US1FFA
Fast / Ultrafast Diode, 300 V, 1 A, Single, 950 mV, 50 ns, 30 A
- Manufacturer: ONSEMI
- Product type: Fast & Ultrafast Recovery Rectifier Diodes
- SVHC: Lead (25-Jun-2025)
- No. of Pins: 2 Pin
- Product Range: -
- Qualification: -
- Diode Case Style: SOD-123FL
- Diode Configuration: Single
- Forward Voltage Max: 950mV
- Forward Surge Current: 30A
- Reverse Recovery Time: 50ns
- Average Forward Current: 1A
- Operating Temperature Max: 150°C
- Repetitive Peak Reverse Voltage: 300V
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 0.131 € |
| Current stock | 1000+ |
| Lead time | 30 days |
## Super Fast Surface Mount Rectifiers
## US1AFA-US1MFA
## **Features**
- Glass Passivated Chip Junction
- Low Power Loss, High Efficiency
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- Fast Switching Reverse Recovery Time: 50~75 ns Maximum
- High Surge Capacity
- UL Flammability 94V−0 Classification
- MSL 1 per J−STD−020
- NRV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable
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2<br>1<br>SOD−123FL<br>CASE 425AB<br>**----- End of picture text -----**<br>
- These Devices are Pb−Free, Halogen Free and are RoHS Compliant
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1 2<br>Cathode Anode<br>**----- End of picture text -----**<br>
**MARKING DIAGRAM**
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&Y<br>&ZH*L&G<br>Oo<br>$Y = ON Semiconductor Logo<br>&Z = Assembly Plant Code<br>H*L = Specific Device Code<br>* = A/B/D/F/G/J/K/M<br>&G = 1−Digit Weekly Date Code (Week)<br>**----- End of picture text -----**<br>
## **ORDERING INFORMATION**
See detailed ordering and shipping information on page 2 of this data sheet.
Publication Order Number: **US1MFA/D**
**1**
© Semiconductor Components Industries, LLC, 2015 **December, 2019 − Rev. 2**
## **US1AFA−US1MFA**
**ABSOLUTE MAXIMUM RATINGS** (Values are at TA = 25 ° C unless otherwise noted)
|**ABSOLUT**|**E MAXIMUM RATINGS**(Values are at TA= 25°|C unless|otherwis|e noted)|||||||
|---|---|---|---|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**US1**<br>**AFA**|**US1**<br>**BFA**|**US1**<br>**DFA**|**US1**<br>**FFA**|**US1**<br>**GFA**|**US1**<br>**JFA**|**US1**<br>**KFA**|**US1**<br>**MFA**|**Unit**|
|VRRM|Repetitive Peak Reverse Voltage|50|100|200|300|400|600|800|1000|V|
|VRMS|RMS Reverse Voltage|35|70|140|210|280|420|560|700|V|
|VR|DC Blocking Voltage|50|100|200|300|400|600|800|1000|V|
|IF(AV)|Average Forward Rectified Current|1||||||||A|
|IFSM|Peak Forward Surge Current: 8.3 ms Single Half<br>Sine−Wave Superimposed on Rated Load|30||||||||A|
|TJ|Operating Junction Temperature Range|−55 to +150||||||||°C|
|TSTG|Storage Temperature Range|−55 to +150||||||||°C|
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
**THERMAL CHARACTERISTICS** (Values are at TA = 25 ° C unless otherwise noted)
|**THERMAL**|**CHARACTERISTICS**(Values are at TA= 25°C unless otherwise noted)|||
|---|---|---|---|
|**Symbol**|**Parameter**|**Value**|**Unit**|
|�JL|Typical Thermal Resistance, Junction to Lead|21|°C/W|
|RθJA|Typical Thermal Resistance, Junction to Ambient|153|°C/W|
NOTE: Device mounted at minimum pad.
## **ELECTRICAL CHARACTERISTICS** (Values are at TA = 25 ° C unless otherwise noted)
|**Symbol**|**Parameter**|**Conditions**|**US1**<br>**AFA**|**US1**<br>**BFA**|**US1**<br>**DFA**|**US1**<br>**FFA**|**US1**<br>**GFA**|**US1**<br>**JFA**|**US1**<br>**KFA**|**US1**<br>**MFA**|**Unit**|
|---|---|---|---|---|---|---|---|---|---|---|---|
|VF|Maximum Instantaneous Forward<br>Voltage (Note 1)|IF= 1 A|0.95||||1.30|1.70|||V|
|IR|Maximum Reverse Current at<br>Rated VR|TJ= 25°C|5||||||||�A|
|||TJ= 125°C|150|||||||||
|CJ|Typical Junction Capacitance|VR= 4.0 V,<br>f = 1.0 MHz|20|||||15|||pF|
|Trr|Maximum Reverse Recovery<br>Time|IF= 0.5 A,<br>IR= 1 A,<br>Irr= 0.25 A|50|||||75|||ns|
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse test with PW = 300 � s, 1% duty cycle.
## **ORDERING INFORMATION**
|**ORDERING INFORMATION**||||
|---|---|---|---|
|**Part Number**|**Top Mark**|**Package**|**Shipping**†|
|US1AFA, NRVUS1AFA*|HAL|SOD−123FL<br>(Pb−Free / Halogen Free)|3,000 / Tape & Reel|
|US1BFA, NRVUS1BFA*|HBL|||
|US1DFA, NRVUS1DFA*|HDL|||
|US1FFA, NRVUS1FFA*|HFL|||
|US1GFA, NRVUS1GFA*|HGL|||
|US1JFA, NRVUS1JFA*|HJL|||
|US1KFA, NRVUS1KFA*|HKL|||
|US1MFA, NRVUS1MFA*|HML|||
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
- *NRV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable
**www.onsemi.com**
**2**
**US1AFA−US1MFA**
## **TYPICAL PERFORMANCE CHARACTERISTICS**
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ee ee ee ee ee<br>1 yo Le<br>0.8 nn A< a TJ=125 CS<br>e ee<br>\ ot Re<br>a es ee ee ee |<br>02 \ rr TJ=25<br>0 0001 Le Le<br>80 90 100 110 120 130 140 150 0 20 40 60 80 100 120<br>LEAD TEMPERATURE ( [o] C) PERCENT OF RATED PEAK REVERSE VOLTAGE (%)<br>Figure 1. Maximum Forward Current Derating Figure 2. Typical Reverse Characteristics<br>Voltage<br>( A)<br>AVERAGE FORWARD CURRENT (A)<br>INSTANTANEOUS REVERSE CURRENT<br>**----- End of picture text -----**<br>
**Figure 2. Typical Reverse Characteristics**
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~L_LU35 Fy “Fei<br>30 Ft 8.3 ms Single Half Sine Wave il |—a US1AFA−US1DFA seAn— J)<br>25 a! a<br>20 PNETN ‘je—— US1GFA 2SY<br>oe “— pf ON<br>ae a US1JFA−US1MFA e<br>5 PE EE EEL th or e/aLE L IZsY | |<br>1 10 100 0 0.2 0.4 0.6 0.8 1 1.2 1.4<br>NUMBER OF CYCLES AT 60 Hz FORWARD VOLTAGE (V)<br>CURRENT (A)<br>CURRENT (A)<br>INSTANTANEOUS FORWARD<br>PEAK FORWARD SURGE<br>**----- End of picture text -----**<br>
## **Figure 3. Maximum Non−Repetitive Forward Surge Current**
## **Figure 4. Typical Instantaneous Forward Characteristics**
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40 Ro<br>30 PINTo™~“ aTAIT US1AFA−US1GFA<br>SN<br>20 [ES] im™ Z<br>a ™ Leeee EEN |<br>US1JFA−US1MFA<br>e R<br>; EN mes; ee<br>0.1 1 10 100<br>REVERSE VOLTAGE (V)<br>JUNCTION CAPACITANCE (pF)<br>**----- End of picture text -----**<br>
**Figure 5. Typical Junction Capacitance**
## **Figure 6. Reverse Recovery Time Characteristic and Test Circuit Diagram**
**www.onsemi.com**
**3**
MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS**
**SOD−123FL** CASE 425AB ISSUE O
DATE 31 AUG 2016
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2.90<br>2.70<br> 4.30<br>— -—_ ——<br>1.90 1.40 1.90 1.40<br>1.70<br>i h r aha<br>E+E T T<br> 1.20 1.20<br>a t o k Ae<br>TOP VIEW<br>a LAND PATTERN RECOMMENDATION<br>1.43<br>1.23<br>{jy<br>3.80 0.30<br>Pp 3.40 0.16<br>FRONT VIEW<br>0.85 2.60<br>NOTES:<br>0.35 2.45<br> A. NO INDUSTRY STANDARD APPLIES TO THIS<br> PACKAGE.<br> B. ALL DIMENSIONS ARE IN MILLIMETERS.<br>1.20 C. DIMENSIONS ARE EXCLUSIVE OF BURRS,<br>0.80 MOLD FLASH AND TIE BAR PROTRUSIONS.<br>ft t o<br>BOTTOM VIEW<br>Electronic versions are uncontrolled except when accessed directly from the Document Repository.<br>DOCUMENT NUMBER: 98AON13722G Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.<br>DESCRIPTION: SOD−123FL PAGE 1 OF 1<br>a<br>ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.<br>ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding<br>the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically<br>disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the<br>rights of others.<br>**----- End of picture text -----**<br>
www.onsemi.com
© Semiconductor Components Industries, LLC, 2019
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
## **PUBLICATION ORDERING INFORMATION**
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**1**
Updated at June 8, 2026
onsemi is a premier global supplier of intelligent power and sensing technologies, driving disruptive innovations across the automotive, industrial, and cloud infrastructure markets. Recognized for their commitment to sustainability and reliable supply chains, the company accelerates advancements in vehicle electrification, industrial automation, and 5G networks by solving the industry's most complex design challenges. At the core of their portfolio is an industry-leading selection of discrete semiconductors. This extensive range features thousands of high-performance bipolar transistors, single and dual MOSFETs, and a comprehensive array of diodes, including Zener, Schottky, and fast-recovery rectifiers. Engineered for superior thermal performance and energy efficiency, these foundational components are critical for demanding power conversion, switching, and signal conditioning applications. Beyond essential discretes, onsemi provides a robust suite of advanced power management and circuit protection solutions. Their lineup includes intelligent power modules, single IGBTs, and transient voltage suppression (TVS) diodes designed to safeguard sensitive circuitry. Complimented by integrated passive filters, AC/DC LED driver ICs, and specialized sub-2.4GHz RF transceivers, onsemi equips engineers with the scalable, high-quality technologies needed to build a cleaner, smarter, and more connected world.
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