UJ3N065080K3S
JFET Transistor, TO-247, 175 °C
- Manufacturer: ONSEMI
- Product type: JFETs
- SVHC: No SVHC (17-Jan-2023)
- No. of Pins: 3Pins
- Channel Type: N Channel
- Product Range: -
- Power Dissipation: 190W
- Rds(on) Test Voltage: 2V
- Transistor Case Style: TO-247
- Drain Source Voltage Vds: 650V
- Operating Temperature Max: 175°C
- Continuous Drain Current Id: 32A
- MOSFET Module Configuration: Single
- Drain Source On State Resistance: 0.068ohm
- Gate Source Threshold Voltage Max: 11.5V
| Delivery and price | |
|---|---|
| Units per pack | 250 |
| Price | 5.56 € |
| Current stock | 200+ |
| Lead time | 30 days |
## 80mW - 650V SiC Normally-On JFET | UJ3N065080K3S **==> picture [43 x 8] intentionally omitted <==** **----- Start of picture text -----**<br> Datasheet<br>**----- End of picture text -----**<br> ## Description **==> picture [239 x 166] intentionally omitted <==** **----- Start of picture text -----**<br> CASE<br>CASE<br>D (2)<br>G (1)<br>1 2 3 S (3)<br>Part Number Package Marking<br>UJ3N065080K3S TO-247-3L UJ3N065080K3S<br>e s<br>**----- End of picture text -----**<br> United Silicon Carbide, Inc offers the high-performance G3 SiC normallyon JFET transistors. This series exhibits ultra-low on resistance (RDS(ON)) and gate charge (QG) allowing for low conduction and switching loss. The device normally-on characteristics with low RDS(ON) at VGS = 0 V is also ideal for current protection circuits without the need for active control, as well as for cascode operation. ## Features - w Typical on-resistance RDS(on),typ of 80mW - w Voltage controlled - w Maximum operating temperature of 175°C - w Extremely fast switching not dependent on temperature - w Low gate charge - w Low intrinsic capacitance ## Typical Applications - w Over current protection circuits - w DC-AC inverters - w Switch mode power supplies - w Power factor correction modules - w Motor drives - w Induction heating - w RoHS compliant ## **Maximum Ratings** |**Parameter**|**Symbol**|**Test Conditions**|**Value**|**Units**| |---|---|---|---|---| |Drain-source voltage|VDS<br>~~a ee~~<br>~~—————~~|~~ee~~<br>~~—————~~|650<br>~~ee~~<br>~~—————~~|V| |Gate-source voltage|VGS<br>~~—————~~|DC<br>~~—————~~|-20 to +3<br>~~—————~~|V<br>~~a~~| |||AC(1)<br>~~—————~~<br>~~a~~|-20 to +20<br>~~—————~~<br>~~a~~|| |Continuous drain current(2)|ID<br>~~—————~~<br>~~a~~<br>~~a~~<br>~~ae~~|TC= 25°C<br>~~—————~~<br>~~a~~<br>~~ee ee~~|32<br>~~—————~~<br>~~a~~<br>~~ee~~|A<br>~~ee~~| |||TC= 100°C<br>~~a~~<br>~~ee ee~~<br>~~ee~~|24<br>~~a~~<br>~~ee~~|A<br>~~ee~~| |Pulsed drain current(3)|IDM<br>~~a~~<br>~~a~~<br>~~ae~~|TC= 25°C<br>~~a~~<br>~~ee ee~~<br>~~ee~~|72<br>~~a~~<br>~~ee~~|A<br>~~ee~~| |Power dissipation|Ptot<br>~~a~~<br>~~ae~~|TC=25°C<br>~~ee ee~~<br>~~ee~~|190<br>~~ee~~|W<br>~~ee~~| |Maximum junction temperature|TJ,max<br>~~ae~~<br>~~a~~<br>~~ee~~|~~ee~~<br>~~ee~~|175<br>~~ee~~|°C| |Operating and storage temperature|TJ, TSTG<br>~~a ~~<br>~~ee~~<br>~~a~~|~~ee~~<br>~~ee~~|-55 to 175<br>~~ee~~|°C| |Max. lead temperature for soldering,<br>1/8” from case for 5 seconds|TL<br>~~ee~~<br>~~a~~|~~ee~~|250|°C| (1) +20V AC rating applies for turn-on pulses <200ns applied with external RG > 1W. (2) Limited by TJ,max - (3) Pulse width tp limited by TJ,max 1 For more information go to www.unitedsic.com. Rev. B, December 2018 Datasheet ## 80mW - 650V SiC Normally-On JFET | UJ3N065080K3S ## **Electrical Characteristics** (TJ = +25°C unless otherwise specified) ## **Typical Performance - Static** |**Parameter**|**Symbol**|**Test Conditions**|**Value**|**Value**|**Value**|**Units**| |---|---|---|---|---|---|---| ||||**Min**|**Typ**|**Max**|| |Drain-source breakdown voltage|BVDS<br>~~a~~|VGS= - 20V, ID=1mA<br>|650<br>|||V| |Total drain leakage current|ID<br>~~aeee~~|VDS= 650V,<br>VGS= -20V, TJ= 25°C<br>~~eee~~|= 650V,<br>~~eee~~|8<br>~~eee~~|60<br>~~eee~~|mA| |||VDS= 650V,<br>VGS= -20V, TJ= 175°C<br>~~eee~~<br>~~tT~~|= 650V,<br>~~eee~~<br>~~tT~~|30<br>~~eee~~<br>~~tT~~|~~eee~~<br>~~tT~~|| |Total gate leakage current|IG<br>~~eee~~<br>~~Sp~~|VGS=-20V, Tj=25°C<br>~~eee~~<br>~~tT~~<br>~~Sp~~|~~eee~~<br>~~tT~~<br>~~Sp~~|10<br>~~eee~~<br>~~tT~~<br>~~Sp~~|50<br>~~eee~~<br>~~tT~~<br>~~Sp~~|mA| |||VGS=-20V, Tj=175°C<br>~~Sp~~|~~Sp~~|32<br>~~Sp~~|~~Sp~~|| |Drain-source on-resistance|RDS(on)<br>~~Sp~~<br>~~ee~~|VGS=2V, ID=10A,<br>TJ= 25°C<br>~~Sp~~<br>~~tT~~|=10A,<br>~~Sp~~<br>~~tT~~|68<br>~~Sp~~<br>~~tT~~|~~Sp~~<br>~~tT~~|mW| |||VGS=0V, ID=10A,<br>TJ= 25°C<br>~~tT~~<br>~~|~~|=10A,<br>~~tT~~<br>~~|~~|80<br>~~tT~~<br>~~|~~|95<br>~~tT~~<br>~~|~~|| |||VGS=2V, ID=10A,<br>TJ= 175°C<br>~~|~~<br>~~|~~|=10A,<br>~~|~~<br>~~|~~|114<br>~~|~~<br>~~|~~|~~|~~<br>~~|~~|| |||VGS=0V, ID=10A,<br>TJ= 175°C<br>~~|~~<br>~~tT~~|=10A,<br>~~|~~<br>~~tT~~|130<br>~~|~~<br>~~tT~~|~~|~~<br>~~tT~~|| |Gate threshold voltage|VG(th)<br>~~ee~~|VDS= 5V, ID= 20mA<br>~~tT~~|-14<br>~~tT~~|-11.5<br>~~tT~~|-6<br>~~tT~~|V| |Gate resistance|RG<br>~~ee~~<br>~~a~~|f = 1MHz, open drain<br>~~tT~~|~~tT~~|3.7<br>~~tT~~|~~tT~~|W| 2 For more information go to www.unitedsic.com. Rev. B, December 2018 ## 80mW - 650V SiC Normally-On JFET | UJ3N065080K3S Datasheet ## **Typical Performance - Dynamic** |**Parameter**|**symbol**|**Test Conditions**|**Value**|**Value**|**Value**|**Units**| |---|---|---|---|---|---|---| ||||**Min**|**Typ**|**Max**|| |Input capacitance|Ciss<br>~~—~~|VDS= 100V,<br>VGS= -20V,<br>f = 100kHz<br>|= 100V,<br>|630<br>||pF| |Output capacitance|Coss<br>~~—~~||= -20V,<br>|94<br>||| |Reverse transfer capacitance|Crss<br>|||88<br>||| |Effective output capacitance, energy related<br>~~|~~|Coss(er)<br>~~ee~~<br>~~|~~|VDS= 0V to 400V,<br>VGS= -20V<br>~~ee~~|= 0V to 400V,<br>~~ee~~<br>~~ee~~|69<br>~~ee~~<br>~~ee~~|~~ee~~<br>~~ee~~|pF| |Total gate charge<br>~~|~~<br>~~|~~|QG<br>~~ee~~<br>~~|~~<br>~~|~~<br>~~a~~|VDS=400V, ID= 24A,<br>VGS=-18V to 0V<br>~~ee~~<br>~~a~~|~~ee~~<br>~~ee~~<br>~~a~~<br>~~a~~|75<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~a~~|~~ee~~<br>~~ee~~<br>~~ee~~<br>~~a~~|nC<br>~~ee~~| |Gate-drain charge<br>~~|~~<br>~~|~~|QGD<br>~~|~~<br>~~|~~<br>~~a~~||~~ee ~~<br>~~a~~<br>~~a~~|43<br> ~~ee~~<br>~~ee~~<br>~~a~~|~~ee~~<br>~~ee~~<br>~~a~~|| |Gate-source charge<br>~~|~~|QGS<br>~~|~~<br>~~a~~||~~a~~<br>~~a~~|7<br>~~ee ~~<br>~~a~~|~~ee~~<br>~~a~~|| |Turn-on delay time|td(on)<br>~~a~~<br>~~—~~|VDS=400V, ID=24A,<br>Gate Driver =-18V to 0V,<br>RG,EXT= 1W,<br>Inductive Load,<br>FWD: UJ3D06510TS<br>TJ= 25°C<br>~~a~~<br>~~—~~<br>~~|~~<br>~~—~~<br>~~|~~|~~a~~<br>~~—~~<br>~~|~~|6<br>~~a~~<br>~~—~~|~~a~~<br>~~—~~|ns<br>~~|~~| |Rise time|tr<br>~~—~~<br>~~|~~||=24A,<br>~~—~~<br>~~|~~<br>~~|~~<br>~~|~~|25<br>~~—~~<br>~~|~~<br>~~|~~|~~—~~<br>~~|~~<br>~~|~~|| |Turn-off delay time|td(off)<br>~~|~~<br>~~—~~||Gate Driver =-18V to 0V,<br>~~|~~<br>~~|~~<br>~~—~~<br>~~ff~~|14<br>~~|~~<br>~~|~~<br>~~—~~<br>~~ff~~|~~|~~<br>~~|~~<br>~~—~~<br>~~ff~~|| |Fall time|tf<br>~~—~~<br>~~|~~||~~—~~<br>~~ff~~<br>~~ee~~|31<br>~~—~~<br>~~ff~~<br>~~ee~~|~~—~~<br>~~ff~~<br>~~ee~~|| |Turn-on energy<br>~~_—~~|EON<br>~~|~~<br>~~a~~<br>~~_—~~||FWD: UJ3D06510TS<br>~~ee~~<br>~~a~~<br>~~ee~~|149<br>~~ee~~<br>~~a~~<br>~~ee~~|~~ee~~<br>~~a~~<br>~~ee~~|mJ| |Turn-off energy<br>~~_—~~|EOFF<br>~~a~~<br>~~_—~~||~~a~~<br>~~ee~~|183<br>~~a~~<br>~~ee~~|~~a~~<br>~~ee~~|| |Total switching energy<br>~~_—~~|ETOTAL<br>~~_—~~<br>~~—~~<br>~~=~~||~~ee~~<br>~~fy~~<br>~~|~~<br>~~|~~|332<br>~~ee~~<br>~~fy~~|~~ee~~<br>~~fy~~|| |Turn-on delay time|td(on)<br>~~—~~<br>~~=~~|VDS=400V, ID=24A,<br>Gate Driver =-18V to 0V,<br>RG,EXT= 1W,<br>Inductive Load,<br>FWD: UJ3D06510TS<br>TJ= 150°C<br>~~|~~<br>~~|~~|~~fy~~<br>~~|~~<br>~~|~~|6<br>~~fy~~|~~fy~~|ns| |Rise time|tr<br>~~=~~<br>~~—~~<br>~~a~~||=24A,<br>~~|~~<br>~~|~~<br>~~ff~~<br>~~ee~~|24<br>~~ff~~<br>~~ee~~|~~ff~~<br>~~ee~~|| |Turn-off delay time|td(off)<br>~~—~~<br>~~a~~||Gate Driver =-18V to 0V,<br>~~ff~~<br>~~ee~~|14<br>~~ff~~<br>~~ee~~|~~ff~~<br>~~ee~~|| |Fall time<br>~~_—~~|tf<br>~~a~~<br>~~|~~<br>~~_—~~||~~ee ~~<br>~~fy~~<br>~~ee~~|14<br> ~~ee~~<br>~~fy~~<br>~~ee~~|~~ee~~<br>~~fy~~<br>~~ee~~|| |Turn-on energy<br>~~_—~~|EON<br>~~|~~<br>~~_—~~<br>~~a~~||FWD: UJ3D06510TS<br>~~fy~~<br>~~ee~~<br>~~|~~<br>~~|~~|134<br>~~fy~~<br>~~ee~~|~~fy~~<br>~~ee~~|mJ| |Turn-off energy<br>~~_—~~|EOFF<br>~~_—~~<br>~~a~~||~~ee~~<br>~~|~~<br>~~|~~|103<br>~~ee~~|~~ee~~|| |Total switching energy|ETOTAL<br>~~a~~<br>~~|~~||~~|~~<br>~~|~~<br>~~ee~~|237<br>~~ee~~|~~ee~~|| ## **Thermal Characteristics** |**Parameter**|**symbol**|**Test Conditions**|**Value**|**Value**|**Value**|**Units**| |---|---|---|---|---|---|---| ||||**Min**|**Typ**|**Max**|| |Thermal resistance, junction-to-case|RqJC|||0.61|0.79|°C/W| 3 For more information go to www.unitedsic.com. Rev. B, December 2018 80mW - 650V SiC Normally-On JFET | UJ3N065080K3S Datasheet ## **Typical Performance Diagrams** **==> picture [252 x 203] intentionally omitted <==** **----- Start of picture text -----**<br> 80<br>70 Pe<br>60<br>Te<br>50<br>Sees au<br>40<br>Y a Vgs = 2V<br>30 Vgs = 0V<br>Ae a -<br>Vgs= - 2V<br>20 i Aen ae Vgs = -4V<br>Vgs = -6V<br>10<br>fe r Vgs = -8V<br>0 7 2anuaee<br>0 1 2 3 4 5 6 7 8 9 10<br>Drain-Source Voltage, VDS (V)<br> (A)<br>D<br>Drain Current, I<br>**----- End of picture text -----**<br> **==> picture [253 x 203] intentionally omitted <==** **----- Start of picture text -----**<br> 80<br>70 ELT<br>60<br>SRE aE<br>50<br>Te<br>40<br>Ss A Vgs = 2V e<br>30 Vgs = 0V<br>Leb<br>Vgs= - 2V<br>20 aoe<br>Vgs = -4V<br>10 Vgs = -6V<br>9 igew Vgs = -8V<br>0 1 iar<br>0 1 2 3 4 5 6 7 8 9 10<br>Drain-Source Voltage, VDS (V)<br> (A)<br>D<br>Drain Current, I<br>**----- End of picture text -----**<br> _**Figure 1 Typical output characteristics at T J = 55°C**_ _**Figure 2 Typical output characteristics**_ _**at T J = 25°C**_ **==> picture [515 x 228] intentionally omitted <==** **----- Start of picture text -----**<br> 60 1.E-03<br>Vgs = 2V<br>Tj = - 55°C<br>Vgs = 0V<br>50 Tj = 25°C<br>Vgs= - 2V<br>Vgs = -4V 1.E-04 Tj = 125°C<br>40 Vgs = -6V Tj = 175°C<br>Vgs = -8V<br>Vgs = -10V<br>30 = Tee 1.E-05 = EE<br>penace ee<br>Po _<br>20<br>eben oo<br>1.E-06<br>_<br>fee<br>10 Y: | Fee<br>0 ’ | a comand 1.E-07 ee<br>0 1 2 3 4 5 6 7 8 9 10 100 200 300 400 500 600<br>Drain-Source Voltage, VDS (V) Drain-Source Voltage, VDS (V)<br> (A)<br> (A) D<br>D<br>Drain Current, I<br>Drain Leakage Current, I<br>**----- End of picture text -----**<br> _**Figure 3 Typical output characteristics at T J = 175°C**_ _**Figure 4 Typical drain-source leakage at V GS = -20V**_ 4 For more information go to www.unitedsic.com. Rev. B, December 2018 80mW - 650V SiC Normally-On JFET | UJ3N065080K3S Datasheet **==> picture [522 x 487] intentionally omitted <==** **----- Start of picture text -----**<br> 1000 60<br>ee Ciss Tj = - 55°C<br>50<br>Tj = 25°C<br>Tj = 125°C<br>40<br>Tj = 175°C<br>Spence “o<br>100 30<br>Coss<br>—__ a e<br>Crss 20<br>10<br>10 | UL 0 [A]<br>0 100 200 300 400 500 600 -15 -10 -5 0<br>Drain-Source Voltage, VDS (V) Gate-Source Voltage, VGS (V)<br>Figure 5 Typical capacitances at 100kHz Figure 6 Typical transfer characteristics<br>and V GS = -20V at V DS = 5V<br>2.0 300<br>Tj = - 55°C<br>250 Tj = 25°C<br>1.5 Td 32 x Tj = 125°C SIF<br>200 Tj = 175°C<br>FAGEDS?<01Sena a bee<br>1.0 150<br>100<br>0.5 TOT) «= GEEIer-<br>50<br>PE) HtEE<br>0.0 0 +<br>-75 -50 -25 0 25 50 75 100 125 150 175 0 10 20 30 40 50 60 70<br>Junction Temperature, TJ (°C) Drain Current, ID (A)<br> (A)<br>D<br>Capacitance, C (pF)<br>Drain Current, I<br>)<br>W<br> (P.U.)<br> (m<br>DS_ON<br>DS(on)<br>On-Resistance, R<br>On-Resistance, R<br>**----- End of picture text -----**<br> _**Figure 7 Normalized on-resistance vs. temperature at V GS = 0V and I D = 10A**_ _**Figure 8 Typical drain-source on-resistance at V GS = 0V**_ 5 For more information go to www.unitedsic.com. Rev. B, December 2018 80mW - 650V SiC Normally-On JFET | UJ3N065080K3S Datasheet **==> picture [250 x 204] intentionally omitted <==** **----- Start of picture text -----**<br> 0<br>-5<br>-10<br>-15<br>-75 -50 -25 0 25 50 75 100 125 150 175<br>Junction Temperature, Tj (°C)j (°C) (°C)<br> (V)<br>G(th)<br>Threshold Voltage, V<br>**----- End of picture text -----**<br> **==> picture [524 x 483] intentionally omitted <==** **----- Start of picture text -----**<br> 0 16<br>PTTL<br>14<br>12<br>SEPP ry<br>-5<br>a<br>10<br>EP YT<br>8<br>6 OY<br>-10<br>4 a<br>2 a<br>77a<br>-15 0<br>-75 -50 -25 0 25 50 75 100 125 150 175 0 100 200 300 400 500 600 700<br>Junction Temperature, Tj (°C)j (°C) (°C) Drain-Source Voltage, VDS (V)<br>Figure 9 Threshold voltage vs. Tj Figure 10 Typical stored energy in C OSS<br> at V DS = 5V and I D = 20mA at V GS = -20V<br>200 100<br>SFL ==<br>175 1 m s<br>150<br>PCEPIN EE 10 PAAX<br>125 PCOCEN TT CAIN 10 m s<br>100 SCOCCE NET .<br>100 m s<br>75<br>COCA ~<br>1<br>50 ECON 1ms<br>DC 10ms<br>25<br>EE ECEEE EEN<br>0 CECE ENG 0.1 sii<br>-75 -50 -25 0 25 50 75 100 125 150 175 1 10 100 1000<br>Case Temperature, TC (°C) Drain-Source Voltage, VDS (V)<br> (V)<br>G(th)<br>J)<br>m<br> (<br>OSS<br>E<br>Threshold Voltage, V<br> (W)<br>tot<br> (A)<br>D<br>Power Dissipation, P Drain Current, I<br>**----- End of picture text -----**<br> _**Figure 11 Total power Dissipation**_ _**Figure 12 Safe operation area T c = 25°C, Parameter t p**_ 6 For more information go to www.unitedsic.com. Rev. B, December 2018 80mW - 650V SiC Normally-On JFET | UJ3N065080K3S Datasheet **==> picture [525 x 488] intentionally omitted <==** **----- Start of picture text -----**<br> 1.E-04 1.0<br>Tj = - 55°C Tj = - 55°C<br>_ Tj = 25°C 0.8 Tj = 25°C Hj<br>1.E-05<br>Tj = 125°C Tj = 125°C<br>Tj = 175°C<br>Tj = 175°C 0.6<br>PS s Via<br>1.E-06<br>0.4<br>EPNe ji<br>1.E-07<br>0.2<br>Ne<br>a a<br>1.E-08 0.0<br>-20 -15 -10 -5 0 0 1 2 3 4 5 6<br>Gate-Source Voltage, VGS (V) Gate-Source Voltage, VGS (V)<br>Figure 13 Typical gate leakage current Figure 14 Typical gate forward current<br> at V DS = 0V at V DS = 0V<br>3<br>1<br>0<br>mg Epp<br>| SII<br>-3<br>0.1<br>3 D = 0.5 -6 a aaa<br>D = 0.3<br>FE<br>D = 0.1 -9<br>D = 0.05<br>0.01 -12<br>D = 0.02<br>D = 0.01<br>-15<br>a<br>Single Pulse<br>i TTi<br>0.001 -18<br>1.E-06 1.E-05 1.E-04 1.E-03 1.E-02 1.E-01 0 20 40 60 80 100<br>Pulse Time, tp (s) Gate Charge, QG (nC)<br> (A) (A)<br>G G<br>Gate Current, I Gate Current, I<br> (V)<br> (°C/W) GS<br>JC<br>q<br>Gate-Source Voltage, V<br>Thermal Impedance, Z<br>**----- End of picture text -----**<br> _**Figure 15 Maximum transient thermal impedance**_ _**Figure 16 Typical gate charge at V DS = 400V and I D = 24A**_ 7 For more information go to www.unitedsic.com. Rev. B, December 2018 80mW - 650V SiC Normally-On JFET | UJ3N065080K3S Datasheet **==> picture [517 x 496] intentionally omitted <==** **----- Start of picture text -----**<br> 400 600<br>VDD = 400V, VGS = -18V/0V VDD = 400V, VGS = -18V/0V<br>RG = 1W, FWD: UJ3D06510TS 500 ID =24A, TJ = 150°C<br>FWD: UJ3D06510TS<br>300 TJ = 150°C<br>pt te<br>400<br>Etot<br>Eon<br>200 L 300 ae<br>Eoff<br>200<br>100 Jie| (e a Etot<br>Eon<br>100<br>Eoff<br>gee<br>0 | 0 pe<br>0 5 10 15 20 25 30 35 0 2 4 6 8 10<br>Drain Current, ID (A) Gate Resistor, RG ( W )<br>Figure 17 Clamped inductive switching energy Figure 18 Clamped inductive switching<br> vs. drain current at T J = 150°C energy vs. gate resistor R G<br>350<br>Etot<br>300 Eon<br>Eoff<br>Scae es e<br>250 i e ee<br>Fe ]<br>200<br>150<br>yet | ftCett<br>PSI<br>100<br>50 VDD = 400V, VGS = -18V/0V<br>RG = 1W, FWD: UJ3D06510TS<br>0 - 7<br>0 25 50 75 100 125 150 175<br>Junction Temperature, TJ (°C)<br>J) J)<br>m m<br>Switching Energy ( Switching Energy (<br>J)<br>m<br>Switching Energy (<br>**----- End of picture text -----**<br> _**Figure 19 Clamped inductive switching energy vs. junction temperature at I D = 24A**_ 8 For more information go to www.unitedsic.com. Rev. B, December 2018 80mW - 650V SiC Normally-On JFET | UJ3N065080K3S Datasheet ## **Disclaimer** United Silicon Carbide, Inc. reserves the right to change or modify any of the products and their inherent physical and technical specifications without prior notice. United Silicon Carbide, Inc. assumes no responsibility or liability for any errors or inaccuracies within. Information on all products and contained herein is intended for description only. No license, express or implied, to any intellectual property rights is granted within this document. United Silicon Carbide, Inc. assumes no liability whatsoever relating to the choice, selection or use of the United Silicon Carbide, Inc. products and services described herein. 9 For more information go to www.unitedsic.com. Rev. B, December 2018
Updated at April 29, 2026
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