US2KA

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## Super Fast Surface Mount Rectifiers 

ot 1 2 Cathode Anode 

## **Features** 

- Glass Passivated Chip Junction 

- High Surge Capacity 

- Low Forward Voltage Drop 

- Fast Switching with Reverse Recovery Time: 50∼75 ns Maximum 

- UL Flammability 94 V − 0 Classification 

- MSL 1 per J−STD−020 

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1<br>2<br>SMA<br>CASE 403AE<br>**----- End of picture text -----**<br>


- RoHS Compliant / Green Molding Compound 

- NRV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable* 

## **Table 1. ORDERING INFORMATION** 

|**Part Number**|**Top Mark**|**Package**|**Packing**<br>**Method**|
|---|---|---|---|
|US2AA|US2AA|DO−214AC (SMA)|Tape and Reel|
|US2BA|US2BA|DO−214AC (SMA)|Tape and Reel|
|US2DA|US2DA|DO−214AC (SMA)|Tape and Reel|
|US2FA,<br>NRVUS2FA*|US2FA|DO−214AC (SMA)|Tape and Reel|
|US2GA,<br>NRVUS2GA*|US2GA|DO−214AC (SMA)|Tape and Reel|
|US2JA,<br>NRVUS2JA*|US2JA|DO−214AC (SMA)|Tape and Reel|
|US2KA,<br>NRVUS2KA*|US2KA|DO−214AC (SMA)|Tape and Reel|
|US2MA,<br>NRVUS2MA*|US2MA|DO−214AC (SMA)|Tape and Reel|



## **MARKING DIAGRAM** 

$Y&Z&3 US2XA 

$Y = **onsemi** Logo &Z = Assembly Plant Code &3 = Data Code (Year & Week) US2XA = Specific Device Code X = A/B/D/F/G/J/K/M 

## **ORDERING INFORMATION** 

See detailed ordering, marking and shipping information on page 1 of this data sheet. 

NOTE: Some of the devices on this data sheet have been **DISCONTINUED** . Please refer to the table on page 1. 

## **DISCONTINUED** (Note 1) 

|**DISCONTINUED**(Note 1)|(Note 1)|||
|---|---|---|---|
|NRVUS2AA*|US2AA|DO−214AC (SMA)|Tape and Reel|
|NRVUS2BA*|US2BA|DO−214AC (SMA)|Tape and Reel|
|NRVUS2DA*|US2DA|DO−214AC (SMA)|Tape and Reel|



- †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 

1. **DISCONTINUED:** These devices are not recommended for new design. Please contact your **onsemi** representative for information. The most current information on these devices may be available on www.onsemi.com. 

Publication Order Number: **US2AA/D** 

**1** 

© Semiconductor Components Industries, LLC, 2018 **June, 2024 − Rev. 5** 

**US2AA−US2MA** 

## **Table 2. ABSOLUTE MAXIMUM RATINGS** 

|**Symbol**|**Parameter**|||||||||**Unit**|
|---|---|---|---|---|---|---|---|---|---|---|
|||**US2**<br>**AA**|**US2**<br>**BA**|**US2**<br>**DA**|**US2**<br>**FA**|**US2**<br>**GA**|**US2**<br>**JA**|**US2**<br>**KA**|**US2**<br>**MA**||
|VRRM<br>~~po~~|Repetitive Peak Reverse Voltage<br>~~po~~|50<br>~~po~~|100<br>~~po~~|200<br>~~po~~|300<br>~~po~~|400<br>~~po~~|600<br>~~po~~|800<br>~~po~~|1000<br>~~po~~|V<br>~~po~~|
|VRMS<br>~~a~~|RMS Reverse Voltage<br>~~eG~~|35<br>~~eG~~|70<br>~~eG~~|140<br>~~eG~~|210<br>~~eG~~|280|420<br>~~GO~~|560<br>~~GO~~|700|V|
|VDC<br>~~po~~|DC Blocking Voltage<br>~~po~~|50<br>~~po~~|100<br>~~po~~|200<br>~~po~~|300<br>~~po~~|400<br>~~po~~|600<br>~~po~~|800<br>~~po~~|1000<br>~~po~~|V<br>~~po~~|
|IF(AV)<br>~~a~~|Average Forward Rectified Current|1.5||||||||A|
|IFSM|Peak Forward Surge Current,<br>8.3 ms Single Half−Sine Wave,<br>Superimposed on Rated Load|50||||||||A|
|TJ<br>~~a~~|Operating Junction Temperature Range|−55 to +150||||||||°C|
|TSTG<br>~~a~~|Storage Temperature Range|−55 to +150||||||||°C|



Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 

**Table 3. THERMAL CHARACTERISTICS (NOTE 1)** (Values are at TA = 25 ° C unless otherwise noted) 

|**Table 3. THERMAL CHARACTERISTICS (NOTE 1)**<br>~~Pe~~|**Table 3. THERMAL CHARACTERISTICS (NOTE 1)**(Values are at TA = 25A = 25= 25°C unless otherwise noted)|C unless otherwise noted)||
|---|---|---|---|
|**Symbol**<br>~~Pe~~|**Parameter**|**Value**|**Unit**|
|R JA<br>~~Pe~~<br>~~a~~|Typical Thermal Resistance, Junction−to−Ambient<br>~~a~~|189|°C/W|
|JL<br>~~a~~|Typical Thermal Characteristics, Junction−to−Lead (with Reference to Cathode Pin)<br>~~a~~|31|°C/W|



2. Device mounted at minimum pad. 

**Table 4. ELECTRICAL CHARACTERISTICS** (Values are at TA = 25 ° C unless otherwise noted) 

|**Symbol**|**Parameter**|**Parameter**|**Value**|**Value**|**Value**|**Value**|**Value**|**Value**|**Value**|**Value**|**Unit**|
|---|---|---|---|---|---|---|---|---|---|---|---|
||||**US2**<br>**AA**|**US2**<br>**BA**|**US2**<br>**DA**|**US2**<br>**FA**|**US2**<br>**GA**|**US2**<br>**JA**|**US2**<br>**KA**|**US2**<br>**MA**||
|VF|Maximum Instantaneous Forward Voltage (Note2)<br>at Rated IF(AV)||1.0||||1.3|1.7|||V|
|IR<br>~~a~~|Maximum Re-<br>verse Current<br>at Rated VR<br>~~a~~|TJ = 25°C<br>~~eee~~|5<br>~~eee~~||||||||A<br>~~eee~~|
|||TJ = 125°C<br>~~eee~~|100<br>~~eee~~|||||||||
|trr<br>~~a Ce~~|Maximum Reverse Recovery Time (Note 3)<br>~~Ce~~||50<br>~~Ce~~||||75<br>~~Ce~~||||ns<br>~~Ce~~|
|CJ<br>~~a~~|Typical Junction Capacitance (Note 4)<br>~~DG~~||50<br>~~DG~~||||30<br>~~DG~~||||pF<br>~~DG~~|



3. Pulse test with PW = 300 s, 1% duty cycle u 

4. Reverse recovery test conditions: IF = 0.5 A, IR = 1.0 A, IRR = 0.25 A 

5. Measured at 1 Mhz and applied reverse voltage of 4.0 V D.C. 

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**US2AA−US2MA** 

## **TYPICAL PERFORMANCE CHARACTERISTICS** 

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Oo<br>100 hs<br>10 eee TJ=125 ee ee ae<br>pf<br>foa eees<br>Fn ets<br>—— TJ=25<br>A<br>160 ott: | Jt |ff<br>0 20 40 60 80 100 120 140<br>PERCENT OF RATED PEAK REVERSE VOLTAGE (%)<br>Figure 2. Typical Reverse Characteristics<br>10 s,s<br>a A<br>eea 2 ee<br> A<br>a A<br>US2AA−US2FA<br>l| F rp<br>[_|| US2GA [YiYfs] Ff —_ f | ——|<br>Fl KF A<br>ee ey OeyLf eyT.“.--—)|—— 2<br>ey a A<br>| |Ff | [F][YN]<br>US2JA−US2MA<br>| |<br>0.1<br>100 0.4 0.6 0.8 1 1.2 1.4<br>FORWARD VOLTAGE (V)<br>( A)<br>INSTANTANEOUS REVERSE CURRENT<br>INSTANTANEOUS FORWARD CURRENT (A)<br>INSTANTANEOUS FORWARD CURRENT (A)<br>**----- End of picture text -----**<br>


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'<br>RESISTIVE OR<br>05 INDUCTIVE LOAD<br>0<br>0 20 40 60 80 100<br>LEAD TEMPERATURE ( [o] C)<br>CURRENT (A)<br>AVERAGE FORWARD<br>**----- End of picture text -----**<br>


**Figure 1. Forward Current Derating Curve** 

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|<br>8.3ms Single Half Sine Wave<br>"CLToS<br>30 N“<br>XS<br>a oNN<br>©Cr™™<br>1 0<br>NUMBER OF CYCLES AT 60 Hz<br>C URRENT (A)<br>PEAK FORWARD SURGE<br>**----- End of picture text -----**<br>


**Figure 3. Maximum Non−Repetitive Forward Surge Current** 

**Figure 4. Typical Forward Characteristics** 

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f=1.0MHz<br>Vslg=50mVp−p<br>150425 CMCC<br>|<br>75 TTIBS sss = US2AA−US2GA<br>Bnelll| meellll|Lp<br>Faia etl<br>25 Pe)<br>US2JA−US2MA<br>Th > ~<br>0 ITSS<br>0.1 1 10 100<br>REVERSE VOLTAGE (V)<br>CAPACITANCE (pF)<br>**----- End of picture text -----**<br>


**Figure 5. Typical Forward Characteristics** 

**Figure 6. Typical Forward Characteristics** 

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MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** 

**SMA** CASE 403AE ISSUE O 

DATE 31 AUG 2016 

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5.60<br>B B 0.13 M C B A<br>4.80<br>2.65<br>2.95 1.65<br>B  1.75<br>2.50 1.20<br>4.30<br>4.75<br>A B<br>4.00<br>LAND PATTERN RECOMMENDATION<br>TOP VIEW<br> 2.50 MAX<br>A<br>2.20<br>NOTES:<br>1.90<br>  A.   EXCEPT WHERE NOTED, CONFORMS<br>         TO JEDEC DO214 VARIATION AC.<br>0.203 0.30 B DOES NOT COMPLY JEDEC STANDARD<br>B 0.050 0.05         VALUE.<br>C   C.   ALL DIMENSIONS ARE IN MILLIMETERS.<br>2.05 0.13 M C B A   D.  DIMENSIONS ARE EXCLUSIVE OF<br>1.95         BURRS, MOLD FLASH AND TIE BAR<br>        PROTRUSIONS.<br>SIDE VIEW<br>  E.  DIMENSIONS AND TOLERANCE AS<br>       PER ASME Y14.5−2009.<br>8 °   E.  LAND PATTERN STD. DIOM5025X231M<br>0 °<br> R0.15 4X<br>GAGE PLANE<br>0.45<br>0.41<br>0.15<br>1.52<br>8 ° 0.75<br>0 °<br>DETAIL A<br>SCALE 20 : 1<br>**----- End of picture text -----**<br>


Electronic versions are uncontrolled except when accessed directly from the Document Repository. **DOCUMENT NUMBER: 98AON13440G** Printed  versions are uncontrolled  except when stamped  “CONTROLLED COPY” in red. **DESCRIPTION: SMA PAGE 1 OF 1** 

**onsemi** and                     are trademarks of Semiconductor Components Industries, LLC dba **onsemi** or its subsidiaries in the United States and/or other countries. **onsemi** reserves the right to make changes without further notice to any products herein. **onsemi** makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. **onsemi** does not convey any license under its patent rights nor the rights of others. 

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© Semiconductor Components Industries, LLC, 2016 

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