VB60170G-E3/4W

**VB60170G-E3** 

www.vishay.com 

Vishay General Semiconductor 

## **Dual High Voltage Trench MOS Barrier Schottky Rectifier** 

Ultra Low VF = 0.50 V at IF = 5 A 

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TMBS ®<br>D [2] PAK (TO-263AB)<br>K<br>2<br>1<br>VB60170G<br>PIN 1 K<br>PIN 2 aa , HEATSINK<br>C2 click logo to get started<br>**----- End of picture text -----**<br>


## **DESIGN SUPPORT TOOLS** 

Models Available 

## **PRIMARY CHARACTERISTICS** 

|**PRIMARY CHARACTERISTICS**|**PRIMARY CHARACTERISTICS**|
|---|---|
|IF(AV)|2 x 30 A|
|VRRM|170 V|
|IFSM|210 A|
|VFat IF= 30 A|0.72 V|
|TJmax.|175 °C|
|Package|D2PAK (TO-263AB)|
|Circuit configuration|Common cathode|



## **FEATURES** 

- Trench MOS Schottky technology 

- Low forward voltage drop, low power losses 

- High efficiency operation 

- Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C 

- Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 

## **TYPICAL APPLICATIONS** 

For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection. 

## **MECHANICAL DATA** 

**Case:** D[2] PAK (TO-263AB) 

Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade 

**Terminals:** matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 

E3 suffix meets JESD 201 class 1A whisker test 

**Polarity:** as marked 

**Mounting Torque:** 10 in-lbs maximum 

## **MAXIMUM RATINGS** (TA = 25 °C unless otherwise noted) 

|**PARAMETER**|**SYMBOL**|**VB60170G**<br>**UNIT**|
|---|---|---|
|Maximum repetitive peak reverse voltage|VRRM|170<br>V|
|Maximum average forward rectified current<br>(fig. 1)<br>per device<br>per diode|IF(AV)|60<br>A<br>30|
|Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load|IFSM|210<br>A|
|Voltage rate of change (rated VR)|dV/dt|10 000<br>V/μs|
|Operatingjunction and storage temperature range|TJ, TSTG|-40 to +175<br>°C|
||||
|**ELECTRICAL CHARACTERISTICS**(TA= 25 °C unless otherwise noted)<br>~~Ce~~|||
|**Notes**<br>**PARAMETER**<br>**TEST CONDITIONS**<br>Instantaneous forward voltage per diode<br>IF= 5 A<br>TA= 25 °C<br>IF= 15 A<br>IF= 30 A<br>IF= 5 A<br>TA= 125 °C<br>IF= 15 A<br>IF= 30 A<br>Reverse current per diode<br>VR= 136 V<br>TA= 25 °C<br>TA= 125 °C<br>VR= 170 V<br>TA= 25 °C<br>TA= 125 °C<br>~~a~~<br>~~—l~~<br>~~__~~<br>~~__~~<br>~~——~~<br>~~_~~<br>~~_~~<br>~~SSS ~~<br>~~i~~<br>~~eee ~~|**SYMBOL**<br>**TYP.**<br>**MAX.**<br>**UNIT**<br>VF (1)<br>0.65<br>-<br>V<br>0.78<br>-<br>0.87<br>1.02<br>0.50<br>-<br>0.62<br>-<br>0.72<br>0.80<br>IR (2)<br>1.5<br>-<br>μA<br>2.5<br>-<br>mA<br>-<br>450<br>μA<br>5<br>50<br>mA<br>~~**e**e~~<br>~~e~~<br>~~ee~~<br>~~**e**e~~<br>~~e~~<br>~~es~~<br> ~~SS~~<br> ~~a~~||
|(1) Pulse test: 300 μs pulse width, 1 % duty cycle|||



- (2) Pulse test: Pulse width  20 ms 

Revision: 20-Jun-2018 

Document Number: 89950 

**1** For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**VB60170G-E3** 

Vishay General Semiconductor 

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www.vishay.com 

|**THERMAL CHARACTERISTICS**(TA= 25 °C unless otherwise noted)|**THERMAL CHARACTERISTICS**(TA= 25 °C unless otherwise noted)|**THERMAL CHARACTERISTICS**(TA= 25 °C unless otherwise noted)|**THERMAL CHARACTERISTICS**(TA= 25 °C unless otherwise noted)|**THERMAL CHARACTERISTICS**(TA= 25 °C unless otherwise noted)|
|---|---|---|---|---|
|**PARAMETER**||**SYMBOL**|**VB60170G**|**UNIT**|
|Typical thermal resistance|per diode|RJC|1.0|°C/W|
||per device||0.7||



## **ORDERING INFORMATION** (Example) 

|**ORDERING INFORMATION**(Example)|**ORDERING INFORMATION**(Example)|**ORDERING INFORMATION**(Example)|**ORDERING INFORMATION**(Example)|**ORDERING INFORMATION**(Example)|**ORDERING INFORMATION**(Example)|
|---|---|---|---|---|---|
|**PACKAGE**|**PREFERRED P/N**|**UNIT WEIGHT (g)**|**PACKAGE CODE**|**BASE QUANTITY**|**DELIVERY MODE**|
|TO-263AB|VB60170G-E3/4W|1.38|4W|50/tube|Tube|
|TO-263AB|VB60170G-E3/8W|1.38|8W|800/reel|Tape and reel|



## **RATINGS AND CHARACTERISTICS CURVES** (TA = 25 °C unless otherwise noted) 

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40<br>35<br>30<br>25<br>20<br>15<br>10<br>5<br>0<br>0 25 50 75 100 125 150 175<br>Case Temperature (°C)<br>Average Forward Rectified Current (A)<br>**----- End of picture text -----**<br>


Fig. 1 - Maximum Forward Current Derating Curve 

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100<br>TA = 175 °C<br>TA = 150 °C<br>10<br>TA = 125 °C<br>TA = 100 °C<br>1<br>TA = 25 °C<br>0.1<br>0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0<br>Instantaneous Forward Voltage (V)<br>Instantaneous Forward Current (A)<br>**----- End of picture text -----**<br>


Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode 

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30.0<br>D = 0.8<br>D = 0.5<br>25.0 D = 0.3<br>D = 0.2<br>20.0 D = 0.1 D = 1.0<br>15.0<br>10.0 T<br>5.0<br>D = tp/T tp<br>0.0<br>0 5 10 15 20 25 30 35<br>Average Forward Current (A)<br>Average Power Loss (W)<br>**----- End of picture text -----**<br>


Fig. 2 - Forward Power Loss Characteristics Per Diode 

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100<br>TA = 175 °C<br>10 TA = 150 °C<br>TA = 125 °C<br>1<br>TA = 100 °C<br>0.1<br>0.01<br>TA = 25 °C<br>0.001<br>0.0001<br>20 40 60 80 100<br>Percent of Rated Peak Reverse Voltage (%)<br>Instantaneous Reverse Current (mA)<br>**----- End of picture text -----**<br>


Fig. 4 - Typical Reverse Characteristics Per Diode 

Revision: 20-Jun-2018 

Document Number: 89950 

**2** 

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**VB60170G-E3** 

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www.vishay.com 

## Vishay General Semiconductor 

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10 000<br>TJ = 25 °C<br>f = 1.0 MHz<br>Vsig = 50 mVp-p<br>1000<br>100<br>10<br>0.1 1 10 100<br>Reverse Voltage (V)<br>Junction Capacitance (pF)<br>**----- End of picture text -----**<br>


Fig. 5 - Typical Junction Capacitance Per Diode 

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10<br>Junction to Case<br>1<br>0.1<br>0.01 0.1 1 10 100<br>t - Pulse Duration (s)<br>C/W)<br>°<br>Transient Thermal Impedance (<br>**----- End of picture text -----**<br>


Fig. 6 - Typical Transient Thermal Impedance Per Diode 

## **PACKAGE OUTLINE DIMENSIONS** in inches (millimeters) 

## **D[2] PAK (TO-263AB)** 

## **Mounting Pad Layout** 

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0.411 (10.45) 0.190 (4.83)<br>0.42 (10.66) min.<br>0.380 (9.65) 0.160 (4.06) 0.055 (1.40)<br>0.245 (6.22) 0.045 (1.14)<br>MIN.<br>K<br>0.33 (8.38) min.<br>0.055 (1.40)<br>0.360 (9.14)<br>0.047 (1.19)<br>0.320 (8.13) 0.624 (15.85) 0.670 (17.02)<br>1 K 2 0.591 (15.00) 0.591 (15.00)<br>0 to 0.01 (0 to 0.254)<br>0.110 (2.79)<br>0.15 (3.81) min.<br>0.090 (2.29)<br>0.037 (0.940)<br>0.021 (0.53)<br>0.027 (0.686)<br>0.08 (2.032) MIN.<br>0.014 (0.36)<br>0.105 (2.67)<br>0.140 (3.56)<br>0.095 (2.41)<br>0.205 (5.20) 0.110 (2.79) 0.105 (2.67)<br>0.195 (4.95) 0.095 (2.41)<br>**----- End of picture text -----**<br>


Revision: 20-Jun-2018 

Document Number: 89950 

**3** 

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**Legal Disclaimer Notice** Vishay 

www.vishay.com 

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Revision: 08-Feb-17 

Document Number: 91000 

**1**