TSM2302CX

## **TSM2302** 20V N-Channel MOSFET 

## **SOT-23** 

## **Pin Definition:** 

1. Gate 

2. Source 3. Drain 

## **Key Parameter Performance** 

|**Parameter**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|VDS||20|V|
|RDS(on)(max)|VGS= 4.5V|65|mΩ|
||VGS= 2.5V|95||
|Qg||5.4|nC|



## **Features** 

## **Block Diagram** 

- Advance Trench Process Technology 

- High Density Cell Design for Ultra Low On-resistance 

## **Application** 

- Load Switch 

- PA Switch 

## **Ordering Information** 

## **Part No. Package Packing** ~~+~~ TSM2302CX RFG SOT-23 3,000pcs / 7” Reel 

**Note:** “G” denotes for Halogen- and Antimony-free as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds 

N-Channel MOSFET 

**Absolute Maximum Ratings** (TC = 25°C, unless otherwise noted) 

|**Parameter**|**Parameter**|**Symbol**<br>~~es~~|**Limit**<br>~~ee~~|**Unit**|
|---|---|---|---|---|
|Drain-Source Voltage||VDS<br>~~es~~<br>~~ee~~<br>~~ee~~|20<br>~~ee~~<br>~~ee~~<br>~~ee~~|V|
|Gate-Source Voltage||VGS<br>~~ee~~<br>~~es~~|±8<br>~~ee~~<br>~~ee~~|V|
|Continuous Drain Current||ID<br>~~ee~~<br>~~es~~<br>~~ee~~|2.8<br>~~ee~~<br>~~ee~~<br>~~ee~~|A|
|Pulsed Drain Current(Note 1)||IDM<br>~~es~~<br>~~ee~~|8<br>~~ee~~<br>~~ee~~|A|
|Continuous Source Current(Diode Conduction) (Note 2)<br>~~|~~||IS<br>~~ee~~<br>~~FS~~|1.6<br>~~ee~~<br>~~FS~~|A|
|Maximum Power Dissipation<br>~~|~~|Ta = 25°C<br>~~|~~<br>~~—~~|PD<br>~~FS~~<br>~~+~~<br>~~ee~~|1.25<br>~~FS~~|W|
||Ta = 75°C<br>~~|~~<br>~~—~~||0.8<br>~~FS~~<br>~~ee~~||
|OperatingJunction and Storage Temperature Range||TJ,TSTG<br>~~ee~~|-55 to +150<br>~~ee~~|°C|



## **Thermal Performance** 

|**Parameter**|**Symbol**|**Limit**|**Unit**|
|---|---|---|---|
|Thermal Resistance Junction to Case|RӨJC|75|°C/W|
|Thermal Resistance Junction to Ambient|RӨJA|145|°C/W|



Document Number: DS_P0000044                                    1 Version: D15 

## **TSM2302** 20V N-Channel MOSFET 

## **Electrical Specifications** 

|**Parameter**|**Conditions**<br>**Symbol**<br>**Min**<br>**Typ**<br>**Max**|**Unit**|
|---|---|---|
|**Static(Note 3)**|||
|Drain-Source Breakdown Voltage<br>Gate Threshold Voltage<br>Gate BodyLeakage<br>Zero Gate Voltage Drain Current<br>On-State Drain Current|VGS= 0V,ID= 250uA<br>BVDSS<br>20<br>--<br>--<br>VDS= VGS,ID= 250uA<br>VGS(TH)<br>0.65<br>0.95<br>1.2<br>VGS= ±8V,VDS= 0V<br>IGSS<br>--<br>--<br>±100<br>VDS= 16V,VGS= 0V<br>IDSS<br>--<br>--<br>1.0<br>VDS= 5V,VGS= 4.5V<br>ID(ON)<br>6<br>--<br>--<br>~~ee~~<br>~~ee~~<br>~~ee ee~~<br>~~ee~~<br>~~ee~~<br>~~es ee~~<br>~~es~~<br>~~ee es~~<br>~~ee~~|V<br>V<br>nA<br>μA<br>A|
|Drain-Source On-State Resistance<br>Forward Transconductance<br>Diode Forward Voltage<br>**Dynamic(Note 4)**|VGS= 4.5V,ID= 2.8A<br>RDS(ON)<br>--<br>40<br>65<br>VGS= 2.5V,ID= 2.0A<br>--<br>50<br>95<br>VDS= 5V,ID= 2.8A<br>gfs<br>--<br>10<br>--<br>IS= 1.6A,VGS= 0V<br>VSD<br>--<br>0.76<br>1.2<br>~~——~~<br>~~a~~<br>~~ee~~<br>~~es ee~~<br>~~ee~~<br>~~es~~<br>~~ee~~<br>~~ee~~|mΩ<br>S<br>V|
|Total Gate Charge<br>Gate-Source Charge<br>Gate-Drain Charge|VDS= 10V, ID= 2.8A,<br>VGS= 4.5V<br>Qg<br>--<br>5.4<br>10<br>Qgs<br>--<br>0.65<br>--<br>Qgd<br>--<br>1.4<br>--|nC|
|Input Capacitance<br>Output Capacitance|VDS= 10V, VGS= 0V,<br>f = 1.0MHz<br>Ciss<br>--<br>340<br>--<br>Coss<br>--<br>115<br>--|pF|
|Reverse Transfer Capacitance|Crss<br>--<br>33<br>--||
|**Switching(Note 5)**|||
|Turn-On DelayTime<br>Turn-On Rise Time<br>Turn-Off DelayTime|VDD= 6V, RL= 10Ω,<br>ID= 1A, VGEN= 4.5V,<br>RG= 6Ω<br>td(on)<br>--<br>12<br>25<br>tr<br>--<br>36<br>60<br>td(off)<br>--<br>34<br>60|ns|
|Turn-Off Fall Time|tf<br>--<br>10<br>25||



## **Notes:** 

1. Pulse width limited by the maximum junction temperature 

2. Surface Mounted on FR4 Board t ≤ 5 sec. 

3. Pulse test: PW ≤ 300µs, duty cycle ≤ 2% 

4. For DESIGN AID ONLY, not subject to production testing. 

5. Switching time is essentially independent of operating temperature. 

Document Number: DS_P0000044                                    2 Version: D15 

**TSM2302** 20V N-Channel MOSFET 

## **Electrical Characteristics Curve** 

**Output Characteristics** 

**On-Resistance vs. Drain Current** 

**On-Resistance vs. Junction Temperature** 

**Transfer Characteristics** 

**Gate Charge** 

**Source-Drain Diode Forward Voltage** 

## **Electrical Characteristics Curve** 

Document Number: DS_P0000044                                    3 Version: D15 

## **TSM2302** 20V N-Channel MOSFET 

## **On-Resistance vs. Gate-Source Voltage** 

**Threshold Voltage** 

**Single Pulse Power** 

**Normalized Thermal Transient Impedance, Junction-to-Ambient** 

Document Number: DS_P0000044                                    4 Version: D15 

**TSM2302** 

## 20V N-Channel MOSFET 

## **- SOT 23 Mechanical Drawing** 

Unit: Millimeters 

## **Marking Diagram** 

**2** = Device Code 

**Y** = Year Code 

**M** = Month Code for Halogen Free Product **O** =Jan **P** =Feb **Q** =Mar **R** =Apr **S** =May **T** =Jun **U** =Jul **V** =Aug **W** =Sep **X** =Oct **Y** =Nov **Z** =Dec **L** = Lot Code 

Document Number: DS_P0000044                                    5 Version: D15 

**TSM2302** 20V N-Channel MOSFET 

## **Notice** 

Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. 

Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. 

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 

Document Number: DS_P0000044                                    6 Version: D15