TSM2302CX RFG

Power MOSFET, N Channel, 20 V, 2.8 A, 0.04 ohm, SOT-23, Surface Mount

⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.

Manufacturer: TAIWAN SEMICONDUCTOR
Product type: Single MOSFETs
Transistor Polarity:N Channel; Continuous Drain Current Id:2.8A; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.04ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:950mV;
MSL: -
SVHC: No SVHC (17-Jan-2023)
No. of Pins: 3Pins
Channel Type: N Channel
Product Range: -
Qualification: -
Power Dissipation: 1.25W
Transistor Mounting: Surface Mount
Rds(on) Test Voltage: 4.5V
Transistor Case Style: SOT-23
Drain Source Voltage Vds: 20V
Operating Temperature Max: 150°C
Continuous Drain Current Id: 2.8A
Drain Source On State Resistance: 0.04ohm
Gate Source Threshold Voltage Max: 950mV

Delivery and price
Units per pack	1500
Price	0.164 €
Current stock	1000+
Lead time	30 days

Datasheet

**TSM2302CX** KD ER EEE Taiwan Semiconductor 

## **N-Channel Power MOSFET** 

20V, 3.9A, 65mΩ 

## FEATURES 

- Low RDS(ON) to minimize conductive losses 

- Low gate charge for fast power switching 

- Compliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC 

- Halogen-free according to IEC 61249-2-21 

|KEY PERFORMANCE PARAMETERS|KEY PERFORMANCE PARAMETERS|KEY PERFORMANCE PARAMETERS|KEY PERFORMANCE PARAMETERS|
|---|---|---|---|
|PARAMETER||VALUE|UNIT|
|VDS||20|V|
|RDS(on)(max)|VGS= 4.5V|65|mΩ|
||VGS= 2.5V|95||
|Qg||7.8|nC|



## APPLICATIONS 

- Load switch 

- Backlights 

**==> picture [36 x 9] intentionally omitted <==**

**----- Start of picture text -----**<br>
SOT-23<br>**----- End of picture text -----**<br>


**Note:** MSL 3 (Moisture Sensitivity Level) per J-STD-020 

|ABSOLUTE MAXIMUM RATINGS (TA= 25°C unless otherwise noted)|ABSOLUTE MAXIMUM RATINGS (TA= 25°C unless otherwise noted)|ABSOLUTE MAXIMUM RATINGS (TA= 25°C unless otherwise noted)|ABSOLUTE MAXIMUM RATINGS (TA= 25°C unless otherwise noted)|ABSOLUTE MAXIMUM RATINGS (TA= 25°C unless otherwise noted)|
|---|---|---|---|---|
|PARAMETER||SYMBOL|LIMIT|UNIT|
|Drain-Source Voltage||VDS|20|V|
|Gate-Source Voltage||VGS|±8|V|
|Continuous Drain Current**(Note 1)**|TC= 25°C|ID|3.9|A|
||TA= 25°C||3.2||
|Pulsed Drain Current||IDM|15.6|A|
|Total Power Dissipation|TC = 25°C|PD|1.5|W|
||TC = 125°C||0.3||
|Total Power Dissipation|TA= 25°C|PD|1|W|
||TA= 125°C||0.2||
|OperatingJunction and Storage Temperature Range||TJ,TSTG|- 55 to +150|°C|



**Thermal Performance Note:** RӨJA is the sum of the junction-to-case and case-to-ambient thermal resistances. The casethermal reference is defined at the solder mounting surface of the drain pins. RӨJA is guaranteed by design while RӨCA is determined by the user’s board design. 

1 Version: E1608 

g SEMICONDUCTOR[lpg **TSM2302CX** Taiwan Semiconductor 

|ELECTRICAL SPECIFICATIONS (TA= 25°C unless otherwise noted)<br>~~a~~|ELECTRICAL SPECIFICATIONS (TA= 25°C unless otherwise noted)<br>~~a~~|ELECTRICAL SPECIFICATIONS (TA= 25°C unless otherwise noted)<br>~~a~~|ELECTRICAL SPECIFICATIONS (TA= 25°C unless otherwise noted)<br>~~a~~|ELECTRICAL SPECIFICATIONS (TA= 25°C unless otherwise noted)<br>~~a~~|ELECTRICAL SPECIFICATIONS (TA= 25°C unless otherwise noted)<br>~~a~~|ELECTRICAL SPECIFICATIONS (TA= 25°C unless otherwise noted)<br>~~a~~|
|---|---|---|---|---|---|---|
|PARAMETER<br>~~se~~|CONDITIONS<br>~~se~~|SYMBOL<br>~~se~~|MIN<br>~~se~~|TYP<br>~~se~~|MAX<br>~~se~~|UNIT<br>~~se~~|
|**Static **<br>~~a~~<br>~~se~~|||||||
|Drain-Source Breakdown Voltage<br>~~a~~<br>~~es~~|VGS= 0V, ID= 250µA<br>~~a~~<br>~~es~~<br>~~se~~<br>~~se~~|BVDSS<br>~~a~~<br>~~es~~<br>~~se~~<br>~~se~~|20<br>~~a~~<br>~~es~~|--<br>~~a~~<br>~~es~~|--<br>~~a~~<br>~~es~~|V<br>~~a~~<br>~~es~~|
|Gate Threshold Voltage<br>~~ee~~|VGS= VDS, ID= 250µA<br>~~se~~<br>~~ee~~<br>~~se~~<br>~~s~~|VGS(TH)<br>~~se~~<br>~~ee~~<br>~~se~~<br>~~se~~|0.65<br>~~ee~~|0.9<br>~~ee~~|1.2<br>~~ee~~|V<br>~~ee~~|
|Gate-Source Leakage Current<br>~~ee~~|VGS= ±8V, VDS= 0V<br>~~se~~<br>~~ee~~<br>~~s~~<br>~~ce~~|IGSS<br>~~se~~<br>~~ee~~<br>~~se~~|--<br>~~ee~~|--<br>~~ee~~|±100<br>~~ee~~|nA<br>~~ee~~|
|Drain-Source Leakage Current<br>~~a~~|VGS= 0V, VDS= 20V<br>~~s~~<br>~~a~~<br>~~ce~~|IDSS<br>~~se~~<br>~~a~~|--<br>~~a~~|--<br>~~a~~|1<br>~~a~~|µA<br>~~a~~|
||VGS= 0V, VDS= 20V<br>TJ= 125°C<br>~~a~~<br>~~ce~~||--<br>~~a~~|--<br>~~a~~|100<br>~~a~~||
|Drain-Source On-State Resistance<br>**(Note 2)**<br>~~ee~~<br>~~po~~<br>~~a~~|VGS= 4.5V,ID= 3.2A<br>~~ce~~<br>~~ee~~<br>~~po~~<br>|RDS(on)<br>~~ee~~<br><br>|--<br>~~ee~~<br>~~|~~<br>|34<br>~~ee~~<br>~~|~~<br>|65<br>~~ee~~<br>~~|~~<br>|mΩ<br>~~ee~~<br>|
||VGS= 2.5V, ID= 3.2A<br>~~ce~~<br>~~ee~~<br>~~po~~<br>||--<br>~~ee~~<br>~~|~~<br>|45<br>~~ee~~<br>~~|~~<br>|95<br>~~ee~~<br>~~|~~<br>||
|Forward Transconductance**(Note 2)**<br>~~ee~~<br>~~po~~<br>~~a~~|VDS= 5V, ID= 3.2A<br>~~ee~~<br>~~po ~~<br>|gfs<br>~~ee~~<br> <br>|--<br>~~ee~~<br> ~~|~~<br>|19<br>~~ee~~<br>~~|~~<br>|--<br>~~ee~~<br>~~|~~<br>|S<br>~~ee~~<br>|
|**Dynamic (Note 3)**<br>~~a~~|||||||
|Total Gate Charge<br>~~a~~<br>~~oo~~<br>~~oo~~|VGS= 4.5V, VDS= 10V,<br>ID= 3.2A<br>~~a~~|Qg<br>~~a~~<br>~~ee~~|--<br>~~a~~<br>~~ee~~<br>~~ee ee~~|7.8<br>~~a~~<br>~~ee~~<br>~~ee~~|--<br>~~a~~<br>~~ee~~<br>~~ee~~|nC<br>~~a~~|
|Total Gate Charge<br>~~oo~~<br>~~oo~~<br>~~oo~~|VGS= 2.5V, VDS= 10V,<br>ID= 3.2A|Qg<br>~~ee~~|--<br>~~ee~~<br>~~ee ee~~<br>~~ee~~|5<br>~~ee~~<br>~~ee~~<br>~~ee~~|--<br>~~ee~~<br>~~ee~~<br>~~ee~~||
|Gate-Source Charge<br>~~oo~~<br>~~oo~~<br>~~oo~~<br>~~oo~~||Qgs<br>~~ee~~<br>~~ee~~<br>~~ee~~|--<br>~~ee~~<br>~~ee ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|1<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|--<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~||
|Gate-Drain Charge<br>~~oo~~<br>~~oo~~<br>~~oo~~<br>~~oo~~||Qgd<br>~~ee~~<br>~~ee~~<br>~~ee~~|--<br>~~ee ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~eee~~|2.5<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~eee~~|--<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~||
|Input Capacitance<br>~~oo~~<br>~~oo~~<br>~~oo~~<br>~~oo~~|VGS= 0V, VDS= 10V<br>f = 1.0MHz|Ciss<br>~~ee~~<br>~~ee~~<br>~~**ee**~~|--<br>~~ee ~~<br>~~ee~~<br>~~eee~~<br>~~**eee**~~|587<br> ~~ee ~~<br>~~ee~~<br>~~eee~~<br>~~**eee**~~|--<br> ~~ee~~<br>~~ee~~<br>~~ee~~<br>~~**ee**~~|pF|
|Output Capacitance<br>~~oo~~<br>~~oo~~<br>~~oo~~||Coss<br>~~ee ~~<br>~~ee~~<br>~~**ee**~~|--<br> ~~ee~~<br>~~eee~~<br>~~**eee**~~|94<br>~~ee ~~<br>~~eee~~<br>~~**eee**~~|--<br> ~~ee~~<br>~~ee~~<br>~~**ee**~~||
|Reverse Transfer Capacitance<br>~~oo~~<br>~~oo~~||Crss<br>~~ee ~~<br>~~**ee**~~|--<br> ~~eee~~<br>~~**eee**~~|64<br>~~eee ~~<br>~~**eee**~~|--<br> ~~ee~~<br>~~**ee**~~||
|Gate Resistance<br>~~oo~~<br>~~es~~|f = 1.0MHz, open drain<br>~~es~~|Rg<br>~~**ee** ~~<br>~~es~~|--<br> ~~**eee**~~<br>~~es~~|1.6<br>~~**eee** ~~<br>~~es~~|--<br> ~~**ee**~~<br>~~es~~|Ω<br>~~es~~|
|**Switching (Note 3)**<br>~~a~~<br>~~eeeeee~~<br>~~a~~|||||||
|Turn-On Delay Time<br>~~a~~<br>~~a~~<br>~~a~~|VGS= 4.5V, VDS= 10V,<br>ID= 3.2A, RG= 2Ω,<br>~~a~~<br>~~a~~<br>~~a~~|td(on)<br>~~a~~<br>~~ee~~<br>~~ee~~|--<br>~~a~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|5.4<br>~~a~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|--<br>~~a~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|ns<br>~~a~~|
|Turn-On Rise Time<br>~~a~~<br>~~a~~<br>~~a~~||= 10V,<br>tr<br>~~ee~~<br>~~**e**e~~|--<br>~~ee ~~<br>~~ee~~<br>~~ee~~|26.4<br> ~~ee ~~<br>~~ee~~<br>~~ee~~|--<br> ~~ee~~<br>~~ee~~<br>~~ee~~||
|Turn-Off Delay Time<br>~~a~~<br>~~a~~||td(off)<br>~~ee ~~<br>~~**e**e~~|--<br> ~~ee~~<br>~~ee~~<br>~~ee~~|16.4<br>~~ee ~~<br>~~ee~~<br>~~ee~~|--<br> ~~ee~~<br>~~ee~~<br>~~ee~~||
|Turn-Off Fall Time<br>~~a~~||tf<br>~~**e**e ~~|--<br> ~~ee~~<br>~~e~~<br>~~ee~~|15.8<br>~~ee ~~<br>~~e~~<br>~~ee~~|--<br> ~~ee~~<br>~~e~~<br>~~ee~~||
|**Source-Drain Diode **<br>~~ee ee~~<br>~~eel~~<br>~~ss~~<br>~~SS~~|||||||
|Forward Voltage**(Note 2)**<br>~~Vs~~<br>~~SS~~|VGS = 0V,IS = 3.2A<br>~~Vs~~<br>~~ss~~|VSD<br>~~Vs~~<br>~~ss~~|--<br>~~Vs~~|--<br>~~Vs~~|1.2<br>~~Vs~~|V<br>~~Vs~~|
|Reverse Recovery Time<br>~~SS~~<br>~~oo~~|IS= 3.2A ,<br>dI/dt = 100A/μs<br>~~ss~~|trr<br>~~ss~~<br>~~e~~|--<br>~~e~~<br>~~ee~~|19<br>~~e~~~~**e**~~<br>~~e~~|--<br>~~**e**~~<br>~~ee~~|ns<br>~~**e**~~|
|Reverse Recovery Charge<br>~~SS~~<br>~~oo~~||Qrr<br>~~ss~~<br>~~e~~<br>~~ee~~|--<br>~~e~~<br>~~ee~~<br>~~ee~~|8<br>~~e~~~~**e**~~<br>~~ee~~<br>~~e~~|--<br>~~**e**~~<br>~~ee~~<br>~~ee~~|nC<br>~~**e**~~<br>~~ee~~|



2. Pulse test: Pulse Width ≤ 300µs, duty cycle ≤ 2%. 

3. Switching time is essentially independent of operating temperature. 

## ORDERING INFORMATION 

|PART NO.|PACKAGE|PACKING|
|---|---|---|
|TSM2302CX RFG|SOT-23|3,000pcs / 7” Reel|



2 Version: E1608 

**TSM2302CX** Taiwan Semiconductor $5 Eee$$$ 

## CHARACTERISTICS CURVES 

(TA = 25°C unless otherwise noted) 

**==> picture [495 x 410] intentionally omitted <==**

**----- Start of picture text -----**<br>
        Output Characteristics         Transfer Characteristics<br>5 5<br>4 VGS=4.5V  4<br>VGS=2.5V<br>|} +t a ie<br>VGS=2V<br>VGS=1.6V<br>3 VGS=1.5V  3<br>Amz VGS=1.4V  a 25 ℃ ee<br>2 Ja 2 SS<br>1 VGS=1.3V  1<br>150 ℃ -55 ℃<br>VGS=1.2V<br>0 oe 0 i |<br>0 _—— 1 2 3 4 0 | 1 2 3 4<br>VDS, Drain to Source Voltage (V)  VGS, Gate to Source Voltage (V)<br>            On-Resistance vs. Drain Current          Gate-Source Voltage  vs. Gate Charge<br>0.05 4.5<br>4<br>VDS=10V<br>0.04 VGS=2.5V  3.5 ID=3.2A<br>a<br>3<br>a<br>2.5<br>0.03 VGS=4.5V<br>2 ae<br>1.5 ————<br>0.02<br>1<br>fo<br>0.5<br>0.01 0 fj<br>|<br>0 1 2 3 4 5 0 2 4 6 8<br>ID, Drain Current (A)  Qg, Gate Charge (nC)<br>, Drain Current (A) ID , Drain Current (A) ID<br>Ω)<br>, Gate to Source Voltage (V)<br>, Drain-Source On-Resistance (<br>GS<br>V<br>DS(ON)<br>R<br>**----- End of picture text -----**<br>


## **On-Resistance vs. Junction Temperature** 

**==> picture [241 x 198] intentionally omitted <==**

**----- Start of picture text -----**<br>
1.6<br>VGS=4.5V<br>1.4 ID=3.2A<br>1.2 T cairoe<br>1 COREE<br>0.8 COPEL<br>PPECEEEEL<br>0.6<br>-75 -50 -25 0 25 50 75 100 125 150<br>TJ, Junction Temperature (°C)<br>(Normalized)<br>, Drain-Source On-Resistance<br>DS(on)<br>R<br>**----- End of picture text -----**<br>


## **On-Resistance vs. Gate-Source Voltage** 

**==> picture [236 x 194] intentionally omitted <==**

**----- Start of picture text -----**<br>
0.08<br>0.07<br>0.06<br>0.05<br>0.04 ID=3.2A<br>0.03<br>0.02<br>0.01<br>0<br>1 2 3 4 5<br>VGS, Gate to Source Voltage (V)<br>, Drain-Source On-Resistance (Ω)<br>DS(on)<br>R<br>**----- End of picture text -----**<br>


3 Version: E1608 

**TSM2302CX** OR E>EE————————————————————————EE Taiwan Semiconductor 

## CHARACTERISTICS CURVES 

(TA = 25°C unless otherwise noted) 

## **Capacitance vs. Drain-Source Voltage** 

**==> picture [237 x 177] intentionally omitted <==**

**----- Start of picture text -----**<br>
1000<br>900<br>800<br>700<br>CISS<br>600 eS<br>500 eeeSS 4<br>400 a ee es<br>300<br>200 ee<br>COSS<br>100<br>CRSS<br>0 LD —T—o SS<br>0 4 8 12 16 20<br>VDS, Drain to Source Voltage (V)<br>C, Capacitance (pF)<br>**----- End of picture text -----**<br>


## **BVDSS vs. Junction Temperature** 

**==> picture [244 x 183] intentionally omitted <==**

**----- Start of picture text -----**<br>
1.2<br>ID=250uA<br>1.11 |} |ipberTT | 4<br>i _.<br>0.9<br>a<br>0.8<br>-75 -50 -25 0 25 50 75 100 125 150<br>TJ, Junction Temperature (°C)<br> (Normalized)<br>DSS<br>BV<br>Drain-Source Breakdown Voltage<br>**----- End of picture text -----**<br>


## **Maximum Safe Operating Area, Junction-to-Case** 

## **Source-Drain Diode Forward Current vs. Voltage** 

**==> picture [494 x 401] intentionally omitted <==**

**----- Start of picture text -----**<br>
100 100<br>R<br>DS(ON)<br>10<br>100us<br>10<br>L771a asTTee  ANT2 RSeee ee ee aa a a aA 2a |<br>1 ID SES 1ms  lll 4ff [——_]<br>10ms  150 ℃ 25 ℃ -55 ℃<br>1<br>easier eictice aeThil — | Z| ff |<br>100ms<br>0.1 TTI —<br>SINGLE PULSE  ——— =———= ey<br>RӨJC=84 ° C/W  S T DC  a yAA ey A A ee<br>TC=25 ° C<br>e e ———- —§- +}<br>0.01 — Eo _Ci 0.1 | ff ff | [|<br>0.1 1 10 100 0.2 0.4 0.6 0.8 1 1.2<br>VDS, Drain to Source Voltage (V)   VSD, Body Diode Forward Voltage (V)<br>Normalized Thermal Transient Impedance, Junction-to-Case<br>10<br>SINGLE PULSE<br>ee ee ee eee ee RӨJC=84 ° C/W CT<br>1 a eel<br>aa mn TTF ET<br>0.1 ee Duty=0.5  TUT| TE<br>Duty=0.2<br>Duty=0.1<br>SSeS Duty=0.05  = =e4ys ft<br>0.01 ET] TT | PT Duty=0.02  | rea}<br>Duty=0.01  Notes:<br>a ee eee Single  |_| Duty = tTJ = TC + P1 / tDM2  x ZӨJC x RӨJC [<br>0.001 oie Coie oo oti-_ I<br>0.0001 0.001 0.01 0.1 1 10<br>t, Square Wave Pulse Duration (sec)<br>, Drain Current (A)<br>ID<br>, Reverse Drain Current (A)<br>IS<br>ӨJC<br>Thermal Impedance, Z<br>Normalized Effective Transient<br>**----- End of picture text -----**<br>


4 Version: E1608 

**TSM2302CX** TAIWANSEMICONDUCTOR[jpn Taiwan Semiconductor 

## PACKAGE OUTLINE DIMENSIONS (Unit: Millimeters) 

**SOT-23** 

## SUGGESTED PAD LAYOUT (Unit: Millimeters) 

## MARKING DIAGRAM 

**2** = Device Code 

**Y** = Year Code 

**M** = Month Code 

**O** =Jan **P** =Feb **Q** =Mar **R** =Apr **S** =May **T** =Jun **U** =Jul **V** =Aug **W** =Sep **X** =Oct **Y** =Nov **Z** =Dec **L** = Lot Code 

5 Version: E1608 

**TSM2302CX** TAIWANSEMICONDUCTOR(i Taiwan Semiconductor 

## **Notice** 

Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. 

Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. 

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 

6 Version: E1608

Updated at April 29, 2026

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