![V2F118A400Y2EDP — TVS Varistor, 13 V, 18 V, TransFeed, 42 V, 0805 [2012 Metric], Multilayer Varistor (MLV)](/media/7/2/8/8ED71063D6E90827.webp)
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V2F118A400Y2EDP
TVS Varistor, 13 V, 18 V, TransFeed, 42 V, 0805 [2012 Metric], Multilayer Varistor (MLV)
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- Manufacturer: KYOCERA AVX
- Product type: TVS Varistors
- SVHC: No SVHC (17-Dec-2015)
- Product Range: TransFeed
- Varistor Type: Multilayer Varistor (MLV)
- Voltage Rating VAC: 13V
- Voltage Rating VDC: 18V
- Varistor Case Style: 0805 [2012 Metric]
- Clamping Voltage Vc Max: 42V
- Peak Energy (10/1000uS): 100mJ
- Operating Temperature Max: 125°C
- Operating Temperature Min: -55°C
- Peak Surge Current @ 8/20µs: 30A
- Automotive Qualification Standard: -
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 0.258 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## **TransFeed AVX Multilayer Ceramic Transient Voltage Suppressors TVS Protection and EMI Attenuation in a Single Chip** ## **GENERAL DESCRIPTION** AVX has combined the best electrical characteristics of its TransGuard[®] Transient Voltage Suppressors (TVS) and its Feedthru Capacitors into a single chip for state-of-the-art overvoltage circuit protection and EMI reduction over a broad range of frequencies. This unique combination of multilayer ceramic construction in a feedthru configuration gives the circuit designer a single 0805 chip that responds to transient events faster than any TVS device on the market today, and provides significant EMI attenuation when in the off-state. The reduction in parallel inductance, typical of the feedthru chip construction when compared to the construction of standard TVS or ceramic capacitor chips, gives the TransFeed product two very important electrical advantages: (1) faster “turn-on” time. Calculated response times of <200 pSec are not unusual with this device, and measured response times range from 200 – 250 pSec. The TransFeed “turn-on” characteristic is less than half that of an equivalent TransGuard[®] part — and TransGuards[®] clamp transient voltages faster than any other bipolar TVS solution such as diodes; (2) the second electrical advantage of lower parallel inductance, coupled with optimal series inductance, is the enhanced attenuation characteristics of **==> picture [201 x 163] intentionally omitted <==** **----- Start of picture text -----**<br> Schematic Diagram<br>IN OUT<br>Electrical Model<br>IN LS LS OUT<br>RV C RP<br>RON<br>LP<br>a ee<br>**----- End of picture text -----**<br> the TransFeed product. Not only is there significantly greater attenuation at a higher self-resonance frequency, but the roll-off characteristic becomes much flatter, resulting in EMI filtering over a much broader frequency spectrum. Typical applications include filtering/protection on Microcontroller I/O Lines, Interface I/O Lines, Power Line Conditioning and Power Regulation. ## **GENERAL CHARACTERISTICS** - Operating Teperature: - -55°C to +125°C - Working Voltage: 5.6Vdc - 26 Vdc - Case Size: 0805 - Energy Rating: 0.05 - 0.3J - Current: 20 - 120A - Max Feedthru Current: 0.5 - 1A ## **TYPICAL APPLICATIONS** - Fingerprint ID Circuit - Magnetic Field Circuit - LCD Dashboard Driver Where designers are concerned with both transient voltage protection and EMI attenuation, either due to the electrical performance of their circuits or due to required compliance to specific EMC regulations, the TransFeed product is an ideal choice. ## **APPLICATIONS** - Bi-directional TVS - Narrow band, high attenuation filter - EMI Filtering over broader frequency range - Fastest Response Time to ESD Strikes 83 080216 ## **TransFeed AVX Multilayer Ceramic Transient Voltage Suppressors TVS Protection and EMI Attenuation in a Single Chip** ## **HOW TO ORDER** **==> picture [518 x 144] intentionally omitted <==** **----- Start of picture text -----**<br> V 2 F 1 05 A 150 Y 2 E D P<br>Varistor Feedthru Voltage Varistor DC Packaging<br>Capacitor 05 = 5.6VDC Clamping Resistance Code<br>09 = 9.0VDC Voltage 1 = 0.150 Ohms Pcs./Reel<br>14 = 14.0VDC 150 = 18V 2 = 0.200 Ohms D = 1,000<br>18 = 18.0VDC 200 = 22V 3 = 0.250 Ohms R = 4,000<br>26 = 26.0VDC 300 = 32V T = 10,000<br>400 = 42V<br>500 = 50V<br>Chip Size No. of Energy 600 = 60V Capaci tance Feedthru Termination Finish<br>2 = 0805 Elements Rating Tolerance Current P = Ni/Sn (Plated)<br>X = 0.05J Y = +100/-50% D = 500 mA<br>A = 0.1J E = 750 mA<br>C = 0.3J F = 1.0 Amp<br>**----- End of picture text -----**<br> ## **TRANSFEED ELECTRICAL SPECIFICATIONS** |**AVX**<br>**Part Number**|**AVX**<br>**Part Number**|**Working**<br>**Voltage**<br>**(DC)**|**Working**<br>**Voltage**<br>**(AC)**|**Breakdown **<br>**Voltage**|**Clamping **<br>**Voltage**|**Maximum**<br>**Leakage**<br>**Current**|**Transient**<br>**Energy**<br>**Rating**|**Peak**<br>**Current**<br>**Rating**|**Typical**<br>**Cap**|**DC**<br>**Resistance**|**Maximum**<br>**Feedthru**<br>**Current**| |---|---|---|---|---|---|---|---|---|---|---|---| |V2F105A150Y2E _ _||5.6|4.0|8.5±20%|18|35|0.10|30|800|0.200|0.75| |V2F105C150Y1F _ _||5.6|4.0|8.5±20%|18|35|0.30|120|2500|0.150|1.00| |V2F109A200Y2E _ _||9.0|6.4|12.7±15%|22|25|0.10|30|575|0.200|0.75| |V2F109C200Y1F _ _||9.0|6.4|12.7±15%|22|25|0.30|120|1800|0.150|1.00| |V2F114A300Y2E _ _||14.0|10.0|18.5±12%|32|15|0.10|30|300|0.200|0.75| |V2F114C300Y1F _ _||14.0|10.0|18.5±12%|32|15|0.30|120|900|0.150|1.00| |V2F118A400Y2E _ _||18.0|13.0|25.5±10%|42|10|0.10|30|200|0.200|0.75| |V2F118C400Y1F _ _||18.0|13.0|25.5±10%|42|10|0.30|120|500|0.150|1.00| |V2F118X500Y3D _ _||18.0|13.0|25.5±10%|50|10|0.05|20|75|0.250|0.50| |V2F126C600Y2E _ _||26.0|18.0|34.5±10%|60|10|0.3|80|250|0.2|0.75| ||Termination Finish Code<br>Packain Code||||||||||| Termination Finish Code Packaging Code VW (DC) DC Working Voltage (V) ET VW (AC) AC Working Voltage (V) IP VB Typical Breakdown Voltage (V @ 1mADC) Cap VB Tol VB Tolerance is ± from Typical Value DCR VC Clamping Voltage (V @ 1A 8x20μS) IFT IL Maximum Leakage Current at the Working Voltage (μA) Transient Energy Rating (J, 10x1000μS) Peak Current Rating (A, 8x20μS) Typical Capacitance (pF) @ 1MHz and 0.5 V DC Resistance (Ohms) Maximum Feedthru Current (A) 84 080216 ## **TransFeed AVX Multilayer Ceramic Transient Voltage Suppressors TVS Protection and EMI Attenuation in a Single Chip** ## **dB Attenuation vs Frequency** **==> picture [511 x 182] intentionally omitted <==** **----- Start of picture text -----**<br> 0 0<br>TransFeed 0.1J TransFeed 0.3J<br>18LC<br>-10 -10<br>18A<br>18C<br>14A<br>-20 -20<br>9A 14C<br>-30 -30<br>9C<br>5A<br>-40 -40<br>5C<br>-50 -50<br>-60 -60<br>-70 -70<br>0.01 0.1 1 10 0.01 0.1 1 10<br>Frequency (GHz) Frequency (GHz)<br>(dB) (dB)<br>**----- End of picture text -----**<br> ## **DIMENSIONS** |||||||||| |---|---|---|---|---|---|---|---|---| |**DIMENSIONS**<br>**mm (inches)**||||||||| ||**L**|**W**|**T**|**BW**|**BL**|**EW**|**X**|**S**| |**0805**|2.01 ± 0.20<br>(0.079 ± 0.008)|1.25 ± 0.20<br> (0.049 ± 0.008)|1.143 Max.<br>(0.045 Max.)|0.46 ± 0.10<br>(0.018 ± 0.004)|0.18 + 0.25 -0.08<br> (0.007 + 0.010 -0.003)|0.25 ± 0.13<br> (0.010 ± 0.005)|1.02 ± 0.10<br> (0.040 ± 0.004)|0.23 ± 0.05<br> (0.009 ± 0.002)| ## **RECOMMENDED SOLDER PAD LAYOUT (Typical Dimensions)** |||||||| |---|---|---|---|---|---|---| |**RECOMMENDED SOLDER PAD LAYOUT(Typical Dimensions)**<br>**mm (inches)**||||||| ||**T**|**P**|**S**|**W**|**L**|**C**| |**0805**|3.45 (0.136)|0.51 (0.020)|0.76 (0.030)|1.27 (0.050)|1.02 (0.040)|0.46 (0.018)| ## **4 Pad Layout** **==> picture [122 x 166] intentionally omitted <==** **----- Start of picture text -----**<br> L<br>X<br>S<br>T<br>BW<br>CL<br>BL<br>W<br>EW<br>**----- End of picture text -----**<br> **==> picture [239 x 149] intentionally omitted <==** **----- Start of picture text -----**<br> T<br>P<br>P<br>S W<br>INPUT OUTPUT<br>C L<br>**----- End of picture text -----**<br> 85 080216 ## **TransFeed AVX Multilayer Ceramic Transient Voltage Suppressors TVS Protection and EMI Attenuation in a Single Chip** ## **PERFORMANCE CHARACTERISTICS** ## **INSERTION LOSS COMPARISON (TransFeed vs TransGuard[®] )** ## **0805 – dB vs Frequency** **==> picture [465 x 412] intentionally omitted <==** **----- Start of picture text -----**<br> 5.6V, 0.1J 14V, 0.1J<br>0 0<br>VC080505A150 VC080514A300<br>-10<br>-10<br>-20<br>-20<br>-30<br>-30<br>-40<br>-40<br>-50<br>V2F105A150Y2E<br>-60 -50<br>V2F114A300Y2E<br>-70 -60<br>0.01 0.1 1 10 0.01 0.1 1 10<br>Frequency (GHz) Frequency (GHz)<br>18V, 0.1J 18V, 0.05J<br>0 0<br>VC080518A400 VC08LC18A500<br>-10 -10<br>-20<br>-20<br>-30<br>-30<br>-40<br>-40 V2F118X500Y3D<br>-50<br>-50 -60<br>V2F118A400Y2E<br>-60 -70<br>0.01 0.1 1 10 0.01 0.1 1 10<br>Frequency (GHz) Frequency (GHz)<br>5.6V, 0.3J 14V, 0.3J<br>0 0<br>VC080514C300<br>-10 -10<br>VC080505C150<br>-20 -20<br>-30 -30<br>-40 -40<br>-50 -50<br>V2F105C150Y1F V2F114C300Y1F<br>-60 -60<br>-70 -70<br>0.01 0.1 1 10 0.01 0.1 1 10<br>Frequency (GHz) Frequency (GHz)<br>(dB) (dB)<br>(dB) (dB)<br>(dB) (dB)<br>**----- End of picture text -----**<br> **==> picture [199 x 131] intentionally omitted <==** **----- Start of picture text -----**<br> 18V, 0.3J<br>0<br>VC080518C400<br>-10<br>-20<br>-30<br>-40<br>-50<br>V2F118C400Y1F<br>-60<br>-70<br>0.01 0.1 1 10<br>Frequency (GHz)<br>(dB)<br>**----- End of picture text -----**<br> 86 080216 ## **TransFeed AVX Multilayer Ceramic Transient Voltage Suppressors TVS Protection and EMI Attenuation in a Single Chip** ## **PERFORMANCE CHARACTERISTICS** ## **CURRENT vs TEMPERATURE** ## **0805 – 0.1 Joule** **==> picture [293 x 213] intentionally omitted <==** **----- Start of picture text -----**<br> 30<br>Note:<br>Dashed<br>18V Portions<br>Not Guaranteed<br>18LC 14V<br>25<br>5V<br>9V<br>20<br>0.3 0.5 0.75 1<br>Current (Amps)<br>C)<br>°<br>Component Temperature (<br>**----- End of picture text -----**<br> ## **CURRENT vs TEMPERATURE** **0805 – 0.3 Joule** **==> picture [342 x 207] intentionally omitted <==** **----- Start of picture text -----**<br> 30<br>18V<br>25<br>14V<br>5V<br>20<br>0 0.25 0.5 0.75 1<br>Current (Amps)<br>C)<br>°<br>Component Temperature (<br>**----- End of picture text -----**<br> 87 080216 ## **TransFeed AVX Multilayer Ceramic Transient Voltage Suppressors TVS Protection and EMI Attenuation in a Single Chip** ## **PERFORMANCE CHARACTERISTICS** ## **FEEDTHRU VARISTORS** AVX Multilayer Feedthru Varistors (MLVF) are an ideal choice for system designers with transient strike and broadband EMI/RFI concerns. Feedthru Varistors utilize a ZnO varistor material and the electrode pattern of a feedthru capacitor. This combination allows the package advantage of the feedthru and material advantages of the ZnO dielectric to be optimized. The electrical model for a ZnO MLV and a ZnO Feedthru MLV are shown below. The key difference in the model for the Feedthru is a transformation in parallel to series inductance. The added series inductance helps lower the injected transient peak current (by 2πfL) resulting in an additional benefit of a lower clamping voltage. The lowered parallel inductance decreases the turn on time for the varistor to <250ps. ZnO MLV Feedthrus exhibit electrical and physical advantages over standard ZnO MLVs. Among them are: 1. Faster Turn on Time 2. Broadband EMI attenuation 3. Small size (relative to discrete MLV and EMI filter schemes) ## **Discrete MLV Model** ## **Discrete MLVF Model** **==> picture [150 x 131] intentionally omitted <==** **----- Start of picture text -----**<br> To Device<br>PCB Requiring<br>Trace Protection<br>LP<br>RV C RP<br>Ron<br>Solder Pad<br>**----- End of picture text -----**<br> **==> picture [177 x 130] intentionally omitted <==** **----- Start of picture text -----**<br> To Device<br>Requiring<br>Protection<br>LS LS<br>Solder Pad Solder Pad<br>RV C RP<br>Ron<br>LP<br>Solder Pad<br>**----- End of picture text -----**<br> - Where: Rv = Voltage Variable resistance (per VI curve) - R ≥ 10[12] Ω p - C = defined by voltage rating and energy level Ron = turn on resistance - Lp = parallel body inductance - Where: Rv = Voltage Variable resistance (per VI curve) - Rp = Body IR - C = defined by voltage rating and energy level Ron = turn on resistance Lp = minimized parallel body inductance Ls = series body inductance 88 080216 ## **TransFeed AVX Multilayer Ceramic Transient Voltage Suppressors TVS Protection and EMI Attenuation in a Single Chip** ## **PERFORMANCE CHARACTERISTICS** ## **APPLICATIONS** - EMI Suppression - Broadband I/O Filtering - Vcc Line Conditioning ## **FEATURES** - Small Size - Low ESR - Ultra-fast Response Time - Broad S21 Characteristics ## **MARKET SEGMENTS** - Computers - Automotive - Power Supplies - Multimedia Add-On Cards - Bar Code Scanners - Remote Terminals - Medical Instrumentation - Test Equipment - Transceivers - Cellular Phones / Pagers ## **TYPICAL CIRCUITS REQUIRING TRANSIENT VOLTAGE** ## **PROTECTION AND EMI FILTERING** The following applications and schematic diagrams show where TransFeed TVS/ EMI filtering devices might be used: - System Board Level Interfaces: (Fig. 1) Digital to RF Analog to Digital Digital to Analog - Voltage Regulation (Fig. 2) - Power Conversion Circuits (Fig. 3) - GaAs FET Protection (Fig. 4) **Fig. 1 – System Interface** **==> picture [252 x 182] intentionally omitted <==** **----- Start of picture text -----**<br> Sensor/Keyboard/<br>Touchscreen Input<br>DIGITAL�BOARD RF BOARD<br>By X Bus<br>Sensor Input Display<br>ANALOG� DIGITAL�<br>BOARD BOARD<br>Keyboard<br>DIGITAL� ANALOG�<br>BOARD BOARD<br>**----- End of picture text -----**<br> **==> picture [152 x 37] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 2 – Voltage Regulators<br>REGULATOR +<br>**----- End of picture text -----**<br> **Fig. 3 – Power Conversion Circuits/Power Switching Circuits** **==> picture [229 x 113] intentionally omitted <==** **----- Start of picture text -----**<br> +3.3V<br>MAIN� POWER� INTERFACE�<br>POWER MANAGEMENT�� +3.3V CARD<br>CHIP<br>+5V<br>+1.8V<br>+12V<br>ASIC<br>**----- End of picture text -----**<br> **Fig. 4 – GaAs FET Protection** ## **SPECIFICATION COMPARISON** |**MLVF**<br>**0805**|**PARAMETER**|**MLV**<br>**0805**| |---|---|---| |5ph|**Ls**<br>**typical**|N/A| |<600nh|**Lp**<br>**typical**|<1.5nh| |<0.025Ω|**Ron**<br>**typical**|<0.1Ω| |100pf to 2.5nf|**C**<br>**typical**|100pf to 5.5nf| |see VI curves|**Rv**<br>**typical**|see VI curves| |>0.25 x 1012Ω|**Rp**<br>**typical**|>1 x 1012Ω| |<250ps|**Typical turn on time**<br>**Typical frequency response**|<500ps| **==> picture [185 x 23] intentionally omitted <==** **----- Start of picture text -----**<br> INPUT OUTPUT<br>**----- End of picture text -----**<br> A comparison table showing typical element parameters and resulting performance features for MLV and MLVF is shown above. 89 080216
Updated at April 26, 2026
KYOCERA AVX is a globally recognized leader in the design, development, and manufacturing of advanced electronic components. For over 50 years, the company has provided innovative solutions across the automotive, industrial, medical, military, consumer electronics, and communications markets. Supported by an extensive international network of research and production facilities, KYOCERA AVX is renowned for delivering highly reliable components that meet the stringent demands of modern engineering. The manufacturer's extensive portfolio is strongly anchored in high-performance passive components, with a particular emphasis on advanced capacitive solutions. Their offering features a comprehensive selection of polymer capacitors, RF capacitors, and supercapacitors engineered for demanding power and high-frequency requirements. This core lineup is further supported by a variety of film and aluminium electrolytic capacitors, alongside precision power inductors. Beyond passive components, KYOCERA AVX excels in robust circuit protection and discrete semiconductors. Their expertise in transient voltage suppression is demonstrated by a wide array of TVS varistors and TVS diodes, complemented by temperature-sensing NTC thermistors and reliable Schottky diodes. The product ecosystem is completed by precision timing devices, including crystals and resonators, as well as specialized RF antennas, providing engineers with a versatile and dependable foundation for next-generation technology.
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