMATION TABLE** 

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**----- Start of picture text -----**<br>
Device code VS- 8 0 RIA 120 M PbF<br>1 2 3 4 5 6 7<br>1 - Vishay Semiconductors product<br>2 - ITAV x 10 A<br>3 - 0 = Eyelet terminals (gate and auxiliary cathode leads)<br>1 = Fast-on terminals (gate and auxiliary cathode leads)<br>2 = Flag terminals (gate and auxiliary cathode terminals)<br>4 - RIA = Essential part number<br>5 - Voltage code x 100 = VRRM (see Voltage Ratings table)<br>6 - None = Stud base 1/2"-20UNF- 2 A threads<br>M = Stud base metric threads M12 x 1.75 E 6<br>7 - None = Standard production<br>-       PbF = Lead (Pb)-free<br>LINKS TO RELATED DOCUMENTS<br>Dimensions www.vishay.com/doc?95362<br>**----- End of picture text -----**<br>


Revision: 11-Mar-14 

Document Number: 94392 

**6** 

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**Outline Dimensions** Vishay Semiconductors 

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## **TO-209AC (TO-94) for 80RIA Series** 

## **DIMENSIONS** in millimeters (inches) 

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**----- Start of picture text -----**<br>
Glass metal seal<br>16.5 (0.65) MAX. 2.5 (0.10) MAX.<br>Ø 8.5 (0.33)<br>Ø 4.3 (0.17)<br>Flexible lead 20 (0.79) MIN.<br>C.S. 16 mm [2]<br>(0.025 s.i.)<br>C.S. 0.4 mm [2]<br>Red silicon rubber<br>(0.0006 s.i.)<br>Red cathode<br>157 (6.18)<br>215 ± 10<br>170 (6.69) White gate (8.46 ± 0.39)<br>Fast-on terminals<br>55 (2.17) Red shrink<br>MIN. White shrink AMP. 280000-1<br>REF-250<br>24 (0.94) Ø 23.5 (0.92) MAX.<br>MAX.<br>10.0 (0.39) MAX.<br>21 (0.83)<br>MAX.<br>SW 27<br>1/2"-20UNF-2A<br>29.5 (1.16) MAX.<br>9.5 (0.37) MIN.<br>**----- End of picture text -----**<br>


For technical questions, contact: indmodules@vishay.com 

www.vishay.com 1 

Document Number: 95362 Revision: 17-Sep-10 

**Legal Disclaimer Notice** Vishay 

www.vishay.com 

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## **Disclaimer** 

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 

Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product.  To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. 

Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications.  Such statements are not binding statements about the suitability of products for a particular application.  It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time.  All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts.  Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. 

Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. 

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay.  Product names and markings noted herein may be trademarks of their respective owners. 

Revision: 13-Jun-16 

Document Number: 91000 

**1**

Updated at February 9, 2023

Vishay is a global leader in the manufacturing of discrete semiconductors and passive electronic components. Renowned for its exceptional quality and engineering expertise, the company produces highly reliable solutions that drive innovation across the industrial, automotive, telecommunications, and consumer electronics markets. From advanced factory automation to vehicle electrification, Vishay components provide the foundational building blocks for modern electronic design. The company's expansive portfolio is heavily focused on efficient power management, signal routing, and energy storage. Within its passive component lineup, Vishay is recognized for its extensive array of high-performance capacitors, including robust aluminium electrolytic, film, and polymer variants, alongside highly efficient power inductors. In the realm of discrete semiconductors, Vishay is a premier manufacturer of single and dual MOSFETs, as well as a vast selection of Schottky, Zener, and fast-recovery rectifier diodes designed for demanding power applications. Furthermore, Vishay delivers industry-leading circuit protection and thermal management solutions. With a broad offering of transient voltage suppressors (TVS diodes) and temperature-sensing NTC thermistors, these components are engineered to safeguard sensitive circuitry against both electrical and thermal overstress. By combining this vital mix of advanced discretes and passives, Vishay enables engineers to develop robust, space-saving, and highly resilient electronic systems.

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