US1BFA
Fast / Ultrafast Diode, 100 V, 1 A, Single, 950 mV, 50 ns, 30 A
- Manufacturer: ONSEMI
- Product type: Fast & Ultrafast Recovery Rectifier Diodes
- SVHC: Lead (25-Jun-2025)
- No. of Pins: 2 Pin
- Product Range: -
- Qualification: -
- Diode Case Style: SOD-123FL
- Diode Configuration: Single
- Forward Voltage Max: 950mV
- Forward Surge Current: 30A
- Reverse Recovery Time: 50ns
- Average Forward Current: 1A
- Operating Temperature Max: 150°C
- Repetitive Peak Reverse Voltage: 100V
| Delivery and price | |
|---|---|
| Units per pack | 3000 |
| Price | 0.116 € |
| Current stock | 10+ |
| Lead time | 30 days |
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## Super Fast Surface Mount Rectifiers US1AFA-US1MFA
## **Features**
- Glass Passivated Chip Junction
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2<br>1<br>SOD−123FA<br>CASE 425AB<br>**----- End of picture text -----**<br>
- Low Power Loss, High Efficiency
- Fast Switching Reverse Recovery Time: 50~75 ns Maximum
- High Surge Capacity
- UL Flammability 94V−0 Classification
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1 2<br>Cathode Anode<br>**----- End of picture text -----**<br>
- MSL 1 per J−STD−020
- NRV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable
- These Devices are Pb−Free, Halogen Free and are RoHS Compliant
## **MARKING DIAGRAM**
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YYYY<br>ZXXXW<br>YYYY = Binary Calendar Year Code Scheme<br>Z = Assembly Plant Code<br>XXX = Specific Device Code<br>W = Single Digit Week Code<br>**----- End of picture text -----**<br>
## **ORDERING INFORMATION**
|**ORDERING INFORMATION**||||
|---|---|---|---|
|**Part Number**|**Device Code Marking**|**Package**|**Shipping**†|
|US1AFA, NRVUS1AFA*|HAL|SOD−123FA<br>(Pb−Free / Halogen Free)|3,000 / Tape & Reel|
|US1BFA, NRVUS1BFA*|HBL|||
|US1DFA, NRVUS1DFA*|HDL|||
|US1FFA, NRVUS1FFA*|HFL|||
|US1GFA, NRVUS1GFA*|HGL|||
|US1JFA, NRVUS1JFA*|HJL|||
|US1KFA, NRVUS1KFA*|HKL|||
|US1MFA, NRVUS1MFA*|HML|||
- †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
- *NRV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable
Publication Order Number: **US1MFA/D**
**1**
© Semiconductor Components Industries, LLC, 2015 **May, 2026 − Rev. 5**
## **US1AFA−US1MFA**
**ABSOLUTE MAXIMUM RATINGS** (Values are at TA = 25 ° C unless otherwise noted)
|**ABSOLUTE MAXIMUM RATINGS**|**ABSOLUTE MAXIMUM RATINGS**(Values are at TA = 25A = 25= 25°C unless otherwise noted)|C unless otherwise noted)|C unless otherwise noted)|C unless otherwise noted)|||||||
|---|---|---|---|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**US1**<br>**AFA**|**US1**<br>**BFA**|**US1**<br>**DFA**|**US1**<br>**FFA**|**US1**<br>**GFA**|**US1**<br>**JFA**|**US1**<br>**KFA**|**US1**<br>**MFA**|**Unit**|
|VRRM<br>~~a~~|Repetitive Peak Reverse Voltage|50|100|200|300|400|600|800|1000|V|
|VRMS<br>~~a~~|RMS Reverse Voltage|35|70|140|210|280|420|560|700|V|
|VR<br>~~a~~|DC Blocking Voltage|50|100|200|300|400|600|800|1000|V|
|IF(AV)|Average Forward Rectified Current|1||||||||A|
|IFSM<br>~~a~~|Peak Forward Surge Current: 8.3 ms Single Half<br>Sine−Wave Superimposed on Rated Load|30||||||||A|
|TJ<br>~~a~~|Operating Junction Temperature Range<br>~~a~~|−55 to +150<br>~~a~~||||||||°C<br>~~a~~|
|TSTG<br>~~a~~|Storage Temperature Range<br>~~a~~<br>~~a~~|−55 to +150<br>~~a~~<br>~~a~~||||||||°C<br>~~a~~<br>~~a~~|
**THERMAL CHARACTERISTICS** (Values are at TA = 25 ° C unless otherwise noted)
~~a~~ **Symbol Parameter Value Unit** JL Typical Thermal Resistance, Junction to Lead 21 ° C/W ~~a a~~ R θ JA Typical Thermal Resistance, Junction to Ambient 153 ° C/W
NOTE: Device mounted at minimum pad.
## **ELECTRICAL CHARACTERISTICS** (Values are at TA = 25 ° C unless otherwise noted)
|**Symbol**|**Parameter**|**Conditions**|**US1**<br>**AFA**|**US1**<br>**BFA**|**US1**<br>**DFA**|**US1**<br>**FFA**|**US1**<br>**GFA**|**US1**<br>**JFA**|**US1**<br>**KFA**|**US1**<br>**MFA**|**Unit**|
|---|---|---|---|---|---|---|---|---|---|---|---|
|VF|Maximum Instantaneous Forward<br>Voltage (Note 1)|IF= 1 A|0.95||||1.30|1.70|||V|
|IR<br>~~se~~|Maximum Reverse Current at<br>Rated VR<br>~~se~~|TJ= 25°C<br>~~se~~|5<br>~~se~~||||||||A|
|||TJ= 125°C<br>~~se~~<br>~~a~~|150<br>~~se~~|||||||||
|CJ|Typical Junction Capacitance|VR= 4.0 V,<br>f = 1.0 MHz|20|||||15|||pF|
|Trr|Maximum Reverse Recovery<br>Time|IF= 0.5 A,<br>IR= 1 A,<br>Irr= 0.25 A|50|||||75|||ns|
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse test with PW = 300 s, 1% duty cycle. u
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**2**
**US1AFA−US1MFA**
## **TYPICAL PERFORMANCE CHARACTERISTICS**
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—————<br>1 a es<br>0.8 N e~ 40 LE a ae TJ=125 C aEafe<br>0.6 ee ee ee ee<br>NX po<br>a a se ee |<br>eh ee ee<br>02 . a TJ=25<br>PN a po a |<br>0 0001 Le Le tf<br>8 9 100 110 120 130 140 150 0 2 ~3«640~*«‘“t<CSSt<C«itiDSCO<br>LEAD TEMPERATURE ( [o] C) PERCENT OF RATED PEAK REVERSE VOLTAGE (%)<br>Figure 1. Maximum Forward Current Derating Figure 2. Typical Reverse Characteristics<br>Voltage<br>2-135 LI a ee<br>a ee<br>30 all 8.3 ms Single Half Sine Wave ill o L——= US1AFA−US1DFA SsaSen ae<br>25 : ea ee e e a aa ae<br>20 PONTN\ TT eeS US1GFA SA>e A> aia<br>og ~a! a > a Ae<br>US1JFA−US1MFA<br>40 2 nnAAA<br>5 PT TTT ||__——— JTT oor AM———_—LE L I//7AY7 J| i tT<br>1 10 100 0 02 O04 #086 O08 1 12 14<br>NUMBER OF CYCLES AT 60 Hz FORWARD VOLTAGE (V)<br>Figure 3. Maximum Non−Repetitive Forward Surge Figure 4. Typical Instantaneous Forward<br>Current Characteristics<br>ET 50n 100<br>60 NONINOUCTIVE —NONINOUCTIVE a wr 5<br>aoe (-) tAt—++ aan Ee<br>40 Ko (+) [pase | oA ht tt<br>30 a™. J US1AFA−US1GFA {approx} ] |— 2<br>SN (NOTE 2) 025A | oS ee bi ee<br>20 >< TN SNON(ig = hyoscaLoscoreE7 (NOTE 1) ——T (4) 4|<br>ReSSS ~~ > = INDUCTIVEjae Timon = + “10A tng<br>eae i eeneeeseserererenn CNA<br>US1JFA−US1MFA<br>ye Ee! [Tl<br>0 UT ie TienesTOne me. Sousa hrpadencos<br>0.1 1 10 100 1000<br>REVERSE VOLTAGE (V)<br>( A)<br>AVERAGE FORWARD CURRENT (A)<br>INSTANTANEOUS REVERSE CURRENT<br>CURRENT (A)<br>CURRENT (A)<br>INSTANTANEOUS FORWARD<br>PEAK FORWARD SURGE<br>JUNCTION CAPACITANCE (pF)<br>**----- End of picture text -----**<br>
**Figure 2. Typical Reverse Characteristics**
## **Figure 4. Typical Instantaneous Forward Characteristics**
**Figure 5. Typical Junction Capacitance**
## **Figure 6. Reverse Recovery Time Characteristic and Test Circuit Diagram**
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MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS**
**SOD−123FA** CASE 425AB ISSUE A
DATE 11 AUG 2022
**DOCUMENT NUMBER: 98AON13722G DESCRIPTION: SOD−123FA**
Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
**PAGE 1 OF 1**
**onsemi** and are trademarks of Semiconductor Components Industries, LLC dba **onsemi** or its subsidiaries in the United States and/or other countries. **onsemi** reserves the right to make changes without further notice to any products herein. **onsemi** makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. **onsemi** does not convey any license under its patent rights nor the rights of others.
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© Semiconductor Components Industries, LLC, 2016
**onsemi** , , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “ **onsemi** ” or its affiliates and/or subsidiaries in the United States and/or other countries. **onsemi** owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of **onsemi** ’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. **onsemi** reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and **onsemi** makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using **onsemi** products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by **onsemi** . “Typical” parameters which may be provided in **onsemi** data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. **onsemi** does not convey any license under any of its intellectual property rights nor the rights of others. **onsemi** products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use **onsemi** products for any such unintended or unauthorized application, Buyer shall indemnify and hold **onsemi** and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that **onsemi** was negligent regarding the design or manufacture of the part. **onsemi** is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
## **ADDITIONAL INFORMATION**
**TECHNICAL PUBLICATIONS** : **ONLINE SUPPORT** : www.onsemi.com/support **Technical Library:** www.onsemi.com/design/resources/technical−documentation **For additional information, please contact your local Sales Representative at onsemi Website:** www.onsemi.com www.onsemi.com/support/sales
**==> picture [232 x 43] intentionally omitted <==**
Updated at June 8, 2026
onsemi is a premier global supplier of intelligent power and sensing technologies, driving disruptive innovations across the automotive, industrial, and cloud infrastructure markets. Recognized for their commitment to sustainability and reliable supply chains, the company accelerates advancements in vehicle electrification, industrial automation, and 5G networks by solving the industry's most complex design challenges. At the core of their portfolio is an industry-leading selection of discrete semiconductors. This extensive range features thousands of high-performance bipolar transistors, single and dual MOSFETs, and a comprehensive array of diodes, including Zener, Schottky, and fast-recovery rectifiers. Engineered for superior thermal performance and energy efficiency, these foundational components are critical for demanding power conversion, switching, and signal conditioning applications. Beyond essential discretes, onsemi provides a robust suite of advanced power management and circuit protection solutions. Their lineup includes intelligent power modules, single IGBTs, and transient voltage suppression (TVS) diodes designed to safeguard sensitive circuitry. Complimented by integrated passive filters, AC/DC LED driver ICs, and specialized sub-2.4GHz RF transceivers, onsemi equips engineers with the scalable, high-quality technologies needed to build a cleaner, smarter, and more connected world.
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