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TSM2307CX RFG
Power MOSFET, P Channel, 30 V, 3 A, 0.076 ohm, SOT-23, Surface Mount
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: TAIWAN SEMICONDUCTOR
- Product type: Single MOSFETs
- Transistor Polarity:P Channel; Continuous Drain Current Id:-3A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.076ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-3V; Po
- MSL: MSL 3 - 168 hours
- SVHC: No SVHC (17-Jan-2023)
- No. of Pins: 3Pins
- Channel Type: P Channel
- Product Range: -
- Qualification: -
- Power Dissipation: 1.25W
- Transistor Mounting: Surface Mount
- Rds(on) Test Voltage: 10V
- Transistor Case Style: SOT-23
- Drain Source Voltage Vds: 30V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 3A
- Drain Source On State Resistance: 0.076ohm
- Gate Source Threshold Voltage Max: 3V
| Delivery and price | |
|---|---|
| Units per pack | 1500 |
| Price | 0.722 € |
| Current stock | 1000+ |
| Lead time | 30 days |
## **TSM2307CX** 30V P-Channel MOSFET ## **SOT-23** ## **Pin Definition:** 1. Gate 2. Source 3. Drain ## **Key Parameter Performance** |**Parameter**|**Parameter**|**Value**|**Unit**| |---|---|---|---| |VDS||-30|V| |RDS(on)(max)|VGS= -10V|95|mΩ| ||VGS= -4.5V|140|| |Qg||10|nC| ## **Features** ## **Block Diagram** - Advance Trench Process Technology - High Density Cell Design for Ultra Low On-resistance ## **Application** - Load Switch - PA Switch ## **Ordering Information** |**Part No.**<br>~~ee~~|**Package**|**Packing**| |---|---|---| |TSM2307CX RFG<br>~~ee~~|SOT-23|3kpcs / 7” Reel| P-Channel MOSFET **Note:** “G” denotes for Halogen- and Antimony-free as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds ## **Absolute Maximum Ratings** (TC = 25 ℃ unless otherwise noted) |**Parameter**|**Parameter**|**Symbol**<br>~~es~~|**Limit**|**Unit**| |---|---|---|---|---| |Drain-Source Voltage||VDS<br>~~es~~<br>~~es~~|-30|V| |Gate-Source Voltage||VGS<br>~~es~~<br>~~es~~<br>~~es~~|±20|V| |Continuous Drain Current(Note 1)||ID<br>~~es~~<br>~~es~~<br>~~es~~|-3|A| |Pulsed Drain Current(Note 2)<br>~~oo~~||IDM<br>~~es~~<br>~~es~~<br>~~es~~|-20|A| |Continuous Source Current(Diode Conduction)<br>~~oo~~||IS<br>~~es~~<br>~~es~~|-1.7|A| |Power Dissipation|Ta= 25℃<br>~~oo~~|PD<br>~~es~~<br>~~es~~|1.25|W| ||Ta= 75℃<br>~~oo~~<br>~~I~~||0.8|| |OperatingJunction Temperature<br>~~I~~||TJ<br>~~es~~<br>~~es~~|+150|℃| |Storage Temperature Range<br>~~I~~||TSTG<br>~~es~~<br>~~es~~|-50 to +150|℃| Document Number: DS_P0000048 1 Version: D15 ## **TSM2307CX** 30V P-Channel MOSFET ## **Thermal Performance** ||**Parameter**||**Symbol**||**Limit**|**Limit**|||**Unit**| |---|---|---|---|---|---|---|---|---|---| ||Thermal Resistance - Junction to Case||RӨJC||75||||℃/W| ||Thermal Resistance - Junction to Ambient||RӨJA||130|130|||℃/W| |**Electrical Specifications**(TC= 25℃unless otherwise noted)<br>**Parameter**<br>**Conditions**<br>**Symbol**<br>**Min**<br>**Typ**<br>**Max**<br>**Unit**<br>**Static**<br>~~ee~~|||||||||| ||Drain-Source Breakdown Voltage|VGS= 0V, ID= -250µA<br>BVDSS<br>-30<br>--<br>--<br>~~eS~~|||||||V| ||Drain-Source On-State Resistance<br>Gate Threshold Voltage<br>Zero Gate Voltage Drain Current<br>Gate Body Leakage<br>Forward Transconductance(Note 4)<br>Diode Forward Voltage|VGS= -10V, ID= -3A<br>RDS(ON)<br>--<br>76<br>95<br>VGS= -4.5V, ID= -2A<br>--<br>103<br>140<br>VDS= VGS, ID= -250µA<br>VGS(TH)<br>-1<br>--<br>-3<br>VDS= -30V, VGS= 0V<br>IDSS<br>--<br>--<br>-1.0<br>VGS= ±20V, VDS= 0V<br>IGSS<br>--<br>--<br>±100<br>VDS= -10V, ID= -6A<br>gfs<br>--<br>5<br>--<br>IS= -1.7V, VGS= 0V<br>VSD<br>-1.2<br>~~re~~<br>~~Se~~<br>~~le~~<br>~~le~~<br>~~le~~<br>~~le~~<br>~~eS~~|||||||mΩ<br>mΩ<br>V<br>µA<br>nA<br>S<br>V| ||**Dynamic **||||||||| ||Total Gate Charge(Note 3,4)|||Qg|--|10|15||| ||Gate-Source Charge(Note 3,4)<br>Gate-Drain Charge(Note 3,4)|VDS= -15V, ID= -3A,<br>VGS= -10V||Qgs<br>Qgd|--<br>--|1.9<br>2|--<br>--||nC| ||Input Capacitance|||Ciss|--|565|--||| ||Output Capacitance|VDS= -30V, VGS= 0V,<br>f = 1.0MHz||Coss|--|126|--||pF| ||Reverse Transfer Capacitance|||Crss|--|75|--||| ||**Switching **||||||||| ||Turn-On Delay Time(Note 3,4))|||td(on)|--|10|20||| ||Turn-On Rise Time(Note 3,4)|VDD= -15V, RL= 15Ω,||tr|--|9|20||| ||Turn-Off Delay Time(Note 3,4)<br>Turn-Off Fall Time(Note 3,4)|ID= -1A, VGEN= -10V,<br>RG=6Ω||td(off)<br>tf|--<br>--|27<br>7|50<br>16||ns| **Note:** 1. Limited by maximum junction temperature 2. Pulse width limited by safe operating area 3. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2% 4. Switching time is essentially independent of operating temperature. Document Number: DS_P0000048 2 Version: D15 ## **TSM2307CX** 30V P-Channel MOSFET ## **Electrical Characteristics Curve** **Output Characteristics** **Transfer Characteristics** **On-Resistance vs. Drain Current** **Gate Charge** **On-Resistance vs. Junction Temperature** **Source-Drain Diode Forward Voltage** Document Number: DS_P0000048 3 Version: D15 ## **TSM2307CX** 30V P-Channel MOSFET ## **Electrical Characteristics Curve** ## **On-Resistance vs. Gate-Source Voltage** **Threshold Voltage** **Single Pulse Power** ## **Normalized Thermal Transient Impedance, Junction-to-Ambient** Document Number: DS_P0000048 4 Version: D15 **TSM2307CX** 30V P-Channel MOSFET ## **- SOT 23 Mechanical Drawing** Unit: Millimeters ## **Marking Diagram** **07** = Device Code **Y** = Year Code **M** = Month Code for Halogen Free Product **O** =Jan **P** =Feb **Q** =Mar **R** =Apr **S** =May **T** =Jun **U** =Jul **V** =Aug **W** =Sep **X** =Oct **Y** =Nov **Z** =Dec **L** = Lot Code Document Number: DS_P0000048 5 Version: D15 ## **TSM2307CX** 30V P-Channel MOSFET ## **Notice** Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. Document Number: DS_P0000048 6 Version: D15
Updated at April 29, 2026
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