UF1G

**UF1A – UF1M** 

Taiwan Semiconductor 

## **1A, 50V - 1000V High Efficient Rectifier** 

## FEATURES 

- AEC-Q101 qualified available 

- Glass passivated chip junction 

- Excellent high temperature switching 

- Soft recovery characteristics 

- RoHS Compliant 

- Halogen-free according to IEC 61249-2-21 

## APPLICATIONS 

- DC to DC converter 

- Switching mode converters and inverters 

- Freewheeling application 

|KEY PARAMETERS|KEY PARAMETERS|KEY PARAMETERS|
|---|---|---|
|PARAMETER|VALUE|UNIT|
|IF|1|A|
|VRRM|50 - 1000|V|
|IFSM|30|A|
|TJ MAX|150|°C|
|Package|DO-204AL (DO-41)||
|Configuration|Single die||



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## MECHANICAL DATA 

- Case: DO-204AL (DO-41) 

- Molding compound meets UL 94V-0 flammability rating 

- Terminal: Pure tin plated leads, solderable per J-STD-002 

- Meet JESD 201 class 2 whisker test 

- Polarity: Indicated by cathode band 

- Weight: 0.330g (approximately) 

## **DO-204AL (DO-41)** 

## Cathode —_\q— Anode 

|ABSOLUTE MAXIMUM RATINGS (TA= 25°C unless otherwise noted)<br>~~a~~<br>~~esss~~|ABSOLUTE MAXIMUM RATINGS (TA= 25°C unless otherwise noted)<br>~~a~~<br>~~esss~~|ABSOLUTE MAXIMUM RATINGS (TA= 25°C unless otherwise noted)<br>~~a~~<br>~~esss~~|ABSOLUTE MAXIMUM RATINGS (TA= 25°C unless otherwise noted)<br>~~a~~<br>~~esss~~|ABSOLUTE MAXIMUM RATINGS (TA= 25°C unless otherwise noted)<br>~~a~~<br>~~esss~~|ABSOLUTE MAXIMUM RATINGS (TA= 25°C unless otherwise noted)<br>~~a~~<br>~~esss~~|ABSOLUTE MAXIMUM RATINGS (TA= 25°C unless otherwise noted)<br>~~a~~<br>~~esss~~|ABSOLUTE MAXIMUM RATINGS (TA= 25°C unless otherwise noted)<br>~~a~~<br>~~esss~~|ABSOLUTE MAXIMUM RATINGS (TA= 25°C unless otherwise noted)<br>~~a~~<br>~~esss~~|ABSOLUTE MAXIMUM RATINGS (TA= 25°C unless otherwise noted)<br>~~a~~<br>~~esss~~|
|---|---|---|---|---|---|---|---|---|---|
|PARAMETER<br>~~es~~|SYMBOL UF1A UF1B UF1D UF1G UF1J UF1K UF1M UNIT<br>~~es~~|SYMBOL UF1A UF1B UF1D UF1G UF1J UF1K UF1M UNIT<br>~~es~~|SYMBOL UF1A UF1B UF1D UF1G UF1J UF1K UF1M UNIT<br>~~es~~<br>~~es~~|SYMBOL UF1A UF1B UF1D UF1G UF1J UF1K UF1M UNIT<br>~~es~~<br>~~ss~~|SYMBOL UF1A UF1B UF1D UF1G UF1J UF1K UF1M UNIT<br>~~es~~<br>~~ss~~|SYMBOL UF1A UF1B UF1D UF1G UF1J UF1K UF1M UNIT<br>~~es~~<br>~~ss~~|SYMBOL UF1A UF1B UF1D UF1G UF1J UF1K UF1M UNIT<br>~~es~~|SYMBOL UF1A UF1B UF1D UF1G UF1J UF1K UF1M UNIT<br>~~es~~|SYMBOL UF1A UF1B UF1D UF1G UF1J UF1K UF1M UNIT<br>~~es~~|
|Marking code on the device<br>~~es~~|~~es~~|UF1A<br>~~es~~<br>~~ss~~|UF1B<br>~~es ~~<br>~~es~~<br>~~ss~~|UF1D<br> ~~ss~~<br>~~es~~|UF1G<br>~~ss~~<br>~~es~~|UF1J<br>~~ss~~<br>~~es~~|UF1K<br>~~es~~|UF1M<br>~~es~~|~~es~~|
|Repetitive peak reverse voltage<br>~~ee~~|VRRM<br>~~ee~~|50<br>~~ee~~<br>~~ss~~|100<br>~~ee~~<br>~~ss~~<br>~~D~~|200<br>~~ee~~<br>~~D~~|400<br>~~ee~~|600<br>~~ee~~|800<br>~~ee~~|1000<br>~~ee~~|V<br>~~ee~~|
|Reverse voltage, total rms value<br>~~ee~~|VR(RMS)<br>~~ee~~|35<br>~~ss~~<br>~~ee~~|70<br>~~ss~~<br>~~ee~~<br>~~D~~|140<br>~~ee~~<br>~~D~~|280<br>~~ee~~|420<br>~~ee~~|560<br>~~ee~~|700<br>~~ee~~|V<br>~~ee~~|
|Forward current|IF|1<br>~~D~~|||||||A|
|Surge peak forward current,<br>8.3ms single half sine wave<br>superimposed on ratedload<br>~~ee~~|IFSM<br>~~ee~~|30<br>~~ee~~|||||||A<br>~~ee~~|
|Junction temperature<br>~~es~~<br>~~es~~|TJ<br>~~es~~<br>~~ee~~|-55 to +150<br>~~es~~<br>~~ee~~|||||||°C<br>~~es~~|
|Storage temperature<br>~~es~~|TSTG<br>~~ee~~|-55 to +150<br>~~ee~~|||||||°C|



1 Version: G2104 

**UF1A – UF1M** (i Taiwan Semiconductor 

## SEMICONDUCTOR(i 

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|||||
|---|---|---|---|
|THERMAL PERFORMANCE|
|PARAMETER|SYMBOL|TYP|UNIT|
|Junction-to-lead thermal resistance|RӨJL|15|°C/W|
|Junction-to-ambient thermal resistance|RӨJA|60|°C/W|

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ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) 

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|||||||||
|---|---|---|---|---|---|---|---|
|PARAMETER|CONDITIONS|SYMBOL|TYP|MAX|UNIT|
|UF1A|
|UF1B|
|-|1.0|V|
|UF1D|
|Forward voltage|[(1)]|UF1G IF = 1A, TJ = 25°C|VF|
|UF1J|
|UF1K|-|1.7|V|
|UF1M|
|Reverse current @ rated VR(2)|TJ = 25°C|IR|-|5|µA|
|TJ = 125°C|-|150|µA|
|Junction capacitance|1MHz, VR = 4.0V|CJ|17|-|pF|
|UF1A|
|UF1B|
|-|50|ns|
|UF1D|
|Reverse recovery time|UUF1J F1G|[I]|I|[F ]|rr = 0.25A|[= 0.5A, I][R ][= 1.0A, ]|trr|
|UF1K|-|75|ns|
|UF1M|

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## **Notes:** 

1. Pulse test with PW = 0.3ms 

2. Pulse test with PW = 30ms 

## ORDERING INFORMATION 

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|||||
|---|---|---|---|
|ORDERING CODE|[(1)(2)]|PACKAGE|PACKING|
|UF1x|DO-204AL (DO-41)|5,000 / Tape & Reel|
|UF1x A0G|DO-204AL (DO-41)|3,000 / Ammo box|
|UF1xH|DO-204AL (DO-41)|5,000 / Tape & Reel|
|UF1xHA0G|DO-204AL (DO-41)|3,000 / Ammo box|

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## **Notes:** 

1. “x” defines voltage from 50V (UF1A) to 1000V (UF1M) 

2. “H” means AEC-Q101 qualified 

2 Version: G2104 

6 a —_—_$_$_____ **UF1A – UF1M** Taiwan Semiconductor 

## CHARACTERISTICS CURVES 

(TA = 25°C unless otherwise noted) 

## **Fig.1 Forward Current Derating Curve** 

## **Fig.2 Typical Junction Capacitance** 

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2 100<br>UF1J-UF1M<br>C Lu s COUT<br>1 10 UF1A-UF1G<br>ELLE LLL<br>f=1.0MHz<br>Vsig=50mVp-p<br>0 1 CIC<br>25 50 75 100 125 150 0.1 1 10 100<br>AMBIENT TEMPERATURE (°C)  REVERSE VOLTAGE (V)<br>      Fig.3 Typical Reverse Characteristics     Fig.4 Typical Forward Characteristics<br>1000 10<br>UF1A-UF1G UF1J-UF1M  TJ=125 ° C<br>100 UF1A-UF1G<br>10<br>= o 1 C EELLL A<br>1<br>SSS SS a a a<br>UF1J-UF1M<br>0.1 TJ=25 ° C TJ=100 ° C Pulse width 300μs<br>1% duty cycle<br>0.01 ===SS 5aee SSS= 0.1 ie fs ane ae<br>0.5 0.7 0.9 1.1 1.3 1.5 1.7 1.9<br>10 20 30 40 50 60 70 80 90 100<br>PERCENT OF RATED PEAK REVERSE VOLTAGE (%)   FORWARD VOLTAGE (V)<br>      Fig.5 Maximum Non-Repetitive Forward Surge Current<br>35<br>30 8.3ms single half sine wave<br>25 ieST ee<br>20<br>S h<br>15 CT<br>10<br>i<br>5 TL<br>0 ee<br>1 10 100<br>NUMBER OF CYCLES AT 60 Hz<br>CAPACITANCE (pF)<br>AVERAGE FORWARD CURRENT (A)<br>INSTANTANEOUS REVERSE CURRENT (µA)  INSTANTANEOUS FORWARD CURRENT (A)<br>PEAK FORWARD SURGE CURRENT (A)<br>**----- End of picture text -----**<br>


3 Version: G2104 

**UF1A – UF1M** [pg Taiwan Semiconductor 

SEMICONDUCTOR[pg 

## CHARACTERISTICS CURVES 

(TA = 25°C unless otherwise noted) 

## **Fig.6 Reverse Recovery Time Characteristic and Test Circuit Diagram** 

4 Version: G2104 

**UF1A – UF1M** SEMICONDUCTOR[i Taiwan Semiconductor 

## PACKAGE OUTLINE DIMENSIONS 

**DO-204AL (DO-41)** 

## MARKING DIAGRAM 

P/N = Marking Code G = Green Compound YWW = Date Code F = Factory Code 

5 Version: G2104 

**UF1A – UF1M** TAIWANSEMICONDUCTOR(i Taiwan Semiconductor 

## Notice 

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Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. 

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 

6 Version: G2104