UCLAMP3301D.TCT

uClamp3301D Low Voltage µClamp[TM] for ESD and CDE Protection 

## **PROTECTION PRODUCTS** - MicroClamp[TM] 

## Description 

The µClamp[TM] series of Transient Voltage Suppressors (TVS) are designed to replace multilayer varistors (MLVs) in portable applications such as cell phones, notebook computers, and PDAs.  They offer superior electrical characteristics such as lower clamping voltage and no device degradation when compared to MLVs.  They are are designed to protect sensitive semiconductor components from damage or upset due to electrostatic discharge (ESD), lightning, electrical fast transients (EFT), and cable discharge events (CDE). 

The µClamp[TM] 3301D is constructed using  Semtech’s proprietary EPD process technology. The EPD process provides low standoff voltages with significant reductions in leakage currents and capacitance over siliconavalanche diode processes.  They feature a true operating voltage of 3.3 volts for superior protection when compared to traditional pn junction devices. 

The µClamp3301D is in a SOD-323 package and will protect one unidirectional line.  They give the designer the flexibility to protect one line in applications where arrays are not practical. 

They may be used to meet the ESD immunity requirements of IEC 61000-4-2, Level 4 (±15kV air, ±8kV contact discharge). 

## Features 

- 100 Watts peak pulse power (tp = 8/20µs) 

- Transient protection for data lines to IEC 61000-4-2 (ESD) ±15kV (air), ±8kV (contact) IEC 61000-4-4 (EFT) 40A (tp = 5/50ns) IEC 61000-4-5 (Lightning) 10A (tp = 8/20µs) 

- Small package for use in portable electronics 

- Suitable replacement for MLVs in ESD protection applications 

- Protects one line 

- Low clamping voltage 

- Working voltages: **3.3V** 

- Low leakage current 

- Solid-state silicon-avalanche technology 

## Mechanical Characteristics 

- EIAJ SOD-323 package 

- Molding compound flammability rating: UL 94V-0 

- Marking: Marking code, cathode band 

- Packaging: Tape and Reel 

- Lead Finish: Matte tin 

- RoHS/WEEE Compliant 

## Applications 

- Cell Phone Handsets and Accessories 

- Laser Diode Protection 

- Notebooks, Desktops, & Servers 

- Portable Instrumentation 

- Analog Inputs 

## Equivalent Circuit Diagram 

**==> picture [265 x 209] intentionally omitted <==**

## Schematic & PIN Configuration 

**==> picture [43 x 106] intentionally omitted <==**

SOD-323 (Top View) 

www.semtech.com 

Revision 01/16/2008 

1 

uClamp3301D 

## **PROTECTION PRODUCTS** 

## Absolute Maximum Rating 

|**PROTECTION PRODUCTS**<br>Absolute Maximum Rating||||
|---|---|---|---|
|g<br>n<br>it<br>a<br>R|l<br>o<br>b<br>m<br>y<br>S|e<br>ul<br>a<br>V|s<br>ti<br>n<br>U|
|)s<br>µ<br>0<br>2<br>/<br>8<br>=<br>p<br>t(<br>r<br>e<br>w<br>o<br>P<br>e<br>slu<br>P<br>k<br>a<br>e<br>P|P k<br>p|0<br>0<br>1|stt<br>a<br>W|
|)s<br>µ<br>0<br>2<br>/<br>8<br>=<br>p<br>t(<br>t<br>n<br>e<br>rr<br>u<br>C<br>e<br>slu<br>P<br>k<br>a<br>e<br>P|I P<br>P|0<br>1|A|
|)<br>2<br>-<br>4<br>-<br>0<br>0<br>0<br>1<br>6<br>C<br>EI<br>r<br>e<br>p<br>m<br>r<br>o<br>f<br>e<br>v<br>a<br>W<br>M<br>B<br>H<br>(<br>e<br>g<br>a<br>tlo<br>V<br>D<br>S<br>E|V P<br>P|0<br>3|V<br>k|
|e<br>r<br>u<br>t<br>a<br>r<br>e<br>p<br>m<br>e<br>T<br>g<br>nit<br>a<br>r<br>e<br>p<br>O|TJ|5<br>2<br>1<br>+<br>o<br>t<br>5<br>5<br>-|C<br>°|
|e<br>r<br>u<br>t<br>a<br>r<br>e<br>p<br>m<br>e<br>T<br>e<br>g<br>a<br>r<br>o<br>t<br>S|T<br>G<br>T<br>S|0<br>5<br>1<br>+<br>o<br>t<br>5<br>5<br>-|C<br>°|



## Electrical Characteristics 

|Electrical Characteristics|Electrical Characteristics|Electrical Characteristics|Electrical Characteristics|Electrical Characteristics|Electrical Characteristics|Electrical Characteristics|
|---|---|---|---|---|---|---|
||||||||
|r<br>e<br>t<br>e<br>m<br>a<br>r<br>a<br>P|l<br>o<br>b<br>m<br>y<br>S|s<br>n<br>oiti<br>d<br>n<br>o<br>C|m<br>u<br>m<br>i<br>n<br>i<br>M|l<br>a<br>ci<br>p<br>y<br>T|m<br>u<br>m<br>ix<br>a<br>M|s<br>ti<br>n<br>U|
|e<br>g<br>a<br>tlo<br>V<br>ff<br>O<br>-<br>d<br>n<br>a<br>t<br>S<br>e<br>sr<br>e<br>v<br>e<br>R|V<br>M<br>W<br>R||||3<br>.<br>3|V|
|e<br>g<br>a<br>tlo<br>V<br>h<br>g<br>u<br>o<br>r<br>h<br>T-<br>h<br>c<br>n<br>u<br>P|V T<br>P|I T<br>P<br>A<br>µ<br>2<br>=|5<br>.<br>3|||V|
|e<br>g<br>a<br>tlo<br>V<br>k<br>c<br>a<br>B<br>-<br>p<br>a<br>n<br>S|V B<br>S|I B<br>S<br>A<br>m<br>0<br>5<br>=|8<br>.<br>2|||V|
|t<br>n<br>e<br>rr<br>u<br>C<br>e<br>g<br>a<br>k<br>a<br>e<br>L<br>e<br>sr<br>e<br>v<br>e<br>R|IR|V<br>M<br>W<br>R<br>C<br>°<br>5<br>2<br>=<br>T<br>,V<br>3<br>.<br>3<br>=|||5<br>.<br>0|A<br>µ|
|e<br>g<br>a<br>tlo<br>V<br>g<br>nip<br>m<br>alC|VC|I P<br>P<br>s<br>µ<br>0<br>2<br>/<br>8<br>=<br>p<br>t<br>,<br>A<br>1<br>=<br>2<br>o<br>t<br>1<br>niP|||5<br>.<br>4|V|
|e<br>g<br>a<br>tlo<br>V<br>g<br>nip<br>m<br>alC|VC|I P<br>P<br>s<br>µ<br>0<br>2<br>/<br>8<br>=<br>p<br>t<br>,<br>A<br>5<br>=<br>2<br>o<br>t<br>1<br>niP|||5<br>.<br>5|V|
|e<br>g<br>a<br>tlo<br>V<br>g<br>nip<br>m<br>alC|VC|I P<br>P<br>s<br>µ<br>0<br>2<br>/<br>8<br>=<br>p<br>t<br>,<br>A<br>0<br>1<br>=<br>2<br>o<br>t<br>1<br>niP|||5<br>.<br>9|V|
|e<br>g<br>a<br>tlo<br>V<br>d<br>r<br>a<br>w<br>r<br>o<br>F<br>e<br>d<br>oi<br>D<br>g<br>nir<br>e<br>e<br>t<br>S<br>)e<br>g<br>a<br>tlo<br>V<br>g<br>nip<br>m<br>alC<br>e<br>sr<br>e<br>v<br>e<br>R<br>(|VF|I P<br>P<br>s<br>µ<br>0<br>2<br>/<br>8<br>=<br>p<br>t<br>,<br>A<br>1<br>=<br>1<br>o<br>t<br>2<br>niP|||8<br>.<br>1|V|
|e<br>c<br>n<br>a<br>tic<br>a<br>p<br>a<br>C<br>n<br>oitc<br>n<br>u<br>J|Cj|VR<br>z<br>H<br>M<br>1<br>=<br>f<br>,V<br>0<br>=|||0<br>5|F<br>p|



www.semtech.com 

 2008 Semtech Corp. 

2 

uClamp3301D 

## **PROTECTION PRODUCTS** 

## Typical Characteristics 

## Non-Repetitive Peak Pulse Power vs. Pulse Time 

**==> picture [235 x 155] intentionally omitted <==**

**----- Start of picture text -----**<br>
10<br>1<br>0.1<br>0.01<br>0.1 1 10 100 1000<br>Pulse Duration - tp ( Ξ s)<br> (kW)<br>PP<br>Peak Pulse Power - P<br>**----- End of picture text -----**<br>


## Clamping Voltage vs. Peak Pulse Current 

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**----- Start of picture text -----**<br>
10<br>9<br>8<br>7<br>6<br>5<br>4<br>3 Waveform<br> Parameters:<br>2 tr = 8µs<br>1 td = 20µs<br>0<br>0 2 4 6 8 10 12<br>Peak Pulse Current - Ipp (A)<br> (V)Reverse Clamping Voltage - Vc<br>**----- End of picture text -----**<br>


## Power Derating Curve 

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**----- Start of picture text -----**<br>
110<br>100<br>90<br>80<br>70<br>60<br>50<br>40<br>30<br>20<br>10<br>0<br>0 25 50 75 100 125 150<br>Ambient Temperature - TA ( [o] C)<br>PP<br>% of Rated Power or I<br>**----- End of picture text -----**<br>


## **Normalized Capacitance vs. Reverse Voltage** 

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**----- Start of picture text -----**<br>
1.2<br>1<br>0.8<br>0.6<br>0.4<br>0.2<br>f = 1 MHz<br>0<br>0 0.5 1 1.5 2 2.5 3<br>Reverse Voltage - VR (V)<br>CJ(VR) / CJ(VR=0)<br>**----- End of picture text -----**<br>


## Insertion Loss S21 

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**----- Start of picture text -----**<br>
CH1 S21 LOG 6 dB / REF 0 dB<br>START. 030 MHz STOP 3000.000000 MHz<br>**----- End of picture text -----**<br>


www.semtech.com 

 2008 Semtech Corp. 

3 

uClamp3301D 

## **PROTECTION PRODUCTS** 

## Applications Information 

## Device Connection Options 

The µClamp3301D is designed to protect one I/O, or power supply line.  It will present a high impedance to the protected line up to 3.3 volts.  It will “turn on” when the line voltage exceeds 3.5 volts.  The device is unidirectional and may be used on lines where the signal polarity is above ground.  The cathode band should be placed towards the line that is to be protected. 

Due to the “snap-back” characteristics of the low voltage TVS, it is not recommended that the I/O line be directly connected to a DC source greater than snapback votlage (VSB) as the device can latch on as described below. 

## Device Schematic & Pin Configuration 

**==> picture [43 x 106] intentionally omitted <==**

## EPD TVS Characteristics 

## EPD TVS IV Characteristic Curve 

The µClamp3301D is constructed using Semtech’s proprietary EPD technology.  The structure of the EPD TVS is vastly different from the traditional pn-junction devices.  At voltages below 5V, high leakage current and junction capacitance render conventional avalanche technology impractical for most applications. However, by utilizing the EPD technology, the µClamp3301D can effectively operate at 3.3V while maintaining excellent electrical characteristics. 

The EPD TVS employs a complex nppn structure in contrast to the pn structure normally found in traditional silicon-avalanche TVS diodes.  Since the EPD TVS devices use a 4-layer structure, they exhibit a slightly different IV characteristic curve when compared to conventional devices.  During normal operation, the device represents a high-impedance to the circuit up to the device working voltage (VRWM).  During an ESD event, the device will begin to conduct and will enter a low impedance state when the punch through voltage (VPT) is exceeded.  Unlike a conventional device, the low voltage TVS will exhibit a slight negative resistance characteristic as it conducts current.  This characteristic aids in lowering the clamping voltage of the device, but must be considered in applications where DC voltages are present. 

When the TVS is conducting current, it will exhibit a slight “snap-back” or negative resistance characteristics due to its structures.  This point is defined on the curve by the snap-back voltage (VSB) and snap-back 

**==> picture [195 x 205] intentionally omitted <==**

**----- Start of picture text -----**<br>
I PP<br>ISB<br>IPT<br>VF IR<br>VRWM VSB VPT [V] C<br>IF<br>**----- End of picture text -----**<br>


current (ISB).  To return to a non-conducting state, the current through the device must fall below the ISB (approximately <50mA) and the voltage must fall below the VSB (normally 2.8 volts for a 3.3V device).  If a 3.3V TVS is connected to 3.3V DC source, it will never fall below the snap-back voltage of 2.8V and will therefore stay in a conducting state. 

www.semtech.com 

4 

 2008 Semtech Corp. 

uClamp3301D 

## **PROTECTION PRODUCTS** 

## Outline Drawing - SOD-323 

**==> picture [259 x 281] intentionally omitted <==**

**----- Start of picture text -----**<br>
DIMENSIONS<br>INCHES MILLIMETERS<br>DIM<br>MIN NOM MAX MIN NOM MAX<br>A 0.36 - .046 0.91 - 1.17<br>A1 .000 - .004 0.00 - 0.10<br>A2 .012 - .016 0.30 - 0.40<br>b .013 - .017 0.33 - 0.43<br>E1 E c .005 - .008 0.13 - 0.20<br>D .044 .050 .054 1.18 1.28 1.37<br>E1 .060 .065 .070 1.50 1.64 1.78<br>E .097 .102 .107 2.46 2.59 2.72<br>L .010 .014 .018 0.25 0.35 0.45<br>N 2 2<br>D<br>A2<br>A H<br>A1 GAGE<br>PLANE c<br>0.008<br>L<br>DETAIL A<br>SEE DETAIL A<br>SIDE VIEW<br>**----- End of picture text -----**<br>


## NOTES: 

1. CONTROLLING DIMENSIONS ARE IN INCHES (ANGLES IN DEGREES). 2. DIMENSIONS "E1" AND "D" DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. 

## Land Pattern - SOD-323 

**==> picture [275 x 72] intentionally omitted <==**

**----- Start of picture text -----**<br>
X DIMENSIONS<br>DIM INCHES MILLIMETERS<br>C (.085) (2.15)<br>(C) G Z G .035 0.90<br>X .021 0.53<br>Y Y .049 1.25<br>Z .134 3.40<br>**----- End of picture text -----**<br>


## NOTES: 

1. THIS LAND PATTERN IS FOR REFERENCE PURPOSES ONLY. CONSULT YOUR MANUFACTURING GROUP TO ENSURE YOUR COMPANY'S MANUFACTURING GUIDELINES ARE MET. 

www.semtech.com 

 2008 Semtech Corp. 

5 

uClamp3301D 

## **PROTECTION PRODUCTS** 

## Marking Code 

3U 

## Ordering Information 

|r<br>e<br>b<br>m<br>u<br>N<br>tr<br>a<br>P|g<br>n<br>i<br>k<br>r<br>o<br>W<br>e<br>g<br>a<br>tl<br>o<br>V|r<br>e<br>p<br>y<br>t<br>Q<br>l<br>e<br>e<br>R|e<br>zi<br>S<br>l<br>e<br>e<br>R|
|---|---|---|---|
|T<br>C<br>T.<br>D<br>1<br>0<br>3<br>3<br>p<br>m<br>alC<br>u|V<br>3<br>.<br>3|0<br>0<br>0<br>,<br>3|”<br>7|



MicroClamp, uClamp, and µClamp are marks of Semtech Corporation 

## Contact Information 

Semtech Corporation Protection Products Division 200 Flynn Rd., Camarillo, CA 93012 Phone: (805)498-2111   FAX (805)498-3804 

www.semtech.com 

 2008 Semtech Corp. 

6