UMZ1NT1G

Bipolar Transistor Array, Complementary NPN and PNP, 50 V, 50 V, 200 mA, 200 mA, 250 mW

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Manufacturer: ONSEMI
Product type: Bipolar Junction Transistor Arrays - BJT
Transistor Polarity:N and P Complement; Collector Emitter Voltage V(br)ceo:50V; Power Dissipation Pd:250mW; DC Collector Current:200mA; DC Current Gain hFE:200hFE; Transistor Case
MSL: MSL 1 - Unlimited
SVHC: No SVHC (25-Jun-2025)
No. of Pins: 3Pins
Product Range: -
Qualification: -
Transistor Mounting: Surface Mount
Transistor Polarity: Complementary NPN and PNP
Power Dissipation NPN: 250mW
Power Dissipation PNP: 250mW
Transistor Case Style: SC-70
Transition Frequency NPN: 114MHz
Transition Frequency PNP: 114MHz
Operating Temperature Max: 150°C
DC Current Gain hFE Min NPN: 200hFE
DC Current Gain hFE Min PNP: 200hFE
Continuous Collector Current NPN: 200mA
Continuous Collector Current PNP: 200mA
Collector Emitter Voltage Max NPN: 50V
Collector Emitter Voltage Max PNP: 50V

Delivery and price
Units per pack	1500
Price	0.051 €
Current stock	1000+
Lead time	7 days

Datasheet

Updated at March 10, 2026