VS-1EFH02-M3/I

## **VS-1EFH02-M3** www.vishay.com Vishay Semiconductors ae ~~a~~ **Hyperfast Rectifier, 1 A FRED Pt[®]** 

## **FEATURES** 

**==> picture [128 x 122] intentionally omitted <==**

**----- Start of picture text -----**<br>
eSMP [®] Series<br>Top view Bottom view<br>SMF (DO-219AB)<br>Cathode Anode<br>**----- End of picture text -----**<br>


- Hyperfast recovery time, reduced Qrr, and soft recovery 

- 175 °C maximum operating junction temperature 

- Specified for output and snubber operation 

- Low forward voltage drop 

- Low leakage current 

- Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C 

- Meets JESD 201 class 2 whisker test 

- Wave and reflow solderable 

- Compatible to SOD-123W package case outline 

## **LINKS TO ADDITIONAL RESOURCES** 

3D Models 

## **PRIMARY CHARACTERISTICS** 

|**PRIMARY CHARACTERISTICS**|**PRIMARY CHARACTERISTICS**|
|---|---|
|IF(AV)|1 A|
|VR|200 V|
|VFat IF(typ. 125 °C)|0.74 V|
|trr|25 ns|
|TJmax.|175 °C|
|Package|SMF (DO-219AB)|
|Circuit configuration|Single|



- Material categorization: for definitions of compliance please see ~~Oe~~ www.vishay.com/doc?99912 

## **DESCRIPTION / APPLICATIONS** 

State of the art hyperfast recovery rectifiers specifically designed with optimized performance of forward voltage drop and hyperfast recovery time. 

The planar structure and the platinum doped life time control guarantee the best overall performance, ruggedness, and reliability characteristics. 

These devices are intended for use in snubber, boost, lighting, as high frequency rectifiers, and freewheeling diodes. 

Their extremely optimized stored charge and low recovery current minimize the switching losses and reduce power dissipation in the switching element. 

## **MECHANICAL DATA** 

**Case:** SMF (DO-219AB) 

Molding compound meets UL 94 V-0 flammability rating Halogen-free, RoHS-compliant 

**Terminals:** matte tin plated leads, solderable per J-STD-002 

**Polarity:** color band denotes cathode end 

## **ABSOLUTE MAXIMUM RATINGS** 

|**ABSOLUTE MAXIMUM RATINGS**|**ABSOLUTE MAXIMUM RATINGS**|**ABSOLUTE MAXIMUM RATINGS**|**ABSOLUTE MAXIMUM RATINGS**|**ABSOLUTE MAXIMUM RATINGS**|
|---|---|---|---|---|
|**PARAMETER**|**SYMBOL**|**TEST CONDITIONS**|**VALUES**|**UNITS**|
|Peak repetitive reverse voltage|VRRM||200|V|
|Average rectified forward current|IF(AV)|TC= 160 °C(1)|1|A|
|Non-repetitive peak surge current|IFSM|TJ= 25 °C|35||
|Operatingjunction and storage temperature range|TJ, TStg||-65 to +175|°C|



## **Note** 

- (1) Device on PCB with 8 mm x 16 mm soldering lands 

Revision: 03-Feb-2021 

Document Number: 95785 

**1** 

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**VS-1EFH02-M3** 

www.vishay.com 

## Vishay Semiconductors 

## **ELECTRICAL SPECIFICATIONS** (TJ = 25 °C unless otherwise specified) 

|**ELECTRICAL SPECIFICATIONS**(TJ= 25 °C unless otherwise specified)|**ELECTRICAL SPECIFICATIONS**(TJ= 25 °C unless otherwise specified)|**ELECTRICAL SPECIFICATIONS**(TJ= 25 °C unless otherwise specified)|**ELECTRICAL SPECIFICATIONS**(TJ= 25 °C unless otherwise specified)|**ELECTRICAL SPECIFICATIONS**(TJ= 25 °C unless otherwise specified)|**ELECTRICAL SPECIFICATIONS**(TJ= 25 °C unless otherwise specified)|**ELECTRICAL SPECIFICATIONS**(TJ= 25 °C unless otherwise specified)|
|---|---|---|---|---|---|---|
|**PARAMETER**|**SYMBOL**|**TEST CONDITIONS**|**MIN.**|**TYP.**|**MAX.**|**UNITS**|
|Breakdown voltage, blockingvoltage|VBR, VR|IR= 100 μA|200|-|-|V|
|Forward voltage|VF|IF= 1 A|-|0.87|0.93||
|||IF= 1 A, TJ= 125 °C|-|0.74|0.8||
|Reverse leakage current|IR|VR= VRrated|-|-|2|μA|
|||TJ= 125 °C, VR= VRrated|-|1|8||
|Junction capacitance|CT|VR= 200 V|-|5|-|pF|



## **DYNAMIC RECOVERY CHARACTERISTICS** (TJ = 25 °C unless otherwise specified) 

|**DYNAMIC RECOVERY CHARACTERISTICS**(TJ= 25 °C unless otherwise specified)|**DYNAMIC RECOVERY CHARACTERISTICS**(TJ= 25 °C unless otherwise specified)|**DYNAMIC RECOVERY CHARACTERISTICS**(TJ= 25 °C unless otherwise specified)|**DYNAMIC RECOVERY CHARACTERISTICS**(TJ= 25 °C unless otherwise specified)|**DYNAMIC RECOVERY CHARACTERISTICS**(TJ= 25 °C unless otherwise specified)|**DYNAMIC RECOVERY CHARACTERISTICS**(TJ= 25 °C unless otherwise specified)|**DYNAMIC RECOVERY CHARACTERISTICS**(TJ= 25 °C unless otherwise specified)|**DYNAMIC RECOVERY CHARACTERISTICS**(TJ= 25 °C unless otherwise specified)|
|---|---|---|---|---|---|---|---|
|**PARAMETER**|**SYMBOL**|**TEST CONDITIONS**||**MIN.**|**TYP.**|**MAX.**|**UNITS**|
|Reverse recovery time|trr|IF= 1 A, dIF/dt = 50 A/μs, VR= 30 V||-|24|-|ns|
|||IF= 0.5 A, IR= 1 A, Irr= 0.25 A||-|-|25||
|||TJ= 25 °C|IF= 1 A<br>dIF/dt = 200 A/μs<br>VR= 160 V|-|16|-||
|||TJ= 125 °C||-|23|-||
|Peak recovery current|IRRM|TJ= 25 °C||-|1.6|-|A|
|||TJ= 125 °C||-|2.5|-||
|Reverse recovery charge|Qrr|TJ= 25 °C||-|13|-|nC|
|||TJ= 125 °C||-|30|-||



## **THERMAL - MECHANICAL SPECIFICATIONS** 

|**THERMAL - MECHANICAL SPECIFICATIONS**|**THERMAL - MECHANICAL SPECIFICATIONS**|**THERMAL - MECHANICAL SPECIFICATIONS**|**THERMAL - MECHANICAL SPECIFICATIONS**|**THERMAL - MECHANICAL SPECIFICATIONS**|**THERMAL - MECHANICAL SPECIFICATIONS**|**THERMAL - MECHANICAL SPECIFICATIONS**|
|---|---|---|---|---|---|---|
|**PARAMETER**|**SYMBOL**|**TEST CONDITIONS**|**MIN.**|**TYP.**|**MAX.**|**UNITS**|
|Maximum junction and storage<br>temperature range|TJ, TStg||-65|-|+175|°C|
|Thermal resistance, junction to mount|RthJM|Device mounted on PCB with 8 mm x 16 mm<br>solderinglands|-|-|17|°C/W|
|Thermal resistance, junction to ambient|RthJA|Device mounted on PCB with 2 mm x 3.5 mm<br>solderinglands|<br>-|-|140|°C/W|
|Approximate weight|||0.015|||g|
||||0.0005|||oz.|
|Markingdevice||Case style SMF (DO-219AB)|MDH||||



**==> picture [496 x 182] intentionally omitted <==**

**----- Start of picture text -----**<br>
100 100<br>175 °C<br>10<br>150 °C<br>10 TJ = 175  ° C<br>1 125 °C<br>TJ = 150 °C 0.1<br>1 TJ = 125 °C<br>T J  = 25 °C 0.01 25 °C<br>T J  = -40 °C<br>0.1 0.001<br>0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 0 50 100 150 200<br>VF - Forward Voltage Drop (V) VR - Reverse Voltage (V)<br>Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage<br> - Reverse Current (µA)<br>IR<br> - Instantaneous Forward Current (A)<br>IF<br>**----- End of picture text -----**<br>


Revision: 03-Feb-2021 

Document Number: 95785 

**2** 

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**VS-1EFH02-M3** 

**==> picture [77 x 10] intentionally omitted <==**

**----- Start of picture text -----**<br>
www.vishay.com<br>**----- End of picture text -----**<br>


## Vishay Semiconductors 

**==> picture [203 x 165] intentionally omitted <==**

**----- Start of picture text -----**<br>
100<br>10<br>1<br>0 50 100 150 200<br>VR - Reverse Voltage (V)<br> - Junction Capacitance (pF)<br>T<br>C<br>**----- End of picture text -----**<br>


Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage 

**==> picture [202 x 148] intentionally omitted <==**

**----- Start of picture text -----**<br>
1.25<br>RMS limit<br>1<br>0.75<br>D = 0.02<br>0.5 D = 0.05<br>D = 0.1<br>D = 0.2<br>0.25 D = 0.5<br>DC<br>0<br>0 0.25 0.5 0.75 1 1.25 1.5<br>Average Power Loss (W)<br>**----- End of picture text -----**<br>


**==> picture [135 x 10] intentionally omitted <==**

**----- Start of picture text -----**<br>
IF(AV) - Average Forward Current (A)<br>**----- End of picture text -----**<br>


Fig. 5 - Forward Power Loss Characteristics 

**==> picture [470 x 166] intentionally omitted <==**

**----- Start of picture text -----**<br>
180 35<br>175 30<br>170 25<br>DC 125 °C<br>165 20<br>25 °C<br>160 15<br>Square wave (D = 0.50)<br>155 80 % rated VR applied 10<br>See note  [(1)]<br>150 5<br>0 0.2 0.4 0.6 0.8 1 1.2 100 1000<br>IF(AV) - Average Forward Current (A) dIF/dt (A/µs)<br>C)<br>°<br> (ns)<br>trr<br>Allowable Case Temperature (<br>**----- End of picture text -----**<br>


Fig. 4 - Maximum Allowable Case Temperature vs. Average Forward Current 

Fig. 6 - Typical Reverse Recovery Time vs. dIF/dt 

**==> picture [205 x 164] intentionally omitted <==**

**----- Start of picture text -----**<br>
40<br>35<br>125 °C<br>30<br>25<br>20<br>25 °C<br>15<br>10<br>100 1000<br>dIF/dt (A/µs)<br> (nC)<br>rr<br>Q<br>**----- End of picture text -----**<br>


Fig. 7 - Typical Stored Charge vs. dIF/dt 

## **Note** 

> (1) Formula used: TC = TJ - (Pd + PdREV) x RthJC; Pd = forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 5); PdREV = inverse power loss = VR1 x IR (1 - D); IR at VR1 = rated VR 

Revision: 03-Feb-2021 

Document Number: 95785 

**3** For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**VS-1EFH02-M3** 

www.vishay.com 

## Vishay Semiconductors 

**==> picture [271 x 221] intentionally omitted <==**

**----- Start of picture text -----**<br>
(3)<br>IF trr<br>ta tb<br>0<br>(4)<br>Qrr<br>(2)<br>IRRM 0.5 IRRM<br>di(rec)M/dt (5)<br>0.75 IRRM<br>(1) diF/dt<br>(1) diF/dt - rate of change of current  (4) Qrr - area under curve defined by trr<br>      through zero crossing       and IRRM<br>(2) IRRM - peak reverse recovery current Qrr = t      2rr x IRRM<br>     from zero crossing point of negative (3) trr - reverse recovery time measured  (5) di(rec)M/dt - peak rate of change of<br>     going IF to point where a line passing        current during tb portion of trr<br>     through 0.75 IRRM and 0.50 IRRM<br>     extrapolated to zero current.<br>**----- End of picture text -----**<br>


Fig. 8 - Reverse Recovery Waveform and Definitions 

## **ORDERING INFORMATION TABLE** 

**==> picture [396 x 209] intentionally omitted <==**

**----- Start of picture text -----**<br>
Device code VS- 1 E F H 02 -M3<br>1 2 3 4 5 6 7<br>1 - Vishay Semiconductors product<br>2 - Current rating (1 = 1 A)<br>3 - Circuit configuration:<br>  E = single diode<br>4 - F = SMF package<br>5 - Process type,<br>H = hyperfast recovery<br>6 - Voltage code (02 = 200 V)<br>7 - -M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free<br>**----- End of picture text -----**<br>


|**ORDERING INFORMATION** (Example)|**ORDERING INFORMATION** (Example)|**ORDERING INFORMATION** (Example)|**ORDERING INFORMATION** (Example)|**ORDERING INFORMATION** (Example)|
|---|---|---|---|---|
|**PREFERRED P/N**|**QUANTITY PER REEL**|**MINIMUM ORDER QUANTITY**||**PACKAGING DESCRIPTION**|
|VS-1EFH02-M3/I|10 000|10 000||13"diameter plastic tape and reel|
||||||
|**LINKS TO RELATED DOCUMENTS**|||||
|Dimensions|||www.vishay.com/doc?95572||
|Part markinginformation|||www.vishay.com/doc?95618||
|Packaginginformation|||www.vishay.com/doc?95577||
|SPICE model|||www.vishay.com/doc?96012||



Revision: 03-Feb-2021 

**4** 

Document Number: 95785 

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**Outline Dimensions** 

**==> picture [59 x 48] intentionally omitted <==**

www.vishay.com 

## Vishay Semiconductors 

## **SMF (DO-219AB)** 

## **DIMENSIONS** in millimeters (inches) 

**==> picture [315 x 453] intentionally omitted <==**

**----- Start of picture text -----**<br>
0.85 (0.033)<br>0.35 (0.014)<br>  Detail Z<br>  enlarged<br>1.08 (0.043)<br>2.9 (0.114)<br>0.88 (0.035)<br>2.7 (0.106)<br>3.9 (0.154)<br>3.5 (0.138)<br>Foot print recommendation:<br>1.3 (0.051) 1.3 (0.051)<br>2.9 (0.114)<br>5<br>5<br>0.25 (0.010) 0.10 (0.003) 0.1 (0.004) 0 (0.000)<br>1.2 (0.047) 0.8 (0.031)<br>1.9 (0.075) 1.7 (0.067)<br>1.4 (0.055)<br>**----- End of picture text -----**<br>


Created - Date: 15. February 2005 Rev. 3 - Date: 13. March 2007 Document no.:S8-V-3915.01-001 (4) 17247 

Revision: 16-Apr-18 

Document Number: 95572 

**1** 

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**Legal Disclaimer Notice** Vishay 

www.vishay.com 

## **Disclaimer** 

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 

Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product.  To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. 

Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications.  Such statements are not binding statements about the suitability of products for a particular application.  It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time.  All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts.  Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. 

Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. 

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay.  Product names and markings noted herein may be trademarks of their respective owners. 

_**© 2021 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED**_ 

Revision: 01-Jan-2021 

Document Number: 91000 

**1**