VP0109N3-G

_**Su ertex inc. p**_ 

**VP0109** 

- **P-Channel Enhancement-Mode** 

- ~~=~~ **Vertical DMOS FETs Features General Description** ► Free from secondary breakdown This enhancement-mode (normally-off) transistor utilizes 

This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. 

- Low power drive requirement 

- Ease of paralleling 

- Low CISS and fast switching speeds 

- Excellent thermal stability 

- Integral source-drain diode 

- High input impedance and high gain 

## **Applications** 

- Motor controls 

Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. 

- Converters 

- Amplifiers 

- Switches 

- Power supply circuits 

- Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.) 

**Ordering Information Product Summary Part Number Package Option Packing R I BV /BV DS(ON) D(ON)** VP0109N3-G TO-92 1000/Bag **DSS DGS (max) (min)** VP0109N3-G P002 -90V 8.0Ω -500mA VP0109N3-G P003 VP0109N3-G P005 TO-92 2000/Reel **Pin Configuration** VP0109N3-G P013 VP0109N3-G P014 ~~=|)~~ _-G denotes a lead (Pb)-free / RoHS compliant package._ ~~.~~ _Contact factory for Wafer / Die availablity. Devices in Wafer / Die form are lead (Pb)-free / RoHS compliant._ **DRAIN SOURCE Absolute Maximum Ratings** 

**Parameter Value GATE** Drain-to-source voltage BVDSS **TO-92** Drain-to-gate voltage BVDGS Gate-to-source voltage ±20V **Product Marking** Operating and storage temperature -55[O] C to +150[O] C **SiVP** YY = Year Sealed _Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied. Continuous operation_ **0 1 0 9** WW = Week Sealed _of the device at the absolute rating level may affect device reliability. All voltages are_ **Y Y W W** = “Green” Packaging ~~——~~ _referenced to device ground._ ~~-~~ _Package may or may not include the following marks: Si or_ **Typical Thermal Resistance TO-92 Package** _**θja**_ TO-92 132[O] C/W ~~—_—~~ _Doc.# DSFP-VP0109_ _**Supertex inc.** C082313_ _**www.supertex.com**_ 

**VP0109** 

## **Thermal Characteristics** 

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Package (continuous)ID [†] (pulsed)ID Power Dissipation@TC = 25 [O] C IDR † IDRM<br>TO-92 -250mA -800mA 1.0W -250mA -800A<br>**----- End of picture text -----**<br>


_**Notes:**_ 

_†    ID (continuous) is limited by max rated Tj ._ 

## **Electrical Characteristics** _(TA = 25°C unless otherwise specified)_ 

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Sym Parameter Min Typ Max Units Conditions<br>BVDSS Drain-to-source breakdown voltage -90 - - V VGS = 0V, ID = -1.0mA<br>VGS(th) Gate threshold voltage -1.5 - -3.5 V VGS = VDS, ID = -1.0mA<br>ΔVGS(th) Change in VGS(th) with temperature - 5.8 6.5 mV/ [O] C VGS = VDS, ID = -1.0mA<br>IGSS Gate body leakage current - -1.0 -100 nA VGS = ±20V, VDS = 0V<br>- - -10 µA VGS = 0V, VDS = Max Rating<br>IDSS Zero gate voltage drain current - - -1.0 mA VDS = 0.8 Max Rating,<br>VGS = 0V, TA = 125 [O] C<br>I On-state drain current -0.15 -0.25 - A VGS = -5.0V, VDS = -25V<br>D(ON) -0.5 -1.2 - VGS = -10V, VDS = -25V<br>R Static drain-to-source - 11 15 Ω VGS = -5.0V, ID = -100mA<br>DS(ON) on-state resistance - 6.0 8.0 VGS = -10V, ID = -500mA<br>ΔRDS(ON) Change in RDS(ON) with temperature - 0.55 1.0 %/ [O] C VGS = -10V, ID = -500mA<br>GFS Forward transconductance 150 190 - mmho  VDS = -25V, ID = -500mA<br>CISS Input capacitance - 45 60 VGS = 0V,<br>COSS Common source output capacitance - 22 30 pF VDS = -25V,<br>CRSS Reverse transfer capacitance - 3.0 8.0 f = 1.0MHz<br>td(ON) Turn-on delay time - 4.0 6.0<br>t Rise time - 3.0 10 VDD = -25V,<br>td(OFF)r Turn-off delay time - 8.0 12 ns RID = -500mA,GEN = 25Ω<br>t Fall time - 4.0 10<br>f<br>VSD Diode forward voltage drop - -1.2 -2.0 V VGS = 0V, ISD = -1.0A<br>trr Reverse recovery time - 400 - ns VGS = 0V, ISD = -1.0A<br>**----- End of picture text -----**<br>


_**Notes:**_ 

_1. All D.C. parameters 100% tested at 25[O] C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)_ 

_2. All A.C. parameters sample tested._ 

## **Switching Waveforms and Test Circuit** 

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0V Pulse<br>10%<br>Generator<br>INPUT<br>-10V 90% RGEN<br>t(ON) t(OFF)<br>D.U.T.<br>td(ON) tr td(OFF) tf INPUT<br>OUTPUT<br>0V<br>OUTPUT 90% 90% RL<br>10% 10%<br>VDD<br>VDD<br>**----- End of picture text -----**<br>


_**Supertex inc. www.supertex.com**_ 

_Doc.# DSFP-VP0109 C082313_ 

2 

**VP0109** 

## **Typical Performance Curves** 

## **BVDSS Variation with Temperature** 

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1.10<br>1.06<br>1.02<br>0.98<br>0.94<br>0.90<br>-50                     0                     50                  100                  150<br>Tj ( [O] C)<br>Transfer Characteristics<br>-1.0<br>TA = -55 [O] C<br>VDS = -25V<br>-0.8  TA = 25 [O] C<br>-0.6<br>-0.4  TA = 125 [O] C<br>-0.2<br>0<br>0                -2                -4                -6                -8               -10<br>VGS (volts)<br>Capacitance vs. Drain-to-Source Voltage<br>100<br>f = 1MHz<br>75<br>50<br>CISS<br>25<br>COSS<br>CRSS<br>0<br>0                     -10                   -20                  -30                   -40<br>VDS (volts)<br> (normalized)<br>DSS<br>BV<br> (amperes)<br>ID<br>C (picofarads)<br>**----- End of picture text -----**<br>


## **Capacitance vs. Drain-to-Source Voltage** 

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On-Resistance vs. Drain Current<br>**----- End of picture text -----**<br>


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50<br>40  VGS = -5.0V<br>VGS = -10V<br>30<br>20<br>10<br>0<br>0              -0.3             -0.6             -0.9             -1.2             -1.5<br>ID (amperes)<br>V(th) and RDS Variation with Temperature<br>-1.6<br>-1.6<br>RDS(ON) @ 10V, -0.5A<br>-1.4<br>RDS(ON) @ -5V, -0.1A  -1.4<br>-1.2<br>-1.2<br>-1.0<br>-1.0<br>-0.8<br>V(th) @ -1.0mA  -0.8<br>0.6<br>-50                     0                     50                  100                  150<br>Tj ( [O] C)<br> (ohms)<br>DS(ON)<br>R<br> (normalized)  (normalized)<br>GS(th) DS(ON)<br>V R<br>**----- End of picture text -----**<br>


**Gate Drive Dynamic Characteristics** 

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-10<br>VDS = -10V<br>-8<br>70pf  VDS = -40V<br>-6<br>70pf<br>-4<br>-2  45pf<br>0<br>0                0.2              0.4              0.6              0.8              1.0<br>QG (nanocoulombs)<br> (volts)<br>GS<br>V<br>**----- End of picture text -----**<br>


_**Supertex inc.**_ 

_Doc.# DSFP-VP0109 C082313_ 

_**www.supertex.com**_ 

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**VP0109** 

## **Typical Performance Curves** _**(cont.)**_ 

**Output Characteristics** 

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-2.0<br>-1.6<br>-1.2  VGS = -10V<br>-9V<br>-0.8  -8V<br>-7V<br>-0.4  -6V<br>-5V<br>-4V<br>0<br>0                     -10                     -20                    -30                    -40<br>VDS (volts)<br>Transconductance vs. Drain Current<br>250<br>VDS = -25V<br>TA = -55 [O] C<br>200<br>TA = 25 [O] C<br>150  TA = 125 [O] C<br>100<br>50<br>0<br>0                -0.2              -0.4              -0.6              -0.8              -1.0<br>ID (amperes)<br>Maximum Rated Safe Operating Area<br>-10<br>-1.0<br>TO-92 (DC)<br>-0.1<br>TC = 25 [O] C<br>-0.01<br>-0.1                           -1.0                            -10                          -100<br>VDS (volts)<br> (amperes)<br>ID<br> (millisiemens)<br>FS<br>G<br> (amperes)<br>ID<br>**----- End of picture text -----**<br>


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Saturation Characteristics<br>**----- End of picture text -----**<br>


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-1.0<br>VGS = -10V<br>-9V<br>-0.8<br>-8V<br>-0.6<br>-7V<br>-0.4<br>-6V<br>-0.2<br>-5V<br>-4V<br>0<br>0                  -2                 -4                 -6                -8                -10<br>VDS (volts)<br> (amperes)<br>ID<br>**----- End of picture text -----**<br>


**Power Dissipation vs. Case Temperature** 

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2.0<br>TO-92<br>1.0<br>0<br>0              25            50             75            100           125          150<br>TC ( [O] C)<br>Thermal Response Characteristics<br>1.0<br>0.8<br>0.6<br>0.4<br>0.2  TO-92<br>PD = 1W<br>TC = 25 [O] C<br>0<br>0.001               0.01                   0.1                    1.0                    10<br>tP (seconds)<br> (watts)<br>D<br>P<br>Thermal Resistance (normalized)<br>**----- End of picture text -----**<br>


_**Supertex inc.**_ 

_Doc.# DSFP-VP0109 C082313_ 

_**www.supertex.com**_ 

4 

**VP0109** 

## **3-Lead TO-92 Package Outline (N3)** 

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D<br>A<br>Seating<br>Plane 1     2     3<br>L<br>b c<br>e1<br>e<br>**----- End of picture text -----**<br>


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Front View<br>**----- End of picture text -----**<br>


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Side View<br>**----- End of picture text -----**<br>


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E<br>E1<br>1 3<br>2<br>Bottom View<br>**----- End of picture text -----**<br>


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Symbol A b c D E E1 e e1 L<br>MIN .170 .014 [†] .014 [†] .175 .125 .080 .095 .045 .500<br>Dimensions<br>NOM - - - - - - - - -<br>(inches)<br>MAX .210 .022 [†] .022 [†] .205 .165 .105 .105 .055 .610*<br>**----- End of picture text -----**<br>


_JEDEC Registration TO-92._ 

- _This dimension is not specified in the JEDEC drawing._ 

_† This dimension differs from the JEDEC drawing._ 

_**Drawings not to scale.**_ 

_**Supertex Doc.#:** DSPD-3TO92N3, Version E041009._ 

_(The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline information go to http://www.supertex.com/packaging.html.)_ 

_**Supertex inc.**_ does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such applications unless it receives an adequate “product liability indemnification insurance agreement.” _**Supertex inc.**_ does not assume responsibility for use of devices described, and limits its liability to the replacement of the devices determined defective due to workmanship. No responsibility is assumed for possible omissions and inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications refer to the _**Supertex inc.**_ (website: http//www.supertex.com) 

> ©2013 _**Supertex inc.**_ All rights reserved. Unauthorized use or reproduction is prohibited. 

_**Supertex inc.**_ 1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 _**www.supertex.com**_ 

_Doc.# DSFP-VP0109 C082313_ 

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