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UCLAMP0301PQTNT
TVS DIODE, UNIDIR, 8V, SLP1006P2
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- Manufacturer: SEMTECH
- Product type: TVS Diodes
- Produc; TVS DIODE, UNIDIR, 8V, SLP1006P2; Product Range:µClamp Series; TVS Polarity:Unidirectional; Reverse Standoff Voltage:3V; Clamping Voltage Max:8V; Diode Case Style:SLP1006P2; No.
- SVHC: To Be Advised
- No. of Pins: 2Pins
- TVS Polarity: Unidirectional
- Product Range: µClamp Series
- Qualification: AEC-Q100
- Diode Mounting: Surface Mount
- Diode Case Style: SLP1006P2
- Clamping Voltage Max: 8V
- Reverse Standoff Voltage: 3V
- Maximum Breakdown Voltage: -
- Minimum Breakdown Voltage: -
- Operating Temperature Max: 85°C
- Peak Pulse Power Dissipation: 40W
| Delivery and price | |
|---|---|
| Units per pack | 5000 |
| Price | 0.167 € |
| Current stock | 1000+ |
| Lead time | 30 days |
Datasheet
µClamp0301PQ Low Voltage µClamp[®] for ESD and CDE Protection ## PROTECTION PRODUCTS - µClamp[®] ## Description The µClamp[®] TVS diodes are designed for automobile applications and qualifi ed to AEC-Q100 Grade3. They offer superior electrical characteristics such as lower clamping voltage and no device degradation when compared to other technologies. They are designed to protect sensitive semiconductor components from damage or upset due to electrostatic discharge (ESD), lightning, electrical fast transients (EFT), and cable discharge events (CDE). The µClamp[®] 0301PQ is constructed using Semtech’s proprietary EPD process technology. The EPD process provides low standoff voltages with signifi cant reductions in leakage currents and capacitance over siliconavalanche diode processes. They feature a true operating voltage of 3.0 volts for superior protection when compared to traditional pn junction devices. The µClamp0301PQ is in a 2-pin SLP1006P2 package measuring 1.0 x 0.6 x 0.5mm. The leads are spaced at a pitch of 0.65mm and are fi nished with lead-free NiPdAu. Each device will protect one line operating at 3.0 volts. It gives the designer the fl exibility to protect single lines in applications where arrays are not practical. They may be used to meet the ESD immunity requirements of IEC 61000-4-2, Level 4 (±15kV air, ±8kV contact discharge) and above. The combination of small size and high ESD surge capability makes them ideal for use in automobile applications. The µClamp0301PQ is qualifi ed to AEC-Q100 Grade 3. ## Package Dimensions **==> picture [271 x 217] intentionally omitted <==** **----- Start of picture text -----**<br> � ��<br>����<br>����<br>�����������������<br>����<br>������������������<br>����������������<br>**----- End of picture text -----**<br> ## Features - u Transient protection for data lines to IEC 61000-4-2 (ESD) IEC 61000-4-4 (EFT) Cable Discharge Event (CDE) - u Ultra-small package - u Protects one data line - u Low clamping voltage - u Working voltage: 3.0V - u Low leakage current - u Solid-state silicon-avalanche technology - u AEC-Q100 Grade 3 Qualifi ed ## Mechanical Characteristics - u SLP1006P2 package - u Pb-Free, Halogen Free, RoHS/WEEE Compliant - u Nominal Dimensions: 1.0 x 0.6 x 0.5 mm - u Lead Finish: NiPdAu - u Molding compound fl ammability rating: UL 94V-0 - u Marking: Marking code, cathode band - u Packaging: Tape and Reel ## Applications - u Automobile Applications - u Cellular Handsets & Accessories - u Notebooks & Handhelds - u Portable Instrumentation - u Digital Cameras - u Peripherals - u MP3 Players ## Schematic & Pin Confi guration **==> picture [271 x 217] intentionally omitted <==** **----- Start of picture text -----**<br> �����������������<br>������������������������<br>**----- End of picture text -----**<br> www.semtech.com 9/29/2014 1 µClamp0301PQ ## PROTECTION PRODUCTS ## Absolute Maximum Ratings |**Rating**|**Symbol**|**Value**|**Units**| |---|---|---|---| |Peak Pulse Power(tp = 8/20µs)|PPK|40|W| |Peak Pulse Current(tp = 8/20µs)|IPP|5|A| |ESD per IEC 61000-4-2 (Air)(1)<br>ESD per IEC 61000-4-2(Contact)(1)|VESD|±30<br>±25|kV| |Operating Temperature|TJ|-40 to +85|OC| |Storage Temperature|TSTG|-55 to +150|OC| Notes: (1): ESD Gun return path to Ground Reference Plane (GRP) |**Parameter**|**Symbol**|**Conditions**|**Conditions**|**Min.**|**Typ.**|**Max.**|**Units**| |---|---|---|---|---|---|---|---| |Reverse Stand-Off Voltage|VRWM|||||3.0|V| |Punch-Through Voltage|VPT|IPT= 2μA||3.1|3.9|4.6|V| |Snap-Back Voltage|VSB|ISB= 50mA||2.8|||| |Reverse Leakage Current|IR|VRWM= 3.0V|||0.05|0.5|μA| |ClampingVoltage|VC|IPP= 1A, tp = 8/20µs||||5.5|V| |ClampingVoltage|VC|IPP= 5A, tp = 8/20µs||||8.0|V| |Reverse ClampingVoltage|VCR|IPP= 1A, tp = 8/20µs||||2.4|V| |Junction Capacitance|CJ|I/O pin to GND<br>f = 1MHz|VR= 0V||25|30|pF| ||||VR= 3.0V||18||| www.semtech.com 2014 Semtech Corporation. 2 µClamp0301PQ ## PROTECTION PRODUCTS ## Typical Characteristics ## Non-Repetative Peak Pulse Power vs. Pulse Time **==> picture [253 x 169] intentionally omitted <==** **----- Start of picture text -----**<br> 1000<br>TA = 25 [O] C<br>100<br>10<br>1 DR040412-40<br>0.1 1 10 100 1000<br>Pulse Duration - tp (µs)<br> (W)<br>PP<br>Peak Pulse Power - P<br>**----- End of picture text -----**<br> ## Reverse Leakage Current vs. Temperature **==> picture [249 x 180] intentionally omitted <==** **----- Start of picture text -----**<br> 4<br>Vr = 3V<br>Vr = 1V<br>3<br>2<br>1<br>AR_UC0301PQ_IRvTvV_R0<br>0<br>-50 0 50 100<br>Temperature ( [O] C)<br>Leakage Current - Ir (nA)<br>**----- End of picture text -----**<br> ## ESD Clamping Voltage +8kV Contact **==> picture [249 x 180] intentionally omitted <==** **----- Start of picture text -----**<br> 60<br>TA = 25 [O] C. Discharge to pin2<br>Waveform IEC61000-4-2 +8kV.<br>Measured with and corrected for 50�, 20dB Attenuator.<br>50� Scope Input Impedance, 2GHz BW.<br>40 ESD Gun Return connected to ESD Ground Plane.<br>20<br>0<br>AR_UC0301PQ_+8kV_ESD<br>-20<br>-20 0 20 40 60 80 100<br>Time (ns)<br> (V) Clamping Voltage - VC<br>**----- End of picture text -----**<br> ## Power Derating Curve **==> picture [254 x 176] intentionally omitted <==** **----- Start of picture text -----**<br> 120<br>100<br>80<br>60<br>40<br>20<br>DR040514-25-85-85-150<br>0<br>0 25 50 75 100<br>Ambient Temperature - TA ( [O] C)<br>PP<br>% of Rated Power or I<br>**----- End of picture text -----**<br> ## Capacitance vs. Temperature **==> picture [249 x 396] intentionally omitted <==** **----- Start of picture text -----**<br> 30<br>25<br>20<br>15<br>10<br>LG 0V Bias<br>LG 3V Bias<br>5<br>AR_UC0301PQ_CAPvTvV_R0<br>0<br>-50 0 50 100<br>Temperature ( [O] C)<br>ESD Clamping Voltage -8kV Contact<br>20<br>0<br>-20<br>-40<br>-60<br>TA = 25 [O] C. Discharge to pin2<br>Waveform IEC61000-4-2 +8kV.<br>Measured with and corrected for 50�, 20dB Attenuator.<br>-80 50� Scope Input Impedance, 2GHz BW.<br>ESD Gun Return connected to ESD Ground Plane.<br>AR_UC0301PQ_+8kV_ESD<br>-100<br>-20 0 20 40 60 80 100<br>Time (ns)<br>Capacitance (pF)<br> (V) Clamping Voltage - VC<br>**----- End of picture text -----**<br> www.semtech.com 2014 Semtech Corporation. 3 µClamp0301PQ ## PROTECTION PRODUCTS ## Typical Characteristics (Continued) ## 8x20us Clamping Performance Reverse **==> picture [252 x 171] intentionally omitted <==** **----- Start of picture text -----**<br> 12<br>10 TA = 25 [O] C<br>Waveform Parameters:<br>�������������������<br>Pin2 to Pin1<br>8<br>6<br>4<br>2<br>AR_UC0301PQ_8x20 REV_R0<br>0<br>0 5 10 15 20<br>Peak Pulse Current - IPP (A)<br> (V) Clamping Voltage - VC<br>**----- End of picture text -----**<br> ## TLP Characteristics Reverse **==> picture [249 x 169] intentionally omitted <==** **----- Start of picture text -----**<br> 30<br>TA = 25 [O] C<br>25 Pin 2 - 1 Positive pulse<br>TLP Parameters:<br>tp = 100ns<br>20 tr = 200ps<br>RDYN = 0.301� (ITLP = 4A to 16A)<br>15<br>10<br>5<br>0 AR_UC0301PQ_TLP+_R0<br>0 2 4 6 8 10 12 14 16<br>TLP Voltage (V)<br>TLP Current (A)<br>**----- End of picture text -----**<br> ## 8x20us Clamping Performance Forward **==> picture [259 x 176] intentionally omitted <==** **----- Start of picture text -----**<br> 12<br>TA = 25 [O] C<br>10 Waveform Parameters:<br>�������������������<br>Pin1 to Pin2<br>8<br>6<br>4<br>2<br>AR_UC0301PQ_8x20 FRWD_R0<br>0<br>0 1 2 3 4 5 6 7<br>Peak Pulse Current - IPP (A)<br> (V) Clamping Voltage - VC<br>**----- End of picture text -----**<br> ## TLP Characteristics Forward **==> picture [249 x 169] intentionally omitted <==** **----- Start of picture text -----**<br> 0<br>TA = 25 [O] C<br>Pin 2 - 1 Negative pulse<br>TLP Parameters:<br>-5 tp = 100ns<br>tr = 200ps<br>RDYN = 0.95� (ITLP = -4A to -16A)<br>-10<br>-15<br>-20<br>AR_UC0301PQ_TLP-_R0<br>-25<br>-25 -20 -15 -10 -5 0<br>TLP Voltage (V)<br>TLP Current (A)<br>**----- End of picture text -----**<br> www.semtech.com 2014 Semtech Corporation. 4 µClamp0301PQ ## PROTECTION PRODUCTS ## Applications Information ## Device Connection Options The µClamp0301PQ is designed to protect one data or I/O line operating at 3.0 volts. It will present a high impedance to the protected line up to 3.0 volts. It will “turn on” when the line voltage exceeds the punch thru voltage. The device is unidirectional and may be used on lines where the signal polarity is above ground. The cathode band should be placed towards the line that is to be protected. These devices should not be connected to DC supply rails as they can latch up as described below. Due to the “snap-back” characteristics of the low voltage TVS, it is not recommended that the I/O line be directly connected to a DC source greater than snap-back votlage (VSB) as the device can latch on as described below. ## EPD TVS Characteristics The µClamp0301PQ is constructed using Semtech’s proprietary EPD technology. The structure of the EPD TVS is vastly different from the traditional pn-junction devices. At voltages below 5V, high leakage current and junction capacitance render conventional avalanche technology impractical for most applications. However, by utilizing the EPD technology, the µClamp0301PQ can effectively operate at 3.0V while maintaining excellent electrical characteristics. The EPD TVS employs a complex nppn structure in contrast to the pn structure normally found in traditional silicon-avalanche TVS diodes. Since the EPD TVS devices use a 4-layer structure, they exhibit a slightly different IV characteristic curve when compared to conventional devices. During normal operation, the device represents a high-impedance to the circuit up to the device working voltage (VRWM). During an ESD event, the device will begin to conduct and will enter a low impedance state when the punch through voltage (VPT) is exceeded. Unlike a conventional device, the low voltage TVS will exhibit a slight negative resistance characteristic as it conducts current. This characteristic aids in lowering the clamping voltage of the device, but must be considered in applications where DC voltages are present. When the TVS is conducting current, it will exhibit a slight “snap-back” or negative resistance characteristics due to its structures. This point is defi ned on the curve by the snap-back voltage (VSB) and snap-back current (ISB). To return to a non-conducting state, the current through the device must fall below the ISB (approximately <50mA) ## Device Schematic & Pin Confi guration **==> picture [272 x 226] intentionally omitted <==** **----- Start of picture text -----**<br> �<br>�<br>�����������������<br>**----- End of picture text -----**<br> ## EPD TVS IV Characteristic Curve **==> picture [272 x 292] intentionally omitted <==** **----- Start of picture text -----**<br> ���<br>���<br>�������������4���<br>���<br>�� ��<br>���� ��<br>���<br>�� ���<br>**----- End of picture text -----**<br> and the voltage must fall below the VSB (normally 2.8 volts for a 3.0V device). If a 3.0V TVS is connected directly to a 3.0V DC source, it will never fall below the snap-back voltage of 2.8V and will therefore stay in a conducting state. www.semtech.com 2014 Semtech Corporation. 5 µClamp0301PQ ## PROTECTION PRODUCTS ## Outline Drawing - SLP1006P2 ## Land Pattern - SLP1006P2 **==> picture [221 x 106] intentionally omitted <==** **----- Start of picture text -----**<br> ! 1<br>)<br>[DIM| INCHES | [MILLIMETERS][|]<br>+<br>|X | .024 | 060<br>y Pt ) 022, |<br>+<br>Pt 055 |055 [140]<br>**----- End of picture text -----**<br> www.semtech.com 2014 Semtech Corporation. 6 µClamp0301PQ ## PROTECTION PRODUCTS ## Marking |Ordering Information|Ordering Information|Ordering Information||| |---|---|---|---|---| |||||| |Part Number<br>µClamp0301PQTNT||Qty per Reel<br>10000||Reel Size<br>7”| Notes: 1) Lead fi nish is lead-free NiPdAu. Notes: Cathode Band at Pin 2 2) MicroClamp, uClamp and µClamp are trademarks of Semtech Corporation. ## Tape and Reel Specifi cation **==> picture [202 x 107] intentionally omitted <==** **----- Start of picture text -----**<br> 2 0<br>1.19+0.05 fofokfo} -To}-eb<br>5 5 Ma x Bo 1 Ay i} Ay i} i}<br>0.25+0.02<br>B<br>5<br>5_MaMa x Section I A-A<br>)<br>**----- End of picture text -----**<br> ## Contact Information Semtech Corporation Protection Products Division 200 Flynn Rd., Camarillo, CA 93012 Phone: (805)498-2111 FAX (805)498-3804 www.semtech.com 2014 Semtech Corporation. 7
Updated at April 15, 2026
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