UMT2222AT106

UMT2222A / SST2222A / MMST2222A 

Transistors 

## NPN Medium Power Transistor (Switching) 

## **UMT2222A / SST2222A / MMST2222A** 

- **Features** 

- 1)  BVCEO > 40V (IC=10mA) 

- 2)  Complements the UMT2907A / SST2907A / MMST2907A. 

## � **Package, marking, and packaging specifications** 

|Part No.|UMT2222A|SST2222A|MMST2222A|
|---|---|---|---|
|Packaging type<br>Marking|UMT3<br>R1P|SST3<br>R1P|SMT3<br>R1P|
|Code|T106|T116|T146|
|Basic ordering unit<br>(pieces)|3000|3000|3000|



## � **Absolute maximum ratings** (Ta = 25°C) 

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Parameter Symbol Limits Unit<br>Collector-base voltage VCBO 75 V<br>Collector-emitter voltage VCEO 40 V<br>Emitter-base voltage VEBO 6 V<br>Collector current IC 0.6 A<br>UMT2222A,SST2222A,<br>MMST2222A 0.2 W<br>Collector power dissipation SST2222A PC 0.35 W ∗<br>Junction temperature Tj 150 ° C<br>Storage temperature Tstg − 55 to  + 150 ° C<br>∗  When mounted on a 7 x 5 x 0.6 mm ceramic board<br>**----- End of picture text -----**<br>


## � **Dimensions** (Unit : mm) 

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UMT2222A<br>(1)  Emitter<br>ROHM  :  UMT3 (2)  Base<br>EIAJ  :  SC-70 (3)  Collector<br>SOT-323<br>SST2222A<br>(1)  Emitter<br>(2)  Base<br>ROHM  :  SST3 (3)  Collector<br>MMST2222A<br>(1)  Emitter<br>ROHM  :  SMT3 (2)  Base<br>EIAJ  :  SC-59 (3)  Collector<br>**----- End of picture text -----**<br>


## � **Electrical characteristics** (Ta = 25°C) 

|Parameter<br>Collector-base breakdown voltage<br>Collector-emitter breakdown voltage<br>Emitter-base breakdown voltage<br>Collector cutoff current<br>Emitter cutoff current<br>Base-emitter saturation voltage<br>Collector-emitter saturation voltage<br>DC current transfer ratio<br>Transition frequency<br>Output capacitance<br>Emitter input capacitance<br>Delay time<br>Rise time<br>Storage time<br>Fall time|Symbol|Min.|Typ.|Max.|Unit|Conditions|
|---|---|---|---|---|---|---|
||BVCBO|75|−|−|V|IC=10µA|
||BVCEO|40|−|−|V|IC=10mA|
||BVEBO|6|−|−|V|IE=10µA|
||ICBO|−|−|100|nA|VCB=60V|
||IEBO|−|−|100|nA|VEB=3V|
||VCE(sat)|−|−|0.3|V|IC/IB=150mA/15mA|
|||−|−|1||IC/IB=500mA/50mA|
||VBE(sat)|0.6|−|1.2|V|IC/IB=150mA/15mA|
|||−|−|2||IC/IB=500mA/50mA|
||hFE|35|−|−|−|VCE=10V , IC=0.1mA|
|||50|−|−||VCE=10V , IC=1mA|
|||75|−|−||VCE=10V , IC=10mA|
|||50|−|−||VCE=1V , IC=150mA|
|||100|−|300||VCE=10V , IC=150mA|
|||40|−|−||VCE=10V , IC=500mA|
||fT|300|−|−|MHz|VCE=20V , IC=−20mA, f=100MHz|
||Cob|−|−|8|pF|VCB=10V , f=100kHz|
||Cib|−|−|25|pF|VEB=0.5V , f=100kHz|
||td|−|−|10|ns|VCC=30V , VBE(OFF)=0.5V , IC=150mA , IB1=15mA|
||tr|−|−|25|ns|VCC=30V , VBE(OFF)=0.5V , IC=150mA , IB1=15mA|
||tstg|−|−|225|ns|VCC=30V , IC=150mA , IB1=−IB2=15mA|
||tf|−|−|60|ns|VCC=30V , IC=150mA , IB1=−IB2=15mA|



Rev.A 1/3 

UMT2222A / SST2222A / MMST2222A 

Transistors 

## � **Electrical characteristic curves** 

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100<br>Ta=25 ° C 600<br>500<br>400<br>50 300<br>200<br>100<br>IB=0 µ A<br>0<br>0 5 10<br>COLLECTOR-EMITTER  VOLTAGE : VCE(V)<br>Fig.1  Grounded emitter output<br>            characteristics<br>Ta = 25 ° C<br>IC / IB = 10<br>0.3<br>0.2<br>0.1<br>0<br>1.0 10 100 1000<br>COLLECTOR  CURRENT : Ic(mA)<br>(mA)<br>COLLECTOR  CURRENT : Ic<br>(V)<br>CE(sat)<br>COLLECTOR  EMITTER  SATURATION  VOLTAGE : V<br>**----- End of picture text -----**<br>


Fig.2  Collector-emitter saturation voltage vs. collector current 

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1000 Ta = 25 ° C<br>VCE = 10V<br>100<br>1V<br>10<br>0.1 1.0 10 100 1000<br>COLLECTOR  CURRENT : Ic(mA)<br>FE<br>DC  CURRENT  GAIN : h<br>**----- End of picture text -----**<br>


Fig.3  DC current gain vs. collector current( Ι ) 

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1000 VCE = 10V<br>Ta = 125 ° C<br>25 ° C<br>100 − 55 ° C<br>10<br>0.1 1.0 10 100 1000<br>COLLECTOR  CURRENT : Ic(mA)<br>FE<br>DC  CURRENT  GAIN : h<br>**----- End of picture text -----**<br>


Fig.4  DC current gain vs. collector current( ΙΙ ) 

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1.8 Ta = 25 ° C<br>1000 Ta = 25 ° C IC / IB = 10<br>VCE = 10V 1.6<br>f = 1kHz<br>1.2<br>100 0.8<br>0.4<br>0<br>1.0 10 100 1000<br>100.1 1.0 10 100 1000 COLLECTOR  CURRENT : Ic(mA)<br>COLLECTOR  CURRENT : Ic(mA)<br>Fig.6  Base-emitter saturation<br>Fig.5  AC current gain vs. collector current             voltage vs. collector current<br>(V)<br>BE(sat)<br>FE<br>AC  CURRENT  GAIN : h<br>BASE  EMITTER  SATURATION  VOLTAGE : V<br>**----- End of picture text -----**<br>


Rev.A 2/3 

UMT2222A / SST2222A / MMST2222A 

## Transistors 

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1.8 Ta = 25 ° C<br>VCE = 10V<br>1.6<br>1.2<br>0.8<br>0.4<br>0<br>1 10 100 1000<br>COLLECTOR  CURRENT : Ic(mA)<br>(V)<br>BE(ON)<br>BASE  EMITTER  VOLTAGE : V<br>**----- End of picture text -----**<br>


Fig.7  Grounded emitter propagation characteristics 

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1000 Ta = 25 ° C<br>VCC = 30V<br>IC = 10IB1 = 10IB2<br>100<br>10<br>1.0 10 100 1000<br>COLLECTOR  CURRENT : Ic(mA)<br>Fig.10  Storage time vs. collector<br>              current<br>100 Ta = 25 ° C<br>100MHz 250MHz 300MHz<br>200MHz<br>10<br>1<br>250MHz<br>0.1<br>1 10 100 1000<br>COLLECTOR  CURRENT : Ic(mA)<br>Fig.13  Gain bandwidth product<br>(ns)<br>STORAGE  TIME : Ts<br>(V)<br>CE<br>COLLECTOR-EMITTER  VOLTAGE : V<br>**----- End of picture text -----**<br>


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1000 Ta = 25 ° C 500 Ta = 25 ° C<br>IC / IB = 10 VCC = 30V<br>IC / IB = 10<br>100<br>100<br>VCC = 30V<br>10V<br>10<br>10 5<br>1.0 10 100 1000 1.0 10 100 1000<br>COLLECTOR  CURRENT : Ic(mA) COLLECTOR  CURRENT : Ic(mA)<br>Fig.8  Turn-on time vs. collector Fig.9  Rise time vs. collector<br>            current             current<br>1000 Ta = 25 ° C 100 Ta = 25 ° C<br>VCC = 30V f = 1MHz<br>IC = 10IB1 = 10IB2<br>Cib<br>100 10 Cob<br>10 1<br>1.0 10 100 1000 0.1 1.0 10 100<br>COLLECTOR  CURRENT : Ic(mA) REVERSE  BIAS  VOLTAGE(V)<br>Fig.11  Fall time vs. collector  Fig.12  Input / output capacitance<br>              current               vs. voltage<br>(ns)<br>(ns)<br>RISE  TIME : tr<br>TURN  ON  TIME : ton<br>FALL  TIME : tf(ns) CAPACITANCE(pF)<br>**----- End of picture text -----**<br>


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Fig.12  Input / output capacitance<br>              vs. voltage<br>**----- End of picture text -----**<br>


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1000 Ta = 25 ° C<br>VCE = 10V<br>100<br>10<br>1.0 10 100 1000<br>COLLECTOR  CURRENT : Ic(mA)<br>(MHz)<br>CURRENT  GAIN-BANDWIDTH  PRODUCT<br>**----- End of picture text -----**<br>


Fig.14  Gain bandwidth product vs. collector current 

3/3 

Rev.A 

Appendix 

Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. 

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Appendix1-Rev2.0