VN10K

## N-CHANNEL ENHANCEMENT MODE MOSFET 

## VN10K 

- Low RDS(on), VGS(th), CISS And Fast Switching Speeds 

- Hermetic TO-18 Metal package. 

- Ideally Suited For Power Supply Circuits, Switching And Driver (Relay, Solenoid, Lamp etc..) Applications 

- Screening Options Available 

## ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) 

|VDS<br>VGS<br>ID<br>IDM<br>PD<br>TJ<br>Tstg|Drain – Source Voltage<br>Gate – Source Voltage<br>Continuous Drain Current<br>TA = 25°C<br>TA = 100°C<br>Pulsed Drain Current<br>(1)<br>Total Power Dissipation at<br>TA = 25°C<br>Derate Above 25°C<br>Operating Temperature Range<br>Storage Temperature Range|60V<br>+15V, -0.3V<br>0.17A<br>0.11A<br>1.0A<br>312.5mW<br>2.5mW/°C<br>-55 to +150°C<br>-55 to +150°C|
|---|---|---|



## THERMAL PROPERTIES 

|Symbols|Parameters|Min.|Typ.<br>Max.|Units|
|---|---|---|---|---|
|RθJA|Thermal Resistance, Junction To Ambient||400|°C/W|



## **Notes** 

- (1) Repetitive Rating: Pulse width limited by maximum junction temperature 

Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. 

**Semelab Limited** Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com 

Document Number 8876 Issue 1 Page  1 of 3 

## N-CHANNEL ENHANCEMENT MODE MOSFET VN10K 

**==> picture [141 x 46] intentionally omitted <==**

## ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated) 

|Symbols|Parameters|Test Conditions|Test Conditions|Min.|Typ.|Max.|Units|
|---|---|---|---|---|---|---|---|
|BVDSS|Drain-Source Breakdown<br>Voltage|VGS = 0|ID = 100µA|60|||V|
|VGS(th)|Gate Threshold Voltage|VDS = VGS|ID = 1.0mA|0.8||2.5|V|
|IGSS|Gate-Source Leakage Current|VGS = 15V|VDS = 0V|||100|nA|
|IDSS|Zero Gate Voltage<br>Drain Current|VDS = 48V|VGS = 0|||10<br>500|µA|
||||TJ = 125°C|||||
|ID(ON)<br>(2)|On-State Drain Current|VDS = 10V|VGS = 10V|0.75|||A|
|RDS(on)<br>(2)|Static Drain-Source<br>On-State Resistance|VGS = 5V|ID = 0.2A|||7.5<br>5<br>9|Ω|
|||VGS = 10V|ID = 0.5A|||||
||||TJ = 125°C|||||
|gfs<br>(2)|Forward Transconductance|VDS = 10V|ID = 0.5A|100|||mƱ|
|gos<br>(2)|Common Source<br>Output Conductance|VDS = 7.5V|ID = 50mA||0.2|||



## DYNAMIC CHARACTERISTICS 

|Ciss|Input Capacitance|VGS = 0<br>VDS = 25V<br>f = 1.0MHz|||60<br>25<br>5|pF|
|---|---|---|---|---|---|---|
|Coss|Output Capacitance||||||
|Crss|Reverse Transfer Capacitance||||||
|td(on)|Turn-On Delay Time|VDD = 15V, RL= 23Ω,RG = 50Ω<br>ID = 1.0A, VGEN = 10V|||10<br>10|ns|
|td(off)|Turn-Off Delay Time||||||



## **Notes** 

(2) Pulse Width ≤ 300us, δ ≤ 2% 

**Semelab Limited** Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: 

Document Number 8876 Issue 1 Page 2 of 3 

Email: sales@semelab-tt.com 

Website: http://www.semelab-tt.com 

## N-CHANNEL ENHANCEMENT MODE MOSFET VN10K 

**==> picture [141 x 46] intentionally omitted <==**

## MECHANICAL DATA 

Dimensions in mm (inches) 

**==> picture [139 x 283] intentionally omitted <==**

**----- Start of picture text -----**<br>
5.84 (0.230)<br>5.31 (0.209)<br>4.95 (0.195)<br>4.52 (0.178)<br>0.48 (0.019)<br>0.41 (0.016)<br>dia.<br>2.54 (0.100)<br>Nom.<br>3 1<br>2<br>5.33 (0.210) 4.32 (0.170)<br>min.<br>12.7 (0.500)<br>**----- End of picture text -----**<br>


## TO-18 (TO-206AA) METAL PACKAGE Underside View 

Pin 1 - Source Pin 2 - Gate Pin 3 – Case & Drain 

**Semelab Limited** Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: 

Document Number 8876 Issue 1 Page 3 of 3 

Email: sales@semelab-tt.com 

Website: http://www.semelab-tt.com