US5U1TR

US5U1 

Transistors 

## 2.5V Drive Nch+SBD MOSFET 

## **US5U1** 

## � **Structure** 

Silicon N-channel MOSFET / Schottky barrier diode 

## � **Features** 

- 1) Nch MOSFET and schottky barrier diode are put in TUMT5 package. 

- 2) High-speed switching, Low On-resistance. 

- 3) Low voltage drive (2.5V drive). 

- 4) Built-in Low VF schottky barrier diode. 

## � **Dimensions** (Unit : mm) 

**==> picture [187 x 129] intentionally omitted <==**

**----- Start of picture text -----**<br>
TUMT5<br>2.0<br>1.3<br>Abbreviated symbol : U01<br>0.2Max.<br>**----- End of picture text -----**<br>


� **Applications** Switching 

- **Package specifications** � **Inner circuit** 

|Type|Package|Taping|
|---|---|---|
||Code|TR|
||Basic ordering unit (pieces)|3000|
|US5U1|||



## � **Absolute maximum ratings** (Ta=25°C) 

**==> picture [146 x 123] intentionally omitted <==**

**----- Start of picture text -----**<br>
(5) (4)<br>∗ 2<br>∗ 1 (1)Gate<br>(2)Source<br>(1) (2) (3) (3)Anode<br>∗ 1 ESD protection diode (4)Cathode<br>∗ 2 Body diode (5)Drain<br>**----- End of picture text -----**<br>


|<MOSFET>|||||
|---|---|---|---|---|
|Parameter||Symbol|Limits|Unit|
|Drain-source voltage||VDSS|30|V|
|Gate-source voltage||VGSS|12|V|
|Drain current|Continuous|ID|±1.5|A|
||Pulsed|∗1<br>IDP|±6.0|A|
|Source current<br>(Body diode)|Continuous|IS|0.75|A|
||Pulsed|∗1<br>ISP|6.0|A|
|Power dissipation||∗2<br>PD|0.7|W / ELEMENT|
|Channel temperature||Tch|150|°C|



- ∗ 1 Pw ≤ 10 µ s, Duty cycle ≤ 1% 

- ∗ 2 Mounted on a ceramic board 

<Di> 

|<Di>||||
|---|---|---|---|
|Parameter|Symbol|Limits|Unit|
|Repetitive peak reverse voltage|VRM|30|V|
|Reverse voltage|VR|20|V|
|Forward current|IF|0.5|A|
|Forward current surge peak|∗1<br>IFSM|2.0|A|
|Power dissipation|∗2<br>PD|0.5|W / ELEMENT|
|Junction temperature|Tj|150|°C|
|∗1 60Hz   1cycle||||



- ∗ 2 Mounted on ceramic board 

Rev.B 

1/3 

US5U1 

## Transistors 

|<MOSFET and Di>|<MOSFET and Di>|<MOSFET and Di>|<MOSFET and Di>|
|---|---|---|---|
|Parameter|Symbol|Limits|Unit|
|Total power dissipation|∗1<br>PD|1.0|W / TOTAL|
|Range of storage temperature|Tstg|−55 to+150|°C|



∗ 1  Mounted on a ceramic board 

## � **Electrical characteristics** (Ta=25°C) 

<MOSFET> 

|<MOSFET>|||||||||
|---|---|---|---|---|---|---|---|---|
|Parameter|Symbol|||Min.|Typ.|Max.|Unit|Conditions|
|Gate-source leakage|IGSS|||−|−|10|µA|VGS=12V, VDS=0V|
|Drain-source breakdown voltage|V(BR) DSS|||30|−|−|V|ID= 1mA, VGS=0V|
|Zero gate voltage drain current|IDSS|||−|−|1|µA|VDS= 30V, VGS=0V|
|Gate threshold voltage|VGS (th)|||0.5|−|1.5|V|VDS= 10V, ID= 1mA|
|Static drain-source on-state<br>resistance|RDS (on)<br>∗|||−|170|240|mΩ|ID= 1.5A, VGS= 4.5V|
|||||−|180|250|mΩ|ID= 1.5A, VGS= 4V|
|||||−|240|340|mΩ|ID= 1.5A, VGS= 2.5V|
|Forward transfer admittance||Yfs|∗|1.5|−|−|S|VDS= 10V, ID= 1.5A|
|Input capacitance|Ciss|||−|80|−|pF|VDS= 10V<br>VGS=0V<br>f=1MHz|
|Output capacitance|Coss|||−|14|−|pF||
|Reverse transfer capacitance|Crss|||−|12|−|pF||
|Turn-on delay time|td (on)<br>∗|||−|7|−|ns|VDD15V<br>ID= 0.75A<br>VGS= 4.5V<br>RL= 20Ω<br>RG=10Ω|
|Rise time|tr<br>∗|||−|9|−|ns||
|Turn-off delay time|td (off)<br>∗|||−|15|−|ns||
|Fall time|tf<br>∗|||−|6|−|ns||
|Total gate charge|Qg<br>∗|||−|1.6|2.2|nC|VDD  15V, VGS= 4.5V<br>ID= 1.5A<br>RL= 10Ω,RG= 10Ω|
|Gate-sourcecharge|Qgs<br>∗|||−|0.5|−|nC||
|Gate-draincharge|Qgd<br>∗|||−|0.3|−|nC||
|∗Pulsed|||||||||



|<Bodydiode characteristics(Source-drain)>|<Bodydiode characteristics(Source-drain)>|<Bodydiode characteristics(Source-drain)>|<Bodydiode characteristics(Source-drain)>|<Bodydiode characteristics(Source-drain)>|<Bodydiode characteristics(Source-drain)>|<Bodydiode characteristics(Source-drain)>|
|---|---|---|---|---|---|---|
|Parameter|Symbol|Min.|Typ.|Max.|Unit|Conditions|
|Forward voltage|VSD|−|−|1.2|V|IS= 0.75A, VGS=0V|



<Di> 

|<Di>|||||||
|---|---|---|---|---|---|---|
|Parameter|Symbol|Min.|Typ.|Max.|Unit|Conditions|
|Forward voltage|VF|−|−|0.36|V|IS= 0.1A|
|||−|−|0.47|V|IS= 0.5A|
|Reverse current|IR|−|−|100|µA|IS= 20V|



Rev.B 

2/3 

US5U1 

## Transistors 

## � **Electrical characteristics curves** 

**==> picture [448 x 567] intentionally omitted <==**

**----- Start of picture text -----**<br>
1000 Ta=25 ° C 6 Ta=25 ° C 10 VDS=10V<br>VDD=15V VDD=15V Pulsed<br>tf RPulsedVGSG=10=4.5V Ω 5 PulsedIRDG=1.5A=10 Ω 1 Ta=125 ° C<br>100 4 75 ° C<br>25 ° C<br>td(off) − 25 ° C<br>3 0.1<br>10 td(on) 2<br>0.01<br>tr 1<br>1 0 0.001<br>0.01 0.1 1 10 0 0.5 1 1.5 2 0.0 0.5 1.0 1.5 2.0 2.5<br>DRAIN CURRENT : ID (A) TOTAL GATE CHARGE : Qg (nC) GATE-SOURCE VOLTAGE : VGS (V)<br>Fig.1  Switching Characteristics Fig.2   Dynamic Input Characteristics Fig.3  Typical Transfer Characteristics<br>1.0 Ta=25 ° C 10 VGS=0V 10 VGS=4.5V<br>0.9 Pulsed Pulsed Pulsed<br>0.8<br>Ta=125 ° C<br>0.70.6 1 7525 °° CC<br>0.5 − 25 ° C 1 Ta=125 ° C<br>75 ° C<br>0.4 25 ° C<br>0.3 0.1 − 25 ° C<br>0.2<br>0.1<br>0.00 1 2 3 4 5 6 7 8 9 10 0.01 0.10.01 0.1 1 10<br>0.0 0.5 1.0 1.5<br>GATE-SOURCE VOLTAGE : VGS (V) SOURCE-DRAIN VOLTAGE : VSD (V) DRAIN CURRENT : ID (A)<br>Fig.4  Static Drain-Source Fig.6  Static Drain-Source<br>                  On-State Resistance vs. Fig.5  Source Current vs.             On-State Resistance<br>            Gate source Voltage               Source-Drain Voltage              vs. Drain Current (  Ι  )<br>10 VGS=4.0V 10 VGS=2.5V 10 Ta=25 ° C<br>Pulsed Pulsed Pulsed<br>1 Ta=125 ° C 1 Ta=125 ° C 1<br>75 ° C 75 ° C VGS=2.5V<br>25 ° C 25 ° C VGS=4V<br>− 25 ° C − 25 ° C VGS=4.5V<br>0.1 0.1 0.1<br>0.01 0.1 1 10 0.01 0.1 1 10 0.01 0.1 1 10<br>DRAIN CURRENT : ID (A) DRAIN CURRENT : ID (A) DRAIN CURRENT : ID (A)<br>Fig.7  Static Drain-Source Fig.8  Static Drain-Source Fig.9  Static Drain-Source<br>            On-State Resistance             On-State Resistance             On-State Resistance<br>              vs. Drain Current (  ΙΙ  )                vs. Drain Current (  ΙΙΙ  )                vs. Drain Current (  Ι    )<br> (V)<br>GS<br> (A)<br>D<br>SWITCHING TIME : t (ns) DRAIN CURRENT : I<br>GATE-SOURCE VOLTAGE : V<br>) (m Ω ) ( Ω<br>DS SOURCE CURRENT : I (A)S DS (on)<br>STATIC DRAIN-SOURCE                   ON-STATE RESISTANCE : R STATIC DRAIN-SOURCE                      ON-STATE RESISTANCE : R<br>) Ω ) Ω ) Ω<br> (  (  (<br>DS (on) DS (on) DS (on)<br>STATIC DRAIN-SOURCE                      ON-STATE RESISTANCE : R STATIC DRAIN-SOURCE                      ON-STATE RESISTANCE : R STATIC DRAIN-SOURCE                      ON-STATE RESISTANCE : R<br>**----- End of picture text -----**<br>


Rev.B 

3/3 

Appendix 

## Notes 

No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. 

The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. 

## About Export Control Order in Japan 

Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. 

In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. 

Appendix1-Rev1.1