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TT8M2TR
Dual MOSFET, Complementary N and P Channel, 30 V, 2.5 A, 0.065 ohm, TSST, Surface Mount
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- Manufacturer: ROHM
- Product type: Dual MOSFETs
- Channel Type: Complementary N and P Channel
- Power Dissipation N Channel: 1.25W
- Power Dissipation P Channel: 1.25W
- Drain Source Voltage Vds N Channel: 30V
- Drain Source Voltage Vds P Channel: 30V
- Continuous Drain Current Id N Channel: 2.5A
- Continuous Drain Current Id P Channel: 2.5A
- Drain Source On State Resistance N Channel: 0.065ohm
- Drain Source On State Resistance P Channel: 0.065ohm
| Delivery and price | |
|---|---|
| Units per pack | 5000 |
| Price | 0.269 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## 2.5V Drive Nch MOSFET ## 1.5V Drive Pch MOSFET ## **TT8M2** ## **Structure** Silicon N-channel MOSFET/ Silicon P-channel MOSFET ## **Features** - 1) Low on-state resistance. - 2) Low voltage drive. - 3) High power package. ## **Dimensions** (Unit : mm) **==> picture [166 x 114] intentionally omitted <==** **----- Start of picture text -----**<br> TSST8<br>3.0<br>(8) (7) (6) (5)<br>i<br>(1) (2) (3) (4)<br>Abbreviated symbol : M02<br>Each lead has same dimensions<br>**----- End of picture text -----**<br> ## **Application** Switching ## **Packaging specifications** |Type|Package|Taping| |---|---|---| ||Code|TR| ||Basic ordering unit (pieces)|3000| |TT8M2|||| ## **Inner circuit** **==> picture [201 x 172] intentionally omitted <==** **----- Start of picture text -----**<br> (8) (7) (6) (5)<br>∗ 2 ∗ 2<br>(1) Tr1 Source<br>∗ 1 ∗ 1 (2) Tr1 Gate<br>(3) Tr2 Source<br>(4) Tr2 Gate<br>(1) (2) (3) (4) (5) Tr2 Drain<br>(6) Tr2 Drain<br>∗ 1 ESD protection diode (7) Tr1 Drain<br>∗ 2 Body diode (8) Tr1 Drain<br>**----- End of picture text -----**<br> ## **Absolute maximum ratings** (Ta=25°C) ## <Tr1 : Nch> |**Absolute maximum ratings**(Ta=25°C)<br><Tr1 : Nch>|**Absolute maximum ratings**(Ta=25°C)<br><Tr1 : Nch>|(Ta=25°C)°C)C)||| |---|---|---|---|---| |Parameter||Symbol|Limits|Unit| |Drain−source voltage||VDSS|30|V| |Gate−source voltage||VGSS|±12|V| |Drain current|Continuous|ID|±2.5|A| ||Pulsed|IDP<br>∗1|±10|A| |Source current<br>(Body diode)|Continuous|IS|0.8|A| ||Pulsed|ISP<br>∗1|10|A| ∗ 1 Pw ≤ 10 µ s, Duty cycle ≤ 1% www.rohm.com **2009.06 - Rev.A** 1/8 ○c 2009 ROHM Co., Ltd. All rights reserved. Data Sheet **TT8M2** ## <Tr2 : Pch> |<Tr2 : Pch>||||| |---|---|---|---|---| |Parameter||Symbol|Limits|Unit| |Drain−source voltage||VDSS|−20|V| |Gate−source voltage||VGSS|±10|V| |Drain current|Continuous|ID|±2.5|A| ||Pulsed|IDP<br>∗1|±10|A| |Source current<br>(Body diode)|Continuous|IS|−0.8|A| ||Pulsed|ISP<br>∗1|−10|A| ∗ 1 Pw ≤ 10 µ s, Duty cycle ≤ 1% ## <Tr1 AND Tr2> |<Tr1 AND Tr2>|||| |---|---|---|---| |Parameter|Symbol|Limits|Unit| |Total power dissipation|PD<br>∗2|1.25|W / TOTAL| |||1.0|W / ELEMENT| |Channel temperature|Tch|150|°C| |Range of Storage temperature|Tstg|−55 to+150|°C| ∗ 2 Mounted on a ceramic board ## � **Electrical characteristics** (Ta=25°C) ## < Characteristics for the Tr1( Nch ).> |Parameter|Symbol|Symbol|Symbol|Min.|Typ.|Max.|Unit|Conditions| |---|---|---|---|---|---|---|---|---| |Gate-source leakage|IGSS|||−|−|±10|µA|VGS=±12V, VDS=0V| |Drain-source breakdown voltage|V(BR) DSS|||30|−|−|V|ID=1mA, VGS=0V| |Zero gate voltage drain current|IDSS|||−|−|1|µA|VDS=30V, VGS=0V| |Gate threshold voltage|VGS (th)|||0.5|−|1.5|V|VDS=10V, ID=1mA| |Static drain-source on-state<br>resistance|RDS (on)<br>∗|||−|65|90|mΩ|ID=2.5A, VGS=4.5V| |||||−|70|95|mΩ|ID=2.5A, VGS=4V| |||||−|95|130|mΩ|ID=2.5A, VGS=2.5V| |Forward transfer admittance||Yfs|∗|2.2|−|−|S|VDS=10V, ID=2.5A| |Input capacitance|Ciss|||−|180|−|pF|VDS=10V<br>VGS=0V<br>f=1MHz| |Output capacitance|Coss|||−|60|−|pF|| |Reverse transfer capacitance|Crss|||−|35|−|pF|| |Turn-on delay time|td (on)<br>∗|||−|7|−|ns|VDD15V<br>ID=1.2A<br>VGS=4.5V<br>RL 12.5Ω<br>RG=10Ω| |Rise time|tr<br>∗|||−|30|−|ns|| |Turn-off delay time|td (off)<br>∗|||−|20|−|ns|| |Fall time|tf<br>∗|||−|20|−|ns|| |Total gate charge|Qg<br>∗|||−|3.2|−|nC|VDD15V, ID=2.5A<br>VGS=4.5V<br>RL 6Ω, RG=10Ω| |Gate-source charge|Qgs<br>∗|||−|0.9|−|nC|| |Gate-drain charge|Qgd<br>∗|||−|0.4|−|nC|| ∗ Pulsed ## � **Body diode characteristics** (Source-drain) (Ta=25°C) |Parameter|Symbol|Min.|Typ.|Max.|Unit|Conditions| |---|---|---|---|---|---|---| |Forward voltage|VSD<br>∗|−|−|1.2|V|IS= 2.5A, VGS=0V| ∗ Pulsed www.rohm.com **2009.06 - Rev.A** 2/8 ○c 2009 ROHM Co., Ltd. All rights reserved. Data Sheet **TT8M2** ## � **Electrical characteristics** (Ta=25°C) ## < Characteristics for the Tr2( Pch ).> |Parameter<br>Symbol|Parameter<br>Symbol|Parameter<br>Symbol|Parameter<br>Symbol|Min.<br>Typ.<br>Max.<br>Unit<br>Conditions|Min.<br>Typ.<br>Max.<br>Unit<br>Conditions|Min.<br>Typ.<br>Max.<br>Unit<br>Conditions|Min.<br>Typ.<br>Max.<br>Unit<br>Conditions|Min.<br>Typ.<br>Max.<br>Unit<br>Conditions| |---|---|---|---|---|---|---|---|---| |Gate-source leakage|IGSS|||−|−|±10|µA|VGS=±10V, VDS=0V| |Drain-source breakdown voltage|V(BR) DSS|||−20|−|−|V|ID= −1mA, VGS=0V| |Zero gate voltage drain current|IDSS|||−|−|−1|µA|VDS= −20V, VGS=0V| |Gate threshold voltage|VGS (th)|||−0.3|−|−1.0|V|VDS= −10V, ID= −1mA| |Static drain-source on-state<br>resistance|RDS (on)<br>∗|||−|49|68|mΩ|ID= −2.5A, VGS= −4.5V| |||||−<br>|68|95|mΩ|ID= −1.2A, VGS= −2.5V| |||||−|100|150|mΩ|ID= −1.2A, VGS= −1.8V| |||||−|140|280|mΩ|ID= −0.5A, VGS= −1.5V| |Forward transfer admittance||Yfs|∗|2.5<br>|−|−|S|VDS= −10V, ID= −2.5A| |Input capacitance|Ciss|||−|1270|−|pF|VDS= −10V<br>VGS=0V<br>f=1MHz| |Output capacitance|Coss|||−|100|−|pF|| |Reverse transfer capacitance|Crss|||−|90|−|pF|| |Turn-on delay time|td (on)<br>∗|||−<br>|9|−|ns|VDD−10V<br>ID= −1.2A<br>VGS= −4.5V<br>RL 8.3Ω<br>RG=10Ω| |Rise time|tr<br>∗|||−<br>|30|−|ns|| |Turn-off delay time|td (off)<br>∗|||−<br>|120|−|ns|| |Fall time|tf<br>∗|||−<br>|85|−|ns|| |Total gate charge|Qg<br>∗|||−<br>|12|−|nC|VDD −10V, ID= −2.5A<br>VGS= −4.5V<br>RL 4Ω, RG=10Ω| |Gate-source charge|Qgs<br>∗|||−<br>|2.5|−|nC|| |Gate-drain charge|Qgd<br>∗|||−<br>|2.0|−|nC|| ∗ Pulsed ## � **Body diode characteristics** (Source-drain) (Ta=25°C) |Parameter|Symbol|Min.|Typ.|Max.|Unit|Conditions| |---|---|---|---|---|---|---| |Forward voltage|VSD<br>∗|−|−|−1.2|V|IS= −2.5A, VGS=0V| ∗ Pulsed www.rohm.com ○c 2009 ROHM Co., Ltd. All rights reserved. **2009.06 - Rev.A** 3/8 Data Sheet **TT8M2** ## � **Electrical characteristics curves <Nch>** **==> picture [433 x 543] intentionally omitted <==** **----- Start of picture text -----**<br> 2.5 Ta=25°C 2.5 Ta=25°C 10 VDS= 10V<br>Pulsed Pulsed Pulsed<br>2 VVGSGS= 10V= 4.5V 2 V V GSGS= 4.5V = 4.0V 1 Ta= 125°C<br>VGS=4.0V VGS= 2.5V Ta= 75°C<br>1.5 VGS= 2.5V 1.5 Ta= 25°C<br>VGS= 2.0V 0.1 Ta= - 25°C<br>1 VGS= 1.5V 1 VGS= 1.5V<br>0.01<br>0.5 0.5<br>VGS= 1.2V VGS= 1.2V<br>0 0 0.001<br>0 0.2 0.4 0.6 0.8 1 0 2 4 6 8 10 0 0.5 1 1.5 2<br>DRAIN-SOURCE VOLTAGE : VDS[V] DRAIN-SOURCE VOLTAGE : VDS[V] GATE-SOURCE VOLTAGE : VGS[V]<br>Fig.1 Typical Output Characteristics(Ⅰ) Fig.2 Typical Output Characteristics(Ⅱ) Fig.3 Typical Transfer Characteristics<br>1000 1000 1000<br>Ta= 25°C VGS= 4.5V VGS= 4.0V<br>Pulsed Pulsed Pulsed<br>VVVGS GS GS= 2.5V= 4.0V= 4.5V Ta=125 Ta=75 TaTa= -25°C=25°° C C°C Ta=125°CTa=75°C Ta=25°C Ta= -25°C<br>100 100 100<br>10 10 10<br>0.1 1 10 0.1 1 10 0.1 1 10<br>DRAIN-CURRENT : ID[A] DRAIN-CURRENT : ID[A] DRAIN-CURRENT : ID[A]<br>Fig.4 Static Drain-Source On-State Fig.5 Static Drain-Source On-State Fig.6 Static Drain-Source On-State<br> Resistance vs. Drain Current(Ⅰ) Resistance vs. Drain Current(Ⅱ) Resistance vs. Drain Current(Ⅲ)<br>1000 VGS= 2.5V 10 VDS= 10V 300 Ta=25°C<br>Pulsed Ta=125°C Pulsed Pulsed<br>Ta=75°C 250<br>Ta=25°C ID= 1.2A<br>Ta= -25°C 200 ID= 2.5A<br>100 1 Ta= -25°C 150<br>Ta=25°C<br>Ta=75°C 100<br>Ta=125°C<br>50<br>10 0.1 0<br>0.1 1 10 0.01 0.1 1 10 0 2 4 6 8 10<br>DRAIN-CURRENT : ID[A] DRAIN-CURRENT : ID[A] GATE-SOURCE VOLTAGE : VGS[V]<br>Fig.7 Static Drain-Source On-State Fig.8 Forward Transfer Admittance<br> Resistance vs. Drain Current(Ⅳ) vs. Drain Current Fig.9 Static Drain-Source On-State Resistance vs. Gate Source Voltage<br>[A]D DRAIN CURRENT : I[A]D DRAIN CURRENT : I[A]D<br>DRAIN CURRENT : I<br>Ω](on)[m Ω](on)[m Ω](on)[m<br>DS DS DS<br>RESISTANCE : R RESISTANCE : R RESISTANCE : R<br>STATIC DRAIN-SOURCE ON-STATE STATIC DRAIN-SOURCE ON-STATE STATIC DRAIN-SOURCE ON-STATE<br>Ω](on)[m Ω]<br>DS (ON)[m<br>DS<br>FORWARD TRANSFER ADMITTANCE : |Yfs| [S]<br>RESISTANCE : R<br>RESISTANCE : R<br>STATIC DRAIN-SOURCE ON-STATE<br>STATIC DRAIN-SOURCE ON-STATE<br>**----- End of picture text -----**<br> www.rohm.com **2009.06 - Rev.A** 4/8 ○c 2009 ROHM Co., Ltd. All rights reserved. Data Sheet **TT8M2** **==> picture [432 x 152] intentionally omitted <==** **----- Start of picture text -----**<br> 10<br>VPulsedGS=0V 5 Ta=25°C 1000 Ta=25°C<br>VDD= 15V Ciss f=1MHz<br>4 ID= 2.5A VGS=0V<br>1 RG=10Ω<br>Pulsed<br>3<br>100<br>Ta=125°C 2<br>0.1 Ta=75°C<br>Ta=25°C Coss<br>Ta=-25°C 1<br>Crss<br>0.01 0 10<br>0 0.5 1 1.5 0 1 2 3 4 0.01 0.1 1 10 100<br>SOURCE-DRAIN VOLTAGE : VSD [V] TOTAL GATE CHARGE : Qg [nC] DRAIN-SOURCE VOLTAGE : VDS[V]<br>Fig.12 Typical Capacitance<br>Fig.10 Reverse Drain Current<br> vs. Sourse-Drain Voltage Fig.11 Dynamic Input Characteristics vs. Drain-Source Voltage<br> [V]<br>GS CAPACITANCE : C [pF]<br>REVERSE DRAIN CURRENT : Is [A] GATE-SOURCE VOLTAGE : V<br>**----- End of picture text -----**<br> **==> picture [138 x 146] intentionally omitted <==** **----- Start of picture text -----**<br> 1000 Ta=25°C RG=10Ω<br>tf VDD= 15V Pulsed<br>V GS =4.5V<br>100<br>td(off)<br>10<br>t d (on) t r<br>1<br>0.01 0.1 1 10<br>DRAIN-CURRENT : ID[A]<br>Fig.13 Switching Characteristics<br>SWITCHING TIME : t [ns]<br>**----- End of picture text -----**<br> www.rohm.com ○c 2009 ROHM Co., Ltd. All rights reserved. **2009.06 - Rev.A** 5/8 Data Sheet **TT8M2** ## **<Pch>** **==> picture [431 x 534] intentionally omitted <==** **----- Start of picture text -----**<br> 4 4 VGS= -10V Ta=25°CPulsed 10 PulsedVDS= -10V<br>VGS= -4.5V VGS= -1.8V<br>3 VGS= -2.5V 3 1 Ta= 125°C<br>VGS= -1.8V VGS= -1.5V Ta= 75°C<br>VGS= -1.5V VGS= -1.3V Ta= 25 ° C<br>2 2 0.1 Ta= - 25°C<br>Ta=25°C<br>Pulsed VGS= -1.2V<br>1 VGS= -1.3V 1 0.01<br>VGS= -1.1V VGS= -1.1V<br>0 0 0.001<br>0 0.2 0.4 0.6 0.8 1 0 2 4 6 8 10 0 0.5 1 1.5<br>DRAIN-SOURCE VOLTAGE : -VDS[V] DRAIN-SOURCE VOLTAGE : -VDS[V] GATE-SOURCE VOLTAGE : -VGS[V]<br>Fig.1 Typical Output Characteristics(Ⅰ) Fig.2 Typical Output Characteristics(Ⅱ) Fig.3 Typical Transfer Characteristics<br>1000 Ta=25°C 1000 VGS= -4.5V 1000 VGS= -2.5V<br>Pulsed VGS= -1.5V Pulsed Ta=125°C Pulsed Ta= -25°C<br>VGS= -1.8V Ta=75°C Ta=25°C<br>VGS= -2.5V Ta=25°C Ta=75°C<br>VGS= -4.5V Ta= -25 ° C Ta=125°C<br>100 100 100<br>10 10 10<br>0.1 1 10 0.1 1 10 0.1 1 10<br>DRAIN-CURRENT : -ID[A] DRAIN-CURRENT : -ID[A] DRAIN-CURRENT : -ID[A]<br>Fig.4 Static Drain-Source On-State Fig.5 Static Drain-Source On-State Fig.6 Static Drain-Source On-State<br> Resistance vs. Drain Current(Ⅰ) Resistance vs. Drain Current(Ⅱ) Resistance vs. Drain Current(Ⅲ)<br>1000 1000 100<br>VGS= -1.8V Ta=125°C VGS= -1.5V Ta=125°C VDS= -10V<br>Pulsed Ta=75 ° C Pulsed Ta=75 ° C Pulsed<br>Ta=25°C Ta=25°C<br>Ta= -25°C Ta= -25°C<br>10<br>100 100 Ta= -25°C<br>Ta=25°C<br>1 Ta=75°C<br>Ta=125°C<br>10 10 0<br>0.1 1 10 0.1 1 10 0.1 1 10<br>DRAIN-CURRENT : -ID[A] DRAIN-CURRENT : -ID[A] DRAIN-CURRENT : -ID[A]<br>Fig.7 Static Drain-Source On-State Fig.8 Static Drain-Source On-State Fig.9 Forward Transfer Admittance<br> Resistance vs. Drain Current(Ⅳ) Resistance vs. Drain Current(Ⅳ) vs. Drain Current<br>[A]D [A]D [A]D<br>DRAIN CURRENT : -I DRAIN CURRENT : -I<br>DRAIN CURRENT : -I<br>]<br>Ω Ω] Ω]<br>(ON)[m<br>RESISTANCE : RDS (ON)[mDS (ON)[mDS<br>RESISTANCE : R RESISTANCE : R<br>STATIC DRAIN-SOURCE ON-STATE<br>STATIC DRAIN-SOURCE ON-STATE STATIC DRAIN-SOURCE ON-STATE<br>Ω(ON)[m] Ω(ON)[m]<br>DS DS<br>RESISTANCE : R RESISTANCE : R<br>STATIC DRAIN-SOURCE ON-STATE STATIC DRAIN-SOURCE ON-STATE<br>FORWARD TRANSFER ADMITTANCE : |Yfs| [S]<br>**----- End of picture text -----**<br> www.rohm.com **2009.06 - Rev.A** 6/8 ○c 2009 ROHM Co., Ltd. All rights reserved. Data Sheet **TT8M2** **==> picture [431 x 354] intentionally omitted <==** **----- Start of picture text -----**<br> 300 10 5<br>Ta=25°C VGS=0V<br>Pulsed Pulsed<br>250<br>4<br>ID= -2.5A Ta=125°C<br>200 1<br>Ta=75°C<br>Ta=25°C 3<br>150 Ta=-25°C<br>2<br>100 0.1 Ta=25°C<br>VDD= -10V<br>50 1 I D = -2.5A<br>ID= -1.2A RG=10Ω<br>Pulsed<br>0 0.01 0<br>0 2 4 6 8 10 0 0.2 0.4 0.6 0.8 1 1.2 0 2 4 6 8 10 12 14<br>GATE-SOURCE VOLTAGE : -VGS[V] SOURCE-DRAIN VOLTAGE : -VSD [V] TOTAL GATE CHARGE : Qg [nC]<br>Fig.10 Static Drain-Source On-State Fig.11 Reverse Drain Current Fig.12 Dynamic Input Characteristics<br> Resistance vs. Gate Source Voltage vs. Sourse-Drain Voltage<br>10000 10000 Ta=25°C<br>VDD= -10V<br>Ciss 1000 td(off) VR GS G=10Ω=-4.5V<br>1000 tf Pulsed<br>Coss<br>100<br>Crss<br>100<br>10<br>Ta=25°C<br>f=1MHz t r td(on)<br>10 VGS=0V 1<br>0.01 0.1 1 10 100 0.01 0.1 1 10<br>DRAIN-SOURCE VOLTAGE : -VDS[V] DRAIN-CURRENT : -ID[A]<br>Fig.13 Typical Capacitance<br> vs. Drain-Source Voltage Fig.14 Switching Characteristics<br>Ω(ON)[m] [V]GS<br>DS<br>RESISTANCE : R<br>STATIC DRAIN-SOURCE ON-STATE REVERSE DRAIN CURRENT : -Is [A] GATE-SOURCE VOLTAGE : -V<br>CAPACITANCE : C [pF] SWITCHING TIME : t [ns]<br>**----- End of picture text -----**<br> www.rohm.com **2009.06 - Rev.A** 7/8 ○c 2009 ROHM Co., Ltd. All rights reserved. Data Sheet **TT8M2** ## � **Measurement circuits** < Nch > **==> picture [305 x 97] intentionally omitted <==** **----- Start of picture text -----**<br> VGS ID Pulse Width<br>VDS<br>90%<br>RL 50% 50%<br>VGS 10%<br>D.U.T. VDS<br>10% 10%<br>RG VDD<br>90% 90%<br>td(on) tr td(off) tf<br>ton toff<br>**----- End of picture text -----**<br> Fig.1-1 Switching Time Measurement Circuit Fig.1-2 Switching Waveforms **==> picture [139 x 86] intentionally omitted <==** **----- Start of picture text -----**<br> VGS ID<br>VDS<br>RL<br>IG(Const.) D.U.T.<br>RG VDD<br>**----- End of picture text -----**<br> **==> picture [113 x 97] intentionally omitted <==** **----- Start of picture text -----**<br> VG<br>Qg<br>VGS<br>Qgs Qgd<br>Charge<br>**----- End of picture text -----**<br> Fig.2-1 Gate charge measurement circuit Fig.2-2 Gate Charge Waveform ## < Pch > **==> picture [152 x 106] intentionally omitted <==** **----- Start of picture text -----**<br> ID<br>VGS VDS<br>RL<br>D.U.T.<br>RG VDD<br>Fig.3-1 Switching time measurement circuit<br>**----- End of picture text -----**<br> **==> picture [131 x 100] intentionally omitted <==** **----- Start of picture text -----**<br> Pulse width<br>VGS 10%<br>50% 90% 50%<br>10% 10%<br>90% 90%<br>VDS<br>td(on) tr td(off) tf<br>ton toff<br>**----- End of picture text -----**<br> Fig.3-2 Switching waveforms **==> picture [147 x 85] intentionally omitted <==** **----- Start of picture text -----**<br> ID<br>VGS VDS<br>RL<br>IG(Const.) D.U.T.<br>RG VDD<br>**----- End of picture text -----**<br> **==> picture [113 x 97] intentionally omitted <==** **----- Start of picture text -----**<br> VG<br>Qg<br>VGS<br>Qgs Qgd<br>Charge<br>**----- End of picture text -----**<br> Fig.4-1 Gate charge measurement circuit Fig.4-2 Gate charge waveform ## � **Notice** This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit. www.rohm.com **2009.06 - Rev.A** 8/8 ○c 2009 ROHM Co., Ltd. All rights reserved. Notice ## **N o t e s** No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. Great care was taken in ensuring the accuracy of the information specified in this document. However, should you incur any damage arising from any inaccuracy or misprint of such information, ROHM shall bear no responsibility for such damage. The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM and other parties. ROHM shall bear no responsibility whatsoever for any dispute arising from the use of such technical information. The Products specified in this document are intended to be used with general-use electronic equipment or devices (such as audio visual equipment, office-automation equipment, communication devices, electronic appliances and amusement devices). The Products specified in this document are not designed to be radiation tolerant. While ROHM always makes efforts to enhance the quality and reliability of its Products, a Product may fail or malfunction for a variety of reasons. Please be sure to implement in your equipment using the Products safety measures to guard against the possibility of physical injury, fire or any other damage caused in the event of the failure of any Product, such as derating, redundancy, fire control and fail-safe designs. ROHM shall bear no responsibility whatsoever for your use of any Product outside of the prescribed scope or not in accordance with the instruction manual. The Products are not designed or manufactured to be used with any equipment, device or system which requires an extremely high level of reliability the failure or malfunction of which may result in a direct threat to human life or create a risk of human injury (such as a medical instrument, transportation equipment, aerospace machinery, nuclear-reactor controller, fuel-controller or other safety device). ROHM shall bear no responsibility in any way for use of any of the Products for the above special purposes. If a Product is intended to be used for any such special purpose, please contact a ROHM sales representative before purchasing. If you intend to export or ship overseas any Product or technology specified herein that may be controlled under the Foreign Exchange and the Foreign Trade Law, you will be required to obtain a license or permit under the Law. **==> picture [80 x 61] intentionally omitted <==** Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ## ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2009 ROHM Co., Ltd. All rights reserved. R0039A
Updated at February 9, 2023
Founded with a steadfast commitment to a "Quality First" corporate policy, ROHM is a globally recognized leader in the design and manufacture of semiconductors and electronic components. Originally named for its foundational product, resistors, combined with the unit of resistance, the "R" in ROHM has evolved to represent the brand's enduring dedication to reliability. Today, the company is renowned for driving technological advancement and supplying high-performance, dependable solutions to engineers worldwide. The company's engineering excellence is most prominently showcased in its expansive portfolio of discrete semiconductors. ROHM provides an industry-leading selection of bipolar transistors, alongside a massive array of Zener single diodes, Schottky diodes, and small signal diodes. Engineered for rigorous efficiency and compact footprint requirements, these foundational components are critical for modern power management, precise signal processing, and high-speed switching applications. In addition to its core discrete offerings, ROHM delivers advanced power control and circuit protection solutions. This includes a highly trusted lineup of single and dual MOSFETs, single IGBTs, and transient voltage suppressors (TVS diodes) designed to safeguard sensitive circuitry. Complemented by intelligent power modules, precision sensors, and specialized ICs, ROHM equips designers with the premium components necessary to build the next generation of robust electronic infrastructure.
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