VS-15EWX06FN-M3
Fast / Ultrafast Diode, 600 V, 15 A, Single, 3.2 V, 32 ns, 120 A
- Manufacturer: VISHAY
- Product type: Fast & Ultrafast Recovery Rectifier Diodes
- Repetitive Reverse Voltage Vrrm Max:600V; Forward Current If(AV):15A; Diode Configuration:Single; Forward Voltage VF Max:3.2V; Reverse Recovery Time trr Max:32ns; Forward Surge Current
- SVHC: Lead (04-Feb-2026)
- No. of Pins: 3 Pin
- Product Range: VS-15
- Qualification: -
- Diode Case Style: TO-252AA
- Diode Configuration: Single
- Forward Voltage Max: 3.2V
- Forward Surge Current: 120A
- Reverse Recovery Time: 32ns
- Average Forward Current: 15A
- Operating Temperature Max: 175°C
- Repetitive Peak Reverse Voltage: 600V
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 0.62 € |
| Current stock | 200+ |
| Lead time | 30 days |
**VS-15EWX06FN-M3** www.vishay.com ## Vishay Semiconductors ## **Hyperfast Rectifier, 15 A FRED Pt[®]** ## **FEATURES** - Hyperfast recovery time, extremely low Qrr **==> picture [181 x 73] intentionally omitted <==** **----- Start of picture text -----**<br> 2, 4<br>SS’<br>1 3<br>N/C Anode<br>DPAK (TO-252AA)<br>**----- End of picture text -----**<br> - 175 °C maximum operating junction temperature - For PFC CCM operation - Low forward voltage drop - Low leakage current - Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C - Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 ## **PRIMARY CHARACTERISTICS** |**PRIMARY CHARACTERISTICS**|**PRIMARY CHARACTERISTICS**| |---|---| |IF(AV)|15 A| |VR|600 V| |VFat IF|1.5 V| |trr(typ.)|18 ns| |TJmax.|175 °C| |Package|DPAK (TO-252AA)| |Circuit configuration|Single| ## **DESCRIPTION / APPLICATIONS** State of the art hyperfast recovery rectifiers designed with optimized performance of forward voltage drop, hyperfast recovery time, and soft recovery. The planar structure and the platinum doped life time control guarantee the best overall performance, ruggedness and reliability characteristics. These devices are intended for use in PFC boost stage in the AC/DC section of SMPS inverters or as freewheeling diodes. Their extremely optimized stored charge and low recovery current minimize the switching losses and reduce over dissipation in the switching element and snubbers. ## **ABSOLUTE MAXIMUM RATINGS** |**ABSOLUTE MAXIMUM RATINGS**|**ABSOLUTE MAXIMUM RATINGS**|**ABSOLUTE MAXIMUM RATINGS**|**ABSOLUTE MAXIMUM RATINGS**|**ABSOLUTE MAXIMUM RATINGS**| |---|---|---|---|---| |**PARAMETER**|**SYMBOL**|**TEST CONDITIONS**|**VALUES**|**UNITS**| |Peak repetitive reverse voltage|VRRM||600|V| |Average rectified forward current|IF(AV)|TC= 117 °C|15|A| |Non-repetitive peak surge current|IFSM|TJ= 25 °C|120|| |Peak repetitive forward current|IFM|TC= 117 °C, f = 20 kHz, d = 50 %|30|| |Operatingjunction and storage temperatures|TJ, TStg||-55 to +175|°C| ~~Cn~~ **ELECTRICAL SPECIFICATIONS** (TJ = 25 °C unless otherwise specified) ~~a~~ **PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS** Breakdown voltage,blocking voltage VVBRR , IR = 100 μA 600 - - IF = 15 A - 2.3 3.2 V Forward voltage VF IF = 15 A, TJ = 125 °C ~~==—~~ - 1.6 1.9 ~~==eeeCa~~ IF = 15 A, TJ = 150 °C - 1.5 1.8 ~~a~~ VR = VR rated - - 50 Reverse leakage current IR TJ = 125 °C, VR = VR rated - - 200 μA ~~eeea~~ TJ = 150 °C, VR = VR rated - - 300 ~~Ca~~ Junction capacitance CT VR = 600 V - 11 - pF ~~Ca~~ Series inductance LS Measured lead to lead 5 mm from package body - 8 - nH Revision: 05-Jun-2023 Document Number: 93239 **1** For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **VS-15EWX06FN-M3** www.vishay.com ## Vishay Semiconductors ## **DYNAMIC RECOVERY CHARACTERISTICS** (TJ = 25 °C unless otherwise specified) |**DYNAMIC RECOVERY CHARACTERISTICS**(TJ= 25 °C unless otherwise specified)|**DYNAMIC RECOVERY CHARACTERISTICS**(TJ= 25 °C unless otherwise specified)|**DYNAMIC RECOVERY CHARACTERISTICS**(TJ= 25 °C unless otherwise specified)|**DYNAMIC RECOVERY CHARACTERISTICS**(TJ= 25 °C unless otherwise specified)|**DYNAMIC RECOVERY CHARACTERISTICS**(TJ= 25 °C unless otherwise specified)|**DYNAMIC RECOVERY CHARACTERISTICS**(TJ= 25 °C unless otherwise specified)|**DYNAMIC RECOVERY CHARACTERISTICS**(TJ= 25 °C unless otherwise specified)|**DYNAMIC RECOVERY CHARACTERISTICS**(TJ= 25 °C unless otherwise specified)| |---|---|---|---|---|---|---|---| |**PARAMETER**|**SYMBOL**|**TEST CONDITIONS**||**MIN.**|**TYP.**|**MAX.**|**UNITS**| |Reverse recovery time|trr|IF= 1 A, dIF/dt = 100 A/μs, VR= 30 V||-|18|22|ns| |||IF= 1 A, dIF/dt = 50 A/μs, VR= 30 V||-|22|-|| |||IF= 15 A, dIF/dt = 100 A/μs, VR= 30 V||-|17|32|| |||TJ= 25 °C|IF= 15 A<br>dIF/dt = 200 A/μs<br>VR= 390 V|-|22|-|| |||TJ= 125 °C||-|38|-|| |Peak recovery current|IRRM|TJ= 25 °C||-|3.1|-|A| |||TJ= 125 °C||-|4.6|-|| |Reverse recovery charge|Qrr|TJ= 25 °C||-|37|-|nC| |||TJ= 125 °C||-|92|-|| ## **THERMAL - MECHANICAL SPECIFICATIONS** |**THERMAL - MECHANICAL SPECIFICATIONS**|**THERMAL - MECHANICAL SPECIFICATIONS**|**THERMAL - MECHANICAL SPECIFICATIONS**|**THERMAL - MECHANICAL SPECIFICATIONS**|**THERMAL - MECHANICAL SPECIFICATIONS**|**THERMAL - MECHANICAL SPECIFICATIONS**|**THERMAL - MECHANICAL SPECIFICATIONS**| |---|---|---|---|---|---|---| |**PARAMETER**|**SYMBOL**|**TEST CONDITIONS**|**MIN.**|**TYP.**|**MAX.**|**UNITS**| |Maximum junction and storage<br>temperature range|TJ, TStg||-55|-|175|°C| |Thermal resistance,<br>junction to case per leg|RthJC||-|1.4|1.8|°C/W| |Thermal resistance,<br>junction to ambient per leg|RthJA||-|-|70|| |Approximate weight|||0.3|||g| ||||0.01|||oz.| |Markingdevice||Case style DPAK (TO-252AA)|15EWX06FN|||| **==> picture [202 x 166] intentionally omitted <==** **----- Start of picture text -----**<br> 100<br>T J = 175 °C<br>10<br>TJ = 150 °C<br>TJ = 125 °C<br>1<br>TJ = 25 °C<br>0.1<br>0.2 0.7 1.2 1.7 2.2 2.7 3.2 3.7<br>93239_01 VF - Forward Voltage Drop (V)<br> - Instantaneous Forward Current (A)<br>IF<br>**----- End of picture text -----**<br> Fig. 1 - Typical Forward Voltage Drop Characteristics **==> picture [203 x 165] intentionally omitted <==** **----- Start of picture text -----**<br> 1000<br>TJ = 175 °C<br>100<br>TJ = 150 °C<br>10 TJ = 125 ° C<br>TJ = 100 °C<br>1<br>TJ = 75 °C<br>0.1 TJ = 50 °C<br>0.01<br>TJ = 25 °C<br>0.001<br>0 100 200 300 400 500 600<br>93239_02 VR - Reverse Voltage (V)<br> - Reverse Current (μA)<br>IR<br>**----- End of picture text -----**<br> Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage Revision: 05-Jun-2023 Document Number: 93239 **2** For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **VS-15EWX06FN-M3** www.vishay.com ## Vishay Semiconductors **==> picture [203 x 165] intentionally omitted <==** **----- Start of picture text -----**<br> 100<br>10<br>1<br>0 100 200 300 400 500 600<br>93239_03 VR - Reverse Voltage (V)<br> - Junction Capacitance (pF)<br>T<br>C<br>**----- End of picture text -----**<br> Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage **==> picture [405 x 164] intentionally omitted <==** **----- Start of picture text -----**<br> 10<br>1<br>D = 0.50<br>D = 0.20<br>0.1<br>D = 0.10<br>D = 0.05<br>Single pulse D = 0.02<br>(thermal resistance) D = 0.01<br>0.01<br>0.00001 0.0001 0.001 0.01 0.1 1<br>93239_04 t1 - Rectangular Pulse Duration (s)<br> - Thermal Impedance (°C/W)<br>thJC<br>Z<br>**----- End of picture text -----**<br> Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics **==> picture [212 x 191] intentionally omitted <==** **----- Start of picture text -----**<br> 180<br>160<br>DC<br>140<br>120<br>Square wave (D = 0.50)<br>100 Rated V R applied<br>See note (1)<br>80<br>0 5 10 15 20 25<br>93239_05 IF(AV) - Average Forward Current (A)<br>Fig. 5 - Maximum Allowable Case Temperature vs.<br>Average Forward Current<br>Allowable Case Temperature (°C)<br>**----- End of picture text -----**<br> **==> picture [201 x 165] intentionally omitted <==** **----- Start of picture text -----**<br> 45<br>40<br>35<br>30<br>RMS limit<br>25<br>D = 0.01<br>20<br>D = 0.02<br>D = 0.05<br>15<br>D = 0.10<br>10 D = 0.20<br>D = 0.50<br>5 DC<br>0<br>0 5 10 15 20 25<br>93239_06 IF(AV) - Average Forward Current (A)<br>Average Power Loss (W)<br>**----- End of picture text -----**<br> Fig. 6 - Forward Power Loss Characteristics Revision: 05-Jun-2023 Document Number: 93239 **3** For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **VS-15EWX06FN-M3** ## www.vishay.com ## Vishay Semiconductors **==> picture [471 x 165] intentionally omitted <==** **----- Start of picture text -----**<br> 45 250<br>40<br>IF = 15 A, TJ = 125 °C 200<br>35<br>30 150 I F = 15 A, T J = 125 °C<br>25<br>100<br>20<br>IF = 15 A, TJ = 25 °C<br>50<br>15<br>IF = 15 A, TJ = 25 °C<br>10 0<br>100 1000 100 1000<br>93239_07 dIF/dt (A/μs) 93239_08 dIF/dt (A/μs)<br> (ns) (nC)<br>trr Qrr<br>**----- End of picture text -----**<br> **==> picture [175 x 9] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt<br>**----- End of picture text -----**<br> **==> picture [143 x 9] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 8 - Typical Stored Charge vs. dIF/dt<br>**----- End of picture text -----**<br> ## **Note** > (1) Formula used: TC = TJ - (Pd + PdREV) x RthJC; Pd = forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = inverse power loss = VR1 x IR (1 - D); IR at VR1 = rated VR **==> picture [272 x 221] intentionally omitted <==** **----- Start of picture text -----**<br> (3)<br>IF trr<br>ta tb<br>0<br>(4)<br>Qrr<br>(2)<br>IRRM 0.5 IRRM<br>di(rec)M/dt (5)<br>0.75 IRRM<br>(1) diF/dt<br>(1) diF/dt - rate of change of current (4) Qrr - area under curve defined by trr<br> through zero crossing and IRRM<br>(2) IRRM - peak reverse recovery current Qrr = t 2rr x IRRM<br>(3) t from zero crossing point of negative rr - reverse recovery time measured (5) di(rec)M/dt - peak rate of change of<br> going IF to point where a line passing current during tb portion of trr<br> through 0.75 IRRM and 0.50 IRRM<br> extrapolated to zero current.<br>**----- End of picture text -----**<br> Fig. 9 - Reverse Recovery Waveform and Definitions **4** Revision: 05-Jun-2023 Document Number: 93239 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **VS-15EWX06FN-M3** www.vishay.com ## Vishay Semiconductors ## **ORDERING INFORMATION TABLE** **==> picture [344 x 282] intentionally omitted <==** **----- Start of picture text -----**<br> Device code VS- 15 E W X 06 FN TRL -M3<br>1 2 3 4 5 6 7 8 9<br>1 - Vishay Semiconductors product<br>2 - Current rating (15 = 15 A)<br>3 - Circuit configuration:<br>E = Single diode<br>4 - Package identifier:<br>W = D-PAK<br>5 - X = hyperfast recovery time<br>6 - Voltage rating (06 = 600 V)<br>7 - FN = TO-252AA<br>8 - None = tube<br> TR = tape and reel<br> TRL = tape and reel (left oriented)<br> TRR = tape and reel (right oriented)<br>9 - Environmental digit:<br>**----- End of picture text -----**<br> - -M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free |**ORDERING INFORMATION** (Example)|**ORDERING INFORMATION** (Example)|**ORDERING INFORMATION** (Example)| |---|---|---| |**PREFERRED P/N**|**BASE QUANTITY**|**PACKAGING DESCRIPTION**| |VS-15EWX06FN-M3|75|Antistatic plastic tube| |VS-15EWX06FNTR-M3|2000|13" diameter reel| |VS-15EWX06FNTRL-M3|3000|13" diameter reel| |VS-15EWX06FNTRR-M3|3000|13" diameter reel| |**LINKS TO RELATED DOCUMENTS**|**LINKS TO RELATED DOCUMENTS**|| |---|---|---| |Dimensions||www.vishay.com/doc?95627| |Part markinginformation||www.vishay.com/doc?95176| |Packaginginformation||www.vishay.com/doc?95033| |SPICE model||www.vishay.com/doc?96041| Revision: 05-Jun-2023 Document Number: 93239 **5** For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **Outline Dimensions** **==> picture [59 x 48] intentionally omitted <==** www.vishay.com Vishay Semiconductors ## **D-PAK (TO-252AA) “M”** ## **DIMENSIONS** in millimeters and inches **==> picture [494 x 242] intentionally omitted <==** **----- Start of picture text -----**<br> (5) A Pad layout<br>E A C<br>b3 (3) 0.010 M C A B c2 0.265 MIN.<br>L3 (3) A E1 (6.74)<br>Ø 1<br>Ø 2 4 4<br>B 0.245 MIN.<br>Seating D1 (6.23)<br>plane<br>D (5)<br>H 0.488 (12.40)<br>0.409 (10.40)<br>1 2 3 L4 3 2 1<br>0.089<br>MIN.<br>(2) L5 Detail “C” (2.28)<br>b c A 0.06 MIN.<br>b2 (1.524)<br>0.010 M C A B<br>2 x e<br>0.093 (2.38)<br>Detail “C” (L1) 0.085 (2.18)<br>Rotated 90 °CW<br>Scale: 20:1<br>Lead tip H (7)<br>Gauge C<br>plane C Seating<br>C plane<br>L2<br>Ø L A1<br>**----- End of picture text -----**<br> |**SYMBOL**|**MILLIMETERS**|**MILLIMETERS**|**INCHES**<br><br>**MIN.**<br>**MAX.**|**INCHES**<br><br>**MIN.**<br>**MAX.**|**NOTES**||**SYMBOL**|**MILLIMETERS**|**MILLIMETERS**|**INCHES**|**INCHES**|**NOTES**| |---|---|---|---|---|---|---|---|---|---|---|---|---| ||**MIN.**|**MAX.**|**MIN.**|||||**MIN.**|**MAX.**|**MIN.**|**MAX.**|| |A|2.18|2.39|0.086|0.094|||e|2.29 BSC||0.090 BSC||| |A1|-|0.13|-|0.005|||H|9.40|10.41|0.370|0.410|| |b|0.64|0.89|0.025|0.035|||L|1.40|1.78|0.055|0.070|| |b2|0.76|1.14|0.030|0.045|||L1|2.74 BSC||0.108 REF.||| |b3|4.95|5.46|0.195|0.215|3||L2|0.51 BSC||0.020 BSC||| |c|0.46|0.61|0.018|0.024|||L3|0.89|1.27|0.035|0.050|3| |c2|0.46|0.89|0.018|0.035|||L4|-|1.02|-|0.040|| |D|5.97|6.22|0.235|0.245|5||L5|1.14|1.52|0.045|0.060|2| |D1|5.21|-|0.205|-|3||Ø|0°|10°|0°|10°|| |E|6.35|6.73|0.250|0.265|5||Ø1|0°|15°|0°|15°|| |E1|4.32|-|0.170|-|3||Ø2|25°|35°|25°|35°|| ## **Notes** > (1) Dimensioning and tolerancing as per ASME Y14.5M-1994 - (2) Lead dimension uncontrolled in L5 > (3) Dimension D1, E1, L3 and b3 establish a minimum mounting surface for thermal pad > (4) Section C - C dimension apply to the flat section of the lead between 0.13 and 0.25 mm (0.005 and 0.10") from the lead tip > (5) Dimension D, and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body > (6) Dimension b1 and c1 applied to base metal only > (7) Datum A and B to be determined at datum plane H - (8) Outline conforms to JEDEC® outline TO-252AA Revision: 24-Jun-16 Document Number: 95627 **1** For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **Legal Disclaimer Notice** Vishay www.vishay.com ## **Disclaimer** ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer's technical experts. Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein. Hyperlinks included in this datasheet may direct users to third-party websites. These links are provided as a convenience and for informational purposes only. Inclusion of these hyperlinks does not constitute an endorsement or an approval by Vishay of any of the products, services or opinions of the corporation, organization or individual associated with the third-party website. Vishay disclaims any and all liability and bears no responsibility for the accuracy, legality or content of the third-party website or for that of subsequent links. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. _**© 2023 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED**_ Revision: 01-Jan-2023 Document Number: 91000 **1**
Updated at June 4, 2026
Vishay is a global leader in the manufacturing of discrete semiconductors and passive electronic components. Renowned for its exceptional quality and engineering expertise, the company produces highly reliable solutions that drive innovation across the industrial, automotive, telecommunications, and consumer electronics markets. From advanced factory automation to vehicle electrification, Vishay components provide the foundational building blocks for modern electronic design. The company's expansive portfolio is heavily focused on efficient power management, signal routing, and energy storage. Within its passive component lineup, Vishay is recognized for its extensive array of high-performance capacitors, including robust aluminium electrolytic, film, and polymer variants, alongside highly efficient power inductors. In the realm of discrete semiconductors, Vishay is a premier manufacturer of single and dual MOSFETs, as well as a vast selection of Schottky, Zener, and fast-recovery rectifier diodes designed for demanding power applications. Furthermore, Vishay delivers industry-leading circuit protection and thermal management solutions. With a broad offering of transient voltage suppressors (TVS diodes) and temperature-sensing NTC thermistors, these components are engineered to safeguard sensitive circuitry against both electrical and thermal overstress. By combining this vital mix of advanced discretes and passives, Vishay enables engineers to develop robust, space-saving, and highly resilient electronic systems.
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