VN2106N3-G

**VN2106** 

## **N-Channel Enhancement-Mode Vertical DMOS FETs** 

## **Features** 

- Free from secondary breakdown 

- Low power drive requirement 

- Ease of paralleling 

- Low CISS and fast switching speeds 

- High input impedance and high gain 

## **Applications** 

- Motor controls 

## **General Description** 

The Supertex VN2106 is an enhancement-mode (normallyoff) transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors, and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. 

- Converters 

- 

- Switches 

- Power supply circuits 

- Drivers (relays, hammers, solenoids, lamps, 

   - memories, displays, bipolar transistors, etc.) 

Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. 

## **Ordering Information** 

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||||
|---|---|---|
|Package Option|BV|/BV|
|Device|DSS|DGS|
|TO-92|(V)|
|VN2106|VN2106N3-G|60|
|a|

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**R DS(ON) (max) (Ω)** 4.0 

_-G indicates package is RoHS compliant (‘Green’)_ 

## **Absolute Maximum Ratings** 

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|||
|---|---|
|Parameter|Value|
|Drain-to-Source voltage|BVDSS|
|Drain-to-Gate voltage|BVDGS|
|Gate-to-Source voltage|±20V|
|Operating and storage temperature|-55°C to +150°C|
|Soldering temperature*|+300°C|

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_Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied. Continuous operation of the device at the absolute rating level may affect device reliability. All voltages are referenced to device ground._ 

_***** Distance of 1.6mm from case for 10 seconds._ 

## 

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DRAIN<br>SOURCE<br>GATE<br>TO-92 (N3)<br>**----- End of picture text -----**<br>


## **Product Marking** 

**SiVN** YY = Year Sealed **2 1 0 6** WW = Week Sealed **Y Y WW** = “Green” Packaging _Package may or may not include the following marks: Si or_ i) 

**TO-92 (N3)** 

●  1235 Bordeaux Drive, Sunnyvale, CA 94089  ●  Tel: 408-222-8888  ●  www.supertex.com 

**VN2106** 

|**Thermal Characteristics**|**Thermal Characteristics**|**Thermal Characteristics**|**Thermal Characteristics**|**Thermal Characteristics**|**Thermal Characteristics**|**Thermal Characteristics**|**Thermal Characteristics**|
|---|---|---|---|---|---|---|---|
|**Package**|**ID**<br>**(continuous)****_†_**<br>**(mA)**|**ID**<br>**(pulsed)**<br>**(A)**|**Power Dissipation**<br>**@TC = 25OC**<br>**(W)**|**_θjc_**<br>**(OC/W)**|**_θja_**<br>**(OC/W)**|**IDR**<br>**_†_**<br>**(mA)**|**IDRM**<br>**(A)**|
|TO-92|300|1.0|1.0|125|170|300|1.0|
|**_Notes:_**<br>_†     ID (continuous) is limited by max rated Tj ._||||||||



## **Electrical Characteristics** _(TA = 25°C unless otherwise specified)_ 

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Sym Parameter Min Typ Max Units Conditions<br>BVDSS Drain-to-source breakdown voltage 60 - - V VGS = 0V, ID = 1.0mA<br>VGS(th) Gate threshold voltage 0.8 - 2.4 V VGS = VDS, ID = 1.0mA<br>ΔVGS(th) Change in VGS(th) with temperature - -3.8 -5.5 mV/ [O] C VGS = VDS, ID = 1.0mA<br>IGSS Gate body leakage current - 0.1 100 nA VGS = ±20V, VDS = 0V<br>- - 1.0 VGS = 0V, VDS = Max Rating<br>IDSS Zero gate voltage drain current - - 100 µA VDS = 0.8 Max Rating,<br>VGS = 0V, TA = 125 [O] C<br>ID(ON) On-state drain current 0.6 - - A VGS = 10V, VDS = 25V<br>R Static drain-to-source on-state resistance - 4.5 6.0 Ω VGS = 5.0V, ID = 75mA<br>DS(ON) - 3.0 4.0 VGS = 10V, ID = 500mA<br>ΔRDS(ON) Change in RDS(ON) with temperature - 0.7 1.0 %/ [O] C VGS = 10V, ID = 500mA<br>GFS Forward transconductance 150 400 - mmho  VDS = 25V, ID = 500mA<br>CISS Input capacitance - 35 50 VGS = 0V,<br>COSS Common source output capacitance - 13 25 pF VDS = 25V,<br>CRSS Reverse transfer capacitance - 4.0 5.0 f = 1.0MHz<br>td(ON) Turn-on delay time - 3.0 5.0<br>t Rise time - 5.0 8.0 VDD = 25V,<br>td(OFF)r Turn-off delay time - 6.0 9.0 ns IRD = 600mA,GEN = 25Ω<br>t Fall time - 5.0 8.0<br>f<br>VSD Diode forward voltage drop - 1.2 1.8 V VGS = 0V, ISD = 600mA<br>trr Reverse recovery time - 400 - ns VGS = 0V, ISD = 600mA<br>**----- End of picture text -----**<br>


_**Notes:**_ 

_1. All D.C. parameters 100% tested at 25[O] C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)_ 

_2. All A.C. parameters sample tested._ 

## **Switching Waveforms and Test Circuit** 

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VDD<br>10V<br>90%<br>INPUT PULSE RL<br>     0V 10% GENERATOR OUTPUT<br>t(ON) t(OFF) RGEN<br>td(ON) tr td(OFF) tF<br>VDD 10% 10% D.U.T.<br>OUTPUT INPUT<br>0V 90% 90%<br>**----- End of picture text -----**<br>


●  1235 Bordeaux Drive, Sunnyvale, CA 94089  ●  Tel: 408-222-8888  ●  www.supertex.com 

2 

**VN2106** 

## **Typical Performance Curves** 

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Output Characteristics Saturation Characteristics<br>2.0 2.0<br>VGS = VGS =<br>10V<br>1.6 1.6 10V<br>9V<br>9V<br>1.2 1.2<br>8V 8V<br>0.8 0.8<br>7V 7V<br>6V<br>6V<br>0.4 0.4<br>5V 5V<br>4V<br>4V<br>0 3V 0 3V<br>0 10 20 30 40 50 0 2 4 6 8 10<br>VDS (volts) VDS (volts)<br>Transconductance vs. Drain Current Power Dissipation vs. Case Temperature<br>0.5 2.0<br>VDS = 25V<br>0.4<br> TA = -55°C<br>0.3<br>TO-92<br>25°C 1.0<br>0.2<br>125°C<br>0.1<br>0 0<br>0 0.2 0.4 0.6 0.8 1.0 0 25 50 75 100 125 150<br>ID (amperes) TC (°C)<br>Maximum Rated Safe Operating Area Thermal Response Characteristics<br>10<br>1.0<br>0.8<br>TO-92 (pulsed)<br>1.0<br>0.6<br>TO-92 (DC)<br>0.4<br>0.1<br>TO-92<br>0.2<br>PD = 1W<br>TA = 25°C<br>TA = 25°C<br>0.01 0<br>0.1 1 10 100 0.001 0.01 0.1 1.0 10<br>VDS (volts) tp (seconds)<br>)s )s<br>ere ere<br>p p<br>m m<br>(a (a<br>ID ID<br>)s<br>n<br>e )<br>m stt<br>(eis (aw<br>GSF PD<br>)d<br>e<br>zila<br>)s ronm<br>er ( e<br>e c<br>p n<br>m a<br>(a<br>ID tsisRe<br> la<br>mre<br>h<br>T<br>**----- End of picture text -----**<br>


●  1235 Bordeaux Drive, Sunnyvale, CA 94089  ●  Tel: 408-222-8888  ●  www.supertex.com 

3 

**VN2106** 

## **Typical Performance Curves** _**(cont.)**_ 

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BVDSS Variation with Temperature On-Resistance vs. Drain Current<br>1.1 10<br>VGS = 5V<br>8<br>VGS = 10V<br>6<br>1.0<br>4<br>2<br>0.9 0<br>-50 0 50 100 150 0 0.5 1.0 1.5 2.0 2.5<br>Tj (°C) ID (amperes)<br>Transfer Characteristics VGS(th) and RDS(ON) Variation with Temperature<br>2.0 2.0<br>VDS = 25V 1.4<br>RDS(ON) @ 10V, 0.5A<br>1.6 1.6<br>1.2<br>1.2 1.2<br>1.0<br>0.8 0.8<br>VGS(th) @ 1mA<br>0.8<br>0.4 0.4<br>0.6<br>0 0<br>0 2 4 6 8 10 -50 0 50 100 150<br>VGS (volts) Tj (°C)<br>Capacitance vs. Drain-to-Source Voltage Gate Drive Dynamic Characteristics<br>50 10<br>f = 1MHz<br>VDS = 10V<br>8<br>CISS 90 pF<br>6<br>25<br>4<br>2<br>30 pF VDS = 40V<br>CRSS<br>0 0<br>0 10 20 30 40 0 0.2 0.4 0.6 0.8 1.0<br>VDS (volts) QG (nanocoulombs)<br>COSS<br>TA = -55°C<br>25°C<br>125°C<br>)d<br>e )s<br>zila m<br>(mronSSD (ho)(SOND<br>V R<br>B<br>)<br>) d<br>d e<br>)serep zilaemr zilamor<br>am (on (n)<br>( ID )t(Sh O(SN<br>G D<br>V R<br>)ds )<br>ra<br>fa stlov<br>o (<br>S<br>cip G<br>(  V<br>C<br>**----- End of picture text -----**<br>


●  1235 Bordeaux Drive, Sunnyvale, CA 94089  ●  Tel: 408-222-8888  ●  www.supertex.com 

4 

**VN2106** 

## **3-Lead TO-92 Package Outline (N3)** 

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D<br>A<br>Seating Plane 1   2   3<br>L<br>b<br>c<br>e1<br>e<br>Front View Side View<br>E<br>E1<br>1 3<br>2<br>**----- End of picture text -----**<br>


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Bottom View<br>**----- End of picture text -----**<br>


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Symbol A b c D E E1 e e1 L<br>MIN .170 .014 [†] .014 [†] .175 .125 .080 .095 .045 .500<br>Dimensions<br>NOM - - - - - - - - -<br>(inches)<br>MAX .210 .022 [†] .022 [†] .205 .165 .105 .105 .055 .610*<br>**----- End of picture text -----**<br>


_JEDEC Registration TO-92._ 

- _This dimension is a non-JEDEC dimension._ 

_**Drawings not to scale.**_ 

_**Supertex Doc.#:** DSPD-3TO92N3, Version D080408._ 

_information go to http://www.supertex.com/packaging.html.)_ 

**Supertex inc.** does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such applications unless it receives an adequate “product liability indemnification insurance agreement.” **Supertex inc.** does not assume responsibility for use of devices described, and limits its liability to the replacement of the devices determined defective due to workmanship. No responsibility is assumed for possible omissions and inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications refer to the **Supertex inc.** website: http//www.supertex.com. 

- ©2008 All rights reserved. Unauthorized use or reproduction is prohibited. 

1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 _**www.supertex.com**_ 

_Doc.# DSFP-VN2106 A122308_ 

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