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UJ3D06560KSD
Silicon Carbide Schottky Diode, Dual Common Cathode, 650 V, 60 A, 144 nC, TO-247
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- Manufacturer: ONSEMI
- Product type: Silicon Carbide Schottky Diodes
- SVHC: No SVHC (17-Jan-2023)
- No. of Pins: 3 Pin
- Product Range: -
- Qualification: AEC-Q101
- Diode Mounting: Through Hole
- Diode Case Style: TO-247
- Diode Configuration: Dual Common Cathode
- Average Forward Current: 60A
- Total Capacitive Charge: 144nC
- Operating Temperature Max: 175°C
- Repetitive Peak Reverse Voltage: 650V
| Delivery and price | |
|---|---|
| Units per pack | 5 |
| Price | 10.29 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
**Related Buy Spice Contact Learn Devices Online Models Sales More** ## 650V 60A SiC Merged PiN-Schottky Diode Revision C, January 2019 ## D ATA S H E E T ## UJ3D06560KSD UJ3DO6560KSD ## Description United Silicon Carbide, Inc. offers the 3rd generation of high performance SiC Merged-PiN-Schottky (MPS) diodes. With zero reverse recovery charge and 175°C maximum junction temperature, these diodes are ideally suited for high frequency and high efficiency power systems with minimum cooling requirements. ## Features - 175°C maximum operating junction temperature - Easy paralleling - Extremely fast switching not dependent on temperature - No reverse or forward recovery - Enhanced surge current capability, MPS structure - Excellent thermal performance, Ag sintered - 100% UIS tested - AEC-Q101 qualified ## Typical applications Part Number Package Marking UJ3D06560KSD TO-247-3L UJ3D06560KSD ~~——|__}___~~ - Power converters - Industrial motor drives - Switching-mode power supplies - Power factor correction modules **Datasheet: UJ3D0650KSD** **Date: 01/25/2019** 1 **Related Buy Spice Contact Learn Devices Online Models Sales More** ## Maximum Ratings |Maximum Ratings||||| |---|---|---|---|---| |Paramater|Symbol<br>~~ee~~<br>~~ee~~|Test Conditions<br>~~ee~~|Value (Leg/<br>Device)<br>~~ee~~<br>~~ee~~|Units| |DC blocking voltage|VR<br>~~ee~~<br>~~ee~~|~~ee~~|650<br>~~ee~~<br>~~ee~~|V| |Repetitive peak reverse voltage, Tj=25ºC|VRRM<br>~~ee~~<br>~~ee~~<br>~~ee~~|~~ee~~|650<br>~~ee~~<br>~~ee~~|V| |Surge peak reverse voltage|VRSM<br>~~ee~~<br>~~ee~~<br>~~ee~~||650<br>~~ee~~|V| |Maximum DC forward current|IF<br>~~ee~~<br>~~ee~~<br>~~—~~|TC= 140ºC<br>~~-_——}——~~|30/60<br>~~-_——}——~~|A| |Non-repetitive forward surge current sine halfwave|IFSM<br>~~ee~~<br>~~—~~|TC= 25ºC, tp= 10ms<br>~~-_——}——~~|165/330<br>~~-_——}——~~<br>~~ee~~|A<br>~~ee~~<br>~~ee~~| |||TC= 110ºC, tp= 10ms<br>~~-_——}——~~<br>~~ee~~|150/300<br>~~-_——}——~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|| |Repetitive forward surge current sine halfwave, D=0.1|IFRM<br>~~— ~~|TC= 25ºC, tp= 10ms<br> ~~-_——}——~~<br>~~ee~~<br>~~ee~~|107.2/214.4<br>~~-_——}——~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|A<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~| |||TC= 110ºC, tp= 10ms<br>~~ee~~<br>~~ee~~|66.1/132.2<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|| |Non-repetitive peak forward current|IF, max|TC= 25ºC, tp= 10μs<br>~~ee~~|1250/2500<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|A<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~| |||TC= 110ºC, tp= 10μs<br>~~ee~~<br>~~ee~~|1250/2500<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|| |i2t value<br>~~_~~|∫i2dt<br>~~_~~|TC= 25ºC, tp= 10ms<br>~~ee~~<br>~~ee~~|136/544<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|A2s<br>~~ee~~<br>~~ee~~<br>~~ee~~| |||TC= 110ºC, tp= 10ms<br>~~ee~~<br>~~ee~~<br>|112/448<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>|| |Diode dV/dt ruggedness<br>~~_~~|dV/dt<br>~~_~~|VR= 0 - 650V<br>~~ee~~<br>|200<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>|V/ns<br>~~ee~~| |Power dissipation<br>~~_~~|Ptot<br>~~_-_—~;-—~~<br>~~ee~~|TC= 25ºC<br>~~ee~~<br>~~-_—~;-—~~<br>|288.5/577<br>~~ee~~<br>~~ee~~<br>~~-_—~;-—~~<br>~~ee~~<br>|W| |||TC= 140ºC<br>~~-_—~;-—~~<br>~~ee~~<br>|67.3/134.6<br>~~ee~~<br>~~-_—~;-—~~<br>~~ee~~<br>~~ee~~<br>|| |Maximum junction temperature<br>~~_~~|TJ, max<br>~~_-_—~;-—~~<br>~~ee~~|~~-_—~;-—~~<br>~~ee~~<br>|175<br>~~ee~~<br>~~-_—~;-—~~<br>~~ee~~<br>~~ee~~<br><br>~~ee~~|ºC<br>~~ee~~| |Operating and storage temperature|TJ, TSTG<br>~~ee~~|~~ee~~|-55 to 175<br>~~ee~~<br>~~ee~~<br>~~ee~~|ºC<br>~~ee~~| |Soldering temperatures, wavesoldering only allowed at<br>leads|Tsold|1.6mm from case for 10s|260<br>~~ee~~|ºC<br>~~ee~~| **Datasheet: UJ3D0650KSD** **Date: 01/25/2019** 2 **Related Buy Spice Contact Learn Devices Online Models Sales More** ## Electrical Characterists |Electrical Characterists||||||| |---|---|---|---|---|---|---| |Parameter|Symbol|Test Conditions|Value (Leg/Device)|||Units| ||||Min<br>~~re~~|Typ<br>~~re~~|Max<br>~~re~~|| |Forward voltage|VF<br>~~aee~~|IF= 30A/60A, TJ= 25ºC<br>~~ee~~|-<br>~~eee~~|1.5<br>~~eee~~|1.7<br>~~eee~~|V| ||~~aee~~<br>~~|~~|IF= 30A/60A, TJ=<br>150ºC<br>~~ee~~<br>~~fF~~|-<br>~~eee~~<br>~~fF~~<br>~~f~~|1.77<br>~~eee~~<br>~~ft~~|2.10<br>~~eee~~<br>~~ft~~|| ||~~ee~~<br>~~|~~|IF= 30A/60A, TJ=<br>175ºC<br>~~ee ~~<br>~~fF~~|-<br> ~~eee~~<br>~~fF~~<br>~~f~~|1.85<br>~~eee~~<br>~~ft~~|2.25<br>~~eee~~<br>~~ft~~|| |Reverse current|IR<br>~~|~~|VR= 650V, TJ= 25ºC<br>~~fF~~|-<br>~~fF~~<br>~~f~~|30/60<br>~~ft~~|370/740<br>~~ft~~|μA| ||~~|~~|VR= 650V, TJ= 175ºC<br>~~fF~~|-<br>~~fF~~<br>~~f~~|390/780<br>~~ft~~|-<br>~~ft~~|| |Total capacitive charge (3)|QC<br>~~a~~<br>~~ee~~|VR= 400V<br>~~a~~<br>~~ee ee~~|-<br>~~ee~~|72/144<br>~~ee~~|-<br>~~ee~~|nC| |Total capacitance|C<br>~~a ~~<br>~~ee~~|VR= 1V, f = 1MHz<br> ~~a~~<br>~~ee ee~~|-<br>~~ee~~|990/<br>1980<br>~~ee~~|-<br>~~ee~~|PF| ||~~ee~~<br>~~a~~|VR= 300V, f = 1MHz<br>~~ee ee~~<br>~~a~~<br>~~a~~|-<br>~~ee~~<br>~~a~~|117/234<br>~~ee~~<br>~~a~~|-<br>~~ee~~|| ||~~a~~|VR= 600V, f = 1MHz<br>~~a~~<br>~~a~~<br>~~a~~|-<br>~~a~~<br>~~a~~|101/202<br>~~a~~|-|| |Capacitance stored energy|EC|VR= 400V|-|10.5/21|-|μJ| (1) QC is independent on TJ, diF/dt, and IF as shown in the application note USCi_AN0011 ## Thermal characteristics |Parameter<br>Thermal characteristics|Symbol|Test Conditions|Value (Leg/Device)|Value (Leg/Device)|Value (Leg/Device)|Units| |---|---|---|---|---|---|---| ||||Min|Typ|Max|| |Thermal resistance, junction -<br>case|RθJC||-|0.4/0.2|0.52/0.26|ºC/W| **Datasheet: UJ3D0650KSD** **Date: 01/25/2019** 3 **Related Buy Spice Contact Learn Devices Online Models Sales More** **==> picture [547 x 597] intentionally omitted <==** **----- Start of picture text -----**<br> 60 160<br>- 55°C<br>- 55°C<br>140 25°C<br>50 25°C aca ia<br>100°C<br>100°C 120<br>150°C<br>40 150°C<br>100 175°C<br>175°C<br>30 80<br>60<br>20 n /a O fgh<br>Per leg 40<br>10 Per leg<br>20<br>i) if<br>0 0<br>SED Aneee ayOD [A]<br>0 0.5 1 1.5 2 2.5 3 0 1 2 3 4 5 6<br>Forward Voltage, VF (V) Forward Voltage, VF (V)<br>Figure 1. Typical forward characteristics Figure 2. Typical forward characteristics in<br>surge current<br>1.E-0310 [-3] 300<br>- 55°C Per leg Per leg<br> 25°C 250<br>1.E-0410 [-4] = 125°C TTT} ATT<br>175°C 200<br>1.E-0510 [-5] 150<br>pe 7 ee Nee<br>100<br>1.E-0610 [-6] | LN<br>50<br>A LETTS<br>1.E-0710 [-7] 0<br>200 250 300 350 Le 400 450 500 550 600 | 650 ) 25 Lees 50 75 100 125 150 175<br>Reverse Voltage, VR (V) TC (°C)<br>Figure 3. Typical reverse characteristics Figure 4. Power dissipation<br>(A) (A)<br>F F<br>Forward Current, I Forward Current, I<br> (W)<br> (A) Tot<br>R<br>Reverse Current, I Power Disspiation, P<br>**----- End of picture text -----**<br> **Datasheet: UJ3D0650KSD** **Date: 01/25/2019** 4 **Related Buy Spice Contact Learn Devices Online Models Sales More** **==> picture [551 x 614] intentionally omitted <==** **----- Start of picture text -----**<br> 300 1<br>D = 0.1<br>Per leg Per leg<br>D = 0.3<br>250<br>D = 0.5<br>D = 0.7<br>of Si Si<br>200 D = 1.0<br>D = 0.5<br>150 0.1<br>D = 0.3<br>D = 0.1<br>100<br>D = 0.05<br>D = 0.02<br>50<br>Single Pulse<br>0 S SeS. S 0.01 7<br>25 50 75 100 125 150 175 1.E-05 1.E-04 1.E-03 1.E-02 1.E-01<br>TC (°C) Time , t (s)<br>Figure 5. Diode forward current Figure 6. Maximum transient thermal<br>impedance<br>1400 100<br>90<br>1200 Per leg<br>Per leg 80<br>1000 eeT L 70 qT ee e<br>ee 60<br>800 eecee<br>50<br>PN]<br>600<br>40<br>400 ee . en es 30 rra [AA| | tllf<br>20<br>200<br>PN 10 Fee tener —<br>0 ih, 0 ‘A<br>0.1 1 10 100 1000 0 100 200 300 400 500 600 700<br>Reverse Voltage, VR (V) Reverse Voltage, VR (V)<br>Figure 7. Capacitance vs. reverse voltage at Figure 8. Typical capacitive charge vs. reverse<br>1MHz voltage<br> (°C/W)<br> (A) JC<br>F θ<br>Forward Current,I Max. Thermal Impedance, Z<br> (nC)<br>C<br>Q<br>Capacitance, C (pF)<br>**----- End of picture text -----**<br> **Datasheet: UJ3D0650KSD** **Date: 01/25/2019** 5 **Related Buy Spice Contact Learn Devices Online Models Sales More** **==> picture [263 x 277] intentionally omitted <==** **----- Start of picture text -----**<br> 30<br>25<br>Pt ty |<br>Per leg<br>Pt<br>20<br>| Ly<br>obo<br>15<br>10<br>PEP EY<br>5<br>ap 4nee<br>7A<br>0<br>0 100 200 300 400 500 600 700<br>Reverse Voltage, VR (V)<br>Figure 9. Typical capacitance stored energy vs.<br>reverse voltage<br>J)<br>µ<br> (<br>C<br>E<br>**----- End of picture text -----**<br> ## Disclaimer United Silicon Carbide, Inc. reserves the right to change or modify any of the products and their inherent physical and technical specifications without prior notice. United Silicon Carbide, Inc. assumes no responsibility or liability for any errors or inaccuracies within. Information on all products and contained herein is intended for description only. No license, express or implied, to any intellectual property rights is granted within this document. United Silicon Carbide, Inc. assumes no liability whatsoever relating to the choice, selection or use of the United Silicon Carbide, Inc. products and services described herein. **Datasheet: UJ3D0650KSD** **Date: 01/25/2019** 6
Updated at April 28, 2026
onsemi is a premier global supplier of intelligent power and sensing technologies, driving disruptive innovations across the automotive, industrial, and cloud infrastructure markets. Recognized for their commitment to sustainability and reliable supply chains, the company accelerates advancements in vehicle electrification, industrial automation, and 5G networks by solving the industry's most complex design challenges. At the core of their portfolio is an industry-leading selection of discrete semiconductors. This extensive range features thousands of high-performance bipolar transistors, single and dual MOSFETs, and a comprehensive array of diodes, including Zener, Schottky, and fast-recovery rectifiers. Engineered for superior thermal performance and energy efficiency, these foundational components are critical for demanding power conversion, switching, and signal conditioning applications. Beyond essential discretes, onsemi provides a robust suite of advanced power management and circuit protection solutions. Their lineup includes intelligent power modules, single IGBTs, and transient voltage suppression (TVS) diodes designed to safeguard sensitive circuitry. Complimented by integrated passive filters, AC/DC LED driver ICs, and specialized sub-2.4GHz RF transceivers, onsemi equips engineers with the scalable, high-quality technologies needed to build a cleaner, smarter, and more connected world.
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