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VBO30-16NO7
Bridge Rectifier, Single Phase, 1.6 kV, 25 A, PWS-A, 4 Pins, 1.25 V
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- Manufacturer: IXYS SEMICONDUCTOR
- Product type: Bridge Rectifier Diodes
- No. of Pins: 4Pins
- No. of Phases: Single Phase
- Forward Voltage Max: 1.25V
- Average Forward Current: 25A
- Bridge Rectifier Mounting: Panel Mount
- Operating Temperature Max: 150°C
- Bridge Rectifier Case Style: PWS-A
- Repetitive Peak Reverse Voltage: 1.6kV
| Delivery and price | |
|---|---|
| Units per pack | 50 |
| Price | 18.55 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## **VBO30-16NO7** ## **Standard Rectifier Module** ||**3~**<br>**1~**|| |---|---|---| ||**Rectifier**|| |RRM<br>1600<br>V<br>=||V| |I|25<br>DAV<br>=|A| |I|FSM<br>400<br>=|A| ## 1~ Rectifier Bridge ## **Part number** VBO30-16NO7 **==> picture [159 x 6] intentionally omitted <==** **----- Start of picture text -----**<br> - ~ ~ +<br>**----- End of picture text -----**<br> ## **Features / Advantages:** - Package with DCB ceramic - Improved temperature and power cycling - Planar passivated chips - Very low forward voltage drop - Very low leakage current ## **Applications:** - Diode for main rectification - For one phase bridge configurations - Supplies for DC power equipment - Input rectifiers for PWM inverter - Battery DC power supplies - Field supply for DC motors ## PWS-A ## **Package:** - Industry standard outline - RoHS compliant - Easy to mount with two screws - Base plate: Aluminium internally DCB isolated - Advanced power cycling IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20130606d © 2013 IXYS all rights reserved **VBO30-16NO7** |Ratings<br>**Rectifier**|Ratings<br>**Rectifier**|Ratings<br>**Rectifier**|Ratings<br>**Rectifier**|Ratings<br>**Rectifier**|Ratings<br>**Rectifier**| |---|---|---|---|---|---| |Symbol<br>Definition<br>Conditions||min.|typ.|max.|Unit| |VRSM<br>_max. non-repetitive reverse blocking voltage_<br>T = 25°C<br>VJ||||1700|V| |VRRM<br>_max. repetitive reverse blocking voltage_<br>T = 25°C<br>VJ||||1600|V| |IR<br>_reverse current_|V = V<br>R<br>T = 25°C<br>VJ<br>T = °C<br>VJ<br>V = V<br>R<br>1600<br>150<br>1600|||40<br>1.5|mA<br>µA| |V F<br>_forward voltage drop_|T = 25°C<br>VJ<br>I = A<br>F<br>15<br>I = A<br>F<br>30|||1.10<br>1.25|V<br>V| ||T = °C<br>VJ<br>I = A<br>F<br>15<br>I = A<br>F<br>30<br>125|||1.01<br>1.21|V<br>V| |I<br>DAV<br>_bridge output current_|T = °C<br>C<br>85<br>T = °C<br>VJ<br>150<br>d =<br>rectangular<br>0.5|||25|A| |VF0<br>T = °C<br>VJ<br>150<br>r F<br>_threshold voltage_<br>_slope resistance_<br>_for power loss calculation only_||||0.80<br>12.9|V<br>mΩ| |R<br>_thermal resistance junction to case_<br>thJC||||4.2|K/W| |R<br>_thermal resistance case to heatsink_<br>thCH|||0.6||K/W| |Ptot<br>_total power dissipation_|T = 25°C<br>C|||29|W| |IFSM<br>_max. forward surge current_|t = 10 ms; (50 Hz), sine<br>T = 45°C<br>VJ<br>V = 0 V<br>R<br>t = 8,3 ms; (60 Hz), sine|||400<br>430|A<br>A| ||T = °C<br>VJ<br>150<br>V = 0 V<br>R<br>t = 10 ms; (50 Hz), sine<br>t = 8,3 ms; (60 Hz), sine|||340<br>365|A<br>A| |I²t<br>_value for fusing_|T = 45°C<br>V = 0 V<br>t = 10 ms; (50 Hz), sine<br>t = 8,3 ms; (60 Hz), sine<br>VJ<br>R|||800<br>770|A²s<br>A²s| ||T = °C<br>150<br>V = 0 V<br>t = 10 ms; (50 Hz), sine<br>t = 8,3 ms; (60 Hz), sine<br>VJ<br>R|||580<br>555|A²s<br>A²s| |CJ<br>_junction capacitance_|V = V;<br>400<br>T = 25°C<br>f = 1 MHz<br>R<br>VJ||10||pF| **==> picture [308 x 253] intentionally omitted <==** IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20130606d © 2013 IXYS all rights reserved **VBO30-16NO7** |Symbol<br>Definition<br>Conditions|min.|typ.|max.|Unit| |---|---|---|---|---| |I RMS<br>_RMS current_<br>per terminal|~~=~~|~~=~~|100|A| |Tstg<br>_storage temperature_|-40<br>~~=~~<br>~~oT~~|~~=~~<br>~~oT~~|125<br>~~oT~~|°C| |TVJ<br>_virtual junction temperature_|-40<br>~~oT~~<br>~~=~~|~~oT~~<br>~~=~~|150<br>~~oT~~|°C| |Weight|~~=~~|104<br>~~=~~||g| |M D<br>_mounting torque_<br>M T<br>_terminal torque_|1.25<br>1.25<br>~~=~~<br>~~|~~|~~=~~<br>~~|~~|1.75<br>1.75|Nm<br>Nm| |d Spp/App<br>_creepage distance on surface | striking distance through air_<br>d Spb/Apb<br>_terminal to backside_<br>_terminal to terminal_|6.5<br>8.5<br>~~|~~<br>~~|~~|~~|~~<br>~~|~~||mm<br>mm| |V<br>t = 1 second<br>t = 1 minute<br>_isolation voltage_<br>50/60 Hz, RMS; I ≤ 1 mA<br>ISOL<br>ISOL|2500<br>3000<br>~~|~~|~~|~~||V<br>V| Circuit Made in Germany Diagram Product XXXX-XXXX[YYCW Lot#] Number ~~r~~ T Date Code Ordering Part Number Marking on Product Delivery Mode Quantity Code No. ~~ee~~ Standard VBO30-16NO7 VBO30-16NO7 Box 20 470627 e **Equivalent Circuits for Simulation** ee _* on die level_ T =VJ 150 °C I V0 ~~R~~ 0 Rectifier ~~Oo~~ V 0 max _threshold voltage_ 0.8 V R0 max _slope resistance *_ 11.7 mΩ IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20130606d © 2013 IXYS all rights reserved **VBO30-16NO7** ## **Outlines PWS-A** **==> picture [509 x 483] intentionally omitted <==** **----- Start of picture text -----**<br> 7<br>M4<br>8<br>9<br>27<br>4.8<br>45<br>55<br>9<br>4.3 ~<br>45 27 10<br>~<br>9<br>1.1<br>24 22<br>5<br>**----- End of picture text -----**<br> **==> picture [483 x 168] intentionally omitted <==** **----- Start of picture text -----**<br> - ~ ~ +<br>**----- End of picture text -----**<br> IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20130606d © 2013 IXYS all rights reserved **VBO30-16NO7** ## **Rectifier** **==> picture [469 x 400] intentionally omitted <==** **----- Start of picture text -----**<br> 60 350 800<br>50 Hz0.8 x V RRM VR = 0 V<br>50<br>300<br>600<br>40<br>30 250 TVJ = 45°C TVJ = 45°C<br>400<br>TVJ = 150°C<br>20 TVJ = 150°C<br>T VJ = 200<br>10 125 ° C<br>150°C 200<br>TVJ = 25°C<br>0 150<br>0.4 0.6 0.8 1.0 1.2 1.4 1.6 10 [-3] 10 [-2] 10 [-1] 10 [0] 1 10<br>Fig. 1 Forward current vs. Fig. 2 Surge overload current Fig. 3 I [2] t vs. time per diode<br>voltage drop per diode vs. time per diode<br>16 32<br>RthJA:thJA::<br>DC = 0.6 KW 28 DC ==<br>1<br>0.8 KW 1<br>0.5<br>12 0.4 1 KW 24 0.5<br>0.33 2 KW 0.4<br>0.17 4 KW 20 0.33<br>0.08<br>8 8 KW 16 0.17<br>0.08<br>12<br>4 8<br>4<br>0 0<br>0 4 8 12 0 25 50 75 100 125 150 175 0 25 50 75 100 125 150<br>**----- End of picture text -----**<br> **==> picture [452 x 395] intentionally omitted <==** **----- Start of picture text -----**<br> 16 32<br>RthJA:thJA::<br>DC = 0.6 KW 28 DC ==<br>1<br>0.8 KW 1<br>0.5<br>12 0.4 1 KW 24 0.5<br>0.33 2 KW 0.4<br>0.17 4 KW 20 0.33<br>0.08<br>8 8 KW 16 0.17<br>0.08<br>12<br>4 8<br>4<br>0 0<br>0 4 8 12 0 25 50 75 100 125 150 175 0 25 50 75 100 125<br>Fig. 4 Power dissipation vs. forward current Fig. 5 Max. forward current vs.<br>and ambient temperature per diode<br>5<br>4<br>3 Constants for ZthJC calculation:<br>2 i Rth (K/W) ti (s)<br>1 0.194 0.024<br>2 0.556 0.070<br>1<br>3 0.450 3.250<br>4 3.000 9.300<br>0<br>1 10 100 1000 10000 100000<br>**----- End of picture text -----**<br> Fig. 5 Max. forward current vs. case temperature per diode Fig. 6 Transient thermal impedance junction to case vs. time per diode IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20130606d © 2013 IXYS all rights reserved
Updated at February 9, 2023
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