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UJ3D06516TS
Silicon Carbide Schottky Diode, Single, 650 V, 16 A, 38 nC, TO-220
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- Manufacturer: ONSEMI
- Product type: Silicon Carbide Schottky Diodes
- SVHC: No SVHC (17-Jan-2023)
- No. of Pins: 2 Pin
- Product Range: -
- Qualification: AEC-Q101
- Diode Mounting: Through Hole
- Diode Case Style: TO-220
- Diode Configuration: Single
- Average Forward Current: 16A
- Total Capacitive Charge: 38nC
- Operating Temperature Max: 175°C
- Repetitive Peak Reverse Voltage: 650V
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 2.76 € |
| Current stock | 100+ |
| Lead time | 30 days |
Datasheet
## Gen-III | 16A - 650V SiC Schottky Diode | UJ3D06516TS **.** Datasheet **.** ## Description United Silicon Carbide, Inc. offers the 3[rd] generation of high performance SiC Merged-PiN-Schottky (MPS) diodes. With zero reverse recovery charge and 175°C maximum junction temperature, these diodes are ideally suited for high frequency and high efficiency power systems with minimum cooling requirements. **==> picture [88 x 113] intentionally omitted <==** **----- Start of picture text -----**<br> CASE<br> CASE<br>1 2<br>1 2<br>**----- End of picture text -----**<br> |Part Number|Package|Marking| |---|---|---| |UJ3D06516TS|TO-220-2L|UJ3D06516TS| ## Features - w 175°C maximum operating junction temperature - w Easy paralleling - w Extremely fast switching not dependent on temperature - w No reverse or forward recovery ## Typical Applications - w Power converters - w Industrial motor drives - w Switching-mode power supplies - w Power factor correction modules - w Enhanced surge current capability, MPS structure - w Excellent thermal performance, Ag sintered - w 100% UIS tested - w AEC-Q101 qualified ## **Maximum Ratings** |**Parameter**|**Symbol**|**Test Conditions**|**Value**|**Units**| |---|---|---|---|---| |DC blocking voltage|VR<br>~~pp~~|~~es~~<br>~~pp~~|650<br>~~es~~|V| |Repetitive peak reverse voltage, Tj=25°C|VRRM<br>~~pp~~<br>~~es~~|~~es~~<br>~~pp~~<br>~~es~~|650<br>~~es~~<br>~~es~~|V| |Surge peak reverse voltage|VRSM<br>~~es~~<br>~~ne~~|~~es~~<br>~~ee~~|650<br>~~es~~<br>~~ee~~|V| |Maximum DC forward current|IF<br>~~es~~<br>~~ne~~<br>~~eee~~|TC= 152°C<br>~~es~~<br>~~ee~~<br>~~eee~~|16<br>~~es~~<br>~~ee~~<br>~~eee~~|A| |Non-repetitive forward surge current<br>sine halfwave|IFSM<br>~~ne~~<br>~~eee~~<br>~~ee~~|TC= 25°C, tp= 10ms<br>~~ee~~<br>~~eee~~|100<br>~~ee~~<br>~~eee~~|A<br>~~ee~~| |||TC= 110°C, tp=10ms<br>~~ee~~<br>~~eee~~<br>~~ee ee~~|90<br>~~ee~~<br>~~eee~~<br>~~ee~~|| |Repetitive forward surge current<br>sine halfwave, D=0.1|IFRM<br>~~eee~~<br>~~ee~~|TC= 25°C, tp= 10ms<br>~~eee~~<br>~~ee~~<br>~~ee ee~~|65.9<br>~~eee~~<br>~~ee~~<br>~~ee~~|A<br>~~ee~~| |||TC= 110°C, tp=10ms<br>~~ee~~<br>~~ee ee~~|40.7<br>~~ee~~<br>~~ee~~|| |Non-repetitive peak forward current|IF,max<br>~~ee~~<br>~~ee~~<br>~~ee~~|TC= 25°C, tp=10ms<br>~~ee ee~~<br>~~es~~<br>~~ee~~|550<br>~~ee~~<br>~~es~~<br>~~ee~~|A<br>~~ee~~| |||TC= 110°C, tp=10ms<br>~~es~~<br>~~ee~~<br>~~ee ee~~|550<br>~~es~~<br>~~ee~~<br>~~ee~~|| |i2t value|i2dt<br>~~ee~~<br>~~ee~~<br>|TC= 25°C, tp=10ms<br>~~ee~~<br>~~ee~~<br>~~ee ee~~|50<br>~~ee~~<br>~~ee~~<br>~~ee~~|A2s| |||TC= 110°C, tp=10ms<br>~~ee~~<br>~~ee ee~~<br>~~ee~~|40<br>~~ee~~<br>~~ee~~|| |Power dissipation|PTot<br>~~ee~~<br>~~a~~|TC= 25°C<br>~~ee ee~~<br>~~a~~<br>~~ee~~|230.8<br>~~ee~~|W| |||TC= 152°C<br>~~a~~<br>~~ee~~|35.4|| |Maximum junction temperature|TJ,max<br>~~a ~~<br>~~a~~|~~a~~<br> ~~ee~~<br>~~a~~|175|°C| |Operating and storage temperature|TJ, TSTG<br>~~a~~|~~a~~|-55 to 175|°C| |Soldering temperatures, wavesoldering only<br>allowed at leads|Tsold<br>~~Ff~~|1.6mm from case for<br>10s<br>~~Ff~~|260<br>~~Ff~~|°C| For more information go to www.unitedsic.com. Rev. B, January 2018 1 ## Gen-III | 16A - 650V SiC Schottky Diode | UJ3D06516TS **.** Datasheet **.** ## **Electrical Characteristics** TJ = +25°C unless otherwise specified |**Parameter**|**Symbol**|**Test Conditions**|**Min**<br>**Typ**<br>**Max**<br>**Units**<br>**Value**|**Min**<br>**Typ**<br>**Max**<br>**Units**<br>**Value**| |---|---|---|---|---| ||||**Min**|| |Forward voltage<br>~~SS~~<br>~~ee~~|VF<br>~~SS~~<br>~~es~~<br>~~pt~~<br>~~ee~~|IF=16A, TJ=25°C<br>~~SS~~|-<br>~~SS~~<br>~~es~~|1.5<br>1.7<br>1.8<br>2.1<br>1.9<br>2.25<br>V<br>~~SS~~<br>~~es~~<br>~~pt~~<br>~~ee~~| |||IF=16A, TJ=150°C<br>~~SS~~<br>~~es~~|-<br>~~SS~~<br>~~es~~<br>~~es~~|| |||IF=16A, TJ=175°C<br>~~SS~~<br>~~es~~<br>~~pt~~<br>~~ee~~|-<br>~~SS~~<br>~~es~~<br>~~es~~<br>~~pt~~<br>~~ee~~|| |Reverse current<br>~~SS~~<br>~~ee~~<br>~~ee~~|IR<br>~~SS~~<br>~~pt~~<br>~~ee~~<br>~~ee~~|VR=650V, Tj=25°C<br>~~SS~~<br>~~pt~~<br>~~ee~~|-<br>~~SS~~<br>~~pt~~<br>~~ee~~|16<br>100<br>58<br>mA<br>~~SS~~<br>~~pt~~<br>~~ee~~<br>~~ee~~| |||VR=650V, TJ=175°C<br>~~pt~~<br>~~ee~~<br>~~ee~~|-<br>~~pt~~<br>~~ee~~<br>~~ee~~|| |Total capacitive charge(1)<br>~~ee~~<br>~~ee~~|QC<br>~~ee~~<br>~~ee~~|VR=400V<br>~~ee~~<br>~~ee~~|~~ee~~<br>~~ee~~|38<br>nC<br>~~ee~~<br>~~ee~~| |Total capacitance<br>~~ee~~<br>~~SS~~<br>~~es~~|C<br>~~ee~~<br>~~SS~~<br>~~ee~~<br>~~es~~<br>~~es~~|VR=1V, f=1MHz<br>~~ee ~~<br>~~SS~~|~~ee~~<br>~~SS~~<br>~~es~~|500<br>62<br>56<br>pF<br>~~ee~~<br>~~SS~~<br>~~ee~~<br>~~es~~<br>~~es~~| |||VR=300V, f=1MHz<br>~~SS~~<br>~~ee~~|~~SS~~<br>~~ee~~<br>~~es~~<br>~~es~~|| |||VR=600V, f=1MHz<br>~~SS~~<br>~~ee~~<br>~~es~~<br>~~ee Ps~~|~~SS~~<br>~~ee~~<br>~~es~~<br>~~es~~<br>~~es~~<br>~~Ps~~|| |Capacitance stored energy<br>~~SS~~<br>~~es~~|EC<br>~~SS~~<br>~~es~~<br>~~es~~|VR=400V<br>~~SS~~<br>~~es~~<br>~~ee Ps~~|~~SS~~<br>~~es~~<br>~~es~~<br>~~Ps~~|5.6<br>mJ<br>~~SS~~<br>~~es~~<br>~~es~~| (1) Qc is independent on Tj, diF/dt, and IF as shown in the application note USCi_AN0011. ## **Thermal characteristics** |**Parameter**|**symbol**|**Test Conditions**|**Min**<br>**Typ**<br>**Max**<br>**Value**<br>**Units**|**Min**<br>**Typ**<br>**Max**<br>**Value**<br>**Units**| |---|---|---|---|---| ||||**Min**|| |Thermal resistance, junction - case|RqJC|||0.5<br>0.65<br>°C/W| ## **Typical Performance** **==> picture [515 x 225] intentionally omitted <==** **----- Start of picture text -----**<br> 32 120<br>- 55°C<br>28 - 55°C<br>pe v7 25°C LA<br>100<br> 25°C<br>100°C<br>24 100°C<br>150°C bE 80 150°C LG<br>20 175°C rea 175°C Wht<br>16 60<br>n /abyl Ca<br>12<br>40<br>8<br>oar one eae<br>20<br>4 any dee [iy<br>Tow<br>0 | lUC 0 UC A<br>0 0.5 1 1.5 2 2.5 3 0 1 2 3 4 5 6<br>Forward Voltage, VF (V) Forward Voltage, VF (V)<br> (A) (A)<br>F F<br>Forward Current, I Forward Current, I<br>**----- End of picture text -----**<br> _**Figure 1 Typical forward characteristics**_ _**Figure 2 Typical forward characteristics in surge current**_ For more information go to www.unitedsic.com. Rev. B, January 2018 2 Gen-III | 16A - 650V SiC Schottky Diode | UJ3D06516TS **.** Datasheet **.** **==> picture [254 x 228] intentionally omitted <==** **----- Start of picture text -----**<br> 1.E-11 0 3-3 -3<br>- 55°C<br>25°C<br>1.E-11 0 4-4 -4 125°C TY]<br>175°C<br>1.E-11 0 5-5 -5 wey<br>wie<br>1.E-11 0 6-6 -6 AL<br>1.E-11 0 7-7 -7 leypanapana A<br>200 250 300 350 400 450 500 550 600 650<br>Reverse Voltage, VR (V) R (V) (V)<br> (A) R<br>R<br>Reverse Current, I<br>**----- End of picture text -----**<br> **==> picture [521 x 546] intentionally omitted <==** **----- Start of picture text -----**<br> 1.E-11 0 3-3 -3 240<br>- 55°C<br>25°C 200<br>1.E-11 0 4-4 -4 125°C TY] NEE<br>175°C 160<br>1.E-11 0 5-5 -5 wey 120 PN<br>wie EON<br>80<br>1.E-11 0 6-6 -6 AL PON<br>40<br>1.E-11 0 7-7 -7 leypanapana A 0 ceeeXeCLOTS<br>200 250 300 350 400 450 500 550 600 650 25 50 75 100 125 150 175<br>Reverse Voltage, VR (V) R (V) (V) TC (°C)<br>Figure 3 Typical reverse characteristics Figure 4 Power dissipation<br>200 1<br>D = 0.1<br>180<br>D = 0.3<br>160 D = 0.5<br>D = 0.7<br>140<br>D = 1.0 0.1<br>120<br>D = 0.5<br>100<br>D = 0.3<br>80<br>D = 0.1<br>0.01<br>60 D = 0.05<br>D = 0.02<br>40<br>Single Pulse<br>20 poetsSe /|<br>0 ooe SY er 0.001 T e<br>25 50 75 100 125 150 175 1.E-06 1.E-04 1.E-02<br>TC (°C) Time , t (s)<br> (W)<br> (A) R Tot<br>Reverse Current, I Power Disspiation, P<br> (°C/W)<br> (A)F JC q<br>Forward Current, I Max. Thermal Impedance, Z<br>**----- End of picture text -----**<br> _**Figure 5 Diode forward current**_ _**Figure 6 Maximum transient thermal impedance**_ For more information go to www.unitedsic.com. Rev. B, January 2018 3 Gen-III | 16A - 650V SiC Schottky Diode | UJ3D06516TS **.** Datasheet **.** **==> picture [518 x 225] intentionally omitted <==** **----- Start of picture text -----**<br> 600 60<br>500 SET] 50 OE<br>400 PON 40 Ee<br>300 30<br>NSE) pa<br>200 20<br>PN<br>100 10 QC = 0𝑉𝑅 𝐶 𝑉𝑑𝑉<br>NJ fo<br>0 0<br>Sel ee<br>0.1 1 10 100 1000 0 100 200 300 400 500 600 700<br>Reverse Voltage, VR (V) Reverse Voltage, VR (V)<br> (nC)<br>C<br>Q<br>Capacitance, C (pF)<br>**----- End of picture text -----**<br> _**Figure 7 Capacitance vs. reverse voltage at 1MHz**_ _**Figure 8 Typical capacitive charge vs. reverse voltage**_ **==> picture [251 x 225] intentionally omitted <==** **----- Start of picture text -----**<br> 14<br>12<br>PT TTT Te<br>SET<br>10<br>S000 40<br>8<br>6 EAT<br>4 PTA<br>TAT TT<br>2<br>Ame<br>0<br>0 100 200 300 400 500 600 700<br>Reverse Voltage, VR (V)<br>J)<br>m<br> (<br>C<br>E<br>**----- End of picture text -----**<br> _**Figure 9 Typical capacitance stored energy vs. reverse voltage**_ For more information go to www.unitedsic.com. Rev. B, January 2018 4 Gen-III | 16A - 650V SiC Schottky Diode | UJ3D06516TS **.** Datasheet **.** ## **Disclaimer** United Silicon Carbide, Inc. reserves the right to change or modify any of the products and their inherent physical and technical specifications without prior notice. United Silicon Carbide, Inc. assumes no responsibility or liability for any errors or inaccuracies within. Information on all products and contained herein is intended for description only. No license, express or implied, to any intellectual property rights is granted within this document. United Silicon Carbide, Inc. assumes no liability whatsoever relating to the choice, selection or use of the United Silicon Carbide, Inc. products and services described herein. For more information go to www.unitedsic.com. Rev. B, January 2018 5
Updated at April 28, 2026
onsemi is a premier global supplier of intelligent power and sensing technologies, driving disruptive innovations across the automotive, industrial, and cloud infrastructure markets. Recognized for their commitment to sustainability and reliable supply chains, the company accelerates advancements in vehicle electrification, industrial automation, and 5G networks by solving the industry's most complex design challenges. At the core of their portfolio is an industry-leading selection of discrete semiconductors. This extensive range features thousands of high-performance bipolar transistors, single and dual MOSFETs, and a comprehensive array of diodes, including Zener, Schottky, and fast-recovery rectifiers. Engineered for superior thermal performance and energy efficiency, these foundational components are critical for demanding power conversion, switching, and signal conditioning applications. Beyond essential discretes, onsemi provides a robust suite of advanced power management and circuit protection solutions. Their lineup includes intelligent power modules, single IGBTs, and transient voltage suppression (TVS) diodes designed to safeguard sensitive circuitry. Complimented by integrated passive filters, AC/DC LED driver ICs, and specialized sub-2.4GHz RF transceivers, onsemi equips engineers with the scalable, high-quality technologies needed to build a cleaner, smarter, and more connected world.
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