UJ3D06512TS
Silicon Carbide Schottky Diode, Single, 650 V, 12 A, 29 nC, TO-220
- Manufacturer: ONSEMI
- Product type: Silicon Carbide Schottky Diodes
- SVHC: No SVHC (17-Jan-2023)
- No. of Pins: 2 Pin
- Product Range: -
- Qualification: AEC-Q101
- Diode Mounting: Through Hole
- Diode Case Style: TO-220
- Diode Configuration: Single
- Average Forward Current: 12A
- Total Capacitive Charge: 29nC
- Operating Temperature Max: 175°C
- Repetitive Peak Reverse Voltage: 650V
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 2.2 € |
| Current stock | 50+ |
| Lead time | 30 days |
## 12A - 650V SiC Schottky Diode Rev. A, June 2019 ## DATASHEET ## Description ## UJ3D06512TS **==> picture [155 x 169] intentionally omitted <==** **----- Start of picture text -----**<br> CASE<br>CASE<br>1 2<br>1 2<br>**----- End of picture text -----**<br> United Silicon Carbide, Inc. offers the 3[rd] generation of high performance SiC Merged-PiN-Schottky (MPS) diodes. With zero reverse recovery charge and 175°C maximum junction temperature, these diodes are ideally suited for high frequency and high efficiency power systems with minimum cooling requirements. ## Features - w Maximum operating temperature of 175°C - w Easy paralleling - w Extremely fast switching not dependent on temperature - w No reverse or forward recovery - w Enhanced surge current capability, MPS structure - w Excellent thermal performance, Ag sintered - w 100% UIS tested - w AEC-Q101 qualified ## Typical applications - w Power converters |Part Number|Package|Marking| |---|---|---| |UJ3D06512TS|TO-220-2L|UJ3D06512TS| - w Industrial motor drives - w Switch mode power supplies - w Power factor correction modules Datasheet: UJ3D06512TS Rev. A, June 2019 1 ## Maximum Ratings |Parameter|Symbol<br>Value<br>Test Conditions|Units| |---|---|---| |Repetitivepeak reverse voltage, TJ=25°C<br>Non-repetitive forward surge current<br>sine halfwave<br>Maximum DC forward current<br>DC blockingvoltage<br>Surgepeak reverse voltage|VR<br>650<br>VRRM<br>650<br>VRSM<br>650<br>IF<br>12<br>81<br>70<br>Non-repetitive forward surge current<br>IFSM<br>TC= 110°C, tp= 10ms<br>TC= 25°C, tp= 10ms<br>TC= 153°C<br>~~a~~<br>~~eeee~~<br>~~Aed~~<br>~~pF~~|V<br>V<br>V<br>A<br>A| |Repetitive forward surge current<br>sine halfwave, D=0.1|53<br>32.5<br>Repetitive forward surge current<br>IFRM<br>TC= 25°C, tp= 10ms<br>TC= 110°C, tp= 10ms<br>~~pF~~|A| |Non-repetitive peak forward current|480<br>480<br>IF,max<br>TC= 25°C, tp= 10ms<br>TC= 110°C, tp= 10ms<br>~~pF~~|A| |Power dissipation<br>i2t value<br>Soldering temperatures, wavesoldering only<br>allowed at leads<br>Maximumjunction temperature<br>Operatingand storage temperature|32.8<br>24.5<br>187.5<br>27.5<br>TJ,max<br>175<br>TJ,TSTG<br>-55 to 175<br>Tsold<br>260<br>Ptot<br>TC= 25°C<br>TC= 153°C<br>i2dt<br>TC= 25°C, tp= 10ms<br>TC= 110°C, tp= 10ms<br>1.6mm from case for 10s<br>~~pF~~<br>~~—a~~<br>~~es~~|°C<br>°C<br>°C<br>W<br>A2s| ## Thermal Characteristics |||||Value||| |---|---|---|---|---|---|---| |Parameter|Symbol|Test Conditions|Min|Typ|Max|Units| |Thermal resistance, junction-to-case|RqJC|||0.6|0.8|°C/W| Datasheet: UJ3D06512TS Rev. A, June 2019 2 ## Electrical Characteristics (TJ = +25°C unless otherwise specified) |||||Value||| |---|---|---|---|---|---|---| |Parameter|Symbol|Test Conditions|Min|Typ|Max|Units| |||IF= 12A, TJ=25°C|-|1.5|1.7|| |Forward voltage|VF|IF= 12A, TJ=150°C|-|1.8|2.1|V| |||IF= 12A, TJ=175°C|-|1.9|2.25|| |||VR=650V, TJ=25°C|-<br>=25°C|1.4|80|| |Reverse current|IR|VR=650V, TJ=175°C|-<br>=175°C|12||mA| |Total capacitive charge(1)|QC|VR=400V||29||nC| |||VR=1V, f = 1MHz||392||| |Total capacitance|C|VR=300V, f = 1MHz||48||pF| |||VR=600V, f = 1MHz||42||| |Capacitance stored energy|EC|VR=400V||4.4||mJ| (1) Qc is independent on TJ, diF/dt, and IF as shown in the application note USCi_AN0011. ## Typical Performance Diagrams **==> picture [536 x 203] intentionally omitted <==** **----- Start of picture text -----**<br> 24 60<br>- 55°C<br>- 55°C<br>20 50 25°C<br> 25°C wie LL<br>100°C<br>100°C<br>16 40 150°C<br>150°C<br>Wa Vee<br>175°C<br>175°C<br>12 30<br>a fig<br>8 20<br>f F<br>4 10<br>0 ny Anne | 0 b 7 Annanf<br>0 0.5 1 1.5 2 2.5 3 0 1 2 3 4 5<br>Forward Voltage, VF (V) Forward Voltage, VF (V)<br>(A) (A)<br>F F<br>Forward Current, I Forward Current, I<br>**----- End of picture text -----**<br> Figure 1. Typical forward characteristics Figure 2. Typical forward characteristics in surge current Datasheet: UJ3D06512TS Rev. A, June 2019 3 **==> picture [257 x 203] intentionally omitted <==** **----- Start of picture text -----**<br> 1.E-0410 [-4]<br>- 55°C<br> 25°C<br>1.E-0510 [-5] 125°C<br>5<br>175°C<br>1.E-0610 [-6]<br>5 Y,<br>CL<br>1.E-0710 [-7]<br>LZ<br>1.E-0810 [-8]<br>200 250 300 350 400 450 500 550 600 650<br>Reverse Voltage, VR (V)<br>(A)<br>R<br>Reverse Current, I<br>**----- End of picture text -----**<br> Figure 3. Typical reverse characteristics **==> picture [257 x 203] intentionally omitted <==** **----- Start of picture text -----**<br> 160<br>D = 0.1<br>140 D = 0.3<br>2<br>D = 0.5<br>120<br>D = 0.7<br>D = 1.0<br>100<br>80 SS<br>60<br>40<br>20 PSN<br>0<br>25 50 75 100 125 150 175<br>TC ( ° C)<br>(A)<br>F<br>Forward Current, I<br>**----- End of picture text -----**<br> Figure 5. Diode forward current **==> picture [257 x 510] intentionally omitted <==** **----- Start of picture text -----**<br> 200<br>180<br>160<br>140 PN<br>120<br>100<br>80<br>60 See<br>Gee<br>40<br>20<br>PN<br>0<br>25 50 75 100 125 150 175<br>TC (°C)<br>Figure 4. Power dissipation<br>1<br>Hl TT<br>D = 0.5<br>D = 0.3<br>0.1<br>D = 0.1<br>D = 0.05<br>D = 0.02<br>Single Pulse<br>0.01<br>1.E-05 1.E-04 1.E-03 1.E-02 1.E-01<br>Time , t (s)<br>(W)<br>Tot<br>Power Disspiation, P<br>(°C/W)<br>JC<br>q<br>Max. Thermal Impedance, Z<br>**----- End of picture text -----**<br> Figure 6. Maximum transient thermal impedance Datasheet: UJ3D06512TS Rev. A, June 2019 4 **==> picture [538 x 202] intentionally omitted <==** **----- Start of picture text -----**<br> 600 45<br>40<br>500<br>35<br>400 ee 30 See<br>25<br>300 Ne ee ee eee<br>20<br>200 Nee 15 SESE<br>10 QC = 0𝑉𝑅 𝐶 𝑉𝑑𝑉<br>100<br>PN foo<br>5<br>0 ee 0 f+ ++—<br>0.1 1 10 100 1000 0 100 200 300 400 500 600 700<br>Reverse Voltage, VR (V) Reverse Voltage, VR (V)<br>(nC)<br>C<br>Q<br>Capacitance, C (pF)<br>**----- End of picture text -----**<br> Figure 7. Capacitance vs. reverse voltage at 1MHz Figure 8. Typical capacitive charge vs. reverse voltage **==> picture [253 x 202] intentionally omitted <==** **----- Start of picture text -----**<br> 12<br>-LLLLLL<br>10<br>py<br>8<br>pO<br>6<br>740m<br>4<br>2 Zap 4nnn<br>7anna<br>0<br>0 100 200 300 400 500 600 700<br>Reverse Voltage, VR (V)<br>J)<br>m<br>(<br>C<br>E<br>**----- End of picture text -----**<br> Figure 9. Typical capacitance stored energy vs. reverse voltage Datasheet: UJ3D06512TS Rev. A, June 2019 5 ## Disclaimer United Silicon Carbide, Inc. reserves the right to change or modify any of the products and their inherent physical and technical specifications without prior notice. United Silicon Carbide, Inc. assumes no responsibility or liability for any errors or inaccuracies within. Information on all products and contained herein is intended for description only. No license, express or implied, to any intellectual property rights is granted within this document. United Silicon Carbide, Inc. assumes no liability whatsoever relating to the choice, selection or use of the United Silicon Carbide, Inc. products and services described herein. Datasheet: UJ3D06512TS Rev. A, June 2019 6
Updated at April 28, 2026
onsemi is a premier global supplier of intelligent power and sensing technologies, driving disruptive innovations across the automotive, industrial, and cloud infrastructure markets. Recognized for their commitment to sustainability and reliable supply chains, the company accelerates advancements in vehicle electrification, industrial automation, and 5G networks by solving the industry's most complex design challenges. At the core of their portfolio is an industry-leading selection of discrete semiconductors. This extensive range features thousands of high-performance bipolar transistors, single and dual MOSFETs, and a comprehensive array of diodes, including Zener, Schottky, and fast-recovery rectifiers. Engineered for superior thermal performance and energy efficiency, these foundational components are critical for demanding power conversion, switching, and signal conditioning applications. Beyond essential discretes, onsemi provides a robust suite of advanced power management and circuit protection solutions. Their lineup includes intelligent power modules, single IGBTs, and transient voltage suppression (TVS) diodes designed to safeguard sensitive circuitry. Complimented by integrated passive filters, AC/DC LED driver ICs, and specialized sub-2.4GHz RF transceivers, onsemi equips engineers with the scalable, high-quality technologies needed to build a cleaner, smarter, and more connected world.
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