UJ3D1220K2
Silicon Carbide Schottky Diode, Single, 1.2 kV, 20 A, 83 nC, TO-247
- Manufacturer: ONSEMI
- Product type: Silicon Carbide Schottky Diodes
- SVHC: No SVHC (17-Jan-2023)
- No. of Pins: 2 Pin
- Product Range: -
- Qualification: AEC-Q101
- Diode Mounting: Through Hole
- Diode Case Style: TO-247
- Diode Configuration: Single
- Average Forward Current: 20A
- Total Capacitive Charge: 83nC
- Operating Temperature Max: 175°C
- Repetitive Peak Reverse Voltage: 1.2kV
| Delivery and price | |
|---|---|
| Units per pack | 250 |
| Price | 5.99 € |
| Current stock | 200+ |
| Lead time | 30 days |
## 20A -1200V SiC Schottky Diode Rev. B, April 2020 ## DATASHEET ## Description ## UJ3D1220K2 UnitedSiC offers the 3[rd] generation of high performance SiC MergedPiN-Schottky (MPS) diodes. With zero reverse recovery charge and 175°C maximum junction temperature, these diodes are ideally suited for high frequency and high efficiency power systems with minimum cooling requirements. ## Features **==> picture [149 x 135] intentionally omitted <==** **----- Start of picture text -----**<br> CASE CASE<br>1 2<br>1 2<br>**----- End of picture text -----**<br> - w Maximum operating temperature of 175°C - w Easy paralleling - w Extremely fast switching not dependent on temperature - w No reverse or forward recovery - w Enhanced surge current capability, MPS structure - w 100% UIS tested - w AEC-Q101 qualified ## Typical applications - w Power converters Part Number Package Marking UJ3D1220K2 TO-247-2L UJ3D1220K2 ~~———_+—_}—__—~~ - w Industrial motor drives - w Switch mode power supplies - w Power factor correction modules Datasheet: UJ3D1220K2 Rev. B, April 2020 1 ## Maximum Ratings |Parameter|Symbol<br>Value<br>Test Conditions|Units| |---|---|---| |Surgepeak reverse voltage<br>Repetitivepeak reverse voltage, TJ=25°C<br>Non-repetitive forward surge current<br>sine halfwave<br>Maximum DC forward current<br>DC blockingvoltage|VR<br>1200<br>VRRM<br>1200<br>VRSM<br>1200<br>IF<br>20<br>190<br>180<br>TC= 135°C<br>Non-repetitive forward surge current<br>IFSM<br>TC= 110°C, tp= 10ms<br>TC= 25°C, tp= 10ms<br>~~a~~<br>~~eeee~~<br>~~Aed~~<br>~~pF~~|V<br>V<br>V<br>A<br>A| |Repetitive forward surge current<br>sine halfwave, D=0.1|71.9<br>40.9<br>Repetitive forward surge current<br>IFRM<br>TC= 25°C, tp= 10ms<br>TC= 110°C, tp= 10ms<br>~~pF~~|A| |Non-repetitive peak forward current|1300<br>1300<br>IF,max<br>TC= 25°C, tp= 10ms<br>TC= 110°C, tp= 10ms<br>~~pF~~|A| |Soldering temperatures, wavesoldering only<br>allowed at leads<br>Maximumjunction temperature<br>Operatingand storage temperature<br>i2t value<br>Power dissipation|181<br>162<br>205<br>55<br>TJ,max<br>175<br>TJ,TSTG<br>-55 to 175<br>Tsold<br>260<br>1.6mm from case for 10s<br>i2dt<br>TC= 25°C, tp= 10ms<br>TC= 110°C, tp= 10ms<br>Ptot<br>TC= 25°C<br>TC= 135°C<br>~~pF~~<br>~~—a~~<br>~~es~~|°C<br>°C<br>°C<br>A2s<br>W| ## Thermal Characteristics |||||Value||| |---|---|---|---|---|---|---| |Parameter|Symbol|Test Conditions|Min|Typ|Max|Units| |Thermal resistance, junction-to-case|RqJC|||0.56|0.73|°C/W| Datasheet: UJ3D1220K2 Rev. B, April 2020 2 ## Electrical Characteristics (TJ = +25°C unless otherwise specified) ||||Value||| |---|---|---|---|---|---| ||||Typ|Max|| |Forward voltage<br>VF||-<br>-<br>-<br>IF= 20A, TJ=25°C<br>IF= 20A, TJ=150°C<br>IF= 20A, TJ=175°C|1.52|1.7|V| ||||2.15||| ||||2.25||| |Reverse current<br>IR||-<br>-<br>VR=1200V, TJ=175°C<br>VR=1200V, TJ=25°C|18|190|mA| ||||500||| |QC<br>Total capacitive charge(1)||VR=800V|83||nC| |Total capacitance<br>C||VR=1V, f = 1MHz<br>VR=400V, f = 1MHz<br>VR=800V, f = 1MHz|810||pF| ||||75||| ||||69||| |EC<br>(1) Qcis independent on TJ, diF/dt, and IFas shown in the application note USCi_AN0011.<br>Typical Performance Diagrams<br>Capacitance stored energy<br>0<br>10<br>20<br>30<br>40<br>Forward Current, IF (A)<br>- 55°C<br>25°C<br>100°C<br>150°C<br>175°C<br>EE<br>ee<br>y~~ee~~<br>Ye<br>~~ea~~<br>~~—_~~||24.5<br>mJ<br>as shown in the application note USCi_AN0011.<br>VR=800V<br>- 55°C<br>25°C<br>100°C<br>150°C<br>175°C<br>0<br>20<br>40<br>60<br>80<br>100<br>120<br>140<br>Forward Current, IF (A)<br>- 55°C<br>25°C<br>100°C<br>150°C<br>175°C<br>EE<br>7<br>e<br>Lg<br>iff|<br>27a<br>a<br>cae|||| ||EE||||| ||EE<br>ee<br>y~~ee~~<br>Ye||||| ||- 55°C<br>25°C<br>100°C<br>y~~ee~~<br>Ye<br>~~ea~~<br>~~—_~~||||| ||100°C<br>150°C<br>175°C<br>Ye<br>~~ea~~<br>~~—_~~||||| ||~~ea~~||||| (1) Qc is independent on TJ, diF/dt, and IF as shown in the application note USCi_AN0011. Figure 1. Typical forward characteristics Figure 2. Typical forward characteristics in surge current Datasheet: UJ3D1220K2 Rev. B, April 2020 3 **==> picture [541 x 511] intentionally omitted <==** **----- Start of picture text -----**<br> 1.E-0310 [-3] 250<br>- 55°C 225<br>— 25°C a 200<br>1.E-0410 [-4] 125°C<br>-- ra 175 NO<br>175°C<br>150<br>1.E-0510 [-5] aaa, 125 Ne<br>100<br>75<br>“aaa NO<br>1.E-0610 [-6]<br>50<br>aan ae oN<br>25<br>Tl< LonaA INa<br>1.E-0710 [-7] 0<br>500 600 700 800 900 1000 1100 1200 25 50 75 100 125 150 175<br>Reverse Voltage, VR (V) TC (°C)<br>Figure 3. Typical reverse characteristics Figure 4. Power dissipation<br>225 1<br>D = 0.1<br>200<br>175 SLdd D = 0.3D = 0.5 =<br>D = 0.7<br>es<br>150<br>D = 1.0<br>125 SS ,<br>0.1 D = 0.5<br>100 TP S : D = 0.3<br>75 Te NS D = 0.1<br>poate D = 0.05<br>50<br>D = 0.02<br>25 NS<br>Single Pulse<br>0 0.01<br>25 50 75 100 125 150 175 1.E-05 1.E-04 1.E-03 1.E-02 1.E-01<br>TC ( ° C) Time , t (s)<br>(W)<br>(A)<br>R Tot<br>Reverse Current, I Power Disspiation, P<br>(°C/W)<br>(A)<br>Forward Current, IF Max. Thermal Impedance, ZJCq<br>**----- End of picture text -----**<br> Figure 5. Diode forward current Figure 6. Maximum transient thermal impedance Datasheet: UJ3D1220K2 Rev. B, April 2020 4 **==> picture [243 x 202] intentionally omitted <==** **----- Start of picture text -----**<br> 1200<br>1000<br>pf |<br>800<br>PN<br>600 Nee<br>400<br>po EN<br>200<br>PN<br>ct<br>0<br>0.1 1 10 100 1000<br>Reverse Voltage, VR (V)<br>Capacitance, C (pF)<br>**----- End of picture text -----**<br> Figure 7. Capacitance vs. reverse voltage at 1MHz **==> picture [255 x 202] intentionally omitted <==** **----- Start of picture text -----**<br> 120<br>100<br>aS<br>80<br>ao<br>60<br>a are<br>40<br>4<br>QC = 0𝑉𝑅 𝐶 𝑉𝑑𝑉<br>20<br>fo<br>0 AR<br>0 200 400 600 800 1000 1200<br>Reverse Voltage, VR (V)<br>(nC)<br>C<br>Q<br>**----- End of picture text -----**<br> Figure 8. Typical capacitive charge vs. reverse voltage **==> picture [255 x 202] intentionally omitted <==** **----- Start of picture text -----**<br> 60<br>50<br>pt tT tt<br>40 et Ptts<br>ae<br>30<br>ae<br>20<br>ery<br>10 |ee<br>=Atnnannee<br>0<br>0 200 400 600 800 1000 1200<br>Reverse Voltage, VR (V)<br>J)<br>m<br>(<br>C<br>E<br>**----- End of picture text -----**<br> Figure 9. Typical capacitance stored energy vs. reverse voltage Datasheet: UJ3D1220K2 Rev. B, April 2020 5 ## Disclaimer UnitedSiC reserves the right to change or modify any of the products and their inherent physical and technical specifications without prior notice. UnitedSiC assumes no responsibility or liability for any errors or inaccuracies within. Information on all products and contained herein is intended for description only. No license, express or implied, to any intellectual property rights is granted within this document. UnitedSiC assumes no liability whatsoever relating to the choice, selection or use of the UnitedSiC products and services described herein. Datasheet: UJ3D1220K2 Rev. B, April 2020 6
Updated at April 28, 2026
onsemi is a premier global supplier of intelligent power and sensing technologies, driving disruptive innovations across the automotive, industrial, and cloud infrastructure markets. Recognized for their commitment to sustainability and reliable supply chains, the company accelerates advancements in vehicle electrification, industrial automation, and 5G networks by solving the industry's most complex design challenges. At the core of their portfolio is an industry-leading selection of discrete semiconductors. This extensive range features thousands of high-performance bipolar transistors, single and dual MOSFETs, and a comprehensive array of diodes, including Zener, Schottky, and fast-recovery rectifiers. Engineered for superior thermal performance and energy efficiency, these foundational components are critical for demanding power conversion, switching, and signal conditioning applications. Beyond essential discretes, onsemi provides a robust suite of advanced power management and circuit protection solutions. Their lineup includes intelligent power modules, single IGBTs, and transient voltage suppression (TVS) diodes designed to safeguard sensitive circuitry. Complimented by integrated passive filters, AC/DC LED driver ICs, and specialized sub-2.4GHz RF transceivers, onsemi equips engineers with the scalable, high-quality technologies needed to build a cleaner, smarter, and more connected world.
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