VBO125-12NO7

**VBO 125** 

## **Single Phase Rectifier Bridge** 

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|I|=|124 A|
|Single Phase|dAVM|
|VRRM|=|1200-1800 V|
|Rectifier Bridge|
|-|
|ee|VRSM|VRRM|Type|+|=|+|
|V|V|~|
|~~|
|900|800|VBO 125-08NO7|
|1200|1200|VBO 125-12NO7|
|a|1400|1400|VBO 125-14NO7|–|||&|
|1600|1600|VBO 125-16NO7|.|Al|
|1800|1800|VBO 125-18NO7|~|
|Symbol|Conditions|Maximum Ratings|Features|
|IdAVM|TC = 85°C, module|124|A|• Package with screw terminals|
|• Isolation voltage 3000 V~|
|IFSM|TVJ = 45°C;|t = 10 ms|(50 Hz), sine|1800|A|• Planar passivated chips|
|VR = 0|t = 8.3 ms|(60 Hz), sine|1950|A|• Blocking voltage up to 1800 V|
|TVVJR = 0 = TVJM|t = 10 mst = 8.3 ms|(60 Hz), sine(50 Hz), sine|16001800|AA|• Low forward voltage drop• UL registered E 72873|
|I|[2]|t|TVJ = 45°C|t = 10 ms|(50 Hz), sine|16200|A|[2]|s|Applications|
|VR = 0|t = 8.3 ms|(60 Hz), sine|16000|A|[2]|s|
|• Supplies for DC power equipment|
|VTVJR = 0 = TVJM|t = 10 mst = 8.3 ms|(60 Hz), sine(50 Hz), sine|1360012800|AA|[2][2]|ss|• Input rectifiers for PWM inverter• Battery DC power supplies|
|• Field supply for DC motors|
|TVJ|-40...+150|°C|
|TVJM|150|°C|Advantages|
|Tstg|-40...+150|°C|• Easy to mount with two screws|
|VISOL|50/60 Hz, RMS|t = 1 min|2500|V~|• Space and weight savings|
|IISOL|≤ 1 mA|t = 1 s|3000|V~|• Improved temperature and power cycling|
|Md|Mounting torque (M5)|5|±15%|Nm|
|44|±15%|lb.in.|Dimensions in mm (1 mm = 0.0394")|
|Terminal connection torque (M5)|5|±15%|Nm|
|44|±15%|lb.in.|
|a|m|_,Mexi0|
|Weight|typ.|225|g|
|Symbol|Conditions|Characteristic Values|
|TN|
|IR|VR = VRRM;|TVJ = 25°C|≤|0.3|mA|
|VR = VRRM;|TVJ = TVJM|≤|8.0|mA|
|eee|4|40|
|VF|IF = 150 A;|TVJ = 25°C|≤|1.3|V|
|VT0|For power-loss calculations only|0.8|V|
|rT|TVJ = TVJM|3|mΩ|
|ee|®|||
|RthJC|per diode; 180°|0.83|K/W|ge:|3|1G}|Ke)|
|per module; 180°|0.138|K/W|ite|2|
|RthJK|per diode; 180°|1.13|K/W|
|per module; 180°|0.188|K/W|
|ee|LO|+B]|
|9|el|
|Data according to IEC 60747 refer to a single diode unless otherwise stated.|

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- Improved temperature and power cycling 

## **Dimensions in mm (1 mm = 0.0394")** 

IXYS reserves the right to change limits, test conditions and dimensions. 

© 2003 IXYS All rights reserved 

1 - 2 

**VBO 125** 

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200 I      F(OV)------I      FSM         I    (A)            FSM          10 25<br>A TVJ=45°C   TVJ=150°C As<br>160 1.6 1800      1600<br>T=150°C 1.4<br>120<br>TVJ=45°C<br>1.2 4<br>10<br>80 1 TVJ=150°C<br>0 V      RRM<br>0.8<br>40 1/2 V        RRM<br>IF T=25°C 0.6 1 V      RRM<br>3<br>0 0.4 10<br>VF 1 1.5 V   010    110  t[ms]   210    310  1 2 t [ms]4 6 10<br>Fig. 1 Forward current versus Fig. 2 Surge overload current per diode Fig. 3 ∫ii [[2]] dt versus time<br>voltage drop per diode IFSM: Crest value. t: duration<br>300 TC 150<br>[W] PSB 125 85 DC<br>0.19 0.11 = RTHCA [K/W] 90 [A] sin.180°<br>250 0.28 95 rec.120°rec.60°<br>100 100 rec.30°<br>200 105<br>0.44<br>110<br>150 115<br>120 50<br>0.77<br>125<br>100<br>DC 130<br>sin.180° 1.77 135 I    dAV<br>50 rec.120° 140 0 50 100 150 200<br>rec.60°<br>PVTOT rec.30° 145°C T (°C) C<br>0 150<br>50 100 0 50 100 150<br>IFAVM [A] Tamb [K]<br>**----- End of picture text -----**<br>


Fig. 3 ∫ii[[2]] dt versus time (1-10ms) per diode or thyristor 

Fig.5 Maximum forward current at case temperature 

Fig. 4 Power dissipation versus direct output current and ambient temperature 

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1.5<br>K/W<br>Z thJK<br>1 Z thJC<br>0.5<br>Zth<br>0.01 0.1 1 10<br>t[s]<br>**----- End of picture text -----**<br>


Fig. 6 Transient thermal impedance per diode or thyristor, calculated 

© 2003 IXYS All rights reserved 2 - 2 

IXYS reserves the right to change limits, test conditions and dimensions.