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VS-3EYH02HM3/H
Fast / Ultrafast Diode, 200 V, 3 A, Single, 950 mV, 30 ns, 70 A
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: VISHAY
- Product type: Fast & Ultrafast Recovery Rectifier Diodes
- SVHC: Lead (04-Feb-2026)
- No. of Pins: 2 Pin
- Product Range: FRED Pt Series
- Qualification: AEC-Q101
- Diode Case Style: DO-221AD
- Diode Configuration: Single
- Forward Voltage Max: 950mV
- Forward Surge Current: 70A
- Reverse Recovery Time: 30ns
- Average Forward Current: 3A
- Operating Temperature Max: 175°C
- Repetitive Peak Reverse Voltage: 200V
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 0.169 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
~~—~~ www.vishay.com ## **VS-3EYH01HM3, VS-3EYH02HM3** ## Vishay Semiconductors ## **Hyperfast Rectifier, 3 A FRED Pt[®]** **eSMP[® ] Series** ## **FEATURES** - Low profile package - Ideal for automated placement - Low forward voltage drop, low power losses - Low leakage current - Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C **==> picture [122 x 8] intentionally omitted <==** **----- Start of picture text -----**<br> Top View Bottom View<br>**----- End of picture text -----**<br> ## **SlimSMAW (DO-221AD)** Cathode Anode - AEC-Q101 qualified, class 2 whisker test - Compatible to SOD-128 package case outline - Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 ~~SSS,~~ OOS ## **DESCRIPTION / APPLICATIONS** ## **LINKS TO ADDITIONAL RESOURCES** ~~<>~~ 3D Models For use in high frequency, freewheeling, DC/DC converters, PFC, and in snubber industrial, and automotive applications. ## **MECHANICAL DATA** ## **PRIMARY CHARACTERISTICS** |**PRIMARY CHARACTERISTICS**|**PRIMARY CHARACTERISTICS**| |---|---| |IF(AV)|3 A| |VR|100 V, 200 V| |VFat IF|0.71 V| |IFSM|70 A| |trr(typ.)|16 ns| |TJmax.|175 °C| |Package|SlimSMAW (DO-221AD)| |Circuit configuration|Single| **Case:** SlimSMAW (DO-221AD) Molding compound meets UL 94 V-0 flammability rating Halogen-free, RoHS-compliant **Terminals:** matte tin plated leads, solderable per J-STD-002 **Polarity:** color band denotes cathode end ## **ABSOLUTE MAXIMUM RATINGS** |**ABSOLUTE MAXIMUM RATINGS**|**ABSOLUTE MAXIMUM RATINGS**|**ABSOLUTE MAXIMUM RATINGS**|**ABSOLUTE MAXIMUM RATINGS**|**ABSOLUTE MAXIMUM RATINGS**| |---|---|---|---|---| |**PARAMETER**|**SYMBOL**|**TEST CONDITIONS**|**VALUES**|**UNITS**| |Peak repetitive reverse voltageVS-3EYH01HM3<br>VS-3EYH02HM3|VRRM||100|V| ||||200|| |Average rectified forward current|IF(AV) (1)|TC= 137 °C|3|A| |Non-repetitive peak surge current|IFSM|TJ= 25 °C, 10 ms sine pulse wave|70|| |Operatingjunction and storage temperatures|TJ, TStg||-55 to +175|°C| ## **Note** > (1) Mounted on infinite heatsink ## **ELECTRICAL SPECIFICATIONS** (TJ = 25 °C unless otherwise specified) |**ELECTRICAL SPECIFICATIONS**(TJ = 25 °C unless otherwise specified)TJ = 25 °C unless otherwise specified)J = 25 °C unless otherwise specified)= 25 °C unless otherwise specified)pecified)ecified))|**ELECTRICAL SPECIFICATIONS**(TJ = 25 °C unless otherwise specified)TJ = 25 °C unless otherwise specified)J = 25 °C unless otherwise specified)= 25 °C unless otherwise specified)pecified)ecified))|**ELECTRICAL SPECIFICATIONS**(TJ = 25 °C unless otherwise specified)TJ = 25 °C unless otherwise specified)J = 25 °C unless otherwise specified)= 25 °C unless otherwise specified)pecified)ecified))|**ELECTRICAL SPECIFICATIONS**(TJ = 25 °C unless otherwise specified)TJ = 25 °C unless otherwise specified)J = 25 °C unless otherwise specified)= 25 °C unless otherwise specified)pecified)ecified))|**ELECTRICAL SPECIFICATIONS**(TJ = 25 °C unless otherwise specified)TJ = 25 °C unless otherwise specified)J = 25 °C unless otherwise specified)= 25 °C unless otherwise specified)pecified)ecified))|**ELECTRICAL SPECIFICATIONS**(TJ = 25 °C unless otherwise specified)TJ = 25 °C unless otherwise specified)J = 25 °C unless otherwise specified)= 25 °C unless otherwise specified)pecified)ecified))|**ELECTRICAL SPECIFICATIONS**(TJ = 25 °C unless otherwise specified)TJ = 25 °C unless otherwise specified)J = 25 °C unless otherwise specified)= 25 °C unless otherwise specified)pecified)ecified))| |---|---|---|---|---|---|---| |**PARAMETER**|**SYMBOL**|**TEST CONDITIONS**|**MIN.**|**TYP.**|**MAX.**|**UNITS**| |Breakdown voltage, blocking<br>voltage<br>VS-3EYH01HM3<br>VS-3EYH02HM3<br>~~es~~<br>~~|~~<br>~~a~~|VBR, VR<br>~~es~~<br>~~|~~<br>~~———~~|IR= 100 μA<br>~~es~~<br>~~———~~|100<br>~~es~~<br>~~ee~~|-<br>~~es~~<br>~~ee~~<br>~~ee~~|-<br>~~es~~<br>~~ee~~|V| ||~~es~~<br>~~|~~<br>~~———~~||200<br>~~es~~<br>~~ee~~|-<br>~~es~~<br>~~ee~~<br>~~ee~~|-<br>~~es~~<br>~~ee~~|| |Forward voltage, per diode<br>~~|~~<br>~~a~~|VF<br>~~|~~<br>~~———~~|IF= 3 A<br>~~———~~|-<br>~~ee~~<br>~~es~~|0.86<br>~~ee~~<br>~~ee~~|0.95<br>~~ee~~|| |||IF= 3 A, TJ= 150 °C<br>~~———~~<br>~~ee~~|-<br>~~ee~~<br>~~es~~|0.71<br>~~ee~~<br>~~ee~~|0.79<br>~~ee~~|| |Reverse leakage current, per diode<br>~~ae~~|IR<br>~~———~~<br>~~ae~~|VR= VRrated<br>~~———~~<br>~~ae~~|-<br>~~es~~<br>~~ae~~|-<br>~~ae~~|2<br>~~ae~~|μA<br>~~ae~~| |||TJ= 150 °C, VR= VRrated<br>~~———~~<br>~~ae~~<br>~~ee~~|-<br>~~ae~~<br>~~ee~~|-<br>~~ae~~<br>~~ee~~|20<br>~~ae~~<br>~~ee~~|| |Junction capacitance<br>~~De~~|CT<br>~~De~~|VR= 200 V<br>~~OO~~|-<br>~~OO~~|16<br>~~OO~~|-<br>~~OO~~|pF| Document Number: 96384 Revision: 28-Jan-2021 **1** For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 ## **VS-3EYH01HM3, VS-3EYH02HM3** www.vishay.com ## Vishay Semiconductors ## **DYNAMIC RECOVERY CHARACTERISTICS** (TJ = 25 °C unless otherwise specified) |**DYNAMIC RECOVERY CHARACTERISTICS**(TJ= 25 °C unless otherwise specified)|**DYNAMIC RECOVERY CHARACTERISTICS**(TJ= 25 °C unless otherwise specified)|**DYNAMIC RECOVERY CHARACTERISTICS**(TJ= 25 °C unless otherwise specified)|**DYNAMIC RECOVERY CHARACTERISTICS**(TJ= 25 °C unless otherwise specified)|**DYNAMIC RECOVERY CHARACTERISTICS**(TJ= 25 °C unless otherwise specified)|**DYNAMIC RECOVERY CHARACTERISTICS**(TJ= 25 °C unless otherwise specified)|**DYNAMIC RECOVERY CHARACTERISTICS**(TJ= 25 °C unless otherwise specified)|**DYNAMIC RECOVERY CHARACTERISTICS**(TJ= 25 °C unless otherwise specified)| |---|---|---|---|---|---|---|---| |**PARAMETER**|**SYMBOL**|**TEST CONDITIONS**||**MIN.**|**TYP.**|**MAX.**|**UNITS**| |Reverse recovery time|trr|IF= 1.0 A, dIF/dt = 50 A/μs, VR= 30 V||-|22|-|ns| |||IF= 1.0 A, dIF/dt = 100 A/μs, VR= 30 V||-|16|-|| |||IF= 0.5 A, IR= 1A, Irr= 0.25 A||-|-|30|| |||TJ= 25 °C|IF= 3 A,<br>dIF/dt = 200 A/μs,<br>VR= 100 V|-|18|-|| |||TJ= 125 °C||-|30|-|| |Peak recovery current|IRRM|TJ= 25 °C||-|2.5|-|A| |||TJ= 125 °C||-|4|-|| |Reverse recovery charge|Qrr|TJ= 25 °C||-|23|-|nC| |||TJ= 125 °C||-|60|-|| ## **THERMAL - MECHANICAL SPECIFICATIONS** |**THERMAL - MECHANICAL SPECIFICATIONS**|**THERMAL - MECHANICAL SPECIFICATIONS**|**THERMAL - MECHANICAL SPECIFICATIONS**|**THERMAL - MECHANICAL SPECIFICATIONS**|**THERMAL - MECHANICAL SPECIFICATIONS**|**THERMAL - MECHANICAL SPECIFICATIONS**|**THERMAL - MECHANICAL SPECIFICATIONS**|**THERMAL - MECHANICAL SPECIFICATIONS**| |---|---|---|---|---|---|---|---| |**PARAMETER**||**SYMBOL**|**TEST CONDITIONS**|**MIN.**|**TYP.**|**MAX.**|**UNITS**| |Maximum junction and storage temperature range||TJ, TStg||-55|-|175|°C| |Thermal resistance, junction to mount||RthJM (1)|Infinite heatsink|-|12|15|°C/W| |Thermal resistance, junction to ambient||RthJA|Device mounted on FR4 PCB,<br>2 oz. standard footprint|-|120|150|| |Marking device|VS-3EYH01HM3||Case style SlimSMAW (DO-221AD)|3H1|||| ||VS-3EYH02HM3|||3H2|||| ## **Note** > (1) Thermal resistance junction to mount follows JEDEC® 51-14 transient dual interface test method (TDIM) Revision: 28-Jan-2021 Document Number: 96384 **2** For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **VS-3EYH01HM3, VS-3EYH02HM3** www.vishay.com ## Vishay Semiconductors **==> picture [470 x 165] intentionally omitted <==** **----- Start of picture text -----**<br> 100 100<br>175 ° C<br>10<br>150 °C<br>10 1<br>T J = 175 °C 125 °C<br>0.1<br>25 °C<br>1 TJ = 150 °C 0.01<br>TJ = 125 °C<br>TJ = 25 °C 0.001<br>TJ = -40 °C<br>0.1 0.0001<br>0.4 0.6 0.8 1.0 1.2 1.4 50 100 150 200<br>VF - Forward Voltage Drop (V) VR - Reverse Voltage (V)<br> - Reverse Current (μA)<br>IR<br> - Instantaneous Forward Current (A)<br>IF<br>**----- End of picture text -----**<br> Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage **==> picture [203 x 165] intentionally omitted <==** **----- Start of picture text -----**<br> 100<br>10<br>1<br>0 25 50 75 100 125 150 175 200<br>VR - Reverse Voltage (V)<br> - Junction Capacitance (pF)<br>T<br>C<br>**----- End of picture text -----**<br> Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage **==> picture [410 x 162] intentionally omitted <==** **----- Start of picture text -----**<br> 1000<br>Junction to Ambient<br>100<br>Junction to Mount<br>10<br>1<br>0.1<br>0.001 0.01 0.1 1 10 100<br>t1 - Rectangular Pulse Duration (s)<br>C/W)<br>°<br>- Thermal Impedance (<br>thJC<br>Z<br>**----- End of picture text -----**<br> Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics Revision: 28-Jan-2021 Document Number: 96384 **3** For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **VS-3EYH01HM3, VS-3EYH02HM3** **==> picture [77 x 10] intentionally omitted <==** **----- Start of picture text -----**<br> www.vishay.com<br>**----- End of picture text -----**<br> **==> picture [202 x 166] intentionally omitted <==** **----- Start of picture text -----**<br> 180<br>170<br>160<br>DC<br>150<br>140 Square wave (D = 0.50)<br>rated VR applied<br>130<br>See note [(1)]<br>120<br>0 0.5 1 1.5 2 2.5 3 3.5<br>IF(AV) - Average Forward Current (A)<br>C)<br>°<br>Allowable Case Temperature (<br>**----- End of picture text -----**<br> Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current **==> picture [202 x 165] intentionally omitted <==** **----- Start of picture text -----**<br> 3.5<br>RMS limit<br>3<br>2.5<br>2<br>D = 0.02<br>1.5<br>D = 0.05<br>D = 0.1<br>1 D = 0.2<br>D = 0.5<br>0.5 DC<br>0<br>0 0.5 1 1.5 2 2.5 3 3.5 4 4.5<br>IF(AV) - Average Forward Current (A)<br>Average Power Loss (W)<br>**----- End of picture text -----**<br> **==> picture [158 x 9] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 6 - Forward Power Loss Characteristics<br>**----- End of picture text -----**<br> ## Vishay Semiconductors **==> picture [201 x 165] intentionally omitted <==** **----- Start of picture text -----**<br> 40<br>35<br>30<br>125 °C<br>25<br>20 25 ° C<br>15<br>10<br>100 200 300 400 500<br>dIF/dt (A/μs)<br> (ns)<br>trr<br>**----- End of picture text -----**<br> Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt **==> picture [201 x 165] intentionally omitted <==** **----- Start of picture text -----**<br> 80<br>70 125 ° C<br>60<br>50<br>40<br>25 °C<br>30<br>20<br>10<br>0<br>100 200 300 400 500<br>dIF/dt (A/μs)<br> (nC)<br>rr<br>Q<br>**----- End of picture text -----**<br> Fig. 8 - Typical Stored Charge vs. dIF/dt **Note** > (1) Formula used: TC = TJ - (Pd + PdREV) x RthJC; Pd = forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 5); PdREV = inverse power loss = VR1 x IR (1 - D); IR at VR1 = rated VR Revision: 28-Jan-2021 **4** For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Document Number: 96384 ## **VS-3EYH01HM3, VS-3EYH02HM3** www.vishay.com ## Vishay Semiconductors ## **ORDERING INFORMATION TABLE** **==> picture [390 x 225] intentionally omitted <==** **----- Start of picture text -----**<br> Device code VS- 3 E Y H 02 H M3<br>1 2 3 4 5 6 7 8<br>1 - Vishay Semiconductors product<br>2 - Current rating (3 = 3 A)<br>3 - Circuit configuration:<br> E = single diode<br>4 - Y = SlimSMAW (DO-221AD)<br>5 - Process type,<br>H = hyperfast recovery<br>6 - Voltage code (02 = 200 V)<br>7 - H = AEC-Q101 qualified<br>8 - M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free<br>**----- End of picture text -----**<br> ## **ORDERING INFORMATION** (Example) |**ORDERING INFORMATION**(Example)|**ORDERING INFORMATION**(Example)|**ORDERING INFORMATION**(Example)|**ORDERING INFORMATION**(Example)|**ORDERING INFORMATION**(Example)| |---|---|---|---|---| |**PREFERRED P/N**|**UNIT WEIGHT**<br>**(g)**|**PREFERRED PACKAGE CODE**|**BASE QUANTITY**|**PACKAGING DESCRIPTION**| |VS-3EYH01HM3/H|0.033|H|3500|7"diameter plastic tape and reel| |VS-3EYH01HM3/I|0.033|I|14 000|13"diameter plastic tape and reel| |VS-3EYH02HM3/H|0.033|H|3500|7"diameter plastic tape and reel| |VS-3EYH02HM3/I|0.033|I|14 000|13"diameter plastic tape and reel| |**LINKS TO RELATED DOCUMENTS**|**LINKS TO RELATED DOCUMENTS**|| |---|---|---| |Dimensions||www.vishay.com/doc?96582| |Part markinginformation||www.vishay.com/doc?95562| |Packaginginformation||www.vishay.com/doc?88869| |SPICE model||www.vishay.com/doc?96586| Revision: 28-Jan-2021 Document Number: 96384 **5** For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **Outline Dimensions** Vishay Semiconductors **==> picture [59 x 48] intentionally omitted <==** www.vishay.com ## **SlimSMAW (DO-221AD)** ## **DIMENSIONS** in inches (millimeters) ## **SlimSMAW (DO-221AD)** **==> picture [474 x 300] intentionally omitted <==** **----- Start of picture text -----**<br> Cathode band<br>0.106 (2.70) 0.075 (1.90)<br>0.091 (2.30) 0.063 (1.60)<br>0.158 (4.00) 0.032 (0.81) 0.024 (0.60)<br>0.142 (3.60) 0.014 (0.36) 0.012 (0.30)<br>0.197 (5.00)<br>0.173 (4.40)<br>0.043 (1.10)<br>0.035 (0.90)<br>0.009 (0.22)<br>0.004 (0.10)<br>0.083 (2.10) min.<br>0.118 (3.00) max.<br>0.055 (1.40) min. 0.055 (1.40) min.<br>0.228 (5.80) ref.<br>Mounting pad layout<br>**----- End of picture text -----**<br> Revision: 11-Dec-2018 Document Number: 96582 **1** For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **Legal Disclaimer Notice** Vishay www.vishay.com ## **Disclaimer** ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. _**© 2021 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED**_ Revision: 01-Jan-2021 Document Number: 91000 **1**
Updated at June 4, 2026
Vishay is a global leader in the manufacturing of discrete semiconductors and passive electronic components. Renowned for its exceptional quality and engineering expertise, the company produces highly reliable solutions that drive innovation across the industrial, automotive, telecommunications, and consumer electronics markets. From advanced factory automation to vehicle electrification, Vishay components provide the foundational building blocks for modern electronic design. The company's expansive portfolio is heavily focused on efficient power management, signal routing, and energy storage. Within its passive component lineup, Vishay is recognized for its extensive array of high-performance capacitors, including robust aluminium electrolytic, film, and polymer variants, alongside highly efficient power inductors. In the realm of discrete semiconductors, Vishay is a premier manufacturer of single and dual MOSFETs, as well as a vast selection of Schottky, Zener, and fast-recovery rectifier diodes designed for demanding power applications. Furthermore, Vishay delivers industry-leading circuit protection and thermal management solutions. With a broad offering of transient voltage suppressors (TVS diodes) and temperature-sensing NTC thermistors, these components are engineered to safeguard sensitive circuitry against both electrical and thermal overstress. By combining this vital mix of advanced discretes and passives, Vishay enables engineers to develop robust, space-saving, and highly resilient electronic systems.
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