US1MFA
Fast / Ultrafast Diode, 1 kV, 1 A, Single, 1.7 V, 75 ns, 30 A
- Manufacturer: ONSEMI
- Product type: Fast & Ultrafast Recovery Rectifier Diodes
- Repetitive Reverse Voltage Vrrm Max:1kV; Forward Current If(AV):1A; Diode Configuration:Single; Forward Voltage VF Max:1.7V; Reverse Recovery Time trr Max:75ns; Forward Surge Curr
- SVHC: Lead (25-Jun-2025)
- No. of Pins: 2 Pin
- Product Range: -
- Qualification: AEC-Q101
- Diode Case Style: SOD-123FA
- Diode Configuration: Single
- Forward Voltage Max: 1.7V
- Forward Surge Current: 30A
- Reverse Recovery Time: 75ns
- Average Forward Current: 1A
- Operating Temperature Max: 150°C
- Repetitive Peak Reverse Voltage: 1kV
| Delivery and price | |
|---|---|
| Units per pack | 9000 |
| Price | 0.103 € |
| Current stock | 1000+ |
| Lead time | 30 days |
## **Is Now Part of**
## **To learn more about ON Semiconductor, please visit our website at www.onsemi.com**
Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore (_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please email any questions regarding the system integration to Fairchild_questions@onsemi.com.
ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
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May 2016<br>**----- End of picture text -----**<br>
## **US1AFA - US1MFA Super Fast Surface Mount Rectifiers**
## **Features**
- Glass Passivated Chip Junction
- Low Power Loss, High Efficiency
- Fast Switching Reverse Recovery Time: 50~75 ns Maximum
- High Surge Capacity
- UL Flammability 94V-0 Classification
- MSL 1 per J-STD-020
- RoHS Compliant / Green Molding Compound
- Industrial Device Qualified per AEC-Q101 Standards
- See authorized use policy
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2<br>1<br>SOD-123FA<br>—- 1 2<br>Cathode Anode<br>**----- End of picture text -----**<br>
## **Ordering Information**
|**Part Number**|**Top Mark**|**Package**|**Packing Method**|
|---|---|---|---|
|US1AFA|HAL|SOD-123FA|Tape and Reel|
|US1BFA|HBL|SOD-123FA|Tape and Reel|
|US1DFA|HDL|SOD-123FA|Tape and Reel|
|US1FFA|HFL|SOD-123FA|Tape and Reel|
|US1GFA|HGL|SOD-123FA|Tape and Reel|
|US1JFA|HJL|SOD-123FA|Tape and Reel|
|US1KFA|HKL|SOD-123FA|Tape and Reel|
|US1MFA|HML|SOD-123FA|Tape and Reel|
© 2015 Fairchild Semiconductor Corporation US1AFA - US1MFA Rev. 1.2
www.fairchildsemi.com
## **Absolute Maximum Ratings**
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
|**Symbol**|**Parameter**|**Value**|**Value**|**Value**|**Value**|**Value**|**Value**|**Value**|**Value**|**Unit**|
|---|---|---|---|---|---|---|---|---|---|---|
|||**US1**<br>**AFA**|**US1**<br>**BFA**|**US1**<br>**DFA**|**US1**<br>**FFA**|**US1**<br>**GFA**|**US1**<br>**JFA**|**US1**<br>**KFA**|**US1**<br>**MFA**||
|VRRM|Repetitive Peak Reverse Voltage|50|100|200|300|400|600|800|1000|V|
|VRMS|RMS Reverse Voltage|35|70|140|210|280|420|560|700|V|
|VR|DC Blocking Voltage|50|100|200|300|400|600|800|1000|V|
|IF(AV)|Average Forward Rectified Current|1||||||||A|
|IFSM|Peak Forward Surge Current: 8.3 ms<br>Single Half Sine-Wave Superimposed<br>on Rated Load|30||||||||A|
|TJ|Operating Junction Temperature Range|-55 to +150||||||||C|
|TSTG|Storage Temperature Range|-55 to +150||||||||C|
## **Thermal Characteristics**
Values are at TA = 25°C unless otherwise noted.
|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|JL|Typical Thermal Characteristics, Junction-to-Lead|21|C/W|
|RJA|Typical Thermal Resistance, Junction-to-Ambient|153|C/W|
## **Note:**
1. Device mounted at minimum pad.
## **Electrical Characteristics**
Values are at TA = 25°C unless otherwise noted.
|**Symbol**|**Parameter**|**Conditions**|**Value**|**Value**|**Value**|**Value**|**Value**|**Value**|**Value**|**Value**|**Unit**|
|---|---|---|---|---|---|---|---|---|---|---|---|
||||**US1**<br>**AFA**|**US1**<br>**BFA**|**US1**<br>**DFA**|**US1**<br>**FFA**|**US1**<br>**GFA**|**US1**<br>**JFA**|**US1**<br>**KFA**|**US1**<br>**MFA**||
|VF|Maximum Instantaneous<br>Forward Voltage(2)|IF= 1 A|0.95||||1.30|1.70|||V|
|IR|Maximum Reverse<br>Current at Rated VR|TJ= 25°C|5||||||||A|
|||TJ= 125°C|150|||||||||
|CJ|Typical Junction<br>Capacitance|VR= 4 V,<br>f = 1 MHz|20|||||15|||pF|
|Trr|Maximum Reverse<br>Recovery Time|IF= 0.5 A,<br>IR= 1 A,<br>Irr= 0.25 A|50|||||75|||ns|
## **Note:**
2. Pulse test with PW = 300 μs, 1% duty cycle
© 2015 Fairchild Semiconductor Corporation US1AFA - US1MFA Rev. 1.2
www.fairchildsemi.com
2
## **Typical Performance Characteristics**
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—Al———— ees -<br>1 49 ee<br>TJ=125<br>08 2 ——=—————ee a ee ee<br>0.6 B ee oe<br>Fon<br>0.4 _——————————<br>02 er TJ=25<br>0 0001 SEESa WF i EE<br>80 90 100 110 120 130 140 150 0 20 40 60 80 100 120<br>PERCENT OF RATED PEAK REVERSE VOLTAGE (%)<br>LEAD TEMPERATURE ( [o] C)<br>Figure 1. Maximum Forward Current Figure 2. Typical Reverse Characteristics<br>Derating Voltage<br>40 ES<br>35 eSa ee es ee<br>» |LT HI a US1AFA-US1DFA<br>8.3ms Single Half Sine Wave<br>25 {| a<br>‘ US1GFA<br>20 PONT tT i<br> ST AY __<br>a ell S E<br>US1JFA-US1MFA<br>40 eeaa ||| Mp ——— ff eensAe es<br>5 FT [TUE] Ys tr| oi MfesLL IZ/YA" A| | |<br>1 10 100 0 0.2 0.4 0.6 0.8 1 1.2 1.4<br>NUMBER OF CYCLES AT 60 Hz FORWARD VOLTAGE (V)<br>Figure 3. Maximum Non-Repetitive Figure 4. Typical Instantaneous<br>Forward Surge Current Forward Characteristics<br>» LO T_T<br>60 NONNOUCTIVE —_NONINOUCTIVE |. Ww +<br>50 en are Ie<br>40 an a a ; Neen<br>US1AFA-US1GFA<br>30 PNPeTTI TTI{*)(approx) PULSE(NOTEa2) 025A0 +—+-—+| LA |<br>20 SUSITTT TMM [sen ER To Heo<br>o ESSLTT SUP SH $ inouctivey “OTE” | i | | |<br>US1JFA-US1MFA<br>0 PaLee SOECT LI Setehee aoeee eee ene 7 ww NAT<br>0.1 1 10 100 1000<br>REVERSE VOLTAGE (V)<br>AVERAGE FORWARD CURRENT (A) INSTANTANEOUS REVERSE CURRENT<br>URRENT (A)<br>C<br>CURRENT (A)<br>INSTANTANEOUS FORWARD<br>PEAK FORWARD SURGE<br>JUNCTION CAPACITANCE (pF)<br>**----- End of picture text -----**<br>
**Figure 5. Typical Junction Capacitance**
**Figure 6. Reverse Recovery Time Characteristic and Test Circuit Diagram**
© 2015 Fairchild Semiconductor Corporation US1AFA - US1MFA Rev. 1.2
www.fairchildsemi.com
3
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[2.90]<br>2.70<br> 4.30<br>[1.90] 1.40 1.90 1.40<br>1.70<br> 1.20 1.20<br>TOP VIEW<br>LAND PATTERN RECOMMENDATION<br>[1.43]<br>1.23<br>[3.80] [0.30]<br>3.40 0.16<br>FRONT VIEW<br>**----- End of picture text -----**<br>
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[0.85] [2.60]<br>0.35 2.45<br>[1.20]<br>0.80<br>**----- End of picture text -----**<br>
BOTTOM VIEW
NOTES:
- A. NO INDUSTRY STANDARD APPLIES TO THIS PACKAGE.
B. ALL DIMENSIONS ARE IN MILLIMETERS.
C. DIMENSIONS ARE EXCLUSIVE OF BURRS, MOLD FLASH AND TIE BAR PROTRUSIONS. D. DRAWING FILE NAME: MKT-MA02Drev3
**==> picture [99 x 44] intentionally omitted <==**
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
## **PUBLICATION ORDERING INFORMATION**
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www.onsemi.com
**www.onsemi.com**
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Updated at June 8, 2026
onsemi is a premier global supplier of intelligent power and sensing technologies, driving disruptive innovations across the automotive, industrial, and cloud infrastructure markets. Recognized for their commitment to sustainability and reliable supply chains, the company accelerates advancements in vehicle electrification, industrial automation, and 5G networks by solving the industry's most complex design challenges. At the core of their portfolio is an industry-leading selection of discrete semiconductors. This extensive range features thousands of high-performance bipolar transistors, single and dual MOSFETs, and a comprehensive array of diodes, including Zener, Schottky, and fast-recovery rectifiers. Engineered for superior thermal performance and energy efficiency, these foundational components are critical for demanding power conversion, switching, and signal conditioning applications. Beyond essential discretes, onsemi provides a robust suite of advanced power management and circuit protection solutions. Their lineup includes intelligent power modules, single IGBTs, and transient voltage suppression (TVS) diodes designed to safeguard sensitive circuitry. Complimented by integrated passive filters, AC/DC LED driver ICs, and specialized sub-2.4GHz RF transceivers, onsemi equips engineers with the scalable, high-quality technologies needed to build a cleaner, smarter, and more connected world.
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