TSM2313CX

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## TSM2313 20V P-Channel MOSFET 

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SOT-23 _ Pin Definition: PRODUCT SUMMARY<br>st Gate Vos (V) lb (A)<br>| 3. Drain -3.3<br>12 -20 2.0<br>“1.0<br>**----- End of picture text -----**<br>


## Features 

## Block Diagram 

- e Advance Trench Process Technology 

- e High Density Cell Design for Ultra Low On-resistance Application e Load Switch ° PA Switch 

## Ordering Information 

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## Part No. Packing TSM2313CX RF _ Package 3Kpes / 7” Reel 

## Absolute Maximum Rating (Ta = 25°C unless otherwise noted) 

|Parameter<br>Drain-Source Voltage|||||Unit<br>Vv|
|---|---|---|---|---|---|
|Gate-Source Voltage|||||Vv|
|Continuous Drain Current,Ves@4.5V.<br>Pulsed Drain Current,Ves@4.5V||a<br>ae|ee<br>ee|ee<br>ee|A<br>A|
|Continuous Source Current (Diode Conduction)*”|||||A|
|MaximumPowerDissipation|fenmc||p,|| 2||Ww|
|Operating Junction Temperature|||||°C|
|OperatingJunctionandStorageTemperatureRange|||||°C|



## Thermal Performance 

|Thermal Performance||
|---|---|
|Parameter|Unit|
|Junction to Case Thermal Resistance|°C/W|
|Junction to Ambient Thermal Resistance (PCB mounted)|°C/W|
|Notes:||



a. Pulse width limited by the Maximum junction temperature 

b. Surface Mounted on FR4 Board, t < 5 sec. 

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TS M231 3 20V P-Channel MOSFET 

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## Electrical Specifications (Ta = 25°C unless otherwise noted) 

|Static|||||
|---|---|---|---|---|
|Drain-Source Breakdown Voltage<br>Ves= OV, Ip=-250uUA<br>Gate Threshold Voltage<br>Vos= Ves, lo=-250uA <br>Gate BodyLeakage<br>Ves=#12V,Vos=0V_<br>Zero GateVoltage Drain Current<br>Vos=-20V, Ves =OV<br>On-StateDrain Current®<br>Vos=-5V,Ves=45V.<br>Vos=-4.5V,l=-3.3A<br>Drain-Source On-State Resistance* | Ves=-2.5V, Ip=-2.0A<br>Vos=-1.8V,l=-1.0A<br>Forward Transconductance*<br>Vos=-10V, Ip=-4.7A<br>Diode ForwardVoltage<br>ls=-17AVes=0V_<br>Dynamic”||| BVpss_| <br> | Vosom | <br>| less | <br>| bss =|<br>| nom | <br>| <br>Rpsvon) | <br>| <br>|og. | <br>| Vso ||-20 | - | - |<br> -06 | -<br>| -14 |<br> -~ | ~ | #100 |<br>|<br>Lt<br>|<br> 18 | = |=<br> = | 65 | 70 |<br> - | 70 | 90 |<br> = | 120| 130_|<br> - |<br>14 | =<br>|<br> ~ | 08 | 42|Vv<br>Vv<br>na<br>HA<br>1A<br>mOQ<br>s<br>|v|
|Gate-SourceCharge|Vecasy<br>Le|||| te |||one|
|Switching®|||||
|Turn-On DelayTime<br>.<br>.|Vpp = -10V, RL= 100,|ee<br>eeee|||
|;<br>Turn-OffDelayTime<br>Turn-Off Fall Time<br>Notes:|lb= -1A, VoeEn=-4.5V,<br>Re= 60|| tao | |<br>45 | 70<br>ee<br>eeee||ns|



a. pulse test: PW <300US, duty cycle <2% 

b. For DESIGN AID ONLY, not subject to production testing. 

b. Switching time is essentially independent of operating temperature. 

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Vop ton toff<br>VIN Ro tdon) te= ta(off re<br>D Vout<br>VGEN Output, Vout 10% 10% INVERTED<br>a G DUT<br>TL G 90%,<br>50% 50%<br>a Input, Vin 10% 4<br>PULSE WIDTH<br>**----- End of picture text -----**<br>


Switching Test Circuit 

## Switchin Waveforms 

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## Electrical Characteristics Curve (Ta = 25°C, unless otherwise noted) 

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Output Characteristics Transfer Characteristics<br>20eee) 20Seyy<br>“WATT OF “7<br>=| WO ea tt fn<br>2) eee eee eee<br>:a! (re a ee /a<br>poyo | Ldy<br>a 1 5 3 4 5 (OOS 10 15°20 25 30 35 40<br>Vos - Drain-to-Source Voltage (V) Ves - Gate-to-Source Voltage (V)<br>On-Resistance vs. Drain Current Gate Charge<br>200 > 5<br>E 160 & 4 “4. Z|<br>ga tt |tt |g | pee |<br>pofent|<br>[120] o 3 ZL<br>[§] Cc (7 | ett<br>Sept tee| fg<br>° ee gif itit<br>ce cee 8 sf<br>oa > 0<br>ETTor 7 3 12ET]16 20 s¥it0 1 2 3 It4 5 6 7 #68<br>lo<br>- Drain Current (A) Qg - Total Gate Charge (nC)<br>On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage<br>e 1.6ttweem-ttt fT a30<br>cet ee<br>oesgutt+tttti| 5 SS<br>Fey} | | | | Pr 5 oofe<br>62, | | | Lepr ft | 3 SSS<br>se | | bt | tt oe<br>2 pee 7 Bes:<br>ober | | | | | | =<br>athe ee<br>0 -25 O 25 50 75 100 125 150 0 02 04 06 08 10 12 14 1.6<br>Tj - Junction Temperature (°C) Vsp - Source-to-Drain Voltage (V)<br>**----- End of picture text -----**<br>


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TSM2313 20V P-Channel MOSFET 

## Electrical Characteristics Curve (Ta = 25°C, unless otherwise noted) 

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On-Resistance vs. Gate-Source Voltage Threshold Voltage<br>0.20 0.6<br>@ 0.16 ae<br>et ft it | atEET<br>[@] bO" o a [0.12] | VT= TP) FLLg 0.2 ee"1<br>a G<br>eeee eee<br>-<br>Se<br>0-0.4<br>0 1 2 3 4 5 -50 -25 0 25 50 75 100 125 150<br>Ves - Gate-to-Source Voltage (V) Tj - Junction Temperature (°C)<br>Single Pulse Power<br>‘ Ye a<br>: : SU ANT AU A<br>A ;X<br>20 IN ‘f<br>"UTNE<br>TN0 ASUimac aa<br>10° 10°? 10° 1 100 600<br>Tiime (sec)<br>**----- End of picture text -----**<br>


Normalized Thermal Transient Impedance, Junction-to-Ambient 

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# TS M231 3 20V P-Channel MOSFET 

## SOT-23 Mechanical Drawing 

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D<br>rs SOT-23 DIMENSION<br>—l¥ir S >| HY DIM ainMILLIMETERSMAX MININCHESMAX.<br>0.95 BSC 0.037 BSC<br>aa | B | 2601.9 BSC| 300 | o1 0 .0742 | BSC0118<br>C 1.40 1.70 0.055 0.067<br>looIf la. ; 7 | D | 280 | 310 | 0.110<br>|<br>| | E | 100 | 130 | 0.039 | 0.051<br>| , LF | 000 | 040 | 0.000<br>a a G 0.35 0.50 0.014 0.020<br>rat | 0.008<br>al<br>J<br>UL E | ;<br>**----- End of picture text -----**<br>


## Marking Diagram 

3 13 = Device Code Y = Year Code M = Month Code 1 3YML (AI **=** JanSep **,** B=Feb,J=Oct, K=Nov,C=Mar, L=Dec)D=Apl, E=May, F=Jun, G=Jul, H=Aug, L =Lot Code JU 1 2 

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## TS M231 3 20V P-Channel MOSFET 

## Notice 

Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. 

Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. 

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